Abstract: A memory system includes a plurality of memory dies respectively having at least one channel, a controller configured to control the plurality of memory dies, and a base die configured for interfacing signal and data transmissions between the plurality of memory dies and the controller. The controller is configured to remap a logical channel address of the most frequently used channel to a physical channel address of a channel having a lowest temperature value to transmit the remapped physical channel address to the base die.

Abstract: A memory device comprises a memory array that includes memory cells and a memory controller operatively coupled to the memory array. The memory controller includes an oscillator circuit, internal memory, a processor core coupled to the oscillator circuit and the internal memory, and configured to load operating firmware during a boot phase of the memory device, voltage detector circuitry configured to detect a decrease in a circuit supply voltage of the memory controller during the boot phase, and logic circuitry configured to halt operation of the oscillator circuit and power down the processor core and the internal memory during the boot phase in a low power mode in response to detecting the decrease in the circuit supply voltage.

Abstract: Methods, systems, and devices related to write broadcast operations associated with a memory device are described. In one example, a memory device in accordance with the described techniques may include a memory array, a sense amplifier array, and a signal development cache configured to store signals (e.g., cache signals, signal states) associated with logic states (e.g., memory states) that may be stored at the memory array (e.g., according to various read or write operations). The memory device may enable read broadcast operations. A read broadcast may occur from the memory array to multiple locations of the signal development cache, for example via one or more multiplexers.

Abstract: The present disclosure relates to adjusting a reading speed of a memory system. A method for adjusting a reading speed of a memory system, including: generating an alternating sequence signal in which high levels and low levels appear alternately, associated with an output delay of the memory system; generating a reference signal having a predetermined frequency and a reference delay; generating a comparison result signal indicating a range of a difference between an output delay and the reference delay based on an alternating sequence signal and a reference signal; and determining whether a value indicated by a comparison result signal is a predetermined value, so as to adjust the reading speed of the memory system based on a determination result.

Abstract: The present technology relates to an electronic device. According to the present technology, a memory device having reduced latency includes a plurality of memory cells, an optimum read voltage information storage configured to store optimum read voltage information determined according to a cell count value, which is the number of memory cells read as a first memory cell based on data read from the plurality of memory cells among the plurality of memory cells, and a read voltage controller configured to calculate a cell count value corresponding to a default read voltage based on the data read from the plurality of memory cells using the default read voltage, in response to an optimum read voltage setting command input from a memory controller, and generate a first optimum read voltage based on the cell count value corresponding to the default read voltage and the optimum read voltage information.

Abstract: An apparatus is provided that includes a plurality of data arrays each comprising first memory cells, a plurality of read reference arrays each comprising second memory cells, a plurality of write reference arrays each comprising third memory cells, an access block comprising a memory cell from each of the plurality of data arrays, each of the plurality of read reference arrays, and each of the plurality of write reference arrays, and a memory controller. The memory controller is configured to determine a read threshold voltage to compensate a drift of a threshold voltage of the first memory cells, wherein the read threshold voltage is determined based on threshold voltages of a plurality of second memory cells, and a read offset voltage to compensate an offset voltage of the first memory cells, wherein the read offset voltage is determined based on offset voltages of a plurality of second memory cells.

Abstract: A neural network computation circuit includes in-area multiple-word line selection circuits that are provided in one-to-one correspondence to a plurality of word line areas into which a plurality of word lines included in a memory array are logically divided. Each of the in-area multiple-word line selection circuits sets one or more word lines in a selected state or a non-selected state, and includes a first latch and a second latch provided for each word line.

Abstract: A memory system includes a plurality of memory dies respectively having at least one channel, a controller configured to control the plurality of memory dies, and a base die configured for interfacing signal and data transmissions between the plurality of memory dies and the controller. The controller is configured to remap a logical channel address of the most frequently used channel to a physical channel address of a channel having a lowest temperature value to transmit the remapped physical channel address to the base die.

Abstract: Memory devices, systems including memory devices, and methods of operating memory devices are described, in which memory devices are configured to monitor word line characteristics. In one embodiment, the memory device includes a memory array including a word line (e.g., a local word line) and a word line driver coupled thereto. When the memory device activates the word line driver, the memory device may generate a diagnostic signal in response to the word line voltage reaching a threshold. Further, the memory device may generate a reference signal to compare the diagnostic signal with the reference signal. In some cases, the memory device may generate an alert signal based on comparing the diagnostic signal with the reference signal if the diagnostic signal indicates a symptom of degradation in the word line characteristics. The memory device may implement certain preventive and/or precautionary measures upon detecting the symptom.

Abstract: A memory device according to some aspects of the inventive concepts includes a memory cell array including a plurality of banks, at least one Processing Element (PE) connected to at least one bank selected from the plurality of banks, and a control logic configured to control an active operation in which wordlines included in each of the plurality of banks is activated, and configured to control a refresh operation in which at least one bank is refreshed, based on a PE enable signal configured to selectively enable the at least one PE.

