Abstract: In this statement, realization of “Non-volatile molecular multiple quantum bit (NVQB)” is described. NVQB is the long-term macroscopic time scale analog of MMQB. To realize NVQB, while inverted population of the gas is kept, entanglement generation and coherent state keeping must be carried out for a long-term quantum computation. Operating principle of molecular quantum computer is entanglement generation among huge-number of molecular ro-vibronic eigenstates by emission and absorption of photons due to the Fermi golden rule. Each single photon generated in induced absorption and induced emission sews many quantum states of many molecules by the Fermi golden rule. This results entanglement. When NVQB is realized, NVQB is not only used as “quantum storage device” up to 2Na, but also NVQB itself makes practical reasonable commercial molecular quantum computer be realized at once. NVQB is an alias of long-term successfully operating molecular quantum computer.

Abstract: Conductive channel technology is disclosed. In one example, a memory component can include a source line, a conductive channel having first and second conductive layers electrically coupled to the source line and memory cells adjacent to the conductive channel. In one aspect, channel conductivity and reliability is improved over a single layer conductive channel formation scheme by preventing unwanted oxide formation, increasing the interface contact area, and by modulating material grain size and boundaries via multiple thin channel integration scheme. Associated systems and methods are also disclosed.

Abstract: Embodiments of the present invention provide a method and system for dynamically controlling an appliance based on information received from a wearable device, to regulate the user's health. A wearable device is identified and configured to monitor at least one physiological aspect of the user. A controllable appliance with at least one sensor and at least one controllable setting is also identified. Health information of the user is received and utilized in generating, a user profile which comprises parameters related to the health of the user. Data from the wearable device and data from the controllable appliance is analyzed and it is determined whether the data matches the parameters related to the health of the user. If the data does not match the parameters related to the health of the user, then at least one controllable setting of the at least one controllable appliance is adjusted.

Abstract: Examples of the present disclosure provide apparatuses and methods related to performing a loop structure for operations performed in memory. An example apparatus might include an array of memory cells. An example apparatus might also include a plurality of sensing components coupled to the array and comprising a first group of sensing components coupled to a controller via a first number of control lines and a second group of sensing components coupled to the controller via a second number of control lines wherein the controller is configured to activate at least one of the first number of control lines and the second number of control lines.

Abstract: In general, embodiments of the technology relate to improving read performance of solid-state storage by using decoding parameters deemed particularly suitable for the read operation that is currently being performed. More specifically, embodiments of the technology relate to using different decoding parameters when a read operation needs to be repeated because the initial read operation has failed.

Abstract: The present invention relates to an improved sensing amplifier and related method for use in read operations in flash memory devices. In one embodiment, a voltage offset is induced in the sensing amplifier through the use of capacitors.

Abstract: A system includes energy modules configured to output power to electrical loads based on load demands. The system also includes control circuitry configured to control an amount of power transferred from each of the energy modules to the at least one load based on received sensor data from the energy modules, detect failure of at least one source cell of the energy modules based on the received sensor data from the energy modules, and control a voltage supplied by the energy modules to the at least one load within a predetermined operating band when the failure is detected.

Abstract: A storage system is provided comprising a controller and a memory. The controller is configured to identify at least two physical blocks of memory that are designated as bad blocks because of at least one defective wordline; identify which wordlines in the at least two physical blocks of memory are defective; and create a logical block of memory from non-defective wordlines in the at least two physical blocks of memory, wherein some portions of the logical block are mapped to one of the at least two physical blocks of memory, and wherein other portions of the logical block are mapped to another one of the at least two physical blocks of memory.

Abstract: Read stability of a memory is enhanced in low voltage operation mode by selectively boosting a cell supply voltage for a row of memory cells. The boosted voltage results from a capacitive coupling to the word line in that row. The capacitive coupling is implemented by running the metal line of the power supply line for the cell supply voltage and the metal line for the word line adjacent to each other in a common metallization level. The selective voltage boost is controlled in response to operation of a modified memory cell exhibiting a deteriorated write margin. An output of the modified memory cell is compared to a threshold to generate a signal for controlling the selective voltage boost. Word line under-voltage circuitry is further provided to control application of an under-voltage to the word line.

Abstract: Self-repair logic for stacked memory architecture. An embodiment of a memory device includes a memory stack having one or more memory die elements, including a first memory die element, and a system element coupled with the memory stack. The first memory die element includes multiple through silicon vias (TSVs), the TSVs including data TSVs and one or more spare TSVs, and self-repair logic to repair operation of a defective TSV of the plurality of data TSVs, the repair of operation of the defective TSV including utilization of the one or more spare TSVs.

Abstract: A device (1) for controlling the operation of a power load comprised in an apparatus (12) belonging to a terminal electrical installation (2) of an electrical network (16) on the basis of events that are related to the operation or management of the electrical distribution network. A method and the use of same for managing the power required in an electrical network via a plurality of devices, and a system including a plurality of devices for controlling the operation of a power load and an electrical distribution network are also described.

