Patents Examined by Hanway Chang
  • MALDI nozzle
    Patent number: 11615950
    Abstract: A nozzle for an ionisation source comprises: a light passage having an inlet end and an outlet end; and a gas flow passage in fluid communication with the light passage, wherein the gas flow passage is configured to convey, in use, a flow of gas into the light passage such that the flow of gas travels substantially towards the outlet end of the light passage.
    Type: Grant
    Filed: September 26, 2019
    Date of Patent: March 28, 2023
    Assignee: Micromass UK Limited
    Inventors: Paul Murray, Mark Towers, Matthew Henderson, Andrew Whatley
  • Method of automatically focusing a charged particle beam on a surface region of a sample, method of calculating a converging set of sharpness values of images of a charged particle beam device and charged particle beam device for imaging a sample
    Patent number: 11610755
    Abstract: A method of automatically focusing a charged particle beam on a surface region of a sample is provided. The method includes acquiring a plurality of images for a corresponding plurality of focusing strength values; calculating a plurality of sharpness values based on the plurality of images, the plurality of sharpness values are calculated with a sharpness function provided as a sum in a frequency space based on the plurality of images; and determining subsequent focusing strength values of the plurality of focusing strength values with a golden ratio search algorithm based one the calculated sharpness values.
    Type: Grant
    Filed: October 21, 2021
    Date of Patent: March 21, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Robert Trauner, Bernhard Schüler, Bernhard G. Mueller, Nikolai Knaub, Kulpreet Singh Virdi
  • Sample pretreatment device
    Patent number: 11607701
    Abstract: Provided is a sample pretreatment device configured to apply, to the surface of a sample, a solution in which a predetermined substance is dissolved or dispersed. In order to properly and efficiently unclog a nozzle due to the deposition of the crystal of a matrix substance, the device includes a spray unit (3) including a solution tube (32) for the solution to pass through, a gas tube (33) for a spray gas to pass through, and a nozzle part (30) configured to spray the solution arriving at the terminal end of the solution tube by ejection of the spray gas through the gas tube, as well as a cleaning liquid supplier (4, 41) configured to put a cleaning liquid on an opening of the nozzle part from outside the spray unit.
    Type: Grant
    Filed: July 13, 2020
    Date of Patent: March 21, 2023
    Assignee: SHIMADZU CORPORATION
    Inventors: Kazuteru Takahashi, Kenta Terashima
  • Scalable, electro-optically induced force system and method
    Patent number: 11605475
    Abstract: A technique is disclosed for electro-optically inducing a force to fabricated samples and/or devices with laser light. The technique uses the interaction of the oscillating electric field of the laser beam in opposition with the electric field produced by an appropriate electric charge carrier to achieve a net repulsive (or attractive) force on the component holding the electric charge. In one embodiment, force is achieved when the field near the charge carrier is modulated at a subharmonic of the electric field oscillation frequency of the laser and the relative phases of the light field and electric charge carrier field are controlled to provide optimal repulsion/attraction. The effect is scalable by applying the technique to an array of charge carrier fields sequentially as well as using higher power lasers and higher carrier field voltages.
    Type: Grant
    Filed: December 1, 2021
    Date of Patent: March 14, 2023
    Inventor: Geoffrey James Germann
  • EUV lithography apparatus
    Patent number: 11605477
    Abstract: An extreme ultra violet (EUV) light source apparatus includes a metal droplet generator, a collector mirror, an excitation laser inlet port for receiving an excitation laser, a first mirror configured to reflect the excitation laser that passes through a zone of excitation, and a second mirror configured to reflect the excitation laser reflected by the first mirror.
    Type: Grant
    Filed: August 27, 2021
    Date of Patent: March 14, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Cheng Hung Tsai, Sheng-Kang Yu, Shang-Chieh Chien, Heng-Hsin Liu, Li-Jui Chen
  • Apparatus and method for generating extreme ultraviolet radiation
    Patent number: 11602037
    Abstract: A target droplet source for an extreme ultraviolet (EUV) source includes a droplet generator configured to generate target droplets of a given material. The droplet generator includes a nozzle configured to supply the target droplets in a space enclosed by a chamber. In some embodiments, a nozzle tube is arranged within the nozzle of the droplet generator, and the nozzle tube includes a structured nozzle pattern configured to provide an angular momentum to the target droplets.
