Abstract: The invention relates to a sample carrier for a transmission electron microscope. When using state of the art sample carriers, such as half-moon grids in combination with detectors detecting, for example, X-rays emitted at a large emittance angle, shadowing is a problem. Similar problems occur when performing tomography, in which the sample is rotated over a large angle. The invention provides a solution to shadowing by forming the parts of the grid bordering the interface between sample and grid as tapering parts.
Abstract: A virus removal device with an ultraviolet LED may be provided that includes: an operating member; an ultraviolet LED configured to irradiate ultraviolet light onto an object under an operation of the operating member; and a driving means configured to generate a driving force so that the operating member is moved.
Type:
Grant
Filed:
October 12, 2011
Date of Patent:
October 13, 2015
Assignee:
LG INNOTEK CO., LTD.
Inventors:
Ji Hyoung Maeng, Dong Nyung Lim, Sang Jun Hong, Young Suck Byun, Dae Soo Jeong
Abstract: A radiation therapy apparatus including a robot supporting a robot head; a therapeutic radiation source attached to the robot head; a collimator for adjusting a radiation field shape of therapeutic radiation radiated from the therapeutic radiation source; a first therapeutic radiation detector attached to the robot head; a couch configured to support a patient lying supine thereon; a second therapeutic radiation detector for detecting the therapeutic radiation, disposed opposite the first therapeutic radiation detector with the couch disposed therebetween; at least two X-ray sources and detectors for position detection of a marker and/or a treatment target; an image processor for reconstructing an image of the treatment target; and a CPU that computes the intensity, irradiation direction, dose, and dose distribution of the therapeutic radiation, and dose absorbed by the treatment target, radiation field shape, and position of the treatment target in real time for feedback to a next irradiation.
Abstract: In accordance with an embodiment, a sample includes a base material and a metal-based heavy element compound. The base material includes a tunnel structure portion with a cavity portion. The metal-based heavy element compound fills the cavity portion of the tunnel structure portion. The metal-based heavy element compound has a thickness that at least locally allows passage of a charged particle beam.
Abstract: The present disclosure generally provides devices and methods for facilitating treatment of a tip portion of an emitter of an electrospray column. The column includes a sheath at a distal end that is normally biased in an extended position that covers the tip portion, and is in a retracted positioning during use that exposes the tip portion. The devices of the present disclosure provide a longitudinally extending support member, a laterally extending sheath engagement member, and a laterally extending column engagement member. The devices are configured such that when the devices and column are coupled, the column engagement member of the device engages a lateral surface at a proximal portion of the column, and the sheath engagement member engages and retracts the distal sheath of the column to expose the tip portion of the emitter.
Abstract: A pattern defect inspection method includes generating electron beam irradiation point track data on the basis of first data on an inspection target pattern, irradiating the electron beam to the inspection target pattern in accordance with the electron beam irradiation point track data, detecting secondary electrons generated from the inspection target pattern due to the irradiation of the electron beam, acquiring second data regarding a signal intensity of the secondary electrons from a signal of the detected secondary electrons, and detecting an abnormal point from the second data and outputting the abnormal point as a defect of the inspection target pattern. The electron beam irradiation point track data includes data on a track of irradiation points of an electron beam to the inspection target pattern and is intended to control over scanning with the electron beam, the electron beam irradiation point track data.
Abstract: In accordance with some aspects of the present disclosure, a maskless interferomeric lithography system for fabricating a three-dimensional (3D) photonic crystal using a multiple two-beam-exposures is disclosed. The system can comprise an illumination system comprising an optical arrangement operable to receive radiation from a radiation source and provide three or more tilted two-beam interference pattern exposures to be combined into a three-dimensional pattern; and a substrate operable to be supported by a substrate table, wherein the substrate comprises a photoresist formed on a top surface of the substrate and operable to receive the three-dimensional pattern and wherein means are provided to adjust the position of the substrate in all six mechanical degrees of freedom.
Abstract: Systems and methods are described for laser ablation of an analyte from a specimen and capturing of the analyte in a dispensed solvent to form a testing solution. A solvent dispensing and extraction system can form a liquid microjunction with the specimen. The solvent dispensing and extraction system can include a surface sampling probe. The laser beam can be directed through the surface sampling probe. The surface sampling probe can also serve as an atomic force microscopy probe. The surface sampling probe can form a seal with the specimen. The testing solution including the analyte can then be analyzed using an analytical instrument or undergo further processing.
