Abstract: Various embodiments described herein provide for in-service scanning and correction of stored data for achieving functional safety. For some embodiments, a data scanning and correction system periodically reads data from different portions (e.g., addresses) of a storage device (e.g., memory) implemented with ECC to detect any errors in the data. If an error is detected, the data scanning and correction system generates corrected data and rewrites the corrected data to the portion of the storage device. The data scanning and correction system may continuously cycle this process through different portions of the storage device to detect and correct errors while the storage device is in-service.

Abstract: A health check manager may detect a trigger for a capacitor health check for a memory sub-system. The health check manager may determine a number of write commands in a set of one or more pending commands for a memory die of the memory sub-system and set a start time for the capacitor health check based on the number of write commands in the set of one or more pending commands. In some cases, the health check manager may perform the capacitor health check in accordance with the start time.

Abstract: Techniques discussed herein facilitate polar coding and decoding for NR (New Radio) systems between UE(s) (User Equipment(s)) and/or gNB(s) (next generation Node B(s)) based on code block segmentation. One example embodiment employable at a UE comprises processing circuitry configured to determine one or more thresholds for code block segmentation, where the one or more thresholds for code block segmentation includes one or more of a payload threshold (Kseg) or a code rate threshold (Rseg); determine to perform code block segmentation based on the one or more thresholds and at least one of a current payload (K) of an information block or a current code rate (R) for the information block; segment the information block into a plurality of segments; and encode each segment of the plurality of segments via a polar encoder with a code size (N).

Abstract: A storage device includes a memory array and a memory controller. The memory controller generates read and write commands for the memory array. An error correction code engine for the storage device is operable to use a plurality of different codeword sizes, different code rates, or different ECC algorithms. Logic is included that applies a selected codeword size, code rate or ECC algorithm in dependence on the operating conditions of the memory array.

Abstract: A processing device in a memory sub-system receives an indication that a write back operation was performed for a management unit in a memory device. Responsive to receiving the indication that the write back operation was performed, the processing device initiates a read verify operation for the management unit and receives an indication of a number of write back errors associated with the management unit during the read verify operation. The processing device further determines whether the number of write back errors satisfies a read verify threshold criterion, and responsive to the number of write back errors satisfying the read verify threshold criterion, remaps the management unit to a different location on the memory device.

Abstract: Methods, systems, and devices for techniques for managing temporarily retired blocks of a memory system are described. In some examples, aspects of a memory system or memory device may be configured to determine an error for a block of memory cells. For example, a controller may determine an existence of the error and may temporarily retire the block. A media management operation may be performed on the temporarily retired block and, depending on one or more characteristics of the error, the temporarily retired block may be enabled or retired.

Abstract: A multi-port, multi-mode Reed Solomon (RS) forward error correction system includes a plurality of data in lines, each associated with a data port. The system includes a syndrome block (SDM) that has a plurality of syndrome slices and a SDM switching logic. An input of a SDM slice couples with a data in line from the plurality of data in lines. The switching logic couples with an interface port width (IFW) line a mode line. The IFW line identifies a number of data in lines tied together and the mode line to identify a RS mode. A reformulated inversionless Berlekamp-Massey (RiBM) block has a plurality of RiBM slices and a RiBM switching logic. A Chien Forney (ChFr) block has a plurality of ChFr slices. An error evaluation magnitude (ErEval) block has a plurality of ErEval slices. A plurality of adders couple with an output of a corresponding ErEval slice.

Abstract: Systems, methods, and circuitries are provided for checking integrity of code received from an external memory. In one example, a system includes a non-volatile memory and a controller. The non-volatile memory includes a first partition configured to store first data corresponding to program code and a second partition configured to store second data corresponding to a copy of the first data. The controller that includes a processor and comparator circuitry. The comparator circuitry is configured to receive a portion of the first data and a corresponding portion of the second data, compare the portion of the first data to the portion of the second data, when the portion of the first data matches the portion of the second data, provide the portion of the first data to the processor, and when the portion of the first data does not match the portion of the second data, generate an alarm signal.

Abstract: The methods and systems improve uncorrectable error (UE) and silent data corruption (SDC) rates for memory chips and improve error correction of the memory chips. The systems may include a memory bank with a plurality of memory chips in communication with a memory controller. The memory bank may use one additional memory chip that stores a bitwise parity of the data stored in the remaining memory chips of the memory bank. The parity bits are used to rebuild corrupted data when a UE occurs. The parity bits are also used to detect whether a SDC occurred in the data.

Abstract: A request to program host data to a memory device of a memory sub-system is received. Redundancy metadata associated with the host data is generated. A determination is made, in view of the received request, whether the host data is valid data or invalid data. In response to a determination that the host data is invalid data, updated redundancy metadata associated with the host data is generated. The updated redundancy metadata indicates that the host data is invalid data. The host data and the updated redundancy metadata is programmed to the memory device.

