Abstract: A method may include forming in a substrate a first array of a first material of first linear structures, interspersed with a second array of a second material, of second linear structures, the first and second linear structures elongated along a first axis. The method may include generating a chop pattern in the first layer, comprising a third linear array, interspersed with a fourth linear array. The third and fourth linear arrays may be elongated along a second axis, forming a non-zero angle of incidence with respect to the first axis. The third linear array may include alternating portions of the first and second material, while the fourth linear array comprises an array of cavities, arranged within the patterning layer. The method may include elongating a first set of cavities along the first axis, to form a first set of elongated cavities bounded by the first material.

Abstract: A semiconductor device includes a first electrode, a second electrode, a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type; a third semiconductor layer of the first conductivity type; a first active region; and a third electrode. The first semiconductor layer is located between the first electrode and the second electrode. The second semiconductor layer is located above the first semiconductor layer. The first active region is next to the second semiconductor layer in a second direction. The first active region includes a first upper portion and a first upper portion. An average value of a width in the second direction of the first lower portion is greater than an average value of a width in the second direction of the first upper portion. The third semiconductor layer is electrically connected with the second electrode.

Abstract: A display device may include a substrate in which an opening is defined, a first disconnected line disposed on the substrate, the first disconnected line extending along a first direction and including a first disconnected portion and a second disconnected portion, and the first disconnected portion and the second disconnected portion being disconnected from each other by the opening, and a first bypass line disposed on the substrate in a different layer from the first disconnected line, the first bypass line bypassing the opening and connecting the first disconnected portion and the second disconnected portion to each other.

Abstract: A semiconductor device of an embodiment includes: a first and second semiconductor regions of a first conductivity type; a third semiconductor region of a second conductivity type disposed between the first and second semiconductor regions; a fourth semiconductor region of the first conductivity type disposed below the first semiconductor region; a fifth semiconductor region of the first conductivity type disposed below the second semiconductor region; a first region containing carbon disposed between the first and fourth semiconductor regions; a second region containing carbon disposed between the second and fifth semiconductor regions; a third region disposed between the first and second regions; the first and second regions having a first and second carbon concentrations respectively, the third region not containing carbon or having a lower carbon concentration than the first and second carbon concentrations in a portion below an end of a lower face of a gate electrode.

Abstract: A semiconductor package includes a substrate formed of electrically insulating material and having a die mounting surface, a first semiconductor die embedded within the substrate and comprising a first conductive terminal that faces the die mounting surface, a second semiconductor die mounted on the die mounting surface and comprising a first conductive terminal that faces and is spaced apart from the die mounting surface, and a first electrical connection that directly connects the first conductive terminals of the first and second semiconductor dies together, wherein the second semiconductor die partially overlaps with the first semiconductor die.

Abstract: In some embodiments, the present disclosure relates to an integrated chip that includes a lower conductive structure arranged over a substrate. An etch stop layer is arranged over the lower conductive structure, and a first interconnect dielectric layer is arranged over the etch stop layer. The integrated chip further includes an interconnect via that extends through the first interconnect dielectric layer and the etch stop layer to directly contact the lower conductive structure. A protective layer surrounds outermost sidewalls of the interconnect via.

Abstract: Various embodiments of the present application are directed towards an integrated circuit (IC) chip comprising a front-end-of-line (FEOL) through semiconductor-on-substrate via (TSV), as well as a method for forming the IC chip. In some embodiments, a semiconductor layer overlies a substrate. The semiconductor layer may, for example, be or comprise a group III-V semiconductor and/or some other suitable semiconductor(s). A semiconductor device is on the semiconductor layer, and a FEOL layer overlies the semiconductor device. The FEOL TSV extends through the FEOL layer and the semiconductor layer to the substrate at a periphery of the IC chip. An intermetal dielectric (IMD) layer overlies the FEOL TSV and the FEOL layer, and an alternating stack of wires and vias is in the IMD layer.

Abstract: Disclosed is a 3D architecture of ternary content-addressable memory (TCAM), comprising a first transistor layer, a second transistor layer, a third transistor layer and a fourth transistor layer. The first transistor layer and the second transistor layer are disposed on a first plane. The third transistor layer and the fourth transistor layer are respectively stacked on the first transistor layer and the second transistor layer in a second direction perpendicular to the first plane. Two of the first transistor layer, the second transistor layer, the third transistor layer and the fourth transistor layer are a first transistor and a second transistor of a first memory cell of the TCAM. The other two of the first transistor layer, the second transistor layer, the third transistor layer and the fourth transistor layer are a first transistor and a second transistor of a second memory cell of the TCAM.

Abstract: A device includes a fin extending from a substrate, a gate stack over and along sidewalls of the fin, a gate spacer along a sidewall of the gate stack, and an epitaxial source/drain region in the fin and adjacent the gate spacer. The epitaxial source/drain region includes a first epitaxial layer on the fin, the first epitaxial layer including silicon, germanium, and arsenic, and a second epitaxial layer on the first epitaxial layer, the second epitaxial layer including silicon and phosphorus, the first epitaxial layer separating the second epitaxial layer from the fin. The epitaxial source/drain region further includes a third epitaxial layer on the second epitaxial layer, the third epitaxial layer including silicon, germanium, and phosphorus.

Abstract: Techniques for trapping quasiparticles in superconductor devices are provided. A superconductor device can comprise a substrate layer. The superconductor device can further comprise a first superconductor layer composed of a first superconductor material, on a first surface of a substrate layer. The superconductor device can further comprise a trapping material buried in the first superconductor layer, wherein the trapping material is formulated to trap quasiparticles.