Type:
Grant
Filed:
May 1, 2014
Date of Patent:
September 29, 2015
Assignees:
UT-Battelle, LLC, University of Tennessee Research Foundation
Inventors:
Gary J. Van Berkel, Vilmos Kertesz, Olga S. Ovchinnikova
Abstract: An ion implantation system includes a beamline configured to direct an ion beam toward an end station configured to hold or support a workpiece, and a scanning system. The scanning system is configured to scan the end station past the ion beam in a two-dimensional fashion comprising a first scan axis along a first direction and a second scan axis along a second direction that is different than the first direction. The system further includes a supplemental scanning component operably associated with the scanning system, and configured to effectuate a scanning of the ion beam with respect to the end station along a third scan axis having a third direction that is different than the first direction.
Abstract: Systems and methods are used to analyze a sample using variable mass selection window widths. A tandem mass spectrometer is instructed to perform at least two fragmentation scans of a sample with different mass selection window widths using a processor. The tandem mass spectrometer includes a mass analyzer that allows variable mass selection window widths. The selection of the different mass selection window widths can be based on one or more properties of sample compounds. The properties may include a sample compound molecular weight distribution that is calculated from a molecular weight distribution of expected compounds or is determined from a list of molecular weights for one or more known compounds. The tandem mass spectrometer can also be instructed to perform an analysis of the sample before instructing the tandem mass spectrometer to perform the at least two fragmentation scans of the sample.
Abstract: A beam writing apparatus includes a unit to obtain a specific value by calculating an integer by dividing a total irradiation time by a multiplied value of a region number and a repeating times number, and by multiplying the integer by the repeating times number, to add the repeating times number to the specific value when a region is in the multiple writing unit regions and is not a specific region and when a region number of the multiple writing unit region, defined excluding the specific region, is below or equal to a value obtained by dividing the total irradiation time by the multiplied value of the region number and the repeating times number, to obtain a first remainder, and dividing the first remainder by the repeating times number, and to treat an added value of the repeating times number and the specific value, as a total irradiation time.
Abstract: In some aspects, an ion implantation system is disclosed that includes an ion source for generating a ribbon ion beam and at least one corrector device for adjusting the current density of the ribbon ion beam along its longitudinal dimension to ensure that the current density profile exhibits a desired uniformity. The ion implantation system can further include other components, such as an analyzer magnet, and electrostatic bend and focusing lenses, to shape and steer the ion beam to an end station for impingement on a substrate. In some embodiments, the present teachings allows the generation of a nominally one-dimensional ribbon beam with a longitudinal size greater than the diameter of a substrate in which ions are implanted with a high degree of longitudinal profile uniformity.
Type:
Grant
Filed:
March 15, 2013
Date of Patent:
September 22, 2015
Assignee:
Nissin Ion Equipment Co., Ltd.
Inventors:
Sami K Hahto, Nariaki Hamamoto, Tetsuya Igo
Abstract: A method and apparatus are disclosed for controlling a semiconductor process temperature. In one embodiment a thermal control device includes a heat source and a housing comprising a vapor chamber coupled to the heat source. The vapor chamber includes an evaporator section and a condenser section. The evaporator section has a first wall associated with the heat source, the first wall having a wick for drawing a working fluid from a lower portion of the vapor chamber to the evaporator section. The condenser section coupled to a cooling element. The vapor chamber is configured to transfer heat from the heat source to the cooling element via continuous evaporation of the working fluid at the evaporator section and condensation of the working fluid at the condenser section. Other embodiments are disclosed and claimed.
Type:
Grant
Filed:
October 4, 2012
Date of Patent:
September 15, 2015
Assignee:
VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
Abstract: An extreme ultraviolet light generation apparatus may include a chamber containing a plasma generation region irradiated by a pulse laser beam from a laser apparatus, a target supply device configured to supply a plurality of targets consecutively to the plasma generation region in the chamber, a target detection unit configured to detect a target outputted from the target supply device, and a laser controller configured to control the laser apparatus; the laser controller generating a light emission trigger instructing a laser device included in the laser apparatus to emit a pulse laser beam, and outputting the generated light emission trigger to the laser apparatus, in accordance with a detection signal from the target detection unit; and the laser controller adjusting generation of the light emission trigger outputted consecutively to the laser apparatus so that a time interval of the light emission trigger is within a predetermined range.
