Abstract: An integrated circuit assembly has pads of a chip electrically connected to pads of a substrate with rolling metal balls. A pliable material bonds the balls in movable contact with pads of the chip and substrate. Because the balls are relatively free to move, thermal expansion differences that would ordinarily cause enormous stresses in the attached joints of the prior art, simply cause rolling of the balls of the present invention, avoiding thermal stress altogether. Reliability of the connections is substantially improved as compared with C4 solder bumps, and chips can be safely directly mounted to such substrates as PC boards, despite substantial thermal mismatch.

Abstract: A semiconductor device is provided with a semiconductor substrate and five electrode pads disposed on the semiconductor substrate. Four of the electrode pads form a rectangle, and the remaining one electrode pad is disposed on the substantial center of the rectangle. The semiconductor device is also provided with a plurality of semiconductor elements disposed between the electrode pads. The semiconductor elements are connected to any of the five electrode pads and used for measuring characteristics.

Abstract: A semiconductor device which does not require solder resist to be applied to the surface. Leads 54 are formed on one surface of a polyimide film 10, external connection terminals 11 are formed on the leads 54 to project from the other surface of the polyimide film 10 through via holes 30, and an IC chip 15 is adhered to the first surface, so that the leads 54 are covered by the IC chip 15, and the application of a solder resist can be omitted.

Abstract: A semiconductor device including a die pattern for mounting a semiconductor chip thereon using an adhesive, and connection electrodes connected with each electrode of the semiconductor chip by bonding wires, wherein the die pattern and connection electrodes are provided on one surface of the circuit board, a wiring pattern electrically connected with the die pattern or the connection electrodes by way of through-holes, and a plurality of solder bumps electrically connected with the wiring pattern, wherein the wiring pattern facing the semiconductor chip is formed on substantially an entire surface of a predetermined region which is larger than the outer dimensions of the semiconductor chip and extends to the entire periphery of the semiconductor chip.

Abstract: The present invention relates to a chip package and to methods of testing a chip package wherein contact to chip leads is made by a configuration of testing probes in such a manner so as to allow for shorter, tighter-pitch, and more robust chip leads that will not short out into neighboring adjacent chip leads. The present invention also relates to a chip package wherein the terminal ends of the chip leads are constrained in a dielectric medium such that package testing may be carried out before final sizing of chip lead lengths.

Abstract: An interconnected apparatus for producing a low loss, reproducible electrical interconnection between a semiconductor device and a substrate includes a rod and rod receptor. The rod, generally cylindrically shaped, is attached to the semiconductor device and includes an outer circumferential wall which comes into contact with the rod receptor during a bonding process. A lip portion is formed on one end of the rod receptor for interlocking engagement with the rod. The rod receptor is plated on the substrate and includes a generally circularly shaped body which forms a centrally disposed well for receiving the rod. A lip portion is formed on one end or mouth of the rod receptor for interlocking engagement with the rod. When the rod and corresponding receptor are aligned and brought together, the rod deforms and interlocks with its corresponding rod receptor. A thermo-compression bonding process is utilized to bond the rod to the rod receptor, thereby producing a strong interlocking bond.

Abstract: A semiconductor chip package structure for providing a reliable interface between a semiconductor chip and a PWB to accommodate for the thermal coefficient of expansion mismatch therebetween. The interface between a chip and a PWB is comprised of a package substrate having a plurality of compliant pads defining channels therebetween. The package substrate is typically comprised of a flexible dielectric sheet that has leads and terminals on at least one surface thereof. The pads have a first coefficient of thermal expansion (“CTE”) and are comprised of a material having a fairly low modulus of elasticity. An encapsulant having a second CTE lower than the CTE of the compliant pads is disposed within the channels to form a uniform encapsulation layer. The pads are in rough alignment with the conductive terminals on the package substrate thereby allowing independent movement of the terminals during thermal cycling of the chip.

Abstract: A silicon wafer is etched to form a first and second series of guidance features. The features of the first series are larger than and surround the features of the second series. The second series is clustered into groups and a hole is formed in the center of each group. The wafer is designed to integrate a silicon package having preformed contacts with a plurality of silicon-based chips. The package and each chip has a series of guidance recesses which correspond to the guidance features of the first and second series, respectively. One chip is placed on top of each group of the second series, and the package is placed on top of the first series. The recesses in the package and chips will precisely align with and slidingly engage the upper ends of the features. Since the features of the first series are larger than those of the second series, there is a clearance between the package and the chips.

Abstract: A semiconductor device in which defective resin filling can be prevented. One embodiment has a metal heat-releasing plate (103) with good thermal conductivity, which is sealed within a resin portion (107). An inner lead (101) is attached to the heat-releasing plate (103) and is at the same time provided with a bent portion. The heat-releasing plate (103) is located at the center of the resin portion (107) in its thickness-wise direction. The above arrangement roughly equalizes the spaces above and under the heat-releasing plate (103), thereby improving the resin filling performance to enable fabrication of a semiconductor device without causing defective resin filling such as an unfilled portion.

Abstract: The semiconductor device includes a semiconductor chip, an FPC tape for mounting the semiconductor chip thereto, a mold resin for protecting the semiconductor chip, and metal balls provided on the FPC tape for connecting the semiconductor chip to a circuit board. The mold resin has the glass transition temperature not lower than 200.degree. C., the coefficient of linear expansion in the range from 13 to 18 ppm/.degree. C., and Young's modulus in the range from 1500 to 3000 kg/mm.sup.2, whereby warpage of the semiconductor device is mitigated. The semiconductor device can also include a buffer layer. The semiconductor device can be manufactured by collectively molding a plurality of semiconductor chips mounted to the FPC tape and by cutting the molded article into individual semiconductor packages.

