Abstract: A data measuring device includes a communicating part capable of communicating with a plurality of numerical control devices which control a plurality of machine tools through communication cables, a physical data measuring part which measures physical data relating to operations of drive shafts of the machine tools corresponding to the numerical control devices which communicate with the communicating part through such numerical control devices, and a destination determining part which successively determines a numerical control device which should be the destination of the communicating part. The communicating part successively switches the destination so as to communicate with the numerical control device which should be the destination determined by the destination determining part, when the physical data measuring part measures the physical data.

Abstract: The integrated circuit includes a gate structure over a substrate. The integrated circuit further includes a first silicon-containing material structure in a recess adjacent to the gate structure. The first silicon-containing material structure includes a first layer having an uppermost surface below a top surface of the substrate and a bottommost surface in contact with the substrate. The first silicon-containing material structure further includes a second layer over the first layer, wherein an entirety of the second layer is co-planar with or above the top surface of the substrate. A first region of the second layer closer to the gate structure is thicker than a second region of the second layer farther from the gate structure. Thickness is measured in a direction perpendicular to the top surface of the substrate.

Abstract: A semiconductor device includes a gate stack arranged on a channel region of a semiconductor layer and a semiconductor layer arranged on an insulator layer. A crystalline source/drain region is arranged in a cavity in the insulator layer, and a spacer is arranged adjacent to the gate stack, the spacer arranged over the source/drain region. A second insulator layer is arranged on the spacer and the gate stack, and a conductive contact is arranged in the source/drain region.

Abstract: Provided are a light emitting diode capable of improving contrast, a method for manufacturing a light emitting diode, a light emitting diode display device, and a method for manufacturing a light emitting diode display device. The light emitting diode according to an embodiment comprises a package substrate having an electrode provided therein; a light emitting diode chip provided on the package substrate; a power line electrically connecting the light emitting diode chip to the electrode; and a black layer covering the electrode including a part connected to the power line.

Abstract: An organic light-emitting display apparatus includes a substrate, an inorganic insulation film on the substrate, an organic insulation film on the inorganic insulation film, an organic light-emitting device on the organic insulation film, and an encapsulation unit including a first inorganic film covering the organic light-emitting device and having a first boundary portion contacting the organic insulation film, an organic film covering the first inorganic film and having a second boundary portion contacting the inorganic insulation film, and a second inorganic film covering the organic film and having a third boundary portion contacting the substrate.

Abstract: Disclosed is a shock sensor for detecting an attack on a facility equipped with the shock sensor, comprising: a microprocessor; a micro electromechanical system in communication with the microprocessor, the micro electromechanical system being integrated with a shock sensing device adapted to sense a shock generated by the attack in any direction and a microchip adapted to receive and store at least one parameter from the microprocessor and to analyze a shock signal generated by the shock based on the at least one parameter; and an output device connected with the microprocessor and adapted to output information based on an analysis result of the shock signal. According to the invention, the shock sensor can detect reliably any attack and has a simple circuit arrangement.

Abstract: One illustrative device disclosed herein includes a first pull-up transistor positioned in a first P-type nano-sheet and a first pull-down transistor and a first pass gate transistor positioned in a first N-type nano-sheet. The device further includes a second pull-up transistor positioned in a second P-type nano-sheet and a second pull-down transistor and a second pass gate transistor positioned in a second N-type nano-sheet. The device further includes a read pull-down transistor and a read pass gate transistor positioned in a third N-type nano-sheet. The device also includes a first shared gate structure positioned adjacent the first pull-up transistor and the first pull-down transistor and a second shared gate structure positioned adjacent the second pull-up transistor, the second pull-down transistor and the read pull-down transistor.

Abstract: A system for creating a chromatogram based on a temporal change of a spectrum obtained within a predetermined wavelength range including a target wavelength, the system including a post-correction chromatogram display section for displaying a post-correction chromatogram obtained by multiplying a chromatogram at the designated wavelength by a sensitivity factor obtained by dividing the intensity of the designated-time spectrum at the target wavelength by the intensity of the designated-time spectrum at the designated wavelength, and for changing the display to a post-correction chromatogram corresponding to the latest values of the designated time point and the designated wavelength when one or both of the designated time point and the designated wavelength are changed.

Abstract: An organic luminescence display device includes a substrate, a display unit on the substrate, a thin-film encapsulation layer sealing the display unit, and a stress-reducing layer on the thin-film encapsulation layer, wherein the stress-reducing layer includes an organic molecular film.

Abstract: Various embodiments of light emitting devices, assemblies, and methods of manufacturing are described herein. In one embodiment, a method for manufacturing a lighting emitting device includes forming a light emitting structure, and depositing a barrier material, a mirror material, and a bonding material on the light emitting structure in series. The bonding material contains nickel (Ni). The method also includes placing the light emitting structure onto a silicon substrate with the bonding material in contact with the silicon substrate and annealing the light emitting structure and the silicon substrate. As a result, a nickel silicide (NiSi) material is formed at an interface between the silicon substrate and the bonding material to mechanically couple the light emitting structure to the silicon substrate.