Abstract: Provided is a reception circuit provided in a chip, the reception circuit including a controller that generates a reception control signal which is activated for a preset time on a basis of a first control signal individually provided to a plurality of chips, a buffer that receives a second control signal commonly provided to the plurality of chips, and a delay circuit that receives the second control signal from the buffer in response to the reception control signal and provides the second control signal to other elements in the chip.

Abstract: Provided is a semiconductor device and an operating method thereof. The operating method of the semiconductor device includes performing a soft program operation on a top dummy cell and a bottom dummy cell, among dummy cells stacked in a vertical direction, by applying a first soft program voltage to a bottom dummy word line coupled to the bottom dummy cell and a second soft program voltage greater than the first soft program voltage to a top dummy word line coupled to the top dummy cell formed above the bottom dummy cell.

Abstract: A memory device includes first and second memory strings, first and second word lines and a controller. The first memory string includes first and second memory cells, a first select transistor, a second select transistor, and a third select transistor between the first and second memory cells. The second memory string includes third and fourth memory cells, a fourth select transistor above the third memory cell, a fifth select transistor below the fourth memory cell, and a sixth select transistor between the third and fourth memory cells. The first word line is electrically connected to gates of the first and third memory cells. The second word line is electrically connected to gates of the second and fourth memory cells. The controller is configured to execute a read operation on one of the memory cells, the read operation including a first phase and a second phase after the first phase.

Abstract: A phase change memory device includes two portions with local bitlines connected to memory cells. A reading stage is configured to read logic data stored by the first and second memory cells. A first main bitline extends between the reading stage and the first local bitlines and a first main switch is coupled between the first main bitline and reading stage and likewise for the second portion. Local switches are associated with respective ones of the local bitlines. A first reference signal generator is coupled to the reading stage. The phase change memory device is configured to operate in a first reading mode, in which the logic data stored by the first memory cell is read by the reading stage by comparison with the reference signal.

Abstract: An integrated circuit structure includes an SRAM array including a first sub-array having a first plurality of rows and a plurality of columns of SRAM cells, and a second sub-array having a second plurality of rows and the plurality of columns of SRAM cells. A first bit-line and a first complementary bit-line are connected to the first and the second pass-gate MOS devices of SRAM cells in a column in the first sub-array. A second bit-line and a second complementary bit-line are connected to the first and the second pass-gate MOS devices of SRAM cells in the column in the second sub-array. The first bit-line and the first complementary bit-line are disconnected from the second bit-line and the second complementary bit-line. A sense amplifier circuit is electrically coupled to, and configured to sense, the first bit-line, the first complementary bit-line, the second bit-line, and the second complementary bit-line.

Abstract: A semiconductor memory device includes first, second, and third memory cells, and first, second, and third word lines that are respectively connected to gates of the first, second, and third memory cells. A control circuit executes first, second, and third read operations in response to first, second, and third command sets, respectively. The first read operation includes a first read sequence, in which the control circuit reads data by applying first to third voltages to the first word line. In the second read operation, the control circuit reads data by applying a second read voltage that is set based on a result of the first read sequence, to the second word line. In the third read operation, the control circuit reads data from the third memory cells by applying a second read voltage that is set independently of the result of the first read sequence, to the third word line.

Abstract: Various embodiments comprise apparatuses and methods of forming the apparatuses. In one embodiment, an exemplary apparatus includes a plurality of memory cells. At least a portion of the memory cells have a bottom electrode with each bottom electrode being at least partially electrically isolated from remaining ones of the bottom electrodes. At least one resistive interconnect electrically couples two or more of the bottom electrodes. The resistive interconnect is arranged to discharge at least a portion of excess charge from the two or more bottom electrodes. Additional apparatuses and methods of forming the apparatuses are disclosed.

Abstract: A compact CMOS anti-fuse memory cell. In one aspect, an apparatus includes an N-well and an anti-fuse cell formed on the N-well. The anti-fuse cell includes a lightly doped drain (LDD) region deposited in the N-well, an oxide layer deposited on the N-well and having an overlapping region that overlaps the LDD region, and a control gate deposited on the oxide layer, wherein a bit of the anti-fuse cell is programmed when a voltage difference between the control gate and the LDD region exceeds a voltage threshold of the oxide layer and forms a leakage path from the control gate to the LDD region, and wherein the leakage path is confined to occur in the overlapping region.

Abstract: Methods and apparatus for creating a physically unclonable function for SRAM are disclosed. An example method includes after applying a voltage to a memory array: determining a first duration between the applying of the voltage and a first output of a first bit cell, the first output corresponding to a first value stored in the first bit cell, and determining a second duration between the applying of the voltage and a second output of a second bit cell, the second output corresponding to a second value stored in the second bit cell. The example method further includes determining a function based on a comparison of the first duration and the second duration, the function to establish an identification of a circuit that includes the memory array.