Abstract: An apparatus is provided that includes a die stack having a first die and a second die disposed above a substrate, and a capacitor die disposed in the die stack between the first die and the second die. The capacitor die includes a plurality of integrated circuit capacitors that are configured to be selectively coupled together to form a desired capacitor value coupled to at least one of the first die and the second die.

Abstract: A storage element is provided. The storage element includes a memory layer; a fixed magnetization layer; an intermediate layer including a non-magnetic material; wherein the intermediate layer is provided between the memory layer and the fixed magnetization layer; wherein the fixed magnetization layer includes at least a first magnetic layer, a second magnetic layer, and a non-magnetic layer, and wherein the first magnetic layer includes a CoFeB composition. A memory apparatus and a magnetic head are also provided.

Abstract: Implementations of a semiconductor package system may include a first bond wire bonded to a portion of a leadframe and to a pad of a semiconductor die, the first bond wire coupled to one of a power source or a ground; and a second bond wire bonded to the portion of the leadframe and to a control integrated circuit. The portion of the leadframe may form a current sense area and the control integrated circuit may be configured to use the second bond wire and the current sense area to measure a current flowing through the first bond wire during operation.

Abstract: A method for fabricating semiconductor device includes the steps of forming an inter-metal dielectric (IMD) layer on a substrate, forming a trench in the IMD layer, forming a synthetic antiferromagnetic (SAF) layer in the trench, forming a metal layer on the SAF layer, planarizing the metal layer and the SAF layer to form a metal interconnection, and forming a magnetic tunneling junction (MTJ) on the metal interconnection.

Abstract: A semiconductor device, having a first semiconductor chip including a first side portion at a front surface thereof and a first control electrode formed in the first side portion, a second semiconductor chip including a second side portion at a front surface thereof and a second control electrode formed in the second side portion, a first circuit pattern, on which the first semiconductor chip and the second semiconductor chip are disposed, a second circuit pattern, and a first control wire electrically connecting the first control electrode, the second control electrode, and the second circuit pattern. The first side portion and the second side portion are aligned. The first control electrode and the second control electrode are aligned. The second circuit pattern are aligned with the first control electrode and the second control electrode.

Abstract: An insertion layer for perpendicular spin orbit torque (SOT) memory devices between the SOT electrode and the free magnetic layer, memory devices and computing platforms employing such insertion layers, and methods for forming them are discussed. The insertion layer is predominantly tungsten and improves thermal stability and perpendicular magnetic anisotropy in the free magnetic layer.

Abstract: An antiferroelectric memory device includes at least one antiferroelectric memory cell. Each of the at least one antiferroelectric memory cell includes a first electrode, a second electrode and a stack containing an antiferroelectric layer and a doped semiconductor layer or a ferroelectric layer located between the first and the second electrodes.

Abstract: A memory device includes a package substrate and at least one stack of a plurality of semiconductor dies disposed on the package substrate. The plurality of semiconductor dies can be stacked in a shingled configuration. Each semiconductor die includes a plurality of slits disposed in a first direction. An offset direction defining the shingled arrangement is in-line with the first direction. Each semiconductor die can include a die substrate and a plurality of memory planes disposed on the die substrate with each memory plane having a memory cell array. Each slit can divide and separate each memory plane into at least one of logic blocks or sub-logic blocks. The semiconductor die can include a plurality of bond pads linearly aligned in a second direction that is perpendicular to the first direction.

Abstract: A module has electronic components mounted to a Printed Circuit Board (PCB) with multiple patterned conductive layers connecting to conductive slot metal around a conductive slot. A groove is cut through a top molding encapsulant above and into the conductive slot but does not cut through a bottom molding encapsulant. A terminal pin is inserted into the groove and pushed down into the conductive slot. When heated, embedded solder previously applied to the conductive slot metal flows between the end of the terminal pin and the conductive slot metal to form a solder bond. An end of the PCB past the conductive slot has no metal traces, preventing shorts. Epoxy can be placed into the groove around the terminal pin or a hole formed in the terminal pin to increase strength of the anchored terminal pin. The molding around the groove protects terminal pins from shorting from the side.

Abstract: Systems, apparatuses, and methods for implementing a dual-purpose millimeter-wave frequency band transmitter are disclosed. A system includes a dual-purpose transmitter sending a video stream over a wireless link to a receiver. In some embodiments, the video stream is generated as part of an augmented reality (AR) or virtual reality (VR) application. The transmitter operates in a first mode to scan and map an environment of the transmitter and receiver. The transmitter generates radio frequency (RF) signals in a first frequency range while operating in the first mode. Additionally, the transmitter operates in a second mode to send video data to the receiver, and the transmitter generates RF signals in the first frequency range while operating in the second mode.

Abstract: A semiconductor package includes: a semiconductor device; a lead frame; a built-in package including an insulated driver having a multi-chip configuration and driving the semiconductor device; a wire connecting the built-in package to the semiconductor device; and a resin sealing the semiconductor device, the lead frame, the built-in package, and the wire, wherein the built-in package is directly joined to the lead frame.

