Abstract: The present inventions, in one aspect, are directed to micromachined resonator comprising: a first resonant structure extending along a first axis, wherein the first axis is different from a crystal axis of silicon, a second resonant structure extending along a second axis, wherein the second axis is different from the first axis and the crystal axis of silicon and wherein the first resonant structure is coupled to the second resonant structure, and wherein the first and second resonant structures are comprised of silicon (for example, substantially monocrystalline) and include an impurity dopant (for example, phosphorus) having a concentrations which is greater than 1019 cm-3, and preferably between 1019 cm-3 and 1021 cm-3.

Abstract: Provided is an electroluminescent display panel, including: a first region and a second region. The first region includes a plurality of first pixels each including a plurality of first type subpixels and at least one second type subpixel. The second region includes a plurality of second pixels each including a plurality of first type subpixels. The second type subpixel is configured to be light-transmitting and non-light-transmitting in an image acquisition state and in an image display state, respectively.

Abstract: A semiconductor device with improved reliability and a method for fabricating the same are provided. The semiconductor device includes a substrate, a first spacer defining a gate trench on the substrate, and a gate electrode in the gate trench, wherein a height of an upper surface of the gate electrode adjacent to the first spacer increases in a direction away from the first spacer.

Abstract: A transparent display device is disclosed, which may improve transmittance in a non-display area and at the same reduce resistance of power lines. The transparent display device includes a substrate provided with a display area, in which a plurality of subpixels are disposed, and a non-display area adjacent to the display area. The device includes a plurality of power lines provided in the non-display area over the substrate and extended in parallel in a first direction. The display area includes first non-transmissive areas provided with the plurality of subpixels and a first transmissive area provided between the first non-transmissive areas, the non-display area includes second non-transmissive areas provided with the plurality of power lines and a second transmissive area provided between the second non-transmissive areas.

Abstract: A display device includes a substrate, a thin film transistor, a first electrode, an organic light emitting layer, a second electrode and a black matrix layer which is includes a shielding area and an opening area. The opening area is formed in a position corresponding to an emission area where light is emitted from the organic light emitting layer and the shielding area includes a variable light shielding unit which is adjacent to the opening area and has a light transmittance varying in accordance with a wavelength of incident light and a light shielding unit with a constant light transmittance.

Abstract: A method of manufacturing a flip-chip light emitting diode includes: providing a transparent substrate and a temporary substrate, and bonding the transparent substrate with the temporary substrate; grinding and thinning the transparent substrate; providing a light-emitting epitaxial laminated layer having a first surface and a second surface opposite to each other, and including a first semiconductor layer, an active layer and a second semiconductor layer; forming a transparent bonding medium layer over the first surface of the light-emitting epitaxial laminated layer, and bonding the transparent bonding medium layer with the transparent substrate; defining a first electrode region and a second electrode region over the second surface of the light-emitting epitaxial laminated layer, and manufacturing a first electrode and a second electrode; and removing the temporary substrate.

Abstract: A display device includes a substrate; a barrier layer above a first surface of the substrate; a protective film below a second surface of the substrate opposite the first surface; an adhesive member between the substrate and the protective film; and an optical sensor below a second surface of the protective film opposite a first surface of the protective film that faces the second surface of the substrate.

Abstract: The present invention provides a pixel arrangement structure, a display panel and a display apparatus, each of the plurality of pixel units in the pixel arrangement structure comprises blue sub-pixels, red sub-pixels, and green sub-pixels; the blue sub-pixels, the red sub-pixels, and the green sub-pixels form a center-symmetric pattern, a total area of the blue sub-pixels is greater than a total area of the red sub-pixels, and the total area of the red sub-pixels is greater than a total area of the green sub-pixels, so that there is no need to share sub-pixels with adjacent pixel units, thereby improving the display resolution, and the phenomena of color fringing and edge jagged can be avoided.

Abstract: The present application discloses an optical semiconductor device. The optical semiconductor device includes a logic die, a memory die, and a sensor die. The logic die includes a front surface. The memory die includes a front surface positioned on the front surface of the logic die, and a back surface opposite to the front surface of the memory die. The sensor die includes a front surface positioned on the back surface of the memory die, a back surface opposite to the front surface of the sensor die, a sensor unit located at the back surface of the sensor die, a color filter positioned on the back surface of the sensor die, and a micro-lens positioned on the color filter.

Abstract: An object of the present invention is to provide a display device capable of achieving both an effect of preventing reflection of external light and improvement in utilization efficiency of light emitted from a light emitting element. An electroluminescent display device includes a substrate having a plurality of light emitting elements using electroluminescence, a ?/4 wavelength plate, and a polarizing plate including a patterned polarizing layer in this order, in which the patterned polarizing layer has a region A having a polarization degree of less than 80% and a region B having a polarization degree of 80% or more, and further, a position of the region A of the patterned polarizing layer corresponds to a position of the light emitting element of the electroluminescent substrate.

