Abstract: According to some embodiments, the present disclosure provides a method for determining wafer inspection parameters. The method includes identifying an area of interest in an IC design layout, performing an inspection simulation on the area of interest by generating a plurality of simulated optical images from the area of interest using a plurality of optical modes, and selecting, based on the simulated optical images, at least one of the optical modes to use for inspecting an area of a wafer that is fabricated based on the area of interest in the IC design layout.

Abstract: A method to determine a curvilinear pattern of a patterning device that includes obtaining (i) an initial image of the patterning device corresponding to a target pattern to be printed on a substrate subjected to a patterning process, and (ii) a process model configured to predict a pattern on the substrate from the initial image, generating, by a hardware computer system, an enhanced image from the initial image, generating, by the hardware computer system, a level set image using the enhanced image, and iteratively determining, by the hardware computer system, a curvilinear pattern for the patterning device based on the level set image, the process model, and a cost function, where the cost function (e.g., EPE) determines a difference between a predicted pattern and the target pattern, where the difference is iteratively reduced.

Abstract: A physically unclonable function (PUF) cell array includes a first PUF cell in a first column in a first direction, and a first row in a second direction, and a second PUF cell in a second row in the second direction. The first PUF cell includes a first set of conductive structures extending in the first and second direction, being on a first metal layer, and including a first and a second conductive structure extending in the first direction. The second PUF cell includes a second set of conductive structures extending in the first direction and second direction, being on the first metal layer and including a third and a fourth conductive structure extending in the first direction. The first and third conductive structures, or the second and fourth conductive structures are symmetric to each other with respect to a central line of the first and second PUF cells.

Abstract: Embodiments of the invention are directed to a computer-implemented method of determining timing constraints of a first component-under-design (CUD). The computer-implemented method includes accessing, using a processor, a plurality of timing constraint requirements configured to be placed on the first CUD by one or more second CUDs, wherein each of the plurality of timing constraint requirements is specifically designed for the CUD. The processor is used to perform a comparative analysis of each of the plurality of timing constraints to identify a single timing constraint that satisfies each of the plurality of timing constraints.

Abstract: A semiconductor device includes a first cell. The first cell includes a first functional feature, a first sensitivity region, at least one anchor node, wherein each of the at least one anchor node is different from the first functional feature, and a number of anchor nodes of the at least one anchor node linked to the first functional feature is based on a position of the first functional feature relative to the first sensitivity region. The semiconductor device further includes a second cell abutting the first cell. The second cell includes a second functional feature, wherein the second functional feature satisfies a minimum spacing requirement with respect to the first functional feature.

Abstract: A method includes generating a diffraction map from a plurality of target patterns, generating a favorable zone and an unfavorable zone from the diffraction map, placing a plurality of sub-resolution patterns in the favorable zone, and performing a plurality of geometric operations on the plurality of sub-resolution patterns to generate modified sub-resolution patterns. The modified sub-resolution patterns extend into the favorable zone, and are away from the unfavorable zone.

Abstract: In an embodiment, a method for optimizing an integrated circuit physical design for an integrated circuit. A physical design graph includes a plurality of physical design sub-configurations, each including a placement of a group of physical cells and having annotated characteristics. The method includes identifying, in the integrated circuit physical design, a first physical design sub-configuration including a first placement of a first group of the physical cells and having first annotated characteristics, the first annotated characteristics being outside target characteristics. The method includes selecting from the physical design graph, based on the first group of the physical cells and the target characteristics, at least a second physical design sub-configuration including a second placement of the first group of the physical cells and being within the target characteristics.

Abstract: A method for determining a deformation of a resist in a patterning process. The method involves obtaining a resist deformation model of a resist having a pattern, the resist deformation model configured to simulate a fluid flow of the resist due to capillary forces acting on a contour of at least one feature of the pattern; and determining, via the resist deformation model, a deformation of a resist pattern to be developed based on an input pattern to the resist deformation model.

Abstract: A layout geometry of a lithographic mask is received. The layout geometry is partitioned into feature images, for example as selected from a library. The library contains predefined feature images and their corresponding precalculated mask 3D (M3D) filters. The M3D filter for a feature image represents the electromagnetic scattering effect of that feature image for a given source illumination. The mask function contribution from each of the feature images is calculated by convolving the feature image with its corresponding M3D filter. The mask function contributions are combined to determine a mask function for the lithographic mask illuminated by the source illumination.

Abstract: A system and a method are disclosed for placing hardware components on a printed circuit board (“PCB”) in a way that enables all hardware components on the PCB to be passively cooled without using active cooling systems. Components are selected to be placed onto the PCB and heat metrics for each component is obtained (e.g., from a server). The components are ranked based on the amount of heat that each component generates. A corresponding position for each of the hardware components is determined based on the ranking of the components and the orientation of the PCB. The placement is based on the concept that air having higher temperature rises while air having cooler temperature falls. A representation of the PCB according to corresponding positions of the hardware components may be generated for display.

