Abstract: A method to integrate a vertical IMPATT diode in a planar process.

Abstract: An integrated circuit is provided including a semiconductor bulk substrate, a buried oxide layer formed on the semiconductor bulk substrate, a plurality of cells, each cell having a transistor device, formed over the buried oxide layer, a plurality of gate electrode lines running through the cells and providing gate electrodes for the transistor devices of the cells, and a plurality of tap cells configured for electrically contacting the semiconductor bulk substrate and arranged at positions different from positions below or above the plurality of cells having the transistor devices.

Abstract: A voltage multiplier circuit operates in response to a received clock signal to perform a voltage multiplication operation on an input voltage to generate an output voltage. The voltage multiplier circuit includes a pair of intermediate nodes that are capacitively coupled to receive, respectively, opposite phases of a clock signal. A first CMOS driver circuit is coupled to one of the intermediate nodes and has an output configured to generate one phase of a level shifted output clock signal. A second CMOS driver circuit is coupled to another one of the intermediate nodes and has an output configured to generate another phase of the level shifted output clock signal.

Abstract: A transistor includes a III-N layer structure including a III-N channel layer between a III-N barrier layer and a III-N depleting layer, where the III-N channel layer includes a 2DEG channel formed adjacent an interface between the III-N channel layer and the III-N barrier layer; a source and a drain, each of which being directly connected to the III-N channel layer; a gate between the source and the drain, the gate being over the III-N layer structure, where the III-N depleting layer includes a first portion that is disposed in a device access region between the gate and the drain; and where the source electrically contacts the first portion of the III-N depleting layer, and the drain is electrically isolated from the first portion of the III-N depleting layer.

Abstract: A method of manufacturing electronic chips containing low-dispersion components, including the steps of: mapping the average dispersion of said components according to their position in test semiconductor wafers; associating, with each component of each chip, auxiliary correction elements; activating by masking the connection of the correction elements to each component according to the initial mapping.

Abstract: An interconnect element 130 can include a dielectric layer 116 having a top face 116b and a bottom face 116a remote from the top face, a first metal layer defining a plane extending along the bottom face and a second metal layer extending along the top face. One of the first or second metal layers, or both, can include a plurality of conductive traces 132, 134. A plurality of conductive protrusions 112 can extend upwardly from the plane defined by the first metal layer 102 through the dielectric layer 116. The conductive protrusions 112 can have top surfaces 126 at a first height 115 above the first metal layer 132 which may be more than 50% of a height of the dielectric layer. A plurality of conductive vias 128 can extend from the top surfaces 126 of the protrusions 112 to connect the protrusions 112 with the second metal layer.

Abstract: A low-power-consuming semiconductor device that can store analog data stably and very accurately is provided at low cost. The semiconductor device includes a power supply portion, a sensor portion, and a memory element portion. The sensor portion acquires analog data. The memory element portion stores the analog data. A channel formation region of a transistor included in the memory element portion is formed in an oxide semiconductor film. The semiconductor device does not include an analog/digital converter circuit and has functions of measuring and storing analog data.

Abstract: A composition for forming silica layer includes a silicon-containing polymer and a solvent, wherein a weight average molecular weight of the silicon-containing polymer ranges from about 2,000 to about 100,000 and a branching ratio (a) of the silicon-containing polymer calculated by Equation 1 ranges from about 0.25 to about 0.50. ?=k·Ma??[Equation 1] In Equation 1, ? is an intrinsic viscosity of a silicon-containing polymer, M is an absolute molecular weight of a silicon-containing polymer, a is a branching ratio, and k is an intrinsic constant.

Abstract: The invention relates to methods for fabricating a semiconductor substrate. In one embodiment, the method includes providing a support that includes a barrier layer thereon for preventing loss by diffusion of elements derived from dissociation of the support at epitaxial growth temperatures; providing a seed layer on the barrier layer, wherein the seed layer facilitates epitaxial growth of a single crystal III-nitride semiconductor layer thereon; epitaxially growing a nitride working layer on the thin seed layer; and removing the support to form the semiconductor substrate.

Abstract: An integrated circuit includes at least one cell. The at least one cell includes a cell region defined by a cell boundary; a power line structure extending in a first direction parallel to and along the cell boundary and including a first power line extending in the first direction along the cell boundary, a plurality of metal islands spaced apart from one another over the first power line in the first direction, and a second power line extending in the first direction over the plurality of metal islands; and a signal line structure disposed in the cell region at the same level as the first power line and the plurality of metal islands. Separation distances between each of the plurality of metal islands and a part of the signal line structure at the same level as the plurality of metal islands are equal to or greater than a critical separation distance.