Abstract: Several embodiments described herein are drawn to methods of identifying an analyte on a subject's skin, methods of generating a fingerprint, methods of determining a physiological change in a subject, methods of diagnosing health status of a subject, and assay systems for detecting an analyte and generating a fingerprint, by nanostructure-initiator mass spectrometry (NIMS).
Type:
Grant
Filed:
September 28, 2012
Date of Patent:
September 8, 2015
Assignee:
The Regents of the University of California
Inventors:
Marion Leclerc, Benjamin Bowen, Trent Northen
Abstract: A Fourier transform ion cyclotron resonance mass spectrometer (FT-ICR MS) includes: an ionization source generating ions; a deceleration lens, on which the ions generated by the ionization source and spatially dispersed are incident, selectively decelerating the incident ions so as to decrease the distance between the ions; and an ion cyclotron resonance cell on which the ions passing through the deceleration lens are incident. By preventing dispersing of ions due to mass difference and converging the ions using the deceleration lens, the mass range that can be measured at one time can be extended. Also, measurement sensitivity can be improved since the ions are effectively introduced to the ICR cell.
Type:
Grant
Filed:
November 21, 2011
Date of Patent:
September 8, 2015
Assignee:
KOREA BASIC SCIENCE INSTITUTE
Inventors:
Myoung Choul Choi, A Leum Park, Hyun Sik Kim, Seung Yong Kim, Jong Shin Yoo
Abstract: Device and method for synchronously switching activating a first and second charge accumulation section (31, 32) for a duration of a first and second predetermined sub-frame and a first and second X-ray source until lapse of a predetermined time frame for each of the first and second charge accumulation section (31, 32) for the accumulation of a plurality of temporally distributed partial charges according to an origin of a respective one of the plurality of spatially distributed X-ray sources so as to establish a specific relation between the focal spot position and a rule for accumulating the respective partial measurements, e.g. temporally distributed partial charges, belonging to the same focal spot positions, and to keep the focal spot temperature low by only activating the focal spot for a limited time according to a sub-frame.
Type:
Grant
Filed:
March 4, 2011
Date of Patent:
September 1, 2015
Assignee:
Koninklijke Philips N.V.
Inventors:
Rainer Pietig, Walter Ruetten, Christoph Herrmann
Abstract: A method for controlling dosage application during irradiation of a moveable target volume in a body with an energy beam by scanning the target volume includes, before irradiating an i-th grid position, determining a dosage during the irradiation process using the movement data, wherein the dosage already contains the i-th grid position during irradiation of the previous grid positions (1<=k<i). Depending on the determined dosage that already contains the i-th grid position during the irradiation of the previous grid positions (1<=k<i), a compensation value for the i-th grid position is calculated, and depending on the compensation value and on the nominal particle fluence for the i-th grid position, a compensated particle fluence (Fikomp) is calculated for the i-th grid position in order to irradiate the i-th grid position with the compensated particle fluence (Fikomp).
Abstract: System for sterilization of objects (B) by electron bombardment comprising a chamber (2) provided with an inlet (4) and an outlet (6) through which objects (B) are input and output, said system between the inlet (4) and the outlet (6) comprising a treatment zone (II), a routing zone (I) upstream from the treatment zone (II) and an evacuation zone (III) downstream from the treatment zone (II), and means of conveying objects (B) from the inlet (4) to the outlet (6), the treatment zone (II) comprising at least one electron accelerator and a conveyor (9), the routing zone (I) and the evacuation zone (III) each including at least one radiation shielding wall (16) protecting against ionizing radiation and means allowing objects (B) to pass over the radiation shielding wall (16) passing over the top of said radiation shielding wall (16).
Abstract: The present invention relates to a device for the hygienization of medical instruments, in particular stethoscopes. In particular, the present invention relates to a hygienization or sterilization system (1) of a medical-healthcare instrument, comprising a hygienization or sterilization device (2) and a coupling member (3) associable to said medical-healthcare instrument, characterized in that the coupling between said coupling member (3) and said device (2) is actuated by magnetic coupling means.