Abstract: There is provided a differential signal transmission circuit that includes a first output terminal, a second output terminal connected to the first output terminal via a load resistor, a high-side transistor formed of a p-channel MOSFET and connected between an application terminal of a power supply voltage and the first output terminal, a low-side transistor formed of an n-channel MOSFET and connected between an application terminal of a ground potential and the second output terminal, a high-side pre-driver configured to drive the high-side transistor, a low-side pre-driver configured to drive the low-side transistor, a first resistance part connected between an output end of the high-side pre-driver and a gate of the high-side transistor, and a second resistance part connected between an output end of the low-side pre-driver and a gate of the low-side transistor.

Abstract: A current drive circuit applied in an LED drive circuit that is compatible with a triac dimmer and is configured to generate a direct current bus voltage includes: a current generation circuit configured to receive the direct current bus voltage, and to generate a drive current based on a PWM dimming signal, in order to drive an LED load; and an input current regulation circuit configured to generate a regulation signal based on a duty cycle of the PWM dimming signal, in order to control an operation state of the triac dimmer.

Abstract: A power on and power down reset circuit includes a reference voltage generation module, a monitoring voltage generation module, and a voltage comparator. The reference voltage generation module is utilized to generate a reference voltage with a first PMOS transistor, a second PMOS transistor, a third PMOS transistor, a first NMOS transistor, a second NMOS transistor, a third NMOS transistor, a first resistance, and a second resistance. The monitoring voltage generation module is utilized to generate a monitoring voltage. The voltage comparator is utilized to generate a reset voltage by comparing the reference voltage to the monitoring voltage. Thus, the power on and power down reset circuit can achieve the effect of power savings and decreasing error rate of the reset voltage.

Abstract: Examples of clock generators with very low duty cycle distortion (DCD) are provided. A clock source and driver generate a main clock signal and a complementary clock signal that are input to a chopper circuit, which also receives complementary chopper control signals from a non-overlapping generator circuit. The chopper circuit is controlled to pass the main clock signal as a first output signal when the chopper circuit is in a first state, and pass the complementary clock signal as a second output signal when the chopper circuit is in a third state. In a second state, which occurs during each of the falling edges of the main clock signal, the chopper circuit holds the previous state, and does not transmit the falling edges of the main clock signal. The rising edges of the main clock signal is used to derive the rising and falling edges of the output signals.

Abstract: A gate voltage magnitude compensation equalization method and circuit for series operation of power switch transistors are provided. A dynamic voltage equalization of series-connected power switch transistors is implemented by using sampling principles where voltages of the power switch transistors are controlled by gate voltage magnitude and unbalanced voltage differentials are converted into unbalanced current differentials of buffer currents. The gate voltage magnitude compensation equalization method and circuit relates to differential control and works in a dynamic voltage change process of the series-connected power switch transistors, without having a negative effect on operation of the power switch transistors under normal operating conditions.

Abstract: Devices, systems, and methods are provided for generating a high, dynamic voltage boost. An integrated circuit (IC) includes a driving circuit having a first stage and a second stage. The driving circuit is configured to provide an overdrive voltage. The IC also includes a charge pump circuit coupled between the first stage and the second stage. The charge pump circuit is configured generate a dynamic voltage greater than the overdrive voltage. The IC also includes a bootstrap circuit coupled to the charge pump circuit, configured to further dynamically boost the overdrive voltage of the driving circuit.

Abstract: A bandgap voltage reference circuit includes first and second transistors (e.g., 3-terminal BJTs or diode-connected BJTs), and a PTAT element (e.g., resistance or capacitance). The first transistor is at a first die location, and operates with a first base-emitter voltage. The second transistor is at a second die location, and operates with a second base-emitter voltage. Each of the first and second transistors may include multiple individual parallel-connected transistors. The PTAT element is operatively coupled to the first and second transistors such that a voltage difference between the first and second base-emitter voltages drops across the PTAT element. The first and second locations are separated by a distance (e.g., 1.5% or more of die length, or such that the respective centroids of the first and second transistor are spaced from one another). Such spatial distribution helps mitigate voltage shift induced by mechanical stress, and is insensitive to process variation.

Abstract: A voltage generation device and a voltage generation method are provided. The voltage generation device includes a first voltage generator, a second voltage generator, a third voltage generator and an output voltage generator. The first to third voltage generators respectively generate first to third voltages. The output voltage generator generates an output voltage at an output end according to the first voltage, the second voltage and the third voltage. When the output voltage is converted between the first voltage and the second voltage, during a first time period, the first voltage generator provides the first voltage to a first capacitor, and the third voltage generator causes the output voltage to change from the second voltage to the third voltage. During a second time period, the first voltage generator and the first capacitor cause the output voltage to change from the third voltage to the first voltage.

Abstract: A power supply detection circuit for an integrated circuit (IC) includes a reference voltage circuit and a comparator circuit. The reference voltage circuit produces a reference voltage from the supply voltage at a reference voltage node. The comparator circuit includes a first p-type metal oxide semiconductor (PMOS) transistor with a source coupled to a positive supply terminal, a gate receiving the reference voltage, and a drain connected to a comparator output terminal. A first n-type metal oxide semiconductor (NMOS) transistor has a drain connected to the comparator output terminal, a source connected to the negative supply terminal, and a gate receiving a second voltage that varies relative to the supply voltage. A second PMOS transistor has a source coupled to the positive supply terminal, a gate connected to the reference voltage node, and a drain providing the second voltage and coupled to a filter.