Abstract: A semiconductor device includes a semiconductor body having a first surface. A first trench extends in a vertical direction into the semiconductor body. The semiconductor device also includes a first interlayer in the first trench and a first dopant source in the first trench. The first interlayer is arranged between the first dopant source and the semiconductor body, and the first dopant source includes a first dopant species. The semiconductor device also includes a semiconductor area doped with the first dopant species and which completely surrounds the first trench at least at a depth in the semiconductor body and adjoins the first trench.

Abstract: A display panel includes a sub-pixel array and a plurality of photosensitive units. The sub-pixel array includes as first sub-pixel, a second sub-pixel and a third sub-pixel that are capable of emitting light of different colors. The plurality of photosensitive units are disposed under a light-emitting surface of the sub-pixel array. Each of the plurality of photosensitive units includes a photosensitive device, and the photosensitive device includes a photosensitive layer; and an orthographic projection of the photosensitive layer in the photosensitive device on a panel surface of the display panel has overlapping regions with orthographic projections of the first sub-pixel, the second sub-pixel and the third sub-pixel on the panel surface of the display panel.

Abstract: A display panel is provided. At least two of each of first pixels, each of second pixels, and each of third pixels of the display panel are alternately arranged. A shape of each of first pixels includes an ellipse or a circle. A shape of an edge of each of the second pixels or each of the third pixels corresponds to a concave arc. A sum of a radius of curvature of an edge of each of the first pixels and a width of a predetermined gap is equal to a radius of curvature of the concave arc corresponding to the edge of one of each of the second pixels and each of the third pixels. An aperture ratio of a pixel is effectively increased.

Abstract: A nitride semiconductor light-emitting element includes an n-type cladding layer including n-type AlGaN, and a multiple quantum well layer including a barrier layer that includes AlGaN and is located on the n-type cladding layer side, wherein the nitride semiconductor light-emitting element further comprises a trigger layer that is located between the n-type cladding layer and the barrier layer and comprises Si, wherein a plural V-pits starting from dislocations in the n-type cladding layer and ending in the multiple quantum well are formed in the n-type cladding layer and the multiple quantum well layer.

Abstract: A semiconductor device includes a first active fin protruding from a substrate, a first gate pattern covering a side surface and a top surface of the first active fin, and first source/drain patterns at opposite sides of the first gate pattern, each of the first source/drain patterns including a first lower side and a second lower side spaced apart from each other, a first upper side extended from the first lower side, a second upper side extended from the second lower side. The first lower side may be inclined at a first angle relative to a top surface of the substrate, the second upper side may be inclined at a second angle relative to the top surface of the substrate, and the first angle may be greater than the second angle.

Abstract: A photo-sensitive device includes a uniform layer, a gradated buffer layer over the uniform layer, a silicon layer over the gradated buffer layer, a photo-sensitive light-sensing region in the uniform layer and the silicon layer, a device layer on the silicon layer, and a carrier wafer bonded to the device layer.

Abstract: A semiconductor device includes fin patterns on a substrate, at least one gate electrode intersecting the fin patterns, source/drain regions on upper surfaces of the fin patterns, and at least one blocking layer on a sidewall of a first fin pattern of the fin patterns, the at least one blocking layer extending above an upper surface of the first fin pattern of the fin patterns, wherein a first source/drain region of the source/drain regions that is on the upper surface of the first fin pattern has an asymmetric shape and is in direct contact with the at least one blocking layer.

Abstract: Embodiments of a three-dimensional (3D) memory device with a corrosion-resistant composite spacer and method for forming the same are disclosed. In an example, a method for forming a 3D memory device is disclosed. A dielectric stack including a plurality of dielectric/sacrificial layer pairs is formed on a substrate. A memory string extending vertically through the dielectric stack is formed. A slit extending vertically through the dielectric stack is formed. A memory stack is formed on the substrate including a plurality of conductor/dielectric layer pairs by replacing, with a plurality of conductor layers, the sacrificial layers in the dielectric/sacrificial layer pairs through the slit. A composite spacer is formed along a sidewall of the slit. The composite spacer includes a first silicon oxide film, a second silicon oxide film, and a dielectric film formed laterally between the first silicon oxide film and the second silicon oxide film. A slit contact extending vertically in the slit is formed.

Abstract: Disclosed is a three-dimensional semiconductor memory device comprising a peripheral circuit structure on a first substrate, a second substrate on the peripheral circuit structure, first to fourth stack structures spaced apart in a first direction on the second substrate, first and second support connectors between the second and third stack structures, third and fourth support connectors between the third and fourth stack structures, and a through dielectric pattern penetrating the first stack structure and the second substrate. A first distance between the first and second support connectors is different from a second distance between the third and fourth support connectors.

Abstract: An opening, which is provided on the inner side of a first pixel electrode, which is a first electrode formed in a display region, is larger than an opening, which is provided on the inner side of a second pixel electrode, which is the first electrode formed in a dummy display region. Further, a light-emitting layer (a first light-emitting layer) formed in the display region has the same shape and the same size as a light-emitting layer (a second light-emitting layer) formed in the dummy display region.