Abstract: A method includes replacing an address of a first normal memory cell in a first column of a first memory block with a destination address that is an address of a second normal memory cell in a second column of the first memory block, and reassigning the address of the second normal memory cell in the second column of the first memory block to an address of a first redundancy memory cell in a redundancy block of the memory device.

Abstract: A self-timed sensing architecture for reading a selected cell in an array of non-volatile cells is disclosed. The sensing circuitry generates a signal when a stable sensing value has been obtained from the selected cell, where the stable sensing value indicates the value stored in the selected cell. The signal indicates the end of the sensing operation, causing the stable sensing value to be output as the result of the read operation.

Abstract: A semiconductor device includes a first word line configured to perform a writing operation or a programing operation, a second word line configured to perform a read operation, a first switching device including a first gate electrode and a first node, a second switching device comprising a second gate electrode and a second node, an electrical fuse (e-fuse) disposed between the first node and the second node, and a diode coupled to the first node and the first word line, wherein the first gate electrode and the second gate electrode are coupled to the second word line.

Abstract: A memory system includes a stacked memory device and a controller. The stacked memory device includes a base die and a plurality of memory dies stacked on the base die. Each of the plurality of memory dies has a plurality of channels, and the base die is configured to function as an interface for transmitting signals and data of the pluralities of channels. The controller controls the stacked memory device such that first and second data move control operations are sequentially performed to transmit moving data from a target channel of the pluralities of channels to a destination channel of the pluralities of channels. The first data move control operation is performed to store the moving data in the target channel into the base die, and the second data move control operation is performed to write the moving data stored in the base die into the destination channel.

Abstract: A memory device includes a substrate, a controller disposed on the substrate and providing an external interface, and a plurality of flash memory dies connected to the controller through an internal interface. The external interface includes at least a bypass pin, a mode selection pin, and a data pin, and is used by an external host to direct access the plurality of flash memory dies through the controller. The bypass pin is used to enable the controller to enter in a direct access state in which the mode selection pin and the data pin are operational; and the mode selection pin is used to trigger the controller to receive a mode code on the data pin and to receive a mode code value on the data pin. The mode code indicates one of a plurality of predetermined input-output modes of the controller in the direct access state, and the mode code value determining information under the predetermined input-output mode indicated by the mode code.

Abstract: A memory device supporting multi-address read operations improves throughput on a bi-directional serial port. The device includes a memory array and an input/output port having an input mode and an output mode. The input/output port has at least one signal line used alternately in both the input and output modes. A controller includes logic configured to execute a multi-address read operation in response to receiving a read command on the input/output port in the input mode, the multi-address read operation including receiving a first address and a second address using the at least one signal line in the input mode before switching to the output mode, switching to the output mode and outputting data identified by the first address using the at least one signal line.

Abstract: Data is synchronized when transmitted from a circuit operated at first frequency to another circuit operated at second frequency. A synchronization method includes storing data write pointers in a line, storing data input from a source at first frequency at a location in a data buffer designated by the write pointer at one end of the line, taking out the write pointer at the one end from the line to store it in the synchronization buffer, synchronizing a validation signal input from the input source at first frequency to second frequency, reading out the write pointer stored in the synchronization buffer when the validation signal is synchronized, adding completion information that indicates completion of synchronization to the data stored at the location in the data buffer designated by the read out write pointer, and reading out, from the data buffer, the data to which the completion information is added.

Abstract: Fuse programming circuits, devices and methods. In some embodiments, a fuse circuit can include a fuse pad configured to receive a voltage, a fuse having a first end coupled to the fuse pad and a second end coupled to a switching element configured to enable a current to pass from the fuse pad to a ground potential.

Abstract: According to one embodiment, a memory system includes a plurality of memory packages, on-die termination (ODT) circuits, and a controller. The plurality of memory packages are coupled by a common bus and arranged in groups, each group includes a pair of memory packages facing each other, and each memory package includes a plurality of memory chips. The ODT circuits are respectively disposed in the memory packages. The ODT circuits are on/off controlled based on an asserted state of a chip enable signal CEn acquired using a periodic signal of at least two cycles.

Abstract: An integrated circuit device includes a plurality of word lines, a string selection line structure stacked on the plurality of word lines, and a plurality of channel structures extending in a vertical direction through the plurality of word lines and the string selection line structure. The string selection line structure includes a string selection bent line including a lower horizontal extension portion extending in a horizontal direction at a first level higher than the plurality of word lines, an upper horizontal extension portion extending in the horizontal direction at a second level higher than the first level, and a vertical extension portion connected between the lower horizontal extension portion and the upper horizontal extension portion.