Abstract: A transparent electrode film containing gold for covering the uppermost layer of a group III nitride semiconductor device has a first layer formed on the uppermost layer and not thicker than 15 Å, and a second layer formed on the first layer and containing gold. The first layer contains a first metal having an ionization potential lower than that of gold, and the second layer further contains a second metal having an ionization potential lower than that of gold.

Abstract: A filter is provided that is convertible from a filter configuration to an open, stent-like configuration. The filter includes a plurality of intraluminal filter elements (filter legs) that may be formed into a single cone or dual cone filter structure. A retainer secures the filter legs in the filter configuration upon initial deployment within a vessel. The retainer is then either self-releasing or removable to permit the filter legs to expand from the filter configuration into what may generally be described as an open or stent-like configuration. A filter web extends, at least in part, between the filter legs.

Abstract: A semiconductor integrated circuit device includes a plurality of internal circuits formed in a circuit forming region; a plurality of power lines separately connected to the internal circuits; a signal wire routed between the internal circuits; and a protection circuit connected to the power lines, the protection circuit including a parallel circuit having a first rectifying element formed in a p-type semiconductor region and a second rectifying element formed in an n-type semiconductor region.

Abstract: In a semiconductor device having high voltage resistance and low ON voltage characteristics, charge-storage regions (insulation layer) are formed in a drift region. Formed above the drift region are a channel region, an emitter region, trench-type gate electrodes, and an emitter electrode. Strips of the insulation layer extend in a direction intersecting a direction of extension of the gate electrodes, and form a stripe pattern. The insulation layer curbs extraction of holes into the channel region. Openings in the stripe pattern of the insulation layer form depletion layers.

Abstract: Methods and devices for forming an anastomosis utilize a graft vessel secured to a vessel coupling that is fixed to a target vessel without using suture. The vessel coupling may be collapsed for introduction into the target vessel and then expanded to engage the vessel wall. The vessel coupling may be a stent attached to a graft vessel to form a stent-graft assembly. The anastomosis may be carried out to place the graft and target vessels in fluid communication while preserving native proximal flow through the target vessel, which may be a coronary artery. As a result, blood flowing through the coronary artery from the aorta is not blocked by the vessel coupling and thus is free to move past the site of the anastomosis.

Abstract: The present invention is a device and method for installing a graft within a vascular lumen of a patient so as to substantially reduce fluid flow around the graft and axial migration of the graft. By first deploying a substantially rigid stent within the vascular lumen of the patient so as to expand the vascular lumen beyond its initial natural diameter, the substantially rigid stent is thereby frictionally engaged to the wall of the vascular lumen. A graft is then deployed within the lumen of the substantially rigid stent, with the graft's attachment system being at substantially the same longitudinal level within the target vessel as the substantially rigid stent.

Abstract: Provided are a non-volatile flash memory device and a method of making the non-volatile flash memory device. A common source line is formed simultaneously with the formation of stacked transistors. The common source line is formed of the same material layer as floating gate pattern. The common source region and a scribe line region are simultaneously formed thorough the same photolithography process in a semiconductor substrate. Additionally, the common source line and butted contact are patterned simultaneously through the same photolithography process. Accordingly, the common source line process can be advantageously completed with very low cost and simplicity.

Abstract: A GaN based semiconductor laser device which can prevent guided mode light emitted from the active layer from leaking through the cladding layer to the underlying layer without making the cladding layer excessively thick is provided. The device is characterized in that if an n-type cladding layer, a waveguide layer and a p-type cladding layer are collectively defined as a first three-layer waveguide path and a substrate, an underlying layer and an n-type cladding layer are collectively defined as a second three-layer waveguide path, then effective refractive indices of light propagating through the first and second three-layer waveguide paths are set different from each other.

Abstract: A method for manufacturing a trench-gate type power semiconductor device is provided. A drift region having a low concentration of a first conductivity type and a body region of a second conductivity type are formed on a semiconductor substrate having a high concentration of the first conductivity type. A trench is formed using a nitride layer pattern and a sidewall oxide layer formed at sidewalls of the nitride layer pattern as a mask, and then the sidewall oxide layer is removed. The corners of the trench are rounded by performing a heat treatment in a hydrogen atmosphere. A source region having a high concentration of the first conductivity type is formed using the nitride layer pattern as a mask. The nitride layer pattern is removed, and an upper oxide layer pattern is formed to cover a predetermined portion of the source region and the gate conductive layer. A body contact region of the second conductivity type is formed using the upper oxide layer pattern as a mask.

Abstract: Methods of forming front-end-of the line (FEOL) capacitors such as polysilicon-polysilicon capacitors and metal-insulator-silicon capacitors are provided that are capable of incorporating a high-dielectric constant (k of greater than about 8) into the capacitor structure. The inventive methods provide high capacitance/area devices with low series resistance of the top and bottom electrodes for high frequency responses. The inventive methods provide a significant reduction in chip size, especially in analog and mixed-signal applications where large areas of capacitance are used.

Abstract: Submicron-dimensioned, MOSFET devices are formed using multiple implants for forming an impurity concentration distribution profile exhibiting three impurity concentration peaks at a predetermined depths below the semiconductor surface substrate. The inventive method reduces “latch-up” and “punch-through” with controllable adjustment of the threshold voltage.