Abstract: A semiconductor structure and a method for forming the semiconductor structure are provided. The method includes: providing a substrate; forming a dummy gate structure including a dummy gate dielectric layer, an initial dummy gate electrode layer, and a first sidewall spacer; forming an isolation layer having a surface lower than or coplanar with the dummy gate structure; forming a dummy gate electrode layer having a surface lower than the isolation layer, and forming a first opening to expose a portion of the first sidewall spacer; forming a modified sidewall spacer from the exposed first sidewall spacer; forming a second opening by removing the dummy gate electrode layer; forming a third opening by removing the dummy gate dielectric layer and the modified sidewall spacer, where top of the third opening has a size larger than bottom of the third opening; and forming a gate structure in the third opening.

Abstract: A semiconductor device structure, along with methods of forming such, are described. The semiconductor device structure includes a device, a conductive structure disposed over the device, and the conductive structure includes a sidewall having a first portion and a second portion. The semiconductor device structure further includes a first spacer layer including a third portion and a fourth portion, the third portion surrounds the first portion of the sidewall, and the fourth portion is disposed on the conductive structure. The semiconductor device structure further includes a first dielectric material surrounding the third portion, and an air gap is formed between the first dielectric material and the third portion of the first spacer layer. The first dielectric material includes a first material different than a second material of the first spacer layer, and the first dielectric material is substantially coplanar with the fourth portion of the first spacer layer.

Abstract: Disclosed is a method for forming a crystalline protective polysilicon layer which does not create defective voids during subsequent processes so as to provide effective protection to devices underneath. In one embodiment, a method for forming a semiconductor device, includes: depositing a protective coating on a first polysilicon layer; forming an epitaxial layer on the protective coating; and depositing a second polysilicon layer over the epitaxial layer, wherein the protective coating comprises a third polysilicon layer, wherein the third polysilicon layer is deposited at a first temperature in a range of 600-700 degree Celsius, and wherein the third polysilicon layer in the protect coating is configured to protect the first polysilicon layer when the second polysilicon layer is etched.

Abstract: A method includes forming a dummy gate structure over a wafer. Gate spacers are formed on either side of the dummy gate structure. The dummy gate structure is removed to form a gate trench between the gate spacers. A gate dielectric layer is formed in the gate trench. A gate electrode is formed over the gate dielectric layer. Forming the gate dielectric layer includes applying a first bias to the wafer. With the first bias turned on, first precursors are fed to the wafer. The first bias is turned off. After turning off the first bias, second precursors are fed to the wafer.

Abstract: The present disclosure provides a semiconductor structure. The semiconductor structure includes a substrate including a well region and an adjustment region over the well region. An isolation structure is disposed over the substrate and at least partially surrounds the well region and the adjustment region. An epitaxial layer is disposed over the adjustment region and surrounded by the isolation structure. A gate structure is disposed on the epitaxial layer. The present disclosure also provides a method for forming a semiconductor structure.

Abstract: An integrated circuit (IC) package comprises a substrate comprising a dielectric and a thermal conduit that is embedded within the dielectric. The thermal conduit has a length that extends laterally within the dielectric from a first end to a second end. An IC die is thermally coupled to the first end of the thermal conduit. The IC die comprises an interconnect that is coupled to the first end of the thermal conduit. An integrated heat spreader comprises a lid over the IC die and at least one sidewall extending from the edge of the lid to the substrate that is thermally coupled to the second end of the thermal conduit.

Abstract: An apparatus is provided, which includes a stack of a first plurality of layers interleaved with a second plurality of layers. In an example, the first plurality of layers includes conductive material, and the second plurality of layers includes insulating material. In an example, the first plurality of layers includes an upper layer and lower layer. A first via may extend through at least a portion of the stack, where the first via may be in contact with the upper layer and the lower layer. A second via may extend through at least a portion of the stack, where the second via may be isolated from the upper layer and lower layer.

Abstract: The present disclosure is related to a method of forming a pattern, including the steps of: providing a structure including a substrate and a target layer, in which the target layer is disposed on the substrate, and the target layer includes a central area and a periphery area; forming a plurality of core patterns and a linear spacer pattern on the central area, in which a width of the linear spacer pattern is wider than 50 nm; covering a photoresist on the periphery area; removing a portion of the central area not covered by the plurality of core patterns and not covered by the linear spacer pattern to form a pattern in the central area, and removing the photoresist, the linear spacer pattern and the plurality of core patterns to expose the pattern.

Abstract: Methods of cutting gate structures and fins, and structures formed thereby, are described. In an embodiment, a substrate includes first and second fins and an isolation region. The first and second fins extend longitudinally parallel, with the isolation region disposed therebetween. A gate structure includes a conformal gate dielectric over the first fin and a gate electrode over the conformal gate dielectric. A first insulating fill structure abuts the gate structure and extends vertically from a level of an upper surface of the gate structure to at least a surface of the isolation region. No portion of the conformal gate dielectric extends vertically between the first insulating fill structure and the gate electrode. A second insulating fill structure abuts the first insulating fill structure and an end sidewall of the second fin. The first insulating fill structure is disposed laterally between the gate structure and the second insulating fill structure.

Abstract: An integrated circuit assembly including a substrate having a surface including at least one area including contact points operable for connection with an integrated circuit die; and at least one ring surrounding the at least one area, the at least one ring including an electrically conductive material. A method of forming an integrated circuit assembly including forming a plurality of electrically conductive rings around a periphery of a die area of a substrate selected for attachment of at least one integrated circuit die, wherein the plurality of rings are formed one inside the other; and forming a plurality of contact points in the die area.