Abstract: A “universal” substrate for a semiconductor device is formed of a non-conductive substrate material. A uniform array of conductive pillars is formed in the substrate material. The pillars extend from a top surface of the substrate material to a bottom surface of the substrate material. A die flag may be formed on the top surface of the substrate material. Pillars underneath the die flag are connected to pillars beyond a perimeter of the die flag with wires. Power and ground rings may be formed by connecting rows of pillars that surround the die flag.

Abstract: A resistive memory device includes a bottom electrode and a top electrode sandwiching a switching layer. The device also includes a field enhancement (FE) feature that extends from the bottom electrode either into the switching layer or is covered by switching layer and that is to enhance an electric field generated by the two electrodes to thereby confine a switching area of the device at the FE feature. The device further includes a planar interlayer dielectric surrounding the device, for supporting the top electrode. A method of making a resistive memory device, employing in-situ vacuum deposition of all layers, is also provided.

Abstract: A method of manufacturing a lead wire for a solar cell includes heating a wire material by a direct resistance heating or by an induction heating to reduce a 0.2% proof stress of the wire material while conveying the wire material and plating the wire material that is in a heated condition obtained by the direct resistance heating or by the induction heating while further conveying the wire material. An apparatus is configured to implement the method, and includes a plating bath, a conveyor mechanism configured to convey the wire material, a heater configured to heat the wire material, and a controller configured to control the conveyor mechanism and the heater.

Abstract: A method, which forms an air-bubble-free thin film with a high-viscosity fluid resin, initially dispenses the fluid resin on an outer region of a semiconductor wafer while the semiconductor wafer is spinning, and then dispenses the fluid resin onto the center of the semiconductor wafer after the semiconductor wafer has stopped spinning.

Abstract: A semiconductor manufacturing method includes setting a relative position between first through holes of a first plate-shaped part and second through holes of a second plate-shaped part to a first relative position. The method includes supplying a first gas containing a component of the first film onto the semiconductor substrate in a reactor through the first through holes not closed with the second plate-shaped part, to form the first film on the semiconductor substrate. The method includes relatively moving the first plate-shaped part and the second plate-shaped part to change the relative position to a second relative position. The method includes supplying a second gas containing a component of the second film onto the semiconductor substrate through the first through holes not closed with the second plate-shaped part, to laminate the second film on the first film.

Abstract: Methods, systems, and devices for a three-dimensional memory array are described. Memory cells may transform when exposed to elevated temperatures, including elevated temperatures associated with a read or write operation of a neighboring cell, corrupting the data stored in them. To prevent this thermal disturb effect, memory cells may be separated from one another by thermally insulating regions that include one or several interfaces. The interfaces may be formed by layering different materials upon one another or adjusting the deposition parameters of a material during formation. The layers may be created with planar thin-film deposition techniques, for example.

Abstract: Apparatus, systems, and processes for substrate breakage detection in a thermal processing system are provided. In one example implementation, a process can include: accessing data indicative of a plurality of temperature measurements for a substrate, the plurality of measurements obtained during a cool down period of a thermal process; estimating one or more metrics associated with a cooling model based at least in part on the data indicative of the plurality of temperature measurements; and determining a breakage detection signal based at least in part on the one or more metrics associated with the cooling model. The breakage detection signal is indicative of whether the substrate has broken during thermal processing.

Abstract: The present invention provides a light emitting device which emit light having a high-order level without increasing a current injection density to an active layer. A light emitting device according to the present invention includes an upper electrode layer, a lower electrode layer, and an active layer provided between them. In this case, light is emitted by injection of electric current to the active layer through the upper electrode layer and the lower electrode layer, the active layer has a plurality of quantum-confined structures, and a first quantum-confined structure has a ground level having an energy level E0 and a high-order level having an energy level E1, and a second quantum-confined structure has an energy level E2 which is higher than the E0, and the E1 and the E2 are substantially matched.

Abstract: A method of fabricating a semiconductor device. A wafer having a front side and a back side opposite to the front side is prepared. A plurality of through substrate vias (TSVs) is formed on the front side. A redistribution layer (RDL) is then formed on the TSVs. The wafer is bonded to a carrier. A wafer back side grinding process is performed to thin the wafer on the back side. An anneal process is performed to recrystallize the TSVs. A chemical-mechanical polishing (CMP) process is performed to polish the back side.

Abstract: Backplane-side bonding structures including a common metal are formed on a backplane. Multiple source coupons are provided such that each source coupon includes a transfer substrate and an array of devices to be transferred. Each array of devices are arranged such that each array includes a unit cell structure including multiple devices of the same type and different types of bonding structures including different metals that provide different eutectic temperatures with the common metal. Different types of devices can be sequentially transferred to the backplane by sequentially applying the supply coupons and selecting devices providing progressively higher eutectic temperatures between respective bonding pads and the backplane-side bonding structures. Previously transferred devices stay on the backplane during subsequent transfer processes, enabling formation of arrays of different devices on the backplane.