Abstract: An array of bottom-emitting VCSELs, with its substrate still intact, is tested by means of a probe that includes an optoelectronic array, which is aligned and coupled to the top surface of the VCSEL array. The probe is aligned to the VCSEL array just once. The optoelectronic array includes driver circuits for energizing the VCSELs and the photodetection circuits in a predetermined sequence for detecting the back emission that leaks through the top mirror of each VCSEL. In another embodiment, this probe and method are applied to testing bottom-emitting VCSELs one at a time. The VCSELs may discrete devices or part of an array. In accordance with another aspect of our invention, an array of bottom-emitting VCSELs, with its substrate still in intact, is tested by means of a probe that includes separate electronic and photodetection arrays. The probe is aligned to the VCSEL array just once.

Abstract: An apparatus for measuring decay in intensity of electromagnetic radiation passing through a radiation-absorbent sample due to absorption of radiation by the sample is disclosed which includes a source of electromagnetic radiation having a wavelength within an absorption band of the sample and a plurality of partially-reflective specular surfaces which are spaced apart from each other along a predetermined path through the sample, each specular surface separating the incident radiation into a reflected part which follows the predetermined path and an unreflected path, the value of the decay being derived from intensity measurements of the unreflected parts made at different positions along the predetermined path.

Abstract: A method and an apparatus for surface configuration measurement of the present invention use stereoscopic lattice type of moiré optics as testing optics. The moiré optics accurately shifts moiré fringes of particular fringe order by a preselected phase without any shift error. A line sensor camera, which is a specific form of a camera, limits a measurement range to the vicinity of the particular fringe order. The camera outputs at least three moiré image data shifted in phase. A phase shifting method can therefore be easily applied to the stereoscopic lattice type of moiré optics without giving any consideration to the accurate phase shift of the entire fringe orders. The apparatus can measure the surface configuration of a work with high accuracy.

Abstract: A confocal wafer inspection system including: (a) a table to carry a wafer for inspection, the table having two vertical degrees of freedom to enable XY axis movements; (b) a movement device for moving the table along the degrees of freedom; (c) a confocal height measurement system, perpendicular to the table, for measuring the range to a point on a surface of the wafer and for enabling to recognize changes in surface altitude while the wafer moves with the table; and (d) a computer operative for: (i) holding a bumps map of the wafer; (ii) controlling the movement device; (iii) moving the table so that the measuring point of the confocal height measurement system crosses each bump of the wafer; (iv) storing a height profile of each bump; (v) comparing the height profiles or checking each height profile according to predetermined criteria or both; and (vi) enabling a results output. The invention also relates to a method for confocal wafer inspection.

Abstract: Inspection system and method for high-throughput inspection, the system and method is capable to generate and sense transmitted and/or reflected short duration beams. According to one embodiment of the invention the transmitted and reflected short duration beams are generated and sensed simultaneously thus provide a reflected image and a transmitted image simultaneously. The reflected and transmitted short duration radiation beams are manipulated either in the frequency domain or are distinctly polarized such that they are directed to the appropriate area sensors. According to another aspect of the invention the system changes the manipulation of a short duration beam of radiation to selectively direct the short duration beam to distinct area sensors.

Abstract: Disclosed is a process for the detection of marked components of a composite article. The present invention relates to detecting the presence, position, concentration and/or distribution of one or more components in a composite article, and to registration inspection of a composite article using infrared radiation. In one embodiment of the invention, infrared blockers, such as absorbing infrared blockers, are incorporated into the component of interest in the composite to increase the visibility of the marked component during inspection.

Abstract: An apparatus for inspecting pattern defects on microscopic circuit patterns, with high resolution, comprises: an objective lens for detecting an image of a sample; a UV laser beam illumination arrangement for illuminating onto a pupil of the objective lens; am arrangement for lowering coherency of the UV laser illumination; a detector of integration type; and an arrangement for processing detected signal thereof.