Abstract: This application discloses a computing system implementing an automatic test pattern generation tool to convert a transistor-level model of a library cell describing a digital circuit into a switch-level model of the library cell, generate test patterns configured to enable detection of target defects injected into the switch-level model of the library cell, and bifurcate the test patterns into a first subset of the test patterns and a second set of the test patterns based on detection types for the target defects enabled by the test patterns. The computing system can implement a cell model generation tool to perform an analog simulation of the transistor-level model of the library cell using the second subset of the test patterns to verify that they enable detection of target defects, while skipping performance of the analog simulation of the transistor-level model of the library cell using the first subset of the test patterns.

Abstract: Host data is written to a set of pages of a page stripe of a storage area of a memory sub-system. A set of exclusive or (XOR) parity values corresponding to the host data written to a portion of the set of pages of the storage area is generated. An additional XOR parity value is generated by executing an XOR operation using the set of XOR parity values. Parity data including the set of XOR parity values and the additional XOR parity value is stored in a cache memory of the memory sub-system. The parity data is written to an available page stripe of the storage area.

Abstract: Apparatus and methods are disclosed, including a memory device with circuitry to generate an amount of parity data, and to store at least a portion of the parity data within a dummy data location. Selected examples include storing meta data with the parity data to further facilitate data recovery. Selected examples include a memory device with circuitry to generate one or more parity data index entries that map protected data to parity data.

Abstract: Disclosed is a system, and a method of using the system, that includes a memory component and a processing device. The processing device provides, to a host system, a failure notification that includes an indication of memory cell(s) of the memory device storing a data that was corrupted during a memory operation. The processing device then receives a replacement data from the host system. The replacement data is provided in response to the host system identifying a range of logical addresses corresponding to the corrupted data, based on geometric parameters of the memory device and the failure notification.

Abstract: An apparatus includes a media management superblock component. The media management superblock component determines that a quantity of blocks of a superblock of a non-volatile memory array are bad blocks. The media management superblock component compares the quantity of bad blocks to a bad block criteria. The media management superblock component writes host data to the superblock with the quantity of bad blocks in response to the quantity of bad blocks meeting the bad block criteria.

Abstract: In one embodiment, a field programmable gate array (FPGA) includes: at least one programmable logic circuit to execute a function programmed with a bitstream; a self-test circuit to execute a self-test at a first voltage, the self-test and the first voltage programmed with first metadata associated with the bitstream, the self-test including at least one critical path length of the function; and a power controller to identify an operating voltage for the at least one programmable logic circuit based at least in part on the execution of the self-test at the first voltage.

Abstract: A memory performs a sequence of ECS operations to read a codeword, detect and correct any errors, and write the corrected codeword back to the memory array. An ECS circuit counts errors which are detected, and sets a value of one or more ECS registers in a mode register if the count exceeds a threshold filter at the end of the ECS cycle. The memory also includes a forced ECS readout circuit, which responsive to a command, for example from a controller, sets the value(s) in the ECS register(s).

Abstract: A verifying method for an error checking and correcting (ECC) circuit of a static random-access memory (SRAM) is provided. The SRAM comprises a storage unit, an ECC circuit and a checking circuit. The ECC circuit receives an original data and an output first data. The checking circuit obtains a second data according to an error-injecting mask. The checking circuit performs a bit operation on the first data and the second data to obtain a third data. The checking circuit writes the third data into a test target area of the storage unit and the written data as a fourth data. The checking circuit reads the fourth data from the test target area. The ECC circuit obtains a fifth data and an error message according to the fourth data. The checking circuit obtains the bit error detection result according to the error message and the second data.

Abstract: Hierarchical coding architectures and schemes based on multistage concatenated codes are described. For instance, multiple encoder and decoder hierarchies may be implemented along with use of corresponding stages of concatenated codes. The coding scheme generally includes an inner coding scheme (e.g., a polar coding scheme, such as a hybrid polar code or Bose Chaudhuri and Hocquenghem (BCH) code), an outer coding scheme (e.g., a Reed-Solomon (RS) coding scheme), and one or more middle coding schemes. The inner coding scheme is based on a polarization transformation (e.g., polar codes with cyclic redundancy check (CRC) codes, polar codes with dynamic freezing codes, polarization-adjusted convolutional (PAC) codes, etc.) which allows for embedding parity data from an outer code inside a codeword along with the user data. The outer coding scheme has a similar concatenated structure (e.g., of an inner RS code with an outer RS code).

Abstract: A semiconductor system includes a process control circuit configured to determine whether to perform a patrol training operation, generate a voltage code signal for adjusting a level of a reference voltage which determines a logic level of data in a target memory circuit, and adjust the voltage code signal on the basis of a fail information signal corresponding to the target memory circuit, an operation control circuit configured to receive a command and an address from a host, generate, from the command, a write signal and a read signal for performing a normal operation, and generate, from the address, an internal address for performing the normal operation and an error detection circuit configured to detect an error in the data by receiving the data from the target memory circuit, and generate the fail information signal depending on whether the error has occurred in the data.