Abstract: A focused ion beam system includes a gas field ion source which generates gas ions, an ion gun unit which accelerates the gas ions and radiates the gas ions as an ion beam, a beam optical system which includes at least a focusing lens electrode and radiates the ion beam onto a sample, and an image acquiring mechanism which acquires an FIM image of a tip of an emitter based on the ion beam. The image acquiring mechanism includes an alignment electrode which is disposed between the ion gun unit and the focusing lens electrode and adjusts a radiation direction of the ion beam, an alignment control unit which applies an alignment voltage to the alignment electrode, and an image processing unit which combines a plurality of FIM images acquired when applying different alignment voltages to generate one composite FIM image.

Abstract: Ion sources, systems and methods are disclosed.

Abstract: An ion implantation system provides ions to a workpiece positioned in a vacuum environment of a process chamber on a cooled chuck. A pre-chill station within the process chamber has a chilled workpiece support configured to cool the workpiece to a first temperature, and a post-heat station within the process chamber, has a heated workpiece support configured to heat the workpiece to a second temperature. The first temperature is lower than a process temperature, and the second temperature is greater than an external temperature. A workpiece transfer arm is further configured to concurrently transfer two or more workpieces between two or more of the chuck, a load lock chamber, the pre-chill station, and the post-heat station.

Abstract: An electromagnetic wave emission device includes a nonlinear crystal which receives exciting light Lp having two wavelength components ?1 and ?2, and outputs terahertz waves L1-L6, a total reflection layer which is in contact with the nonlinear crystal, and totally reflects the terahertz waves L2, L4, and L6 output from the nonlinear crystal, a substrate which mounts the total reflection layer, and top clads which are placed on an opposing surface of the nonlinear crystal, and transmit the terahertz waves L1-L6.

Abstract: Illustrative embodiments of the present invention are directed to devices and methods for ion generation. One such device includes a substrate. The substrate is disposed within a housing that is configured to contain a gas. The substrate includes an interior surface that at least partially defines an interior volume. The substrate also includes a number of channels with walls. Nano-tips are disposed on the walls of the channels.

Abstract: An X-ray image diagnosis apparatus according to embodiments includes: a table on which an examinee lies down; a table driving unit configured to move the table upward and downward; an imaging device configured to take a side image of the examinee by irradiating a side of the examinee on the table with X-rays and detecting X-rays transmitted through the examinee; and a controller configured to control the table driving unit so that the table driving unit moves the table upward or downward to make a center position of the examinee on the table in a thickness direction of the examinee coincide with a center position of the side image in an upward-downward moving direction of the table.

Abstract: A apparatus includes a unit to operate a first dose of a beam corrected for a proximity effect for each of second mesh regions of a second mesh size obtained by dividing the first mesh size by a product of a natural number and a number of passes, by using a dose model using a dose threshold; a unit to operate a representative temperature rising due to heat transfer originating from irradiation of the beam by using a dose for an applicable pass of the first dose and a unit to operate a polynomial having a term obtained by multiplying a dose modulation coefficient based on the representative temperature by a pattern area density as an element, and a dose that makes a difference between a value obtained by operating the polynomial and the dose threshold within a tolerance is used.

Abstract: Clearance check devices, systems, and methods that can be used to indicate whether a proposed treatment plan will cause a collision between a patient/couch and a medical device, such as a linac, are described herein. Some devices and/or systems include an adjustable clearance member to account for the rotation of the medical device and a rotatable frame segment to account for the rotation of the patient or couch. Others include a frame segment that has an inner surface defining an arc that has a radius that is substantially equal to or less than an orbital radius of a centermost portion of a medical equipment component. Still others are disclosed.

Abstract: Methods and apparatuses for portable mass spectrometry are disclosed. The apparatuses comprise at least one source of ionized analyte, at least one frequency scanning subsystem, at least one detector, and optionally at least one vacuum pump, and are portable. In some embodiments, the apparatuses comprise multiple sources of ionized analyte and/or are configured to obtain mass spectra of a large analyte, such as analyte with an m/z ratio of at least 105, or analyte with a molecular weight of at least 105 Da, as well as mass spectra of small molecule analyte. In some embodiments, the methods comprise obtaining mass spectra with a portable apparatus described above.

Abstract: The disclosed radiograph acquisition device has: a selection unit that selects one radiation detection device from among a plurality of radiation detection devices that can convert radiation to radiographs; and an acquisition unit that acquires the radiograph of one radiation detection device when radiation is radiated at a subject, and the radiograph of at least one other radiation detection device aside from the one radiation device among the plurality of radiation detection devices.

Abstract: There are disclosed herein various implementations of a method and system for ion implantation at high temperature surface equilibrium conditions. The method may include situating a III-Nitride semiconductor body in a surface equilibrium chamber, establishing a gas pressure greater than or approximately equal to a surface equilibrium pressure of the III-Nitride semiconductor body, and heating the III-Nitride semiconductor body to an elevated implantation temperature in the surface equilibrium chamber while substantially maintaining the gas pressure. The method also includes implanting the III-Nitride semiconductor body in the surface equilibrium at the elevated implantation temperature chamber while substantially maintaining the gas pressure, the implanting being performed using an ion implanter interfacing with the surface equilibrium chamber.

Abstract: Provided is a technique of analyzing particles in real time while collecting and condensing the particles continuously. Gas and/or particles as a detection target substance that are attached to an authentication target 2 are removed by air flow from a blowing region 5. The removed sample is sucked and is condensed and sampled at a sampling region 10, and ions of the sample are generated at an ion source 21 and are then subjected to mass analysis at a mass analysis region 23. Determination of the obtained mass spectrum is made as to the presence or not of a mass spectrum derived from the detection target substance, and a monitor 27 displays a result thereof. Thereby, the detection target substance attached to the authentication target 2 can be detected continuously in real time, promptly and with a less error rate.

