Abstract: An integrated chip includes a first well region, second well region, and third well region disposed within a substrate. The second well region is laterally between the first and third well regions. An isolation structure is disposed within the substrate and laterally surrounds the first, second, and third well regions. A floating gate overlies the substrate and laterally extends from the first well region to the third well region. A dielectric structure is disposed under the floating gate. A bit line write region is disposed within the second well region and includes source/drain regions disposed on opposite sides of the floating gate. A bit line read region is disposed within the second well region, is laterally offset from the bit line write region by a non-zero distance, and includes source/drain regions disposed on the opposite sides of the floating gate.

Abstract: Systems and methods are provided for specifying safety rules for robotic devices. A computing device can determine information about any actors present within a predetermined area of an environment. The computing device can determine a safety classification for the predetermined area based on the information. The safety classification can include: a low safety classification if the information indicates zero actors are present within the predetermined area, a medium safety classification if the information indicates any actors are present within the predetermined area all are of a predetermined first type, and a high safety classification if the information indicates at least one actor present within the predetermined area is of a predetermined second type. After determining the safety classification for the predetermined area, the computing device can provide a safety rule for operating within the predetermined area to a robotic device operating in the environment.

Abstract: Memory devices, systems and methods include a buffer interface to translate high speed data interactions on a host interface side into slower, wider data interactions on a DRAM interface side. The slower, and wider DRAM interface may be configured to substantially match the capacity of the narrower, higher speed host interface. In some configurations, the buffer interface may be configured to provide multiple sub-channel interfaces each coupled to one or more regions within the memory structure and configured to facilitate data recovery in the event of a failure of some portion of the memory structure. Selected memory devices, systems and methods include an individual DRAM die, or one or more stacks of DRAM dies coupled to a buffer die.

Abstract: A sintering press to sinter electronic components on a substrate comprises a pressing unit comprising a multi-rod cylinder having a front head and a rear head which jointly delimit a compression chamber. In the front head, presser rods parallel and independent of each other are slidingly supported. Each presser rod is coaxial and barycentric to a respective electronic component to be sintered and has a thrust section proportional to the force to be applied to the respective electronic component. In the compression chamber a sealing membrane extends, which is deformed so as to abut against the presser rods for transferring the sintering pressure on each presser rod.

Abstract: An apparatus and method for hybrid software-hardware coherency.

Abstract: A method and system are provided for handling a blockchain network based file storage system including a plurality of electronic devices.

Abstract: A processing device of a memory sub-system is configured to select, during a first period of time of a plurality of predetermined periods of time, a first voltage bin of a plurality of voltage bins associated with a memory device, wherein each bin of the plurality of voltage bins is associated with a corresponding set of read level offsets; perform, during a second period of time, a read operation of a block of the memory device, using a first set of read level offsets associated with the first voltage bin; determine a trigger metric associated with the first set of read level offsets; and responsive to determining that the trigger metric fails to satisfy a predefined condition, select a second voltage bin, wherein a second set of read level offsets associated with the second voltage bin is associated with a second trigger metric that satisfies the predefined condition.

Abstract: A storage device includes a first die and a second die. The first die is stacked on the second die. The first die includes a plurality of die regions partitioned by dicing regions. Each of the die regions includes a memory cell array. The second die includes a circuit configured to process reading of data from and writing of data to, memory cells in the memory cell arrays in each of the die regions of the first die.

Abstract: Semiconductor devices and methods are provided. A semiconductor device of the present disclosure includes a bias source, a memory cell array including a first region adjacent to the bias source and a second region away from the bias source, and a conductive line electrically coupled to the bias source, a first memory cell in the first region and a second memory cell in the second region. The first memory cell is characterized by a first alpha ratio and the second memory cell is characterized by a second alpha ratio smaller than the first alpha ratio.

Abstract: An example of an apparatus includes a plurality of memory cells. At least a portion of the memory cells have a bottom electrode with each bottom electrode being at least partially electrically isolated from remaining ones of the bottom electrodes. At least one resistive interconnect electrically couples two or more of the bottom electrodes. The resistive interconnect is arranged to discharge at least a portion of excess charge from the two or more bottom electrodes. Additional apparatuses and methods of forming the apparatuses are disclosed.

Abstract: Provided is a mask changing unit for a laser bonding apparatus, and more particularly, a mask changing unit for a laser bonding apparatus, wherein the mask changing unit supplies or changes a mask to or in the laser bonding apparatus for bonding a semiconductor chip to a substrate by using a laser beam. The mask changing unit for a laser bonding apparatus, a plurality of masks that are used in performing laser bonding of a semiconductor chip to a substrate while the semiconductor chip is being pressed may be easily supplied to the laser bonding apparatus or changed in the laser bonding apparatus.

