Abstract: A semiconductor package structure and a method for manufacturing a semiconductor package structure are provided. The semiconductor package structure includes a first package and a second package. The first package includes a first substrate, an electronic component, a trace layer, and a first conductive structure. The first substrate has a first surface and a second surface opposite to the first surface. The electronic component is embedded in the first substrate. The trace layer has an uppermost conductive layer embedded in the first substrate and exposed from the first surface of the first substrate. The first conductive structure electrically connects the trace layer to the second surface of the first substrate. The second package is disposed on the first surface of the first substrate of the first package.

Abstract: The invention relates to improved methods and implementation of reliably manufacturing laminated solar panel products having one or more axis of curvature, wherein at least one solar cell also has one or more axis of curvature, in a manufacturing plant, the manufacturing plant being capable of continuous, optimized operation. A substrate and a superstrate having a doubly-curved geometry may be assembled with a core disposed therebetween, the core comprising a solar cell array including at least one solar cell. During the lamination process, the plant substantially eliminates cracking of the at least one solar cell of the solar array through controlled and uniform application of lamination pressure and temperature that applies uniform local pressure simultaneously to each cell, resulting in a durable and reliable product. The invention further relates to a plant and/or facility having efficient, effective, and repeatable results relating to such methods.

Abstract: A package that includes a substrate and an integrated device coupled to the substrate. The substrate includes at least one dielectric layer and a plurality of interconnects comprising a first via interconnect and a first trace interconnect, wherein the first via interconnect is directly coupled to the first trace interconnect. The first via interconnect is coupled to the first trace interconnect without an intervening pad interconnect between the first via interconnect and the first trace interconnect.

Abstract: An oscillator capable of quick startup is provided. A transistor is provided between an output terminal of a certain stage inverter and an input terminal of the following stage inverter included in the voltage controlled oscillator. With the use of the on resistance of the transistor, the oscillation frequency of the clock signal is controlled. While supply of the power supply voltage is stopped, a signal that is input to the input terminal of the inverter just before supply of the power supply voltage is stopped is stored by turning off the transistor. This operation makes it possible to immediately output a clock signal that has the same frequency as that before supply of the power supply voltage is stopped at the time when the power supply voltage is supplied again.

Abstract: An interposer, including a redistribution layer structure, first conductive terminals, and second conductive terminals, is provided. The first conductive terminals are disposed on a first surface and are electrically connected to the second conductive terminals. An orthographic projection area of the first conductive terminals on the redistribution layer structure is inside a circuit range outline. There is a first pitch between the adjacent first conductive terminals. The second conductive terminals are disposed on a second surface. An orthographic projection area of a first part of the second conductive terminals on the redistribution layer structure is inside the circuit range outline. An orthographic projection area of a second part of the second conductive terminals on the redistribution layer structure is outside the circuit range outline. There is a second pitch between the adjacent second conductive terminals. The second pitch is greater than the first pitch. A semiconductor package is also provided.

Abstract: A semiconductor package includes a die, a redistribution structure and a plurality of conductive terminals. The redistribution structure is disposed below and electrically connected to the die. The redistribution structure includes a plurality of conductive patterns, and at least one of the plurality of conductive patterns has a cross-section substantially parallel to the surface of the die. The cross-section has a long-axis and a short-axis, and the long-axis intersects with a center axis of the die. The conductive terminals are disposed below and electrically connected to the redistribution structure.

Abstract: The disclosed subject matter relates generally to methods of forming a semiconductor device, such as a moisture sensor. A plurality of electrodes and a bond pad are formed in a dielectric region. A passivation layer is formed on each electrode in the plurality of electrodes and the bond pad. A barrier layer is formed on the passivation layer. A plurality of trenches are formed to extend through the barrier layer and into the dielectric region. Formation of the trenches simultaneously exposes an upper surface of the bond pad. A moisture sensitive dielectric layer is formed on the barrier layer. Formation of the moisture sensitive dielectric layer also fills the trenches to form a plurality of projections, each projection being formed between two electrodes in the plurality of electrodes.

Abstract: Some embodiments of the present disclosure provide a semiconductor device. The semiconductor device includes: a bottom package; wherein an area of a contact surface between the conductor and the through via substantially equals a cross-sectional area of the through via, and the bottom package includes: a molding compound; a through via penetrating through the molding compound; a die molded in the molding compound; and a conductor on the through via. An associated method of manufacturing the semiconductor device is also disclosed.

Abstract: An apparatus includes a plurality of layers arranged on top of one another and including at least one ground layer and a signal layer; a first set of signal pads and a second set of signal pads on the signal layer; and a slot formed in the at least one ground layer between the first set of signal pads and the second set of signal pads. The apparatus can include an optical assembly housed by the plurality of layers and connected to the first set of signal pads and the second set of signal pads. The optical assembly can include a micro Intradyne Coherent Receiver (?ICR), a Coherent Driver Modulator (CDM), or a Coherent Optical Subassembly (COSA).

Abstract: A chip-on-film package may include a film substrate including a chip region and an edge region, a semiconductor chip provided on the chip region and mounted on a top surface of the film substrate, the semiconductor chip including a chip pad adjacent to a bottom surface thereof, an input line and an output line provided on the edge region and disposed on the top surface of the film substrate, a connection terminal interposed between the film substrate and the semiconductor chip, and a redistribution pattern disposed between the semiconductor chip and the connection terminal.

