Abstract: Various embodiments of the present application are directed towards a pad with high strength and bondability. In some embodiments, an integrated chip comprises a substrate, an interconnect structure, a pad, and a conductive structure. The interconnect structure adjoins the substrate and comprises wires and vias. The wires and the vias are stacked between the pad and the substrate. The conductive structure (e.g., a wire bond) extends through the substrate to the pad. By arranging the wires and the vias between the pad and the substrate, the pad may be inset into a passivation layer of the interconnect structure and the passivation layer may absorb stress on the pad. Further, the pad may contact the wires and the vias at a top wire level. A thickness of the top wire level may exceed a thickness of other wire levels, whereby the top wire level may be more tolerant to stress.

Abstract: A method for transferring a superficial layer from a detachable structure comprises the following steps: a) supplying the detachable structure comprising: •a support substrate, •a detachable layer arranged on the support substrate along a main plane and comprising a plurality of walls that are separated from one another, each wall having at least one side that is perpendicular to the main plane; •a superficial layer arranged on the detachable layer along the main plane; b) applying a mechanical force configured to cause said walls to bend, along a direction that is secant to said side, until causing the mechanical rupture of the walls, in order to detach the superficial layer from the support substrate.

Abstract: Patterned ceramic wavelength-converting phosphor structures may be bonded to an LED to form a pcLED. The phosphor structures are patterned with features that provide enhanced oxygen permeability to an adhesive bond used to attach the phosphor structure to the LED. The enhanced oxygen permeability reduces transient degradation of the pcLED occurring in the region of the adhesive bond.

Abstract: An optoelectronic component may have a semiconductor chip designed to emit electromagnetic radiation. The semiconductor chip may have a radiation exit surface, and a protective layer arranged over the radiation exit surface. The protective layer may include at least one first layer comprising an aluminum oxide and at least one second layer comprising a silicon oxide a silicon oxide, and at least one third layer comprising a titanium oxide. A current spreading layer may include one or more transparent conductive oxides arranged between the radiation exit surface and the protective layer.

Abstract: The present invention is concerned with an LED packaging unit, a manufacturing method for the same, and an LED lamp. The LED packaging unit has a common substrate, N number of red LED chips, M number of green LED chips and X number of blue LED chips. The N number of red LED chips, the M number of green LED chips and the X number of blue LED chips are arranged and packaged on a bottom surface of a recess of the common substrate. The red LED chips, the green LED chips and the blue LED chips are all monochromatic LED chips, with N, M, and X being integers greater than 1. The distances between any adjacent two red LED chips (or green LED chips or blue LED chips) are substantially consistent.

Abstract: An OLED display according to an exemplary embodiment includes: a substrate; a gate insulation layer that is disposed on the substrate; and a gate wire that is disposed on the gate insulation layer, and includes a gate electrode, wherein the gate wire includes a single layer of aluminum or an aluminum alloy, and an angle formed by side surfaces of the gate wire and the gate insulation layer is less than 65°.

Abstract: A semiconductor device and a method for forming the semiconductor device are provided. The method includes providing a layer to-be-etched including first regions and second regions. A second region includes a second trench region. The method also includes forming a first mask layer over the first and second regions, and forming first trenches discretely in the first mask layer in the first regions. Moreover, the method includes forming a divided doped layer, and implanting dopant ions into the first mask layer disposed outside the second trench region. In addition, the method includes forming a mask sidewall spacer on a sidewall of a first trench after forming the divided doped layer and implanting the dopant ions into the first mask layer disposed outside the second trench region. Further, the method includes forming a second trench in the first mask layer in the second region.

Abstract: A transistor array panel is manufactured by a method that reduces or obviates the need for highly selective etching agents or complex processes requiring multiple photomasks to create contact holes. The panel includes: a substrate; a buffer layer positioned on the substrate; a semiconductor layer positioned on the buffer layer; an intermediate insulating layer positioned on the semiconductor layer; and an upper conductive layer positioned on the intermediate insulating layer, wherein the semiconductor layer includes a first contact hole, the intermediate insulating layer includes a second contact hole positioned in an overlapping relationship with the first contact hole, and the upper conductive layer is in contact with a side surface of the semiconductor layer in the first contact hole.

Abstract: Some embodiments include an integrated assembly having bottom electrodes coupled with electrical nodes. Each of the bottom electrodes has a first leg electrically coupled with an associated one of the electrical nodes, and has a second leg joining to the first leg. First gaps are between some of the bottom electrodes, and second gaps are between others of the bottom electrodes. The first gaps alternate with the second gaps. Insulative material and conductive-plate-material are within the first gaps. Scaffold structures are within the second gaps and not within the first gaps. Capacitors include the bottom electrodes, regions of the insulative material and regions of the conductive-plate-material. The capacitors may be ferroelectric capacitors or non-ferroelectric capacitors. Some embodiments include methods of forming integrated assemblies.

Abstract: A monolithic electronic device includes a plurality of rigid portions arranged in a polyhedron shape and a plurality of in-plane and out-of-plane deformable portions connecting the plurality of rigid portions to each other. Each of the plurality of rigid portions has an outer side and an opposing inner side. The inner of each of the plurality of rigid portions face an inside of the polyhedron shape. At least some of the plurality of rigid portions include semiconductor devices on both the outer and inner sides. The plurality of rigid portions and the plurality of in-plane and out-of-plane deformable portions are monolithic.