    Type: Grant
    Filed: August 27, 2021
    Date of Patent: March 7, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yu-Huan Chen, Yu-Chih Huang, Ming-Hsun Tsai, Shang-Chieh Chien, Heng-Hsin Liu
  • Laser interference fringe control for higher EUV light source and EUV throughput
    Patent number: 11592749
    Abstract: A method for generating an extreme ultraviolet (EUV) radiation includes simultaneously irradiating two or more target droplets with laser light in an EUV radiation source apparatus to produce EUV radiation and collecting and directing the EUV radiation produced from the two or more target droplet by an imaging mirror.
    Type: Grant
    Filed: October 18, 2021
    Date of Patent: February 28, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chansyun David Yang, Keh-Jeng Chang, Chan-Lon Yang
  • Semiconductor processing tool and methods of operation
    Patent number: 11576250
    Abstract: Some implementations described herein provide techniques and apparatuses for an extreme ultraviolet (EUV) radiation source that includes a backsplash-prevention system to reduce, minimize, and/or prevent the formation of tin (Sn) build-up in a tunnel structure of a collector flow ring that might otherwise be caused by the accumulation of Sn satellites. This reduces backsplash of Sn onto a collector of the EUV radiation source, increases the operational life of the collector (e.g., by increasing the time duration between cleaning and/or replacement of the collector), reduces downtime of the EUV radiation source, and/or enables the performance of the EUV radiation source to be sustained for longer time durations (e.g., by reducing, minimizing, and/or preventing the rate of Sn contamination of the collector), among other examples.
    Type: Grant
    Filed: August 19, 2021
    Date of Patent: February 7, 2023
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Cheng-Hao Lai, Ming-Hsun Tsai, Hsin-Feng Chen, Wei-Shin Cheng, Yu-Kuang Sun, Cheng-Hsuan Wu, Shang-Chieh Chien, Li-Jui Chen, Heng-Hsin Liu
  • Control of dynamic gas lock flow inlets of an intermediate focus cap
    Patent number: 11573495
    Abstract: A control system includes a plurality of pressure sensors, each to detect a pressure in a respective dynamic gas lock (DGL) nozzle control region of a plurality of DGL nozzle control regions. Each DGL nozzle control region includes one or more DGL nozzles. The control system includes a plurality of mass flow controllers (MFCs). Each MFC of the plurality of MFCs is to control a flow velocity in a respective DGL nozzle control region of the plurality of DGL nozzle control regions. The control system includes a controller to selectively cause one or more MFCs of the plurality of MFCs to adjust flow velocities in one or more DGL nozzle control regions of the plurality of DGL nozzle control regions based on pressures detected by the plurality of pressure sensors in DGL nozzle control regions of the plurality of DGL nozzle control regions.
    Type: Grant
    Filed: August 27, 2021
    Date of Patent: February 7, 2023
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chun-Kai Chang, Yu Sheng Chiang, Yu De Liou, Chi Yang, Ching-Juinn Huang, Po-Chung Cheng
  • Charged particle beam system
    Patent number: 11562881
    Abstract: A charged particle beam system includes a charged particle source that generates a first charged particle beam and a multi beam generator that generates a plurality of charged particle beamlets from an incoming first charged particle beam. Each individual beamlet is spatially separated from other beamlets. The charged particle beam system also includes an objective lens that focuses incoming charged particle beamlets in a first plane so that a first region in which a first individual beamlet impinges in the first plane is spatially separated from a second region in which a second individual beamlet impinges in the first plane. The charged particle beam system also includes a projection system and a detector system including a plurality of individual detectors.
    Type: Grant
    Filed: October 28, 2021
    Date of Patent: January 24, 2023
    Assignee: Carl Zeiss MultiSEM GmbH
    Inventors: Dirk Zeidler, Stefan Schubert, Ingo Mueller, Joerg Jacobi, Mario Muetzel, Antonio Casares, Christof Riedesel
  • Radiation source apparatus and method for using the same
    Patent number: 11553581
    Abstract: A method for using an extreme ultraviolet radiation source is provided. The method includes assembling a first droplet generator onto a port of a vessel; ejecting a target droplet from the first droplet generator to a zone of excitation in front of a collector; emitting a laser toward the zone of excitation, such that the target droplet is heated by the laser to generate extreme ultraviolet (EUV) radiation; stopping the ejection of the target droplet; after stopping the ejection of the target droplet, disassembling the first droplet generator from the port of the vessel; after disassembling the first droplet generator from the port of the vessel, inserting a cleaning device into the vessel through the port; and cleaning the collector by using the cleaning device.