Abstract: A monitoring system for detection of defects in an optical fiber coating during production of the fiber has first and second beam generating means which produce planar coherent beams which cross each other at the fiber passing through the system creating one or more diffraction patterns. A first plurality of photodetectors are mounted in a mount, the front face of which is impinged by the planar diffraction pattern, and a second plurality of photodetectors is similarly mounted in position below the impinging pattern. A defect in the fiber coating, regardless of shape or orientation, will cause the pattern or patterns to be tilted or shifted upward, downward, or planarly tilted to impinge one or more of the photodiodes which, as a result, generates a signal which is applied to a comparator and control circuit.

Abstract: A method for optical stress analysis comprises the steps of directing an incident beam of polarized light to the sample to be analyzed and analyzing a light bundle exiting the sample in two detection channels extending perpendicular to one another with respect to the polarization direction, providing that the incident beam is elliptically polarized, carrying out the elliptical polarization with an elliptic shape having a comparatively large ratio of the large principal axis to the small principal axis, the direction of rotation of the elliptical polarization of the incident beam changing periodically and using two alternative states of the direction of rotation for each measurement process, adjusting the detection channels which extend perpendicular to one another corresponding to the position of the principal axes of the ellipse and carrying out the difference between two measurements consecutively with the same beam intensity of the incident beam and the same ratio of principal axes, but with opposite direc

Abstract: A device for inspecting solder connections between a component and a substrate or between two components or substrates, wherein the component is disposed upon the surface of the substrate, the device including an image receiving unit. An image transmitting device, the image transmitting device including a first end and a second end, the first end coupled to the image receiving unit. A tip assembly removably coupled to the second end of the image transmitting device, the tip assembly further including a mirror and an image receiving aperture, the tip assembly configured to transmit an image of the solder connections received by the mirror, through the image transmitting device, to the image receiving unit, and an illumination device, the illumination device including a light source, at least one light transmitting device, and at least one light emitting aperture disposed adjacent the image receiving aperture, the light emitting aperture directed towards the solder connections to be inspected.

Abstract: A method for measuring the diameter of an elongated article approximately circular in cross section, in particular of a wire or of a cable, which may include some or all of the following: illumination of the article with a fan-shaped beam of at least one monochromatic light source approximately point shaped in the measuring plane, wherein the main beam direction stands preferably perpendicular on the longitudinal axis of the article receiving the light on a single or multiple lined light-sensitive sensor on the oppositely lying side of the article, wherein the axis of the sensor stands preferably perpendicular on the main beam direction measuring the distance of the article to the sensor or the light source determining a value corresponding to the article diameter by evaluating the intensity patterns in the diffraction patterns at the edges of the shadow caused by the article, and of the measured diameter the distance of the light source to the article or of the sensor to the article is selected such that

Abstract: A system for controlling a mechanical or chemical-mechanical planarizing machine comprises a light system, a sensor, and a computer. The light system can have at least a first emitter that generates a first light pulse having a first color and a second emitter that generates a second light pulse having a second color different than the first color. The first and second light pulses reflect from a microelectronic substrate in a manner that creates a first return light pulse corresponding to a reflectance of the first light pulse and a second return light pulse corresponding to a reflectance of the second light pulse. The sensor receives the first return light pulse and the second return light pulse, and the sensor generates a first measured intensity of the first return light pulse and a second measured intensity of the second return light pulse. The computer has a database and a computer readable medium.

Abstract: Systems and methods for inspecting a surface of a specimen such as a semiconductor wafer are provided. A system may include an illumination system configured to direct a first beam of light to a surface of the specimen at an oblique angle of incidence and to direct a second beam of light to a surface of the specimen at a substantially normal angle. The system may also include a collection system configured to collect at least a portion of the first and second beams of light returned from the surface of the specimen. In addition, the system may include a detection system. The detection system may be configured to process the collected portions of the first and second beams of light. In this manner, a presence of defects on the specimen may be detected from the collected portions of the first and second beams of light.

