Abstract: Provided herein are apparatus and methods for a multi-stage signal-processing circuit. The signal-processing circuit can include multiple configurable stages that can be cascaded and configured to process an input signal. Control circuitry can be used to select an output of the configurable stages. Serial data can be recovered with good signal integrity using a signal monitor with the configurable stages by virtually placing the signal monitor on a buffered output node.

Abstract: A single servo control loop for amplifier gain control based on signal power change over time or system to system, having an amplifier configured to receive an input signal on an amplifier input and generate an amplified signal on an amplifier output. The differential signal generator processes the amplified signal to generate differential output signals. The single servo control loop processes the differential output signal to generates one or more gain control signals and one or more current sink control signals. A gain control system receives a gain control signal and, responsive thereto, controls a gain of one or more amplifiers. A current sink receives a current sink control signal and, responsive thereto, draws current away from the amplifier input. Changes in input power ranges generate changes in the integration level of the differential signal outputs which are detected by the control loop, and responsive thereto, the control loop dynamically adjusts the control signals.

Abstract: An embodiment is a method including forming a first interconnect structure over a first substrate, the first interconnect structure comprising dielectric layers and metallization patterns therein, patterning the first interconnect structure to form a first opening, coating the first opening with a barrier layer, etching a second opening through the barrier layer and the exposed portion of the first substrate, depositing a liner in the first opening and the second opening, filling the first opening and the second opening with a conductive material, and thinning the first substrate to expose a portion of the conductive material in the second opening, the conductive material extending through the first interconnect structure and the first substrate forming a through substrate via.

Abstract: Methods and system for flip chip alignment for substrate and leadframe applications are disclosed and may include placing a semiconductor die on bond fingers of a metal leadframe, wherein at least two of the bond fingers comprise one or more recessed self-alignment features. A reflow process may be performed on the semiconductor die and leadframe, thereby melting solder bumps on the semiconductor die such that a solder bump may be pulled into each of the recessed self-alignment features and aligning the solder bumps on the semiconductor die to the bond fingers. The recessed self-alignment features may be formed utilizing a chemical etch process or a stamping process. A surface of the recessed self-alignment features or the bond fingers of the metal leadframe may be roughened. A solder paste may be formed in the recessed self-alignment features prior to placing the semiconductor die on the bond fingers of the metal leadframe.

Abstract: A method, apparatus and computer program is described comprising: determining an absolute gain of a power amplifier over time, wherein the absolute gain is formed from the division of a feedback baseband signal derived (e.g. by demodulating an RF signal) from an output of the power amplifier, by a forward baseband signal that is used to form an input of the power amplifier; determining a relative gain transient response (GTR) of the power amplifier, by normalising the absolute gain to generate a relative gain of the power amplifier over time; and determining a transient response compensation value having inverse characteristics to the relative gain transient response.

Abstract: A power amplifier arrangement (200) for amplifying an input signal to produce an output signal comprises a plurality N of amplifier sections (212, 213), a first input transmission line (221) comprising multiple segments and a first output transmission line (231) comprising multiple segments. Each amplifier section comprises one or more first transistors (T1) distributed along the first input transmission line (221) and the first output transmission line (231). Each amplifier section is configured to amplify a portion of the input signal to produce a portion of the output signal. A portion of the input signal is one of N portions of the input signal partitioned on any one or a combination of an amplitude basis and a time basis. The output signal is produced at an end of the first output transmission line (231) by building up N potions of the output signal from each amplifier section.

Abstract: A power amplifier circuit includes a first transistor that amplifies a first signal and outputs a second signal; a second transistor that amplifies the second signal and outputs a third signal; a bias circuit that supplies a bias current to a base of the second transistor; and a bias adjustment circuit that adjusts the bias current by subjecting the first signal to detection. The bias adjustment circuit controls the bias current such that a first current extracted from the bias circuit depends on a magnitude of the first signal.

Abstract: A semiconductor package includes a first sub-package and a second sub-package. The first sub-package is stacked atop the second sub-package. Each of the first sub-package and the second sub-package includes at least two first semiconductor dies, a second semiconductor die, a plurality of molding pieces, a bond-pad layer, a plurality of redistribution layers (RDLs) and a plurality of bumps. The bumps of the first sub-package are attached to the bond-pad layer of the second sub-package.

Abstract: A method of forming a semiconductor structure includes following steps. A first substrate and a second substrate are bonded together, in which the first substrate has a landing pad. The second substrate is etched to form an opening, in which the landing pad is exposed through the opening. A metal layer is formed over the landing pad and a sidewall of the second substrate that surrounds the opening. A buffer structure is formed over the metal layer. The buffer structure is etched such that a top surface of the buffer structure is below a top surface of the metal layer. A barrier structure is formed over metal layer and the buffer structure.

Abstract: A substrate bonding apparatus includes a substrate susceptor to support a first substrate, a substrate holder over the substrate susceptor to hold a second substrate, the substrate holder including a plurality of independently moveable holding fingers, and a chamber housing to accommodate the substrate susceptor and the substrate holder.

