Abstract: An RF transceiver front end includes a receiver limb including a length of transmission line, an impedance matching network, a downstream shunt switch and a downstream further receiver component and a transmitter limb. The impedance matching network is configured to transform the input impedance of the further receiver component to match the input impedance of the receiver limb when the shunt switch is open and the RF transceiver front end is operable in receiver mode. The impedance matching network is further configured to transform the input impedance of the shunt switch to present an open circuit as the input impedance of the receiver limb when the shunt switch is closed and the RF transceiver front end is operable in transmitter mode. The length of transmission line can be from zero to less than ?/4 at the operating frequency of the RF transceiver.

Abstract: Some embodiments relate to an integrated chip that includes a first source/drain region and a second source/drain region disposed in a substrate. A plane that is substantially perpendicular to an upper surface of the substrate traverses the first source/drain region and the second source/drain region. Agate electrode extends over a channel region in the substrate between the first source/drain region and the second source/drain region. The gate electrode is separated from the channel region by way of a charge trapping dielectric structure. The charge trapping dielectric structure includes a tunnel dielectric layer, a charge trapping dielectric layer over the tunnel dielectric layer, and a blocking dielectric layer over the charge trapping dielectric layer. The channel region has a channel width measured perpendicularly to the plane, and the tunnel dielectric layer has different thicknesses at different respective points along the channel width.

Abstract: A circuit is disclosed, in accordance with some embodiments. The circuit includes a transistor stage, a resistive element, a first tunable capacitive element and a second tunable capacitive element. The transistor stage includes a first input/output terminal and a second input/output terminal. The resistive element is connected to the transistor stage. The first tunable capacitive element is connected in parallel with the resistive element. The second tunable capacitive element is connected to the second input/output terminal of the transistor stage.

Abstract: Embodiments herein relate to integrating FIVR switching circuitry into a substrate that has a first side and a second side opposite the first side, where the first side of the substrate to electrically couple with a die and to provide voltage to the die and the second side of the substrate is to couple with an input voltage source. In embodiments, the FIVR switching circuitry may be printed onto the substrate using OFET, CNT, or other transistor technology, or may be included in a separate die that is incorporated within the substrate.

Abstract: In an embodiment a composite semiconductor component includes a carrier substrate having a plurality of projecting elements projecting from a first main surface of the carrier substrate, an electrically conductive material electrically conductively connected to a contact region of the carrier substrate and located on at least one of the projecting elements, some of the projecting elements not being covered with the electrically conductive material and a semiconductor chip arranged on the carrier substrate and having at a first surface at least one contact pad electrically connected to the electrically conductive material on at least one element, wherein, at a position at which the contact pad and the electrically conductive material on the projecting element are in each case in contact with one another, the contact pad has a larger lateral extent than the projecting element in each case.

Abstract: A transconductance amplifier (TCA) implemented with high electron mobility transistors (HEMTs) in a push-pull amplifier output stage provides a voltage controlled constant high output current to loads ranging from 10 m? to 1? with a bandwidth of 25 MHz. A driving stage for the HEMTs is implemented with variable gain amplifiers that amplify the input voltage signal and provide bias for the HEMTs. An automatic gain control may be connected between the TCA output and the variable gain amplifiers to ensure a constant current output for a varying load.

Abstract: A circuit includes an operational amplifier and a resistor network coupled to an output of the operational amplifier. The resistor network includes a first set of resistors coupled between the output of the operational amplifier and a first node of the resistor network, wherein the resistors of the first set are electrically connected in series with each other, a second set of resistors coupled between the first node and a second node of the resistor network, wherein the resistors of the second set are electrically connected in series with each other and include a first number of resistors, a third set of resistors coupled between the second node and a third node of the resistor network, wherein the third node is coupled to a first voltage, and wherein the resistors of the third set are electrically connected in parallel with each other and include a second number of resistors, and a resistor coupled between the first node and the second node and arranged in parallel with the second set of resistors.

Abstract: An integrated circuit (IC) includes semiconductor substrate with a metal stack including a lower, upper and a top metal layer that includes bond pads and a detection bond pad (DBP). A wirebond damage detector (WDD) includes the DBP over a first and second connected structure. The first and second connected structures both include spaced apart top segments of the upper metal layer coupled to spaced apart bottom segments of the lower metal layer. The DBP is coupled to one end of the first connected structure, and ?1 metal trace is coupled to another end extending beyond the DBP to a first test pad. The second connected structure includes metal traces coupled to respective ends each extending beyond the DBP to a second test pad and to a third test pad.

Abstract: An embodiment of a dual-path amplifier includes a power splitter connected to first and second power amplifiers respectively connected to first and second transmission lines connected to a power combiner having a phase-offset deficit at the second harmonic frequency 2f0, where the first and second transmission lines are designed to provide a complementary phase offset at 2f0 substantially equal to the phase-offset deficit such that the two amplified signals will be combined at the power converter with a total phase offset at 2f0 of about 180 degrees in order to reduce harmonic distortion in the amplified output signal, without substantially diminishing the output power at the fundamental frequency f0. In certain PCB-based implementations, the transmission lines include metal traces and lumped elements providing different impedance transformations that achieve the complementary phase offset, where the metal traces may have significantly different physical and electrical characteristics.