    Type: Grant
    Filed: July 7, 2021
    Date of Patent: January 10, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chiao-Hua Cheng, Hsin-Feng Chen, Yu-Fa Lo, Yu-Kuang Sun, Wei-Shin Cheng, Yu-Huan Chen, Ming-Hsun Tsai, Cheng-Hao Lai, Cheng-Hsuan Wu, Shang-Chieh Chien, Heng-Hsin Liu, Li-Jui Chen, Sheng-Kang Yu
  • Mass spectrometry
    Patent number: 11532472
    Abstract: Provided is mass spectrometry including applying a laser beam to a matrix dot disposed on a surface of a measurement sample. One of: a laser spot appearing in the measurement sample when the laser beam is applied to the matrix dot; and the matrix dot, is completely enclosed in the other.
    Type: Grant
    Filed: July 9, 2021
    Date of Patent: December 20, 2022
    Assignee: RICOH COMPANY, LTD.
    Inventors: Kazumi Suzuki, Katsuyuki Uematsu, Hiroyuki Suhara
  • System and method for supplying target material in an EUV light source
    Patent number: 11533799
    Abstract: A system and a method for supplying target material in an EUV light source are provided. The system for supplying a target material comprises a priming assembly, a refill assembly and a droplet generator assembly. The priming is configured to transform the target material from a solid state to a liquid state. The refill assembly is in fluid communication with the priming assembly and configured to receive the target material in the liquid state from the priming assembly. Further, the refill assembly includes a purifier configured to purify the target material in the liquid state. The droplet generator assembly is configured to supply the target material in the liquid state from the refill assembly.
    Type: Grant
    Filed: July 9, 2021
    Date of Patent: December 20, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Hsin-Feng Chen, Ming-Hsun Tsai, Li-Jui Chen, Shang-Chieh Chien, Heng-Hsin Liu, Cheng-Hao Lai, Yu-Huan Chen, Wei-Shin Cheng, Yu-Kuang Sun, Cheng-Hsuan Wu, Yu-Fa Lo, Chiao-Hua Cheng
  • Method and system for generating droplets for EUV photolithography processes
    Patent number: 11528797
    Abstract: An extreme ultraviolet (EUV) photolithography system generates EUV light by irradiating droplets with a laser. The system includes a droplet generator with a nozzle and a piezoelectric structure coupled to the nozzle. The generator outputs groups of droplets. A control system applies a voltage waveform to the piezoelectric structure while the nozzle outputs the group of droplets. The waveform causes the droplets of the group to have a spread of velocities that results in the droplets coalescing into a single droplet prior to being irradiated by the laser.
    Type: Grant
    Filed: April 16, 2021
    Date of Patent: December 13, 2022
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yu-Kuang Sun, Cheng-Hao Lai, Yu-Huan Chen, Wei-Shin Cheng, Ming-Hsun Tsai, Hsin-Feng Chen, Chiao-Hua Cheng, Cheng-Hsuan Wu, Yu-Fa Lo, Shang-Chieh Chien, Li-Jui Chen, Heng-Hsin Liu
  • Desorption ion source with dopant-gas assisted ionization
    Patent number: 11527397
    Abstract: Disclosed is a device to generate ions from a deposited sample, comprising: A chamber which is arranged and designed to keep the deposited sample in a conditioned environment comprising a dopant gas, A desorption device which is arranged and designed to desorb the deposited sample in the chamber using an energy burst, An ionization device which, for the purpose of ionization, is arranged and designed to irradiate the desorbed sample in the chamber using coherent electromagnetic waves or expose it to an electric discharge, a plasma, or light of an arc discharge lamp with broadband emission spectrum, which are chosen such that the dopant gas is receptive to them, and An extraction device which is arranged and designed to extract ions from the desorbed sample and transfer them into an analyzer. Disclosed is also a method which is preferably conducted on such a device.
