Abstract: Display screens and display devices are disclosed. The display screen includes: a first display region, a second display region adjacent to the first display region, and a third display region adjacent to the second display region. A sub-pixel density of the first display region is smaller than a sub-pixel density of the second display region. The sub-pixel density of the second display region is smaller than a sub-pixel density of the third display region. The display screens and the display devices according to the present application can improve the user experience.

Abstract: An alignment mechanism comprises a rotary unit 61 with a first rotary axis 61c, three power transmission mechanisms 62, and three alignment action units 63. Each power transmission mechanism 62 comprises a first arm 621 and a second arm 622. The first arm 621 includes a first end 621a pivotably supported at a corresponding one of three different positions P11 to P13, and a second end 621b on the opposite side of the first end 621a. The second arm 622 includes a second rotary axis 622c and is pivotably supported on the second end 621b of the first arm 621 at a position different from the second rotary axis 622c. The alignment action units 63 are connected to corresponding second arms. The second rotary axes 622c are at three positions P21 to P23 separated from the rotary unit 61 toward three different directions centered on the first rotary axis 61c.

Abstract: An organic light emitting diode (OLED) display panel is provided, which includes a thin film transistor (TFT) array, a second metal layer, and an insulating layer disposed on the TFT array, a light blocking layer disposed on the insulating layer, a planarization layer disposed on the light blocking layer, an anode metal layer disposed on the planarization layer, and the light blocking layer provided with a plurality of holes; wherein the second metal layer includes a source-drain metal layer, and an interconnect hole is disposed in an interlayer structure between the source-drain metal layer and the anode metal layer and is electrically connected to the source-drain metal layer and the anode metal layer.

Abstract: A method of using an oven includes supporting a substrate on a rotatable spindle in a processing chamber of the oven and rotating the substrate. The method may also include raising the spindle with the substrate to a heating zone and activating a lamp assembly to heat a top surface of the substrate. The substrate may then be lowered to a dosing zone and a chemical vapor directed into the processing chamber above the substrate. The substrate may then be further heated using the lamp assembly and cooled.

Abstract: An image sensor includes pixel regions separated by an isolation region and receiving incident light, color filters respectively disposed on a surface of the semiconductor substrate corresponding to the pixel regions, a cover insulating layer disposed on the surface of the semiconductor substrate and covering the color filters, first transparent electrodes disposed on the cover insulating layer and spaced apart to respectively overlap the color filters, an isolation pattern disposed on the cover insulating layer between the first transparent electrodes and having a trench spaced apart from the first transparent electrodes, a drain electrode disposed in the trench of the isolation pattern, and an organic photoelectric layer and a second transparent electrode sequentially disposed on the first transparent electrodes and the isolation pattern.

Abstract: An electronic device and a method of manufacturing an electronic device. As non-limiting examples, various aspects of this disclosure provide various methods of manufacturing electronic devices, and electronic devices manufactured thereby, that comprise utilizing metal studs to further set a semiconductor die into the encapsulant.

Abstract: Methods of forming and structures of packages are discussed herein. In an embodiment, a method includes forming a back side redistribution structure, and after forming the back side redistribution structure, adhering a first integrated circuit die to the back side redistribution structure. The method further includes encapsulating the first integrated circuit die on the back side redistribution structure with an encapsulant, forming a front side redistribution structure on the encapsulant, and electrically coupling a second integrated circuit die to the first integrated circuit die. The second integrated circuit die is electrically coupled to the first integrated circuit die through first external electrical connectors mechanically attached to the front side redistribution structure.

Abstract: Some embodiment structures and methods are described. A structure includes an integrated circuit die at least laterally encapsulated by an encapsulant, and a redistribution structure on the integrated circuit die and encapsulant. The redistribution structure is electrically coupled to the integrated circuit die. The redistribution structure includes a first dielectric layer on at least the encapsulant, a metallization pattern on the first dielectric layer, a metal oxide layered structure on the metallization pattern, and a second dielectric layer on the first dielectric layer and the metallization pattern. The metal oxide layered structure includes a metal oxide layer having a ratio of metal atoms to oxygen atoms that is substantially 1:1, and a thickness of the metal oxide layered structure is at least 50 ?. The second dielectric layer is a photo-sensitive material. The metal oxide layered structure is disposed between the metallization pattern and the second dielectric layer.

Abstract: The present invention relates to a chip-on film type semiconductor package including an integrated circuit chip, a printed circuit board layer, an outer lead bonder pad, and a graphite layer, in which the integrated circuit chip is connected to one surface of the printed circuit board layer directly or by means of a mounting element, the outer lead bonder pad is located on one surface of the printed circuit board layer, and the graphite layer is laminated on an opposite surface of the printed circuit board layer and a display device including the same.

Abstract: Some embodiments are directed towards an image sensor device. A photodetector is disposed in a semiconductor substrate, and a transfer transistor is disposed over photodetector. The transfer transistor includes a transfer gate having a lateral portion extending over a frontside of the semiconductor substrate and a vertical portion extending to a first depth below the frontside of the semiconductor substrate. A gate dielectric separates the lateral portion and the vertical portion from the semiconductor substrate. A backside trench isolation structure extends from a backside of the semiconductor substrate to a second depth below the frontside of the semiconductor substrate. The backside trench isolation structure laterally surrounds the photodetector, and the second depth is less than the first depth such that a lowermost portion of the vertical portion of the transfer transistor has a vertical overlap with an uppermost portion of the backside trench isolation structure.