Abstract: A stacked structure of a semiconductor package mainly comprises a first chip, a second chip, a substrate and a lead frame. The first chip and the second chip are attached on the surface of the substrate by a plurality of solder bumps by means of flipchip bonding. Then, the first chip, the second chip and the substrate form a stacked structure. A plurality of plugs of the substrate is provided along an edge of the substrate so as to attach to a plurality of receptacles of the lead frame to form a semiconductor device. The plugs are attached to the receptacles of the lead frame by silver paste to form a semiconductor device in such a way that the first chip and the second chip electrically connect to the lead frame. In addition, the lead frame is bent to form a plurality of fingers, which is placed in a space that is formed by a sidewall of the chip and a surface of the substrate while it is assembled.

Abstract: A heatsink mounted to an electronic device having an area substantially greater than that of the device includes a heatpipe in the heatsink for transferring heat within the heatsink to reduce thermal gradients therein.

Abstract: A method for use in the fabrication of semiconductor devices includes forming a titanium nitride film and depositing a silicon hard mask over the titanium nitride film. The silicon hard mask is used to pattern a titanium nitride interconnect from the titanium nitride film and the silicon hard mask is also used as a contact etch stop for forming a contact area. In forming the interconnect, the silicon hard mask is dry etched stopping selectively on and exposing portions of the titanium nitride film and the exposed portions of the titanium nitride film are etched resulting in the titanium nitride interconnect. In using the silicon hard mask as a contact etch stop, an insulating layer is deposited over the silicon hard mask and the insulating layer is etched using the silicon hard mask as an etch stop to form the contact area. The silicon hard mask is then converted to a metal silicide contact area. Interconnects formed using the method are also described.

Abstract: A semiconductor chip assembly with a compliant layer overlying the chip and a flexible dielectric layer overlying the compliant layer. Connecting terminals are provided on the dielectric layer for connection to a larger substrate. The connecting terminals are moveable in vertical directions toward the chip. Bonding terminals, electrically connected to the connecting terminals, are also provided on the top layer. A reinforcing element resists vertical movement of the bonding terminals, and thereby facilitates connection of leads between the bonding terminals and the chip.

Abstract: A high melting point metal wiring layer, a second aluminum wiring layer, and a third aluminum wiring layer are stacked on transistors forming an inverter train of a hierarchical power supply structure respectively. The high melting point metal wiring layer is employed as a local wire for connecting the transistors with each other, the second aluminum wiring layer is employed as a local bus wire and a hierarchical power supply wire, and the third aluminum wiring layer is employed as a main bus wire and a power supply wire to intersect with the respective wires. Consequently, the wiring layers are easy to lay out, while no main bus region is required dissimilarly to the prior art and it is possible to reduce the layout area.

Abstract: A method for manufacturing a semiconductor structure having a via hole is provided. The method includes steps of providing a base, forming a pad on the base, forming a device on the pad, forming a dielectric layer over the device and the base, executing a planarization process with etch back, and etching the dielectric layer to form the via hole. The manufactured semiconductor structure has a dielectric layer having therein the via hole, a device under the dielectrc layer, and a pad under the device for raising the device. The method and structure can prevent a residue due to planarization process from being remained between the dielectric layer and the device.

Abstract: An object of the present invention is to provide a semiconductor device where a metal wiring pattern is improved in order to prevent photoresist foaming from occurring without employing a special process, even if a protective layer void occur in a wire to wire space in the metal wire, and an arrangement method for a semiconductor device pattern. To achieve the above object, the present invention provides a semiconductor device comprising a first wiring layer and a second wiring layer arranged in a row on a semiconductor substrate, and a insulating layer on the first wiring layer and the second wiring layer so that a first portion of the insulating layer on the first wiring layer is prevented from touching a second portion of the insulating layer on the second wiring layer.

Abstract: The invention relates to a solder bump of an inhomogeneous material compoion for connecting contact pad metallizations of different electronic components or substrates in flip-chip technology, as well as to a method of making such a solder bump. A solder bump consists of a space defining high-melting solder bump core and a layer of a preferably low-melting solder material deposited thereon. The preconditions required for soldering, such as solder deposition, bump height and soldering temperature are thus all combined in the solder bump.

Abstract: Disclosed are a lead frame for a semiconductor device, and a semiconductor device using the lead frame. Inner leads and outer leads of the lead frame are formed to have such a sectional structure that a film of Pd or a Pd alloy is formed on both surfaces or a rear surface of a lead frame directly or through an undercoat, and an Au-plated film is formed on a part of the film of Pd or a Pd alloy. Pd and Au are not applied to unnecessary areas, thus resulting in higher economical and production efficiency. The lead frame has good quality, is economical and has superior productivity. Wires connecting a semiconductor chip and the inner leads have a good connection property and joint portions of the outer leads to an external device also have a good connection property.

Abstract: A chip-scale semiconductor package mainly includes a semiconductor chip, a substrate and a package body. Said chip is attached onto said substrate by an adhesive layer. Said chip has a plurality of bonding pads formed thereon. Said adhesive layer has an aperture corresponding to the bonding pads of said chip such that the bonding pads can be exposed within an aperture. Said substrate has several through-holes respectively corresponding to the bonding pads of said chip and parts of the area around the edge of said chip for dispensing of encapsulant after the soldering of leads of said substrate to the bonding pads of said chip. The encapsulant dispensed into the through-holes can flow from the surface of said chip to the edge thereof. Said package body has one portion provided within the through-hole of said substrate and another portion provided around the edge of said chip whereby encapsulation process is accomplished without having to turn the whole semiconductor package device.