    Type: Grant
    Filed: August 3, 2021
    Date of Patent: December 13, 2022
    Inventors: Christoph Hauke Manfred Bookmeyer, Jens Soltwisch, Klaus Dreisewerd
  • Ion source repeller
    Patent number: 11521821
    Abstract: An ion source has an arc chamber having one or more arc chamber walls defining and interior region of the arc chamber. A cathode electrode is disposed along an axis. A repeller has a repeller shaft and a ceramic target member separated by a gap. The repeller shaft is not in electrical or mechanical contact with the target member, and the repeller shaft is configured to indirectly heat the target member. The target member, can be a cylinder encircling the repeller shaft, where the gap separates the cylinder from the repeller shaft. A top cap can enclose the cylinder can be separated from a top repeller surface of the repeller shaft by the gap. A target hole can be in the top cap. The target member can be supported by a bottom liner of the arc chamber or a support member mechanically and electrically coupled to the repeller shaft.
    Type: Grant
    Filed: April 6, 2021
    Date of Patent: December 6, 2022
    Assignee: Axcelis Technologies, Inc.
    Inventors: Steven T. Drummond, Neil Colvin, Paul Silverstein
  • Ion gun and vacuum processing apparatus
    Patent number: 11521822
    Abstract: An ion gun including an anode, a cathode opposed to the anode and having a first portion and a second portion, and a magnet configured to form a magnetic field space between the first portion and the second portion. An annular gap including a linear portion and a curved portion is provided between the first portion and the second portion of the cathode. The magnet is configured to form, between the first portion and the second portion of the curved portion, a magnetic field line having a bottom inside a cross-sectional centerline of the gap.
    Type: Grant
    Filed: May 31, 2022
    Date of Patent: December 6, 2022
    Assignee: CANON ANELVA CORPORATION
    Inventor: Tsutomu Hiroishi
  • System and method for predicting stochastic-aware process window and yield and their use for process monitoring and control
    Patent number: 11521825
    Abstract: In one embodiment, a method includes generating a model trained to predict a low-probability stochastic defect, using the model to predict the low-probability stochastic defect, determining a process window based on the low-probability stochastic defect, and controlling, based on the process window, a lithography tool to manufacture a device.
    Type: Grant
    Filed: March 12, 2021
    Date of Patent: December 6, 2022
    Assignee: Fractilia, LLC
    Inventor: Chris Mack
  • Automated application of drift correction to sample studied under electron microscope
    Patent number: 11514586
    Abstract: Methods and systems for calibrating a transmission electron microscope are disclosed. A fiducial mark on the sample holder is used to identify known reference points so that a current collection area and a through-hole on the sample holder can be located. A plurality of beam current and beam area measurements are taken, and calibration tables are extrapolated from the measurements for a full range of microscope parameters. The calibration tables are then used to determine electron dose of a sample during an experiment at a given configuration.
    Type: Grant
    Filed: August 3, 2022
    Date of Patent: November 29, 2022
    Assignee: PROTOCHIPS, INC.
    Inventors: Franklin Stampley Walden, II, John Damiano, Jr., David P. Nackashi, Daniel Stephen Gardiner, Mark Uebel, Alan Philip Franks, Benjamin Jacobs, Joshua Brian Friend, Katherine Elizabeth Marusak, Nelson L Marthe, Jr., Benjamin Bradshaw Larson
  • Ion guide with varying multipoles
    Patent number: 11515137
    Abstract: An ion guide includes electrodes elongated along an axis from an entrance end to an exit end and spaced around the axis to surround an interior. The electrodes have polygonal shapes with inside surfaces disposed at a radius from the axis and having an electrode width tangential to a circle inscribed by the electrodes. An aspect ratio of the electrode width to the radius varies along the axis. The electrodes are configured to generate a two-dimensional RF electrical field in the interior having a multipole composition comprising one or more lower-order multipole components and one or more higher-order multipole components and varying along the axis in accordance with the varying aspect ratio, and having an RF voltage amplitude that varies along the axis.
    Type: Grant
    Filed: April 27, 2021
    Date of Patent: November 29, 2022
    Assignee: AGILENT TECHNOLOGIES, INC.
    Inventors: Tong Chen, Gershon Perelman, Curt A. Flory