Abstract: A light emitting device includes: a base substrate; a plurality of unit regions provided on the base substrate; a barrier disposed at a boundary of the unit regions to surround each of the unit regions; a dam disposed in each of the unit regions to be spaced apart from the barrier; a first electrode provided in each of unit light emitting regions surrounded by the dam; a second electrode disposed in each of the unit light emitting regions, the second electrode of which at least one region is provided opposite to the first electrode; and one or more LEDs provided in each of the unit light emitting regions, the one or more LEDs being electrically connected between the first electrode and the second electrode.

Abstract: The present disclosure relates to a chip on film package, in which communication wires for communication with a control circuit are disposed to traverse a semiconductor chip thereunder so as to simplify the wiring inside the semiconductor chip.

Abstract: In accordance with disclosed embodiments, there are provided systems, methods, and apparatuses for implementing a Pad on Solder Mask (PoSM) semiconductor substrate package.

Abstract: A wiring substrate includes a first insulation layer, a first through hole extending through the first insulation layer in a thickness-wise direction, a first via wiring formed in the first through hole, a second insulation layer formed on an upper surface of the first insulation layer, a first recess formed in a lower surface of the second insulation layer and connected to the first through hole, an opening formed in an upper surface of the second insulation layer and connected to the first recess, a second recess formed in an upper surface of the first via wiring and connected to the first recess, a second via wiring formed in the opening, the first recess, and the second recess, and a first wiring pattern formed on the upper surface of the second insulation layer and electrically connected to the first via wiring by the second via wiring.

Abstract: A method of manufacturing an ECO base cell includes forming first and second active areas on opposite sides of, and having corresponding long axes arranged parallel to, a first axis of symmetry; forming non-overlapping first, second and third conductive structures having long axes in a second direction perpendicular to the first direction and parallel to a second axis of symmetry, each of the first, second and third conductive structures to correspondingly overlap the first and second active areas, the first conductive structure being between the second and third conductive structures; removing material from central regions of the second and third conductive structures; and forming a fourth conductive structure being over the central regions of the second and third conductive structures and occupying an area which substantially overlaps a first segment of the first conductive structure and a first segment of one of the second and third conductive structures.

Abstract: A display module includes a display panel including a plurality of pixels, a carrier panel on a rear surface of the display panel, and an adhesive layer disposed between the display panel and the carrier panel, where the adhesive layer is in contact with the carrier panel. Lateral surfaces of the adhesive layer are recessed from lateral surfaces of the carrier panel.

Abstract: A protection film for an electronic device includes an adhesive layer including a first surface to which an electronic device is attached, and a film layer which contacts a second surface of the adhesive layer and includes at least one member, where a thickness of the adhesive layer satisfies Inequality 1: z?(5.1x+57.4)·ln(y)?(14.7x+140.5), where z is the thickness of the adhesive layer in terms of micrometers, x is a modulus of a member of the film layer which directly contacts the adhesive layer in terms of gigapascals, and y is a total thickness of the film layer in terms of micrometers.

Abstract: Discussed is a device for self-assembling semiconductor light-emitting including: a chip supply part to supply the semiconductor light-emitting diodes to the substrate in cooperation with magnets disposed in a plurality of rows to form the magnetic field, wherein the chip supply part includes: a chip accommodating part to accommodate the semiconductor light-emitting diodes; a vertical moving part to adjust a distance between the chip supply part and the magnets; a horizontal moving part to move the chip supply part such that the chip accommodating part is alternately overlapped with a part of the magnets; and a controller to drive the vertical and horizontal moving parts to control a position of the chip supply part, and the controller moves the chip supply part in at least one of a horizontal direction and a vertical direction at a predetermined path and a plurality of points existing on the predetermined path.

Abstract: A method for manufacturing a display backplane, a display backplate, and a display device are disclosed. The method includes: forming a planarization layer on one side of a substrate inside a pixel region, a partition region, and a perforation region; forming at least one girdle of annular passivation layer disposed around the perforation region on a surface, away from the substrate, of the planarization layer inside a portion of the partition layer; removing a portion of the planarization layer, inside the partition region, uncovered by the annular passivation layer and the planarization layer, inside the partition region, partially covered by the annular passivation layer, to obtain at least one girdle of annular isolation columns disposed between the substrate and the annular passivation layer and around the perforation region; and forming organic light-emitting elements on one side of the planarization layer away from the substrate to obtain the display backplane.

Abstract: A semiconductor package includes a multilayer substrate including a dielectric layer, a first conductive layer forming a first set of electrical contacts, a second conductive layer forming package electrical contacts and two capacitor electrical contacts, conductive vias extending through the dielectric layer between the first conductive layer with the second conductive layer, and a solder mask layer over the second conductive layer. The semiconductor package further includes a semiconductor die on the first side of the multilayer substrate electrically connected a capacitor on the second side of the multilayer substrate. A recessed portion of the capacitor is within a capacitor opening of the solder mask layer between the two capacitor electrical contacts and a board-side surface of the solder mask layer.