Abstract: An expansion mechanism that includes an elongate instrument and a plurality of struts arranged around the elongate instrument provides radial expansion of a medical device. Each strut has a first end pivotally connected to the elongate instrument and a second strut that expands radially outward. Each strut further carries a flexible line which has a proximal end and a distal end. The distal end of each line passes beyond the second end of the strut which carries it and is attached to the strut immediately adjacent the strut which carries it. Methods of using such an expansion mechanism are also disclosed, particularly to provide deployment of medical devices within a patient's blood vascular system.

Abstract: An expansion frame system for deploying medical devices in a patient's body cavity. The system typically includes an inner wire disposed within a lumen of an outer wire. Distal ends of the inner and outer wires are attached to a substantially circular frame at first and second points. During use, the outer wire is displaced relative to the inner wire, causing the circular frame to rotate about an axis perpendicular to the line defined by the first and second points. Medical devices, such as a filter, a stent, an occluder or a manometer, can be mounted on the circular frame. The diameter of the expansion frame can be varied to achieve optimal contact with the luminal wall of the body cavity. Methods of using the expansion frame system for temporary or permanent placement of a medical device is disclosed.

Abstract: A composite layer of low k dielectric material for integrated circuit structures comprising a thick lower conformal barrier layer of low k dielectric material, a low k center layer of carbon-doped silicon oxide dielectric material having good gap filling capabilities, and a thick upper conformal barrier layer of low k dielectric material. The thick lower conformal barrier layer of low k dielectric material protects the lower surface of the main low k dielectric layer and also protects against misaligned vias entering the main low k dielectric material below the height of the metal line without raising the capacitance of the structure as would a lower barrier layer of non-low k dielectric material.

Abstract: A semiconductor structure, e.g., a high electron mobility transistor structure, is formed by using metamorphic growth and strain compensation. The structure includes a substrate, a graded layer over the substrate, a first donor/barrier layer over the graded layer, and a channel layer over the first donor/barrier layer. The substrate has a substrate lattice constant, and the graded layer has a graded lattice constant. The graded layer has a first lattice constant near a bottom of the graded layer substantially equal to the substrate lattice constant and a second lattice constant near a top of the graded layer different than the first lattice constant. The first donor/barrier layer has a third lattice constant, and the channel layer has a fourth lattice constant. The second lattice constant is intermediate the third and fourth lattice constants.

Abstract: An elongate tubular body extends between a rotatable cutter and a control. The cutter is connected to the control with a rotatable element. A vacuum is applied through an annular passage defined between the tubular body and the rotatable element. The tubular body has a sufficiently small outside diameter and sufficient kink resistance and pushability to navigate through the internal carotid artery and at least into the M3 segment of the middle cerebral artery.

Abstract: A pad is formed on a substrate with a pad formed to approximate to the wire. Silicon oxide films are formed to cover the wire and the pad. A contact hole is formed through the silicon oxide films. A side wall oxide film is formed on the side surface and the bottom surface of the contact hole except an exposed surface of the pad. A conductive layer is formed to be electrically connected with the pad. When the contact hole is formed to overlap with the wire and the pad by misalignment or the like, the side wall oxide film electrically insulates the conductive layer and the wire from each other, thereby preventing electrical shorting and obtaining a semiconductor device attaining high integration and refinement.

Abstract: A method for forming a thin film transistor (TFT) is disclosed. The invention uses metal electroless plating or chemical displacement processes to form metal clusters adjacent the sidewall of amorphous silicon active region pattern so as to crystallize the amorphous silicon amid the subsequently performed metal induced lateral crystallization (MILC) process. The amorphous silicon is crystallized to form polysilicon having parallel grains. Since the amorphous silicon will crystallize with a specific angle which is measured between the grain orientation and the side wall of the amorphous silicon, a tilt channel connecting the source and drain region of the TFT is utilized to upgrade the electron mobility across the tilt channel, wherein the grain orientation of polysilicon in the tilt channel perpendicular to a gate electrode which is subsequently formed above the tilt channel.

Abstract: A plastic encapsulated semiconductor light emitting device comprises a plurality of leads 1, 2, one of which is formed with a dished portion 5; a semiconductor light emitting element 3 attached on a bottom surface 6 of the dished portion 5 for electrical connection of the light emitting element across the plurality of leads 1, 2; a plastic encapsulant 9 for sealing each end of the leads 1, 2, and the semiconductor light emitting element 3; a light-permeating cover 20 attached to an outer surface of the plastic encapsulant 9; and fluorescent particles 16 contained in the cover 20. As the number of fluorescent particles 16 at the vertex of the upper portion 22 is larger than that of the fluorescent particles 16 in the cylindrical lower portion 21, the semiconductor light emitting device can emit light with the nearly uniform light wavelength at any angular distance from the central axis of the plastic encapslant 9.

Abstract: Novel methods and devices which provide enhanced mixing and application of two liquid components to form a biomaterial with minimized aerosols is achieved using air flow rates below about 1.25 liters/minute in combination with a ratio of air flow to total liquid flow of from about 150:1 up to about 1500:1. Preferably the air flow is below about 1 liter/minute and the ratio of air flow to total liquid flow is from about 200:1 to about 1200:1. The parameters are ideally suited for the spray application of components which form a surgical sealant, e.g., a fibrin sealant. Also a part of the present invention are novel application methods for biomaterial, e.g., surgical sealant, components at liquid flows below 1.9 ml/minute, novel methods involving the mixing of such components on the exit surface of a spray tip or nozzle, novel spray tips and biomaterial applicators and methods for making such applicators.