Abstract: This application discloses a computing system to identify structures of an integrated circuit capable of being fabricated utilizing a lithographic mask described by mask layout data and to generate process windows for the identified structures based, at least in part, on the mask layout data and a failure definition for the identified structures. The computing system utilizes process windows for the identified structures to determine failure rates for the identified structures based on a distribution of the manufacturing parameters. The computing system determines frequency of occurrences for the identified structures from the mask layout data and generates a die yield metric for the integrated circuit by aggregating the failure rates for the identified structures based on the frequency of occurrences for the identified structures in the integrated circuit. These increases in yield of the integrated circuit allow manufacturers to produce more units per fixed processing cost of the wafer.

Abstract: A multiplexer circuit includes first and second fins each extending in an X-axis direction. First, second, third and fourth gates extend in a Y-axis direction perpendicular to the X-axis direction and contact the first and second fins. The first, second, third and fourth gates are configured to receive first, second, third and fourth data signals, respectively. Fifth, sixth, seventh and eighth gates extend in the Y-axis direction and contact the first and second fins, the fifth, sixth, seventh and eighth gates, and are configured to receive the first, second, third and fourth select signals, respectively. An input logic circuit is configured to provide an output at an intermediate node. A ninth gate extends in the Y-axis direction and contacts the first and second fins. An output logic circuit is configured to provide a selected one of the first, second, third and fourth data signals at an output terminal.

Abstract: A method and a system for correcting lithography process hotspots based on stress damping adjustment are provided. The method includes: acquiring a mark hotspot of a mask pattern; forming N annuli centered on the mark hotspot from inner to outer on a mask; moving vertexes of the mask pattern located in each annulus by a specific distance in a direction deviating from the mark hotspot and connecting the moved vertexes according to an original connection relationship to acquire an updated layout; verifying electrical characteristics of the updated layout, determining whether a deviation of the electrical characteristics of the updated layout is within a tolerable range, and performing geometric correction to compensate for a deviation of electrical parameters if no is determined and then ending correction, or ending the correction if yes is determined.

Abstract: A multi-bit flip-flop includes a first flip-flop, a second flip-flop and a first inverter. The first flip-flop has a first driving capability. The second flip-flop has a second driving capability different from the first driving capability. The first inverter is configured to receive a first clock signal on a first clock pin, and is configured to generate a second clock signal inverted from the first clock signal. The first flip-flop and the second flip-flop are configured to share at least the first clock pin.

Abstract: The current disclosure describes techniques for managing planarization of features formed on a semiconductor wafer. The disclosed techniques achieve relative planarization of micro bump structures formed on a wafer surface by adjusting the pattern density of the micro bumps formed within various regions on the wafer surface. The surface area size of a micro bump formed within a given wafer surface region may be enlarged or reduced to change the pattern density. A dummy micro bump may be inserted into a given wafer surface region to increase the pattern density.

Abstract: In a method of optimizing a lithography model in a lithography simulation, a mask is formed in accordance with a given layout, a wafer is printed using the mask, a pattern formed on the printed wafer is measured, a wafer pattern is simulated using a wafer edge bias table and the given mask layout, a difference between the simulated wafer pattern and the measured pattern is obtained, and the wafer edge table is adjusted according to the difference.

Abstract: A method of enhancing a layout pattern includes determining a target layout pattern comprising a disk shape associated with a hole. The method includes defining a polygon having a plurality of vertices on the disk shape. The plurality of vertices coincide with a boundary of the disk shape and the polygon is an initial layout pattern of the hole. The method includes performing an iterative correction of the initial layout pattern. The iterative correction includes projecting the layout pattern of the hole onto a substrate, determining an error between the target layout pattern and the projected layout pattern, and adjusting the layout pattern by moving the vertices of the polygon to generate a next iteration of the layout pattern. The method includes continuing the adjusting, projecting, and determining until a criterion is satisfied and a final iteration of the layout pattern of the hole is generated.

Abstract: Methods, systems, and apparatus, including computer programs encoded on computer storage media, for generating a computer chip floorplan. One of the methods includes obtaining netlist data for a computer chip; and generating a computer chip floorplan, comprising placing a respective node at each time step in a sequence comprising a plurality of time steps, the placing comprising, for each time step: generating an input representation for the time step; processing the input representation using a node placement neural network having a plurality of network parameters, wherein the node placement neural network is configured to process the input representation in accordance with current values of the network parameters to generate a score distribution over a plurality of positions on the surface of the computer chip; and assigning the node to be placed at the time step to a position from the plurality of positions using the score distribution.

Abstract: A method for determining one or more tests suitable for verifying that a circuit conforms to a specification is presented. The specification has at least one state machine. Example circuits are asynchronous circuits. The method includes analysing the specification to automatically determine the one or more tests for circuit verification.

Abstract: Embodiments of the present application relate to the technical field of semiconductor, and disclose a design method of a wafer layout and an exposure system of a lithography machine. The design method of a wafer layout includes: providing a yield distribution map of a wafer under an initial wafer layout; determining a yield edge position of the wafer according to the yield distribution map; and calculating a new wafer layout according to a die size and the yield edge position.