Abstract: Disclosed is an RF switch device and, more particularly, an RF switch device that reduces or eliminates a voltage imbalance by implementing at least one stage in a stacked switch device with a different width, and thus the voltage applied to each stage in the OFF state may be more equally distributed among the individual stages.

Abstract: A method for validating operation of a driver integrated circuit includes providing a signal using an output node. The signal is provided using multiple set points in response to a change in state of an input signal. Each set point corresponds to a different phase of a multi-phase transition of the signal. The method includes providing a timer value at an end of a phase of the multi-phase transition and determining whether the signal is in a target signal range of the phase based on the timer value at the end of the phase, a predetermined value defining the target signal range of the phase, and a predetermined time limit for the phase. A current through the output node may be provided using the multiple set points, and a voltage on the output node may have the multi-phase transition.

Abstract: The present disclosure provides designs and techniques to improve turn “off” times of a bootstrapped switch, maximizing the total “on” time of the bootstrapped switch. The techniques described herein provide a protection device coupled to the bootstrapped switch. The protection device may be controlled by an input voltage to the bootstrapped switch during a boosting phase and may be controlled by a constant voltage during a non-boosting phase. The techniques for reducing turn “off” times are particularly useful in high-speed applications, such as high-speed, low-voltage analog-to-digital converters.

Abstract: A circuit to multiplex supply voltages may include a set of chains of transistors. Each chain of transistors may correspond to a voltage supply that is desired to be multiplexed and may include a set of transistors coupled in series. A first end terminal of each chain of transistors may be coupled to a corresponding voltage supply, and a second end terminal of each chain of transistors may be coupled to an output terminal of the circuit. A given supply voltage may be selected by turning on transistors in a chain of transistors that corresponds to the given supply voltage and turning off transistors in other chains of transistors.

Abstract: A relay circuit may include a solid state relay switch, coupled to an external voltage line and to an charging capacitor; and a solid state relay control circuit, coupled between the charging capacitor and the solid state relay switch. The solid state relay control circuit may be arranged to: turn the solid state relay switch to an OFF state when a capacitor voltage of the charging capacitor falls below a low threshold value; and change the solid state relay switch from the OFF state to an ON state when the capacitor voltage increases above a high threshold value.

Abstract: A circuit device includes a control circuit configured to control a transistor current based on a detected temperature. The detected temperature is a temperature detected by a temperature sensor circuit that detects a temperature of a transistor. The transistor charges a load to which a power supply voltage is supplied. The transistor current is a current flowing through the transistor during charging. The control circuit reduces the transistor current when the detected temperature is higher than a first threshold value, and increases the transistor current when the detected temperature is lower than a second threshold value lower than the first threshold value.

Abstract: A circuit comprises first and second input supply nodes configured to receive a supply voltage therebetween. The circuit comprises a high-side driver circuit configured to be coupled to a high-side switch and produce a first signal between first and second high-side output nodes. The circuit comprises a low-side driver circuit configured to be coupled to a low-side switch and produce a second signal between first and second low-side output nodes. The circuit comprises a floating node configured to receive a floating voltage applied between the floating node and the second high-side output node, a bootstrap diode between the first input supply node and an intermediate node, and a current limiter circuit between the intermediate node and the floating node and configured to sense the floating voltage and counter a current flow from the intermediate node to the floating node as a result of the floating voltage reaching a threshold value.

Abstract: Various examples are provided related to supercascode power switches that can be used in, e.g., HV and MV applications. This disclosure introduces a cascaded supercascode (CSC) power switch which can include a series of unit supercascode (USC) circuits; a control switch coupled in series with the series of USC circuits; and an external balancing network coupled to each of the n USC circuits. The series has a plurality of USC circuits, with each of the USC circuits including first and second switches coupled in series and an internal balancing network coupled across the first and second switches. A source of each of the USC circuits is a source of the first switch. The internal balancing network can include a capacitor connected between a gate of the second switch and the source of the first switch and a diode connected in parallel with the capacitor.

Abstract: A comparator circuit configured to output an output voltage at a first logic level, upon an input voltage exceeding a first threshold voltage, and output the output voltage at a second logic level, upon the input voltage dropping below a second threshold voltage lower than the first threshold voltage. The comparator circuit includes a converter circuit configured to convert the input voltage of the comparator circuit into a first voltage and a second voltage lower than the first voltage, and a logic circuit configured to output a voltage, as the output voltage of the comparator circuit, that is at the first logic level, upon the first voltage exceeding a third threshold voltage, and at the second logic level, upon the second voltage dropping below a fourth threshold voltage lower than the third threshold voltage.

Abstract: A method includes: forming first, second, and third NWs; forming form first to fourth transistors in corresponding first to fourth groups of active regions, connecting selected transistors amongst the first and second transistors to form first and second input circuits respectively receiving a first input signal in a first domain and a second input signal in the first domain; connecting selected transistors amongst the first and third transistors and amongst the first and fourth transistors to respectively form a first single bit level shifter (SBLS) and a second SBLS; each SBLS operates in the second domain and receives correspondingly versions of the first and second input signals; and connecting selected transistors amongst the first and third transistors to form a control circuit for toggling the first and second SBLSs between a normal and a standby state, a portion of the control circuit and the first SBLS sharing the second NW.