Abstract: A radiotherapy treatment device comprising an image acquisition device, in particular a magnetic resonance device, an irradiation device comprising in particular a linear accelerator, and a patient positioning device having a patient positioning platform, wherein a movement device is provided for jointly moving the image acquisition device and the irradiation device between an irradiation position, in which a radiotherapeutic treatment of a patient located on the patient positioning platform is possible by means of the irradiation device, and an image acquisition position, in which an image acquisition of the patient located on the patient positioning platform is possible by means of the image acquisition device is provided. A radiotherapy method for treating an irradiation target in a patient by means of such a radiotherapy treatment device is also disclosed.

Abstract: An ion source is disclosed which utilizes independently powered electrodes that are isolated with a series of insulators. The ion source comprises an anode electrode with a hollow interior, where the anode is disposed between a cathode and an anti-cathode. A magnet or electro-magnet imposes a magnetic field in an axial direction through the bore of the anode. Gas is introduced into the anode area at a controllable pressure. The ion source includes a first voltage differential between the anode and cathode for the production of plasma and a second voltage differential between the anode and the anti-cathode for extraction of ions from the plasma, forming an ion beam, which is preferably of a narrow diameter at low beam energy. In particular, the voltage differential between the anti-cathode and anode is adjusted to control the initial beam divergence of extracted ions. An optional focus electrode with an independent power supply further focuses the ion beam.

Abstract: An asymmetric waveform pulse generator comprises a metallic oxide semiconductor field effect transistor (MOSFET) bridge circuit, which includes a plurality of MOSFETs for inverting high voltage DC voltage to asymmetric waveform pulses. The asymmetric waveform pulse generator further comprises a pulse-width modulating (PWM) circuit for generating PWM signals, and a plurality of isolation driving circuits corresponding to the plurality of MOSFETs, for controlling switching on/off of the plurality of MOSFETs in the MOSFET bridge circuit based on the PWM signals generated by the PWM circuit. Each of the isolation driving circuits comprises an isolation transformer for isolating the MOSFET bridge circuit from the PWM circuit. A FAIMS ion detector employing the asymmetric waveform pulse generator is also disclosed.

Abstract: Provided is a phase plate for use in an electron microscope which lessens the problem of image information loss caused by interruption of an electron beam and ameliorates the problem of anisotropic potential distributions. This phase plate comprises openings (23) connected into a single opening, and multiple electrodes (11) arranged in the opening from the outer portion of the opening towards the center of the opening. The cross sections of the electrodes (11) are configured such that a voltage application layer (24) comprising a conductor or a semiconductor is covered by a shield layer comprising a conductor or a semiconductor with an intermediate insulating layer. By this means, this phase plate is capable of lessening electron beam interruption due to the electrodes (11), and of ameliorating the problem of anisotropic potential distributions.

Abstract: A method for atom probe tomography (APT) sample preparation from a three-dimensional (3D) field effect transistor device formed within a semiconductor structure is provided. The method may include measuring a capacitance-voltage (C-V) characteristic for the 3D field effect transistor device and identifying, based on the measured capacitance-voltage (C-V) characteristic, a Fin structure corresponding to the 3D field effect transistor device. The identified Fin structure is detached from the 3D field effect transistor device using a nanomanipulator probe tip. The detached Fin is then welded to the nanomanipulator probe tip using an incident focused ion beam having a voltage of less than about 1000 eV. The incident focused ion beam having a voltage of less than about 1000 eV is applied to a tip of the Fin that is welded to the nanomanipulator probe tip. The tip of the Fin may then be sharpened by the focused ion beam.

Abstract: Provided is a charged particle beam apparatus adapted so that even when an additional device is not mounted in the charged particle beam apparatus, the apparatus rapidly removes, by neutralizing, a local charge developed on a region of a sample that has been irradiated with a charged particle beam. After charged particle beam irradiation for measurement of the sample, the apparatus controls a retarding voltage or/and an accelerating voltage at a stage previous to a next measurement, and then neutralizes an electric charge by reducing a difference between a value of the retarding voltage and that of the accelerating voltage to a value smaller than during the currently ongoing measurement. The charged particle beam achieves neutralizing without reducing throughput, since the local charge developed on the region of the sample that has been irradiated with the charged particle beam is removed, even without an additional device mounted in the apparatus.

Abstract: A charged particle beam apparatus includes a sample stage, a focused ion beam column, a scattered electron detector that detects backscattered electrons generated from a cross-section of a sample, a crystal orientation information generation unit that generates crystal orientation information on a predetermined region of the cross-section, and an angle calculation unit that calculates attachment angles of the sample stage, corresponding to a direction of the cross-section. In response to receiving input of information indicating that the crystal orientation information on the region displayed on a display unit is changed to aimed second crystal orientation information, the angle calculation unit calculates the attachment angles corresponding to the direction of the cross-section for generating the second crystal orientation information, and the focused ion beam column performs etching processing on the cross-section at the calculated attachment angles.

Abstract: A target supply device may include a reservoir configured to hold a target material in its interior in liquid form, a vibrating element configured to apply vibrations to the reservoir, a target sensor configured to detect droplets of the target material outputted from the reservoir, a control unit configured to set parameters based on a result of the detection performed by the target sensor, a function generator configured to generate an electrical signal having a waveform based on the parameters, and a power source configured to apply a driving voltage to the vibrating element in accordance with the electrical signal.