Abstract: An amplifier system with high gain, compact size, and extended bandwidth is disclosed. The amplifier system includes one or more inputs configured to receive one or more input signals and a pre-driver configured to receive the one or more input signals. The pre-driver may comprise source connected FETs which create a virtual ground and may include inductors which cancel or counter parasitic capacitance of the FETs. The pre-driver amplifies the one or more input signals to create one or more pre-amplified signals, which are provided to a voltage divider network configured to reduce a DC bias voltage of the one or more pre-amplified signals, while maintaining a wide bandwidth range. An amplifier receives and amplifies the output of the voltage divider network to create amplified signals. The amplifier may comprise mirrored FET pairs in a common source configuration and a common gate arrangement.

Abstract: An organic light emitting display apparatus includes a plurality of pixels, each of the pixels including first mirror pattern having an opening, and first to third sub pixels. The first sub pixels includes a first light emitting structure and is positioned to emit first color light through the opening, the second sub pixel includes a second light emitting structure positioned to emit second color light through the opening, and the third sub pixel includes a third light emitting structure positioned to emit third color light through the opening.

Abstract: Described are concepts, circuits, systems and techniques directed toward N-phase control techniques useful in the design and control of supply generators configured for use in a wide variety of power management applications including, but not limited to mobile applications.

Abstract: A semiconductor device includes a stacked structure on a substrate. The stacked structure includes stepped regions and a central region between the stepped regions, an upper insulation layer on the stacked structure, and a capping insulation layer on the stepped regions of the stacked structure. The capping insulation layer includes a first upper end portion and a second upper end portion that are adjacent to the upper insulation layer. The upper insulation layer is between the first upper end portion and the second upper end portion. The first upper end portion and the second upper end portion extends a first height relative to the substrate that is different from a second height relative to the substrate of the second upper end portion.

Abstract: A notch circuit and a power amplifier module capable of reducing self-interference in a transceiver are provided. The transceiver includes a transmitter and a receiver, and the transmitter causes self-interference to the receiver. The transmitter includes a power amplifier module and the power amplifier module includes a notch circuit and a power amplifier. The notch circuit includes an inductor and a capacitor. The power amplifier amplifies an input transmission signal to generate an output transmission signal. The inductor receives a supply voltage. An amplitude of the supply voltage varies with the first input transmission signal. The capacitor is electrically connected to the inductor. The first output transmission signal (Tx_out1) is attenuated when a modulated frequency of the supply voltage is corresponding to a stopband.

Abstract: Disclosed is an operational amplifier based on a metal-oxide TFT. The operational amplifier includes an auxiliary amplifier and a bootstrap gain-increasing amplifier. The auxiliary amplifier adopts a two-stage positive feedback structure, including a fifth transistor, a seventh transistor, an eleventh transistor, a first amplifying unit, and a second amplifying unit. A gate of the fifth transistor serves as an input end of the operational amplifier. The bootstrap gain-increasing amplifier includes two second circuits in mutual symmetry. Each of the second circuits includes a first transistor, a second transistor, and a current source unit with a bootstrap structure.

Abstract: An integrated circuit (IC) package with an embedded heat spreader in a redistribution layer (RDL) is provided. IC packaging facilitates a high density package for ICs, including monolithic microwave integrated circuits (MMICs). However, IC packaging may result in reduced heat removal from an IC, decreasing radio frequency (RF) circuit performance. In an exemplary aspect, an IC package is provided which incorporates an embedded heat spreader within a dielectric layer of an RDL coupled to an IC die. The embedded heat spreader provides efficient heat transfer, robust RF performance, and operation through millimeter wave (mmW) frequencies, all in a miniature low-cost, low-profile surface mountable (SM) package.

Abstract: A digitally controlled variable gain amplifier (VGA) for generating amplification output levels is disclosed. In one aspect, the digitally controlled VGA includes a positive amplification stage including at least two positive amplifiers, and a corresponding negative amplification stage coupled to the positive amplification stage. The negative amplification stage includes at least two negative amplifiers. The positive amplification stage and the corresponding negative amplification stage are digitally controlled by one or more digital codes. The corresponding negative amplification stage is coupled in parallel with the positive amplification stage and is equally weighted as the positive amplification stage, and both the positive amplification stage and the corresponding negative amplification stage selectively contribute to the generation of the amplification output levels for the digitally controlled VGA.

Abstract: A high-efficiency amplifier is configured so that short stubs are provided in a line between a first substrate end and a second substrate end of a substrate, and among the short stubs, short stubs provided at locations other than both ends of the line include two short stubs and which are adjacent to each other, and which are provided at locations at which the two short stubs are to be electromagnetically coupled to each other.

Abstract: A power amplifier apparatus includes a semiconductor substrate, a plurality of first transistors on the semiconductor substrate, a plurality of second transistors, at least one collector terminal electrically connected to collectors of the plurality of first transistors, a first inductor having a first end electrically connected to the collector terminal and a second end electrically connected to a power supply potential, at least one emitter terminal electrically connected to emitters of the plurality of second transistors and adjacent to the collector terminal in a second direction, a second inductor having a first end electrically connected to the emitter terminal and a second end electrically connected to a reference potential, and at least one capacitor having a first end electrically connected to the collectors of the plurality of first transistors and a second end electrically connected to the emitters of the plurality of second transistors.