Abstract: A semiconductor device includes at least one transistor, a plurality of input wires, and a plurality of output wires. The at least one transistor has a plurality of input pads arranged along one side of the at least one transistor and a plurality of output pads arranged along another side of the at least one transistor facing the one side. The plurality of input wires are respectively connected to the plurality of input pads. The plurality of output wires are respectively connected to the plurality of output pads and have longer wire lengths than the plurality of input wires. Adjacent input wires of the plurality of input wires are arranged parallel to each other, and adjacent output wires of the plurality of output wires are arranged non-parallel to each other.

Abstract: A semiconductor package structure includes a semiconductor package structure includes a first supporting bar, a second supporting bar and an encapsulant. The second supporting bar is adjacent to the first supporting bar. The first supporting bar and the second supporting bar extend substantially along a first direction. The encapsulant covers the first supporting bar and the second supporting bar. The encapsulant defines a first recess and a second recess recessed from a lower surface of the encapsulant. The first recess extends substantially along a second direction different from the first direction. The second recess is located between the first recess and the second supporting bar.

Abstract: A radar includes transmitters, receivers, a memory, and a processor. The transmitters transmit radio signals, and the receivers receive reflected radio signals. The processor produces samples by correlating reflected radio signals with time-delayed replicas of transmitted radio signals. The processor stores this information as a first data structure, with information related to signals reflected from objects as a function of time (one dimension of the data structure) at various distances (a second dimension of the data structure) for various receivers (a third dimension of the data structure). The first data structure is processed to compute velocity and angle estimates, which are stored in second and third data structures, respectively. One or more memory optimizations are used to increase performance. Before storing the second and third data structures in a memory, the second and third data structures are sparsified to only include the outputs in specific regions of interest.

Abstract: A semiconductor device having an arm block. The arm block includes a first circuit pattern that, in a plan view of the semiconductor device, has a recess formed thereon that extends inward from a side thereof, the recess forming a disposition area of the semiconductor device, a second circuit pattern having at least a part disposed in the disposition area, and a plurality of semiconductor chips formed on the first circuit pattern. Each semiconductor chip has a positive electrode on a back surface thereof, and a control electrode and a negative electrode on a front surface thereof, the negative electrode being electrically connected to the second circuit pattern by a wiring member.

Abstract: A semiconductor package includes a package substrate including: first and second bond finger arrays, each of the first and second finger arrays arranged in a first direction on a surface of the package substrate; a first semiconductor chip disposed on the surface of the package substrate and including a first chip pad array corresponding to the first bond finger array; a second semiconductor chip disposed on the surface of the package substrate and including a second chip pad array corresponding to the second bond finger array; first bonding wires connecting bond fingers of the first bond finger array to chip pads of the first chip pad array; and second bonding wires connecting bond fingers of the second bond finger array to chip pads of the second chip pad array.

Abstract: Disclosed are a system, apparatus, and method for monitoring integrity of satellites, and global navigation satellite systems (GNSS). One or more satellites in one or more GNSS are monitored based on a reference crowdsourced integrity report. One or more satellite integrity metrics are determined for the one or more satellites based at least on signals from the one or more satellites. A position of the mobile device is estimated. The position of the mobile device and the one or more satellite integrity metrics are provided.

Abstract: A wafer-scale satellite bus and a manner of making the same include using wafer reconstruction techniques to stack functional diced circuits onto each other and bond them. The disclosed techniques allow for a variety of functions in each die, including providing, without limitation: ground-based communications, attitude and propulsion control, fuel tanks and thrusters, and power generation. The wafers are initially manufactured according to a common wafer design that provides electrical and power interconnects, then different wafers are further processed using subsystem-specific techniques. The circuits on differently-processed wafers are reconstructed into a single stack using e.g. wafer bonding. Surface components are mounted, and the circuitry is diced to form the final satellites. Mission-specific functions can be incorporated, illustratively by surface-mounting, to the bus at an appropriate stage of assembly, on-wafer circuitry or instrument packages for performing these functions.

Abstract: A semiconductor device A1 includes a substrate 3, a conductive section 5 formed on the substrate 3 and including a conductive material, a lead 1A located on the substrate 3, a semiconductor chip 4A located on the lead 1A, a control chip 4G located on the substrate 3 and electrically connected to the conductive section 5 and the semiconductor chip 4A for controlling an operation of the semiconductor chip 4A, and a resin 7 covering the semiconductor chip 4A, the control chip 4G, at least a part of the substrate 3 and a part of the lead 1A. This configuration contributes to achieving a higher level of integration of the semiconductor device.

Abstract: In an embodiment a method includes providing a growth substrate comprising a growth surface formed by a planar region having a plurality of three-dimensional surface structures on the planar region, directly applying a nucleation layer of oxygen-containing AlN to the growth surface and growing a nitride-based semiconductor layer sequence on the nucleation layer, wherein growing the semiconductor layer sequence includes selectively growing the semiconductor layer sequence upwards from the planar region such that a growth of the semiconductor layer sequence on surfaces of the three-dimensional surface structures is reduced or non-existent compared to a growth on the planar region, wherein the nucleation layer is applied onto both the planar region and the three-dimensional surface structures of the growth surface, and wherein a selectivity of the growth of the semiconductor layer sequence on the planar region is targetedly adjusted by an oxygen content of the nucleation layer.