Abstract: A bonding and indexing apparatus has a first index head to move a substrate in an indexing direction from a first position to a second position and a second index head to move the substrate in an indexing direction from the second position to a third position. The first and/or second index head has a bonding element to effect a bonding process between the substrate and an element disposed against the substrate so that bonding and movement in the indexing direction is implemented simultaneously by the first index head and/or bonding and movement in the indexing direction is implemented simultaneously by the second index head.

Abstract: A memory system includes a memory device including an interface circuit and a semiconductor memory, and a controller to generate a command for controlling the memory device. The interface circuit receives the command from the controller; determines whether the command is for the semiconductor memory or the interface circuit; and when it is determined that the command is for the interface circuit, performs a blocking operation to block transfer of the command between the interface circuit and the semiconductor memory and performs an internal operation of the interface circuit. The internal operation includes a signal controlling operation, a training operation, a read operation, an on-die termination operation, a ZQ calibration operation, or a driving force control operation.

Abstract: A semiconductor memory device includes at least an OTP cell having a transistor and a PN junction diode. The OTP cell further includes a substrate having a first conductivity type, and a source and a drain in the substrate. The source includes a source doping region having the first conductivity type. The drain includes a drain doping region having a second conductivity type opposite to the first conductivity type. A gate is disposed on the substrate between the source and the drain. The source further includes a pocket doping region having the second conductivity type under the gate. The pocket doping region and the source doping region constitute the PN junction diode.

Abstract: A semiconductor device includes an error check and scrub (ECS) command generation circuit and an ECS control circuit. The ECS command generation circuit generates an internal refresh command after generating an ECS command based on a refresh command and an idle signal. The ECS control circuit generates an ECS mode signal that is activated during an ECS operation based on the ECS command. The ECS control circuit also generates an ECS active command, an ECS read command, and an ECS write command for performing the ECS operation based on the ECS command.

Abstract: A data storage apparatus may include a data storage device including at least one data die to store first data, and at least one parity die to store second data, third data, and a chip-kill parity, where the at least one data die and the at least one parity die are connected to a channel, and controller in communication with the data storage device and configured to receive a write request for the first data and the second data from a host that is in communication with the data storage device through the channel to generate the chip-kill parity from the first data and the second data. The controller is further configured to read the third data from the parity die and provide the third data to the host upon receipt of a read request for the third data from the host while the chip-kill parity is being updated based on the first data.

Abstract: A device has memory cells located within a cell deck of the device. The device includes functional vias within the cell deck, and one or more floating vias within the cell deck. The functional vias are electrically coupled to conductive structures of the device and the one or more floating vias have at least one end electrically isolated from the conductive structures of the device. Methods of forming a device may include forming memory cells in a cell deck, and forming floating vias in a dielectric material adjacent to the memory cells. An overlying mask material is removed from the dielectric material, and at least some memory cells are protected from mechanical damage during the removal of the overlying mask material with the floating vias. Electronic systems may include such devices.

Abstract: A method of programming a resistive memory device, and a corresponding resistive memory device, which includes the resistive memory device, in response to a write command, applying a write pulse to a selected memory cell arranged in a region where a selected word line intersects with a selected bit line; and after the applying the write pulse, applying a dummy pulse to at least one unselected memory cell. The at least one unselected memory cell is connected to at least one of the selected word line, the selected bit line, a first word line adjacent to the selected word line, and a first bit line adjacent to the selected bit line.

Abstract: A processing device in a memory system determines whether a number of pending memory commands satisfies a threshold criterion. Responsive to the number of pending memory commands satisfying the threshold criterion, the processing device initiates a first mode of operation for the system and writes, in the first mode of operation, data corresponding to at least a subset of the number of pending memory commands to a first portion of the memory device.

Abstract: Systems and methods are provided for specifying safety rules for robotic devices. A computing device can determine information about any actors present within a predetermined area of an environment. The computing device can determine a safety classification for the predetermined area based on the information. The safety classification can include: a low safety classification if the information indicates zero actors are present within the predetermined area, a medium safety classification if the information indicates any actors are present within the predetermined area all are of a predetermined first type, and a high safety classification if the information indicates at least one actor present within the predetermined area is of a predetermined second type. After determining the safety classification for the predetermined area, the computing device can provide a safety rule for operating within the predetermined area to a robotic device operating in the environment.