Abstract: A dc coupled amplifier includes a pre-driver, and amplifier and a bias control circuit. The pre-driver is configured to receive one or more input signals and amplify the one or more input signals to create one or more pre-amplified signals. The amplifier has cascode configured transistors configured to receive and amplify the one or more pre-amplified signals to create one or more amplified signals, the amplifier further having an output driver termination element. The bias control circuit is connected between the pre-driver and the amplifier, the bias control circuit receiving at least one bias current from the output driver termination element of the amplifier, wherein the pre-driver, the amplifier and the bias control circuit are all formed on a same die.

Abstract: A conductive structure, includes: a plurality of conductive layers; a plurality of conductive pillars being formed on the plurality of conductive layers, respectively; and a molding compound laterally coating the plurality of conductive pillars. Each of the plurality of conductive pillars is a taper-shaped conductive pillar, and is tapered from the conductive layers.

Abstract: Embodiments of 3D memory devices and methods for forming the same are disclosed. In an example, a 3D memory device includes a substrate, a peripheral circuit on the substrate, a memory stack including interleaved conductive layers and dielectric layers above the peripheral circuit, a first semiconductor layer above the memory stack, a second semiconductor layer above and in contact with the first semiconductor layer, a plurality of channel structures each extending vertically through the memory stack and the first semiconductor layer, and an insulating structure extending vertically through the memory stack, the first semiconductor layer, and the second semiconductor layer.

Abstract: An amplifier includes: a signal polarity inversion circuit which modulates an input signal and outputs a modulation signal; an amplifier circuit which is constituted from an operational transconductance amplifier (OTA) to amplify the modulation signal and output a current; and a sample-hold circuit having a sampling capacitor which is charged and discharged by selective sampling of the output current of the amplifier circuit and a holding capacitor to which the voltage of the sampling capacitor is transferred.

Abstract: Disclosed is a method for fabricating a semiconductor package. A mold press with upper and lower chases is used. A molded underfill (MUF) material is dispensed on a bottom surface of a mold cavity to form a first dispensed pattern with a serpentine shape. A base substrate on which die stacks are mounted is loaded on the upper chase. The mold cavity in which the die stacks are inserted is closed and MUF material flows between the die stacks to impregnate the die stacks.

Abstract: In at least one embodiment, a differential amplifier including first and second current transfer systems, a current difference producing system, and a feedback network circuit is provided. The first current transfer system generates a first differential current signal. The second current transfer system generates a second differential current signal. The current difference producing system receives the first differential current signal and the second differential current signal and generates a voltage difference signal that is indicative of a difference between a first current signal and a second current signal. The feedback network circuit converts the voltage difference signal into at least two converted current signals and provides the at least two converted current signals to one of the first and second current transfer systems or the current difference producing system to minimize the difference between the first current signal and the second current signal.

Abstract: Provided is an amplifier that includes a first transistor including a gate terminal to which an applied input signal is input, where a current depending on the applied input signal flows through the first transistor. A gate terminal of a second transistor is connected to a load section, and a current depending on a change in a voltage of the drain terminal of the first transistor flows through the second transistor. A source terminal of the first transistor and a drain terminal of the second transistor are connected in common to a first resistance, and the current from the first transistor and the current from the second transistor flow through the first resistance. A third transistor supplies a current approximately equal to the current of the second transistor. The current supplied by the third transistor is output from an output end.

Abstract: A differential amplifier is provided, in which generation of unnecessary harmonic distortion in the differential output signal is suppressed. A common mode feedback circuit increases or decreases operating points of an inverting output terminal and a non-inverting output terminal such that an intermediate voltage of voltages respectively provided to an inverting input terminal and a non-inverting input terminal is consistent with to a reference voltage. Variations in voltage at the inverting input terminal and the non-inverting input terminal are suppressed, variations in electrical properties of elements connected to the input terminals are suppressed. Therefore, it is possible to suppress generation of harmonic distortion in the output signals from the inverting output terminal and the non-inverting output terminal.

Abstract: An example transconductance circuit includes a first portion that includes a first degeneration transistor, configured to receive a first input voltage, and a second portion that includes a second degeneration transistor, coupled to the first degeneration transistor and configured to receive a second input voltage. The first portion further includes a first input transistor, coupled to the first degeneration transistor and configured to provide a first output current, while the second portion further includes a second input transistor, coupled to the second degeneration transistor and configured to provide a second output current. Such a transconductance circuit may be used as an input stage capable of reliably operating within drain-source breakdown voltage of the transistors employed therein even in absence of any other protection devices, and may be significantly faster, consume lower power, and occupy smaller die area compared to conventional transconductance circuits.

Abstract: Memory device and formation method are provided. The memory device includes a substrate; a staircase structure on the substrate; a string driver structure over the staircase structure on a side opposite to the substrate; and a metal routing structure, between the string driver structure and the staircase structure along a vertical direction with respect to a lateral surface of the substrate. The staircase structure includes a plurality of word line tiers. The string driver structure includes a plurality of transistors to individually address the plurality of word line tiers. The string driver structure and the metal routing structure are vertically aligned with the staircase structure based on a lateral central region of the staircase structure.

Abstract: A differential amplifier of a memory controller may include: an amplification stage configured to amplify input differential signals to generate intermediate differential signals; a control circuit configured to control slew rates for the intermediate differential signals; and an output circuit configured to selectively perform one or more switching operations according to the intermediate differential signals to generate output differential signals.