Abstract: Power devices using refilled trenches with permanent charge at or near their sidewalls. These trenches extend vertically into a drift region.

Abstract: Flexible LED assemblies that have coplanar integrated conductive features upon which an LED can be mounted, and methods of making such LED assemblies are described. The flexible LED assembly includes a flexible polymer substrate, a first conductive feature, a second conductive feature and an LED. The first conductive feature is positioned both within the flexible substrate and on a surface of the flexible substrate. The second conductive feature is positioned both within the flexible substrate and on a surface of the flexible substrate. The first and second conductive features are separated by a gap therebetween. The LED is mounted on both the first and second conductive features, and the first and second conductive features are substantially coplanar with one another.

Abstract: A portable electronic device may have acoustic ports such as microphone and speaker ports. Acoustic devices such as microphones and speakers may be associated with the acoustic ports. An acoustic port may have an opening between an interior and exterior of the portable electronic device. The opening may be covered by a metal mesh. An acoustic fabric may be interposed between the metal mesh and the opening. The opening may be formed from a hole in a glass member having outer and inner chamfers. A microphone boot may be provided that forms front and rear radial seals with a housing of the device and a microphone unit respectively. The microphone boot may also form multiple face seals with the microphone unit. A speaker for the speaker port may be enclosed in a sealed speaker enclosure. The speaker enclosure may have a pressure-equalizing vent slit covered with an acoustic mesh.

Abstract: The invention provides a micro LED display panel, by disposing a plurality of active areas (2) on the substrate (1) arranged in an array, and a plurality of micro LEDs (3) uniformly arranged in each active area (2), to achieve high-resolution of micro LED display panel, and by controlling the number of micro LEDs in each active area to effectively control the production cost, while eliminating the screen door effect, to enhance market competitiveness of micro LED display panel.

Abstract: Semiconductor structures and methods of fabricating the same using interrupted deposition processes and multiple laser anneals are provided. The structure includes a high-k gate stack with a high-k bilayer or nanolaminate where a bottom portion of the bilayer is crystallized while a top portion of the bilayer is amorphous.

Abstract: Semiconductor structures and methods of fabricating the same using interrupted deposition processes and multiple laser anneals are provided. The structure includes a high-k gate stack with a high-k bilayer or nanolaminate where a bottom portion of the bilayer is crystallized while a top portion of the bilayer is amorphous.

Abstract: A memory device includes a vertical string of nonvolatile memory cells on a substrate, along with a ground selection transistor extending between the vertical string of nonvolatile memory cells and the substrate. The ground selection transistor can have a current carrying terminal electrically coupled to a channel region of a nonvolatile memory cell in the vertical string of nonvolatile memory cells. The ground selection transistor includes a gate electrode associated with a ground selection line of the memory device. This gate electrode includes: (i) a mask pattern, (ii) a barrier metal layer of a first material extending opposite a sidewall of the mask pattern and (iii) a metal pattern of a second material different from the first material extending between at least a portion of the barrier metal layer and the mask pattern.

Abstract: The invention discloses an array substrate, a display panel, and a display device, where at least one control capacitor is added to a pixel zone, and the control capacitor has a first electrode at a fixed potential, and a second electrode at the same potential as a node between two adjacent transistors, so that when an active gate scan signal is stopped from being loaded on a gate line, the potential of the second electrode of the control capacitor is controlled to be kept at the potential of data signal loaded on a data line, to thereby lower the difference in voltage between the source and the drain of a transistor associated with the second electrode of the control capacitor so as to keep the potential at a connection point of the transistor with a storage capacitor to be the potential of a data signal loaded on the data line.

Abstract: A semiconductor device that includes a bipolar transistor, wherein a third opening, through which a pillar bump and a second wiring line, which is electrically connected to an emitter layer, contact each other, is shifted in a longitudinal direction of the emitter layer away from a position at which the third opening would be directly above the emitter layer. The third opening is arranged, with respect to the emitter layer, such that an end portion of the emitter layer in the longitudinal direction of the emitter layer and the edge of the opening of the third opening are substantially aligned with each other.

Abstract: An ultrathin LED light engine (100) comprises a protective cover (106), a driving circuit board (101), an aluminum substrate (103) and at least one LED module (104). A double-sided high-viscosity heat conducting plate (102) covers the first surface of the aluminum substrate (103) to fix the driving circuit board (101); the at least one LED module (104) is fixed on the first surface and insulated from the aluminum substrate (103) by means of an insulating layer (200) on the first surface; a conductive circuit for electrically connecting the at least one LED module (104) and the driving circuit board (101) is arranged on the insulating layer (200); and the size of the aluminum substrate (103) at least at the local peripheral outer area is greater than that of the driving circuit board (101), so that the double-sided high-viscosity heat conducting plate (102) on the first surface at least locally fixes the protective cover (106).