Abstract: Several aspects of the present technology are directed toward fan-out packaged semiconductor devices having an integrated shield to protect against electromagnetic interference and methods of manufacturing such devices. The shield can be constructed by forming a conductive wall on a redistribution structure and disposing a conductive cap on an upper surface of an encapsulant. The conductive wall and the conductive cap are electrically connected to each other. By forming the conductive wall directly on the redistribution structure and separately disposing the conductive cap onto an upper surface of the encapsulant, an electromagnetic shield can be readily formed using wafer-level or panel-level processing techniques that are efficient and cost-effective. Several embodiments of semiconductor devices in accordance with the present technology accordingly shield the integrated circuitry of semiconductor dies from electromagnetic interference.

Abstract: A display device and method for manufacturing the same are provided. The display device includes a display screen and a camera disposed under the display screen. The display screen includes a flexible substrate layer, a thin film transistor substrate, a pixel defining layer, and a light emitting layer which are sequentially laminated. The camera includes a detector, an optical fiber detector, and an optical fiber for connecting the detector and the optical fiber detector. The manufacturing method of the display device includes the steps of: providing a display screen, providing a through hole, and providing a camera.

Abstract: An electrostatic protection device includes: a first conductive layer, a second conductive layer and a polarization film layer, in which the polarization film layer is disposed between the first conductive layer and the second conductive layer and formed of a piezoelectric material which is capable of deforming when applied with electricity; a conductive cantilever, disposed on the second conductive layer and including a free end; and a charge diffusion layer, disposed at a side of the conductive cantilever away from the polarization film layer, electrically connected with the first conductive layer and spaced apart from the conductive cantilever, in which upon a voltage difference between the first conductive layer and the second conductive layer reaching a predetermined value, the polarization film layer deforms to allow the conductive cantilever to connect with the charge diffusion layer.

Abstract: The present invention relates to a display panel and a display device. On the one hand, the display panel disposes a groove, which forms on one side of a packaging layer of a display area away from a substrate, and extends downward to one side of an antireflective film facing a thin film transistor layer; and a camera is disposed on one side of the substrate away from the thin film transistor layer and is corresponding the groove, thereby reducing process flow, improving productivity and yield, and realizing a full screen. On the other hand, the present invention also adds an antireflective film to improve the light transmittance at the groove and avoid the phenomenon that the camera is difficult to image.

Abstract: A chuck is provided. The chuck comprises a plurality of lands protruding from a surface of the chuck, the lands defining a series of zones; and a trenched recessed from the surface of the chuck in at least one of the zones.

Abstract: Systems and methods for hermetically sealed quantum dots that may be positioned directly on top of the LED, so that a separate film is not needed to incorporate the quantum dots into a light, display, or other LED-based device. An enclosed quantum dot package can be incorporated directly on top of an LED die and packaged in the same packaging as the LED itself. Alternatively, the LED die may be encapsulated in the LED package, and the enclosed quantum dot package may be placed on top of the encapsulated LED. Alternatively, the enclosed quantum dot package may be separate from the encapsulated LED, e.g., included in a device as a separate layer from the LED package(s).

Abstract: FinFET devices and processes to prevent fin or gate collapse (e.g., flopover) in finFET devices are provided. The method includes forming a first set of trenches in a semiconductor material and filling the first set of trenches with insulator material. The method further includes forming a second set of trenches in the semiconductor material, alternating with the first set of trenches that are filled. The second set of trenches form semiconductor structures which have a dimension of fin structures. The method further includes filling the second set of trenches with insulator material. The method further includes recessing the insulator material within the first set of trenches and the second set of trenches to form the fin structures.

Abstract: A display device includes an organic emission layer in which a first pixel area, a second pixel area and a third pixel area are defined, a color filter layer disposed on the organic emission layer and including first to third color filters overlapping the first to third pixel areas, respectively, where the first to third color filters emit first light to third light, respectively, a first optical filter layer disposed on the color filter layer and which transmits at least one of the first light and the second light and reflects or absorbs the third light, and a light-focusing layer disposed between the color filter layer and the organic emission layer and including first to third light-focusing parts overlapping the first to third pixel areas, respectively, where at least one of the first to third color filters includes quantum dots.

Abstract: An emitter mesa and a base electrode are arranged on a base mesa on a substrate. A base wiring line on the base electrode is connected to the base electrode via base openings. The emitter mesa includes a plurality of emitter fingers having a planar shape that is long in one direction. The emitter fingers include first and second emitter fingers. The base openings are arranged so as to be spaced apart in a longitudinal direction from first end portions of the first emitter fingers and are not arranged in a region obtained by extending the second emitter finger in the longitudinal direction. An end portion of the second emitter finger that is near the base openings protrudes in the longitudinal direction beyond the end portions of the first emitter fingers that are near the base openings.

Abstract: A semiconductor device includes a substrate, a first P-type well region and a second P-type well region disposed in the substrate, wherein the first P-type well region and the second P-type well region are spaced apart from each other, an N-type source region disposed in the substrate, wherein the N-type source region is disposed spaced apart from the second P-type well region, an N-type drain region disposed in the second P-type well region, an N-type LDD region disposed near the N-type drain region, and a gate insulating layer and a gate electrode on the substrate, wherein the gate electrode partially overlaps the second P-type well region.