Abstract: According to one embodiment, in a semiconductor integrated circuit, the second circuit samples an amplitude of the output second signal at a plurality of timings every given cycle in a period corresponding to a second period of the pattern. The second circuit controls a parameter relating to the frequency characteristic for the first circuit according to a first magnitude relation and a second magnitude relation. The first magnitude relation is a relation between an absolute value of a first amplitude and a first threshold. The first amplitude is an amplitude sampled at a first timing among the plurality of timings. The second magnitude relation is a relation between an absolute value of a second amplitude and the first threshold. The second amplitude is an amplitude sampled at a second timing. The second timing is a timing after the first timing among the plurality of timings.

Abstract: A common gate resistor bypass arrangement for a stacked arrangement of FET switches, the arrangement including a series combination of an nMOS transistor and a pMOS transistor connected across a common gate resistor. During at least a transition portion of the transition state of the stacked arrangement of FET switches, the nMOS transistor and the pMOS transistor are both in an ON state and bypass the common gate resistor. On the other hand, during at least a steady state portion of the ON steady state and the OFF steady state of the stacked arrangement of FET switches, one of the nMOS transistor and the pMOS transistor is in an OFF state and the other of the nMOS transistor and the pMOS transistor is in an ON state, thus not bypassing the common gate resistor.

Abstract: A drive circuit drives a power semiconductor element including a control terminal, a first main electrode, and a second main electrode. The drive circuit includes a first switching-off circuit and a second switching-off circuit each for turning off the power semiconductor element. The second switching-off circuit is lower in impedance than the first switching-off circuit. In a case where the power semiconductor element is turned off, only the first switching-off circuit operates when the power semiconductor element is in an unusual state, and the first switching-off circuit and the second switching-off circuit complementarily operate when the power semiconductor element is in a normal state.

Abstract: An image rejection mixer includes a delay circuit for delaying one of first signals divided by a distribution circuit and a second signal provided to a second mixing circuit by the same delay amount d, or delaying the other one of the first signals divided by the distribution circuit and the second signal provided to a first mixing circuit by the same delay amount d.

Abstract: An electronic device includes circuitry configured to output a first output signal shifting to a logic high level at a first time in response to a supply voltage reaching a first voltage level, output a second output signal shifting to a logic high level at a second time occurring after the first time in response to the supply voltage reaches a second level higher than the first level; and the circuitry includes an AND gate circuit configured to output a reset signal based on the first output signal and the second output signal.

Abstract: Provided is a power amplification module that includes: an amplification transistor that has a constant power supply voltage supplied to a collector thereof, a bias current supplied to a base thereof and that amplifies an input signal input to the base thereof and outputs an amplified signal from the collector thereof; a first current source that outputs a first current that corresponds to a level control voltage that is for controlling a signal level of the amplified signal; and a bias transistor that has the first current supplied to a collector thereof, a bias control voltage connected to a base thereof and that outputs the bias current from an emitter thereof.

Abstract: A system comprises time-tracking circuitry and phase parameter generation circuitry. The time-tracking circuitry is operable to generate a time-tracking value corresponding to time elapsed since a reference time. The phase parameter generation circuitry operable to: receive the time-tracking value; receive a control signal that conveys a frequency parameter corresponding to a desired frequency of an oscillating signal; and generate a plurality of phase parameters used for generation of an oscillating signal, wherein the generation of the plurality of phase parameters is based on the time-tracking value and the frequency parameter such that the oscillating signal maintains phase continuity across changes in the frequency parameter.

Abstract: A master latch circuit, including a first p-type transistor, a first n-type transistor, and a second n-type transistor connected in series; a first node connected to the first p-type transistor and the first n-type transistor, and a NAND circuit configured to receive a signal of the first node and a clock signal and output a result of a NAND operation to a second node, wherein a gate of the first p-type transistor is connected to the second node.

Abstract: A power amplification module includes: a first bipolar transistor in which a radio frequency signal is input to a base and an amplified signal is output from a collector; a second bipolar transistor that is thermally coupled with the first bipolar transistor and that imitates operation of the first bipolar transistor; a third bipolar transistor in which a first control voltage is supplied to a base and a first bias current is output from an emitter; a first resistor that generates a third control voltage corresponding to a collector current of the second bipolar transistor at a second terminal; and a fourth bipolar transistor in which a power supply voltage is supplied to a collector, the third control voltage is supplied to a base, and a second bias current is output from an emitter.

Abstract: Example MOSFET circuits include a first metal-oxide-semiconductor field-effect transistor (MOSFET) having a gate, a source and a drain, and a second MOSFET coupled in series with the first MOSFET. The second MOSFET has a gate, a source and a drain. The MOSFET circuit also includes a controller configured to supply a same control signal to the gate of the first MOSFET and the gate of the second MOSFET to turn on or turn off the first MOSFET and the second MOSFET when a drain-source voltage of the first MOSFET and a drain-source voltage of the second MOSFET are substantially zero. Other MOSFET circuits and methods of operating MOSFET circuits are also disclosed.

Abstract: The physically unclonable function device (DIS) comprises a set of MOS transistors (TR1i, TR2j) mounted in diodes having a random distribution of respective threshold voltages, and comprising N first transistors and at least one second transistor. At least one output node of the function is capable of delivering a signal, the level of which depends on the comparison between a current obtained using a current circulating in the at least one second transistor and a current obtained using a reference current that is equal or substantially equal to the average of the currents circulating in the N first transistors. A first means (FM1i) is configured to impose on each first transistor a respective fixed gate voltage regardless of the value of the current circulating in the first transistor, and a second means (SM2j) is configured to impose a respective fixed gate voltage on each second transistor regardless of the value of the current circulating in the second transistor.