Abstract: RF transistors manufactured using a bulk CMOS process exhibit non-linear drain-body and source-body capacitances which degrade the linearity performance of the RF circuits implementing such transistors. The disclosed methods and devices address this issue and provide solutions based on implementing two or more bias voltages in accordance with the states of the transistors. Various exemplary RF circuits benefiting from the described methods and devices are also presented.

Abstract: An apparatus includes a comparator. The comparator includes first and second pregain stages, and a switch network coupled to the first and second pregain stages. A plurality of switches in the switch network are operable to provide a feedback path around at least one of the first and second pregain stages. The comparator further includes a latch coupled to the second pregain stage.

Abstract: An acoustic wave device includes a piezoelectric substrate, functional elements, an outer peripheral support layer, a cover portion, and a protective layer covering the cover portion. A hollow space is defined by the piezoelectric substrate, the outer peripheral support layer, and the cover portion, and the functional elements are disposed in the hollow space. The acoustic wave device further includes an under bump metal layer, a wiring pattern, and a through-electrode that connects these elements. In the protective layer, a through-hole to be filled with a conductor to electrically connect a solder ball and the under bump metal layer is provided. The outer peripheral support layer includes a protruding portion protruding to the hollow space. When the acoustic wave device is seen in plan view, at least a portion of the through-hole overlaps the hollow space, and an end portion of the protruding portion overlaps an inner region of the through-hole.

Abstract: A drive circuit configured to drive a load. The drive circuit comprises a transformer. The transformer comprises a transformer primary comprising one or more primary windings connected to arms that pass through a magnetic material. The transformer also comprises a transformer secondary comprising secondary windings connected to planar secondary conductors which pass through the inside of the arms. The drive circuit also comprises a voltage source configured to apply a voltage across the transformer primary.

Abstract: System and methods for reducing nonlinearity in radio frequency (RF) circuitries (e.g., RF switch circuitry and/or RF amplifier circuitry) are provided. A high-linearity RF integrated circuit device includes an input port; an output port; nonlinear circuitry arranged on a signal path between the input port and the output port; a shunt path including signal adjustment circuitry; and adjustable nonlinearity generation circuitry coupled to the signal adjustment circuitry, the adjustable nonlinearity generation circuitry including one or more metal-oxide-semiconductor (MOS) devices; and at least one nonlinearity generation activation element connected in parallel with a source terminal and a drain terminal of a first MOS device of the one or more MOS devices and responsive to an activation control signal. The nonlinear circuitry may include at least one of switching circuitry or amplifier circuitry. The shunt path may be coupled to the input port or the output port.

Abstract: The present invention relates to a new type of current driving circuit, which has high linearity during low current driving, comprising: a voltage-current conversion unit for converting an input voltage into a current; a digital analog converter (DAC) connected to an output terminal of the voltage-current conversion unit and for generating and outputting a voltage corresponding to an applied digital code; a field effect transistor having a first electrode connected to a load and a second electrode connected to a node connected to a resistor, and for allowing a current to flow to the load in response to a voltage applied to a gate; an amplifier for receiving the voltage output from the digital analog converter and a voltage generated by the resistor, generating a voltage for controlling such that a current flows from the field effect transistor, and applying same to the gate; a current supply source for supplying to the first electrode a current required for operating the field effect transistor in a saturatio

Abstract: An apparatus, including a first circuit which contains a first load which does not draw current from a first battery when not operating, and includes an electric motor of an electric vehicle or hybrid vehicle; a second circuit which contains a second load which draws current from a second battery when the first load is not operating or is non-operational; a first switch which is capable of disconnecting the first battery from the first circuit; a second switch which is capable of connecting the first battery to the first circuit; and at least one recharger which is capable of recharging the first battery and the second battery when the first load is operating. The apparatus is capable of providing electrical power to the second load when the at least one recharger ceases to operate or becomes non-operational. The first load is an eaxle.

Abstract: A semiconductor integrated circuit includes a first oscillator configured to generate a first signal with a first frequency based on a control signal and output the first signal to a path. The semiconductor integrated circuit includes a control signal generation circuit operatively coupled to the first oscillator via the path, and configured to receive the first signal from the first oscillator via the path and generate the control signal. The semiconductor integrated circuit includes a second oscillator configured to generate a second signal with a second frequency based on the control signal and output the second signal to an output terminal outside the path.

Abstract: An apparatus includes a comparator. The comparator includes a plurality of pregain stages, and a switch network coupled to the plurality of pregain stages. The comparator further includes a latch coupled to the plurality of pregain stages.

Abstract: A voltage power switch includes circuitry configured to output a known voltage. The voltage power switch includes a lock circuit configured to output a known state and a voltage level shifter configured to receive an input, the input being based on the known state output by the lock circuit. The voltage power switch, using an output circuit, is configured to output a known voltage level based on an output of the voltage level shifter, wherein the known voltage is one of a high voltage VHI for a fuse programing period or a first non-zero intermediate voltage VMID1 for a non-fuse programming period.