Abstract: A magnetic memory device can include a first electrode and a first magnetic structure that is spaced apart from the first electrode, where the first magnetic structure can include a magnetic pattern therein. An oxidized non-magnetic pattern can be located between the first magnetic structure and the first electrode, where the oxidized non-magnetic pattern can include a non-metallic element having a standard free energy of oxide formation that is less than about that of a standard free energy of oxide formation of Fe.

Abstract: A method and structure for a PLCSP (Package Level Chip Scale Package) MEMS package. The method includes providing a MEMS chip having a CMOS substrate and a MEMS cap housing at least a MEMS device disposed upon the CMOS substrate. The MEMS chip is flipped and oriented on a packaging substrate such that the MEMS cap is disposed above a thinner region of the packaging substrate and the CMOS substrate is bonding to the packaging substrate at a thicker region, wherein bonding regions on each of the substrates are coupled. The device is sawed to form a package-level chip scale MEMS package.

Abstract: Flip chip LEDs comprise a transparent carrier and an active material layer such as AlInGaP bonded to the carrier and that emits light between about 550 to 650 nm. The flip chip LED has a first electrical terminal in contact with a first region of the active material layer, and a second electrical terminal in contact with a second region of the active material layer, wherein the first and second electrical terminals are positioned along a common surface of the active material layer. Chip-on-board LED packages comprise a plurality of the flip chip LEDs with respective first and second electrical terminals interconnected with one another. The package may include Flip chip LEDs that emit light between 420 to 500 nm, and the flip chip LEDs are covered with a phosphorus material comprising a yellow constituent, and may comprise a transparent material disposed over the phosphorus material.

Abstract: A display apparatus and a fabricating method thereof are provided. The display apparatus includes a substrate, a light emitting diode, a first bump, a first insulating layer and a second insulating layer. The light emitting diode has a first surface and a second surface opposite each other, wherein the first surface faces the substrate. The light emitting diode is bonded to the substrate through the first bump. The first insulating layer is disposed on a periphery of the first bump and the light emitting diode, and contacts the first bump and the first surface. The second insulating layer is disposed on the substrate and surrounds at least a portion of the first insulating layer.

Abstract: A non-polar, III-Nitride semiconductor fin field-effect transistor (hereafter “finFET”) includes both a fin and a Si(110) silicon substrate, the silicon substrate having a support surface parallel to a Si(110) plane of the silicon substrate. The fin includes a III-Nitride crystalline layer grown along its c-direction, so as to have sidewalls that are parallel to m and a planes of the III-Nitride crystalline layer. The c-direction is parallel to a Si<111> direction of the silicon substrate, such that two opposite ones of said sidewalls are parallel to the support surface of the silicon substrate. Related devices and methods of fabrication are also provided.

Abstract: Manufacture of multi junction solar cells, and devices thereof, are disclosed. The architectures are also adapted to provide for a more uniform and consistent fabrication of the solar cell structures, leading to improved yields, greater efficiency, and lower costs. Certain solar cells may be from a different manufacturing processes and further include one or more compositional gradients of one or more semiconductor elements in one or more semiconductor layers, resulting in a more optimal solar cell device.

Abstract: Embodiments of the invention include a wavelength-converting material defined by AE3?x1?y+zRE3?x2+y?z[Si9?wAlw(N1?yCy)[4](N16?z?wOz+w)[2]]Eux1,Cex2, where AE=Ca, Sr, Ba; RE=Y, Lu, La, Sc; 0?x1?0.18; 0?x2?0.2; x1+x2>0; 0?y?1; 0?z?3; 0?w?3.

Abstract: A light emitting device includes: a ceramic substrate; a plurality of LED chips; a printed resistor(s) connected in parallel with the plurality of LED chips; a dam resin made of a resin having a low optical transmittance; a fluorescent-material-containing resin layer; and an anode-side electrode and a cathode-side electrode, (a) which are provided on a primary surface of the ceramic substrate so as to face each other along a first direction on the primary surface and (b) which are disposed below at least one of the dam resin and the fluorescent-material-containing resin layer. With the configuration in which a plurality of LEDs, which are connected in a series-parallel connection, are provided on a substrate, it is possible to provide a light emitting device which can achieve restraining of luminance unevenness and an improvement in luminous efficiency.

Abstract: According to embodiments there is provided a magneto-resistive sensor module. The sensor module may comprise: an integrated circuit; magneto-resistive sensor elements arranged as a bridge circuit monolithically integrated on the integrated circuit; and a stress buffer layer arranged between the integrated circuit and the magneto-resistive sensor element. There is also a provided a method of manufacturing the magneto-resistive sensor module.

Abstract: Embodiments of the present invention relate to a light emitting device package having uniform color characteristics, wherein the light emitting device package includes: a substrate including first and second lead frames; at least two light emitting devices disposed on the substrate and electrically connected to the first and second lead frames; an integrated wavelength conversion film disposed on the at least two light emitting devices and including a first region which overlaps the light emitting devices and a second region other than the first region; at least one recess which passes through the wavelength conversion film in a region corresponding to a gap between the adjacent light emitting devices; and a lens disposed on the substrate to cover the light emitting devices and the first and second lead frames.