Abstract: Detecting a defect of an integrated circuit includes illuminating an integrated circuit with an optical beam. The integrated circuit includes a substrate, a dielectric layer disposed outwardly from the substrate, and a sequence of metal links disposed within the dielectric layer. An end metal link of the sequence of metal links is grounded. A change of relative brightness of the dielectric layer proximate to the sequence of metal links is detected. The change of relative brightness comprises a difference between a first brightness associated with a first metal link and a second brightness associated with a second metal link coupled to the first metal link. The change of relative brightness is associated with a defect of the integrated circuit.

Abstract: In an automatic optical measurement method according to the invention, with a movable reflection plate 6 moved to place under an optical axis, light projected from a light projecting portion 3a is received by a light receiving portion 3b via the movable reflection plate 6, a stationary reflection plate 11 and the movable reflection plate 6, whereas with the movable reflection plate 6 moved away from the optical axis and a reference 8 set on a sample stage 10, light projected from the light projecting portion 3a is received by the light receiving portion 3b via the reference 8 whereby a ratio between the intensities of the received lights is determined.

Abstract: Method and apparatus for inspecting articles, such as training pants, by use of multiple zones of irradiation sources whose intensity can be varied from one zone to another to adjust for different thicknesses of materials and the like to provide a clearer image of the various edges and seams.

Abstract: This invention is an apparatus for imaging metrology, which in particular embodiments may be integrated with a processor station such that a metrology station is apart from but coupled to a process station. The metrology station is provided with a first imaging camera with a first field of view containing the measurement region. Alternate embodiments include a second imaging camera with a second field of view. Preferred embodiments comprise a broadband ultraviolet light source, although other embodiments may have a visible or near infrared light source of broad or narrow optical bandwidth. Embodiments including a broad bandwidth source typically include a spectrograph, or an imaging spectrograph. Particular embodiments may include curved, reflective optics or a measurement region wetted by a liquid. In a typical embodiment, the metrology station and the measurement region are configured to have 4 degrees of freedom of movement relative to each other.

Abstract: A method for modeling diffraction includes constructing a theoretical model of the subject. A numerical method is then used to predict the output field that is created when an incident field is diffracted by the subject. The numerical method begins by computing the output field at the upper boundary of the substrate and then iterates upward through each of the subject's layers. Structurally simple layers are evaluated directly. More complex layers are discretized into slices. A finite difference scheme is performed for these layers using a recursive expansion of the field-current ratio that starts (or has a base case) at the lowermost slice. The combined evaluation, through all layers, creates a scattering matrix that is evaluated to determine the output field for the subject.

Abstract: Methods and systems for monitoring semiconductor fabrication processes are provided. A system may include a stage configured to support a specimen and coupled to a measurement device. The measurement device may include an illumination system and a detection system. The illumination system and the detection system may be configured such that the system may be configured to determine multiple properties of the specimen. For example, the system may be configured to determine multiple properties of a specimen including, but not limited to, a property of a specimen prior to, during, or subsequent to an etch process. In this manner, a measurement device may perform multiple optical and/or non-optical metrology and/or inspection techniques.

Abstract: An accuracy analyzing apparatus 1 comprises: a light projector 2 attached to a main spindle 26 for emitting a light beam having a light axis coaxial with the axis of the main spindle 26; a semitransparent mirror 3 which transmits part of the emitted light beam and reflects other part; a first imaging device 4a for receiving the transmitted light beam; a second imaging device 4b for receiving the reflected light beam; and an analyzer 10 which calculates light receiving positions in the first and second imaging devices 4a and 4b, which estimates the light receiving position where the reflected light beam is to be received by the second imaging device 4b in the case where it is assumed that the axis of the main spindle 26 coincides with the first axis, and which compares the estimated light receiving position with the calculated light receiving position to analyze the perpendicularity of the axis of the main spindle 26.