Abstract: A smart water conservation system comprises a flow assembly configured to discharge fluid received from a fluid source to a shower area at a variable flow rate, the flow assembly comprising a flow path and one or more valves positioned along the flow path; a proximity sensor system comprising one or more proximity sensors; and a controller configured to control operation of the smart water conservation system based at least in part on signals received from the proximity sensor system.

Abstract: The present disclosure, in some embodiments, relates to a transistor device having a field plate. The transistor device has a gate electrode disposed over a substrate between a source region and a drain region. One or more dielectric layers are arranged over the gate electrode, and a field plate is arranged over the one or more dielectric layers. The field plate extends from a first outermost sidewall that is directly over an upper surface of the gate electrode to a second outermost sidewall that is between the gate electrode and the drain region and that extends to below the upper surface of the gate electrode.

Abstract: An organic light emitting diode display device comprises a driving thin film transistor including a first semiconductor layer, a gate insulating layer formed on the first semiconductor layer. The device further includes a storage capacitor including a first capacitor electrode electrically coupled to a drain electrode of the driving thin film transistor, a buffer layer formed on the first capacitor electrode, a second semiconductor layer formed on the buffer layer, and a second capacitor electrode formed on the second semiconductor layer and electrically coupled to a gate electrode of the driving thin film transistor. The device also includes an organic light emitting diode connected to the drain electrode of the driving transistor. The gate insulating layer has at least one hole in a region where the gate insulating layer overlaps the second semiconductor layer, thereby exposing the second semiconductor layer to the second capacitor electrode.

Abstract: An organic light emitting element according to an example embodiment of the present disclosure includes: an anode and a cathode facing each other; an emission layer between the anode and the cathode; an electron transfer layer between the emission layer and the cathode; and a buffer layer between the cathode and the electron transfer layer, wherein the buffer layer includes an inorganic metal halide having p-type semiconductor characteristics.

Abstract: Semiconductor structures involving multiple quantum wells provide increased efficiency of UV and visible light emitting diodes (LEDs) and other emitter devices, particularly at high driving current. LEDs made with the new designs have reduced efficiency droop under high current injection and increased overall external quantum efficiency. The active region of the devices includes separation layers configured between the well layers, the one or more separation regions being configured to have a first mode to act as one or more barrier regions separating a plurality of carriers in a quantum confined mode in each of the quantum wells being provided on each side of the one or more separation layers and a second mode to cause spreading of the plurality of carriers across each of the quantum wells to increase an overlap integral of all of the plurality of carriers. The devices and methods of the invention provide improved efficiency for solid state lighting, including high efficiency ultraviolet LEDs.

Abstract: Examples of systems and methods are described herein including sensing devices and pairing sensing devices to containers. In some examples, sensing devices may be used to weigh liquid-containing containers. Responsive to changes in weight readings indicative of a change in a container being weighed by a sensing device, a user may be prompted on a user device to associate updated container size and contents with the sensing device. Systems and methods described herein may facilitate accurate inventory management and menu display of liquid available in containers.

Abstract: A wafer is divided at division starting points along division lines to form a predetermined gap between adjacent chips. Next, that area of a tape to which the wafer is adhered is suction held by a table, after which the table and a ring frame holding section are relatively moved further away from each other to expand the tape in a ring shape between an outer periphery of the wafer and an inner periphery of a ring frame. Thereafter, the table and the ring frame holding section are relatively moved closer to each other to slacken the ring-shaped tape, and the ring-shaped tape is heated by a heater, to heat shrink the tape and to maintain the predetermined gap between the adjacent chips.

Abstract: The present invention relates to methods for analyzing a chemical sample. For instance, the methods herein allow for global analysis of spectroscopy data in order to extract useful chemical properties from complicated multidimensional data. Such analysis can optionally employ data compression to further expedite computer-implemented computation. In particular, the methods herein provide global analysis of data matrices explained by both linear and non-linear terms.

Abstract: A field effect transistor including a dielectric layer on a substrate, a nano-structure material (NSM) layer on the dielectric layer, a source electrode and a drain electrode formed on the NSM layer, a gate dielectric formed on at least a portion of the NSM layer between the source electrode and the drain electrode, a T-shaped gate electrode formed between the source electrode and the drain electrode, where the NSM layer forms a channel of the FET, and a doping layer on the NSM layer extending at least from the sidewall of the source electrode to a first sidewall of the gate dielectric, and from a sidewall of the drain electrode to a second sidewall of the gate dielectric.

Abstract: A system that applies a counteracting voltage or current to a rotating shaft to minimize a grounding voltage signal of the shaft, measures and analyzes the counteracting signal, and provides expert system logic that compares prior learned waveforms and models of baseline, fault, and degradation waveforms to operational waveforms to determine and predict faults and degradation events. Self-learning logic analyzes the operational waveforms to look for changes, and finds or predicts fault and degradation events in relation to archived characteristics of earlier waveforms. It then adds characteristics of predictive waveforms to the database of model waveforms, and updates rules and thresholds in the expert logic based on the found predictors. It may further calculate and continuously refine a counteracting signal waveform to minimize the shaft grounding waveform.