Abstract: A method of manufacturing component carriers includes carrying out a test for each of multiple sections of a component-carrier structure, inserting at least one functional component in each of further sections of a further component-carrier structure to be connected with the component-carrier structure so that each further section assigned to a respective section having successfully passed the test is provided with at least one functional component, and inserting at least one functionally inactive dummy component in each of the further sections assigned to a respective section having failed the test.

Abstract: A film-shaped firing material 1 is provided, including sinterable metal particles 10 and a binder component 20, in which a content of the sinterable metal particles 10 is in a range of 15% to 98% by mass, a content of the binder component 20 is in a range of 2% to 50% by mass, a shrinkage factor in a planar direction of the film-shaped firing material after being pressurized and fired under conditions of a temperature of 350° C. and a pressure of 10 MPa for 3 minutes is 10% or less with respect to the shrinkage factor before the firing, and a volume shrinkage factor thereof is in a range of 15% to 90% with respect to the volume shrinkage factor before the firing, and a contact ratio of the film-shaped firing material with an adherend after being pressurized and fired under conditions of a temperature of 350° C. and a pressure of 10 MPa for 3 minutes in a state in which the film-shaped firing material is in contact with the adherend is 90% or greater with respect to a contact area of the adherend.

Abstract: A semiconductor package structure includes a conductive structure, at least one semiconductor element, an encapsulant, a redistribution structure and a plurality of bonding wires. The semiconductor element is disposed on and electrically connected to the conductive structure. The encapsulant is disposed on the conductive structure to cover the semiconductor element. The redistribution structure is disposed on the encapsulant, and includes a redistribution layer. The bonding wires electrically connect the redistribution structure and the conductive structure.

Abstract: A photoelectric conversion apparatus, including: a semiconductor substrate having a first surface on which light is incident and a second surface; a photoelectric converting unit configured to convert incident light into charge; a charge holding unit configured to hold charge; a light shielding unit provided in a trench of the semiconductor substrate, the trench being formed between the photoelectric converting unit and the charge holding unit; and a transfer gate formed on a second surface side of the semiconductor substrate so as to overlap with the light shielding unit when viewed in a plan view for the second surface of the semiconductor substrate and configured to transfer the charge at the photoelectric converting unit to the charge holding unit, wherein a distance between the light shielding unit and the photoelectric converting unit is shorter than a distance between the light shielding unit and the charge holding unit.

Abstract: An image sensor includes a substrate, first and second insulating structures, a first wiring structure, a through via, and first and second connection patterns. The substrate includes a sensor array region and a pad region. The first insulating structure is disposed on a second surface of the substrate. The first wiring structure is formed in the first insulating structure and includes first conductive layers and first vias. The through via passes through the substrate in the pad region and connects to the first wiring structure. The first connection pattern is connected to the first wiring structure. The second insulating structure is disposed on a fourth surface of the first insulating structure. The second connection pattern is connected to the first connection pattern. The first conductive layers include a first wiring, and a second wiring spaced farther from the substrate than the first wiring. The through via contacts the second wiring.

Abstract: The present invention provides a semiconductor module capable of improving a bandwidth between a logic chip and a RAM. According to the present invention, a semiconductor module 1 is provided with: a logic chip; a pair of RAM units 30 each composed of a lamination-type RAM module; a first interposer 10 electrically connected to the logic chip and to each of the pair of RAM units 30; and a connection unit 40 that communicatively connects the logic chip and each of the pair of RAM units 30, wherein one RAM unit 30a is placed on the first interposer 10, and has one end portion disposed so as to overlap, in the lamination direction C, one end portion of the logic chip with the connection unit 40 therebetween, and the other RAM unit 30b is disposed so as to overlap the one RAM unit 30a with the connection unit 40 therebetween, and is also disposed along the outer periphery of the logic chip.

Abstract: This patent application relates to methods and apparatus for temperature modification within a stack of microelectronic devices for mutual collective bonding of the microelectronic devices, and to related substrates and assemblies.

Abstract: A method includes forming a first photoresist layer on a front side of a device substrate and having first trenches spaced apart from each other. A first implantation process is performed using the first photoresist layer as a mask to form first isolation regions in the device substrate. A second photoresist layer is formed on the front side and has second trenches. A second implantation process is performed using the second photoresist layer as a mask to form second isolation regions in the device substrate and crossing over the first isolation regions. A third photoresist layer is formed on the front side and has third trenches spaced apart from each other. A third implantation process is performed using the third photoresist layer as a mask to form third isolation regions in the device substrate and crossing over the first isolation regions but spaced apart from the second isolation regions.

Abstract: The present invention discloses an image sensor including a quantum dot layer. The image sensor including a quantum dot layer according to the present invention includes photoelectric conversion elements formed on a substrate to correspond to a plurality of pixel regions; a wiring layer formed on the substrate on which the photoelectric conversion elements are formed; color filters formed on the wiring layer to correspond to the photoelectric conversion elements; and a quantum dot layer formed on the color filters and absorbing light and emitting visible light having a specific range of wavelengths converted from the absorbed light.

Abstract: An image sensing device includes a sensing module, a moving module, and an invisible light transmitter. The sensing module includes several pixel sets. Each of the pixel sets includes several sub-pixels and one or more invisible light sensor. The sub-pixels and the invisible light sensor are arranged into an array. The moving module is connected to the sensing module. The moving module is used to move the sensing module. The invisible light transmitter is disposed corresponding to the sensing module. The invisible light sensor is used to sense an invisible light transmitted from the invisible light transmitter.