Abstract: A substrate guide of the present invention is provided on a carrier frame of a carrier which holds a substrate substantially vertically so that a surface of the substrate is in a substantially vertical direction and supports the substrate by being in contact with at least a peripheral edge end surface portion of the substrate. The substrate guide includes a base attached to the carrier frame, a substrate support which comes into contact with the peripheral edge end surface portion of the substrate held by the carrier and is attached to the base to be movable in a normal direction of the peripheral edge end surface portion in a direction parallel to the surface of the substrate, and a force-applying member which applies a force to the substrate support toward the substrate with respect to the base.

Abstract: A substrate processing method includes a providing step, a forming step, and an etching step. In the providing step, a substrate including an etching target film, a first mask formed on the etching target film, and a second mask formed to cover at least a part of the first mask is provided. In the forming step, a protective film is formed on a side wall of the second mask by plasma generated from a first gas. In the etching step, the etching target film is etched with plasma generated from a second gas.

Abstract: A substrate processing method performed in a chamber of a substrate processing apparatus is provided. The chamber includes a substrate support, an upper electrode, and a gas supply port. The substrate processing method includes (a) providing the substrate on the substrate support; (b) supplying a first processing gas into the chamber; (c) continuously supplying an RF signal into the chamber while continuously supplying a negative DC voltage to the upper electrode, to generate plasma from the first processing gas in the chamber; and (d) supplying a pulsed RF signal while continuously supplying the negative DC voltage to the upper electrode, to generate plasma from the first processing gas in the chamber. The process further includes repeating alternately repeating the steps (c) and (d), and a time for performing the step (c) once is 30 second or shorter.

Abstract: The disclosed methods and apparatus improve the fabrication of solid fibers and microstructures. In many embodiments, the fabrication is from gaseous, solid, semi-solid, liquid, critical, and supercritical mixtures using one or more low molar mass precursor(s), in combination with one or more high molar mass precursor(s). The methods and systems generally employ the thermal diffusion/Soret effect to concentrate the low molar mass precursor at a reaction zone, where the presence of the high molar mass precursor contributes to this concentration, and may also contribute to the reaction and insulate the reaction zone, thereby achieving higher fiber growth rates and/or reduced energy/heat expenditures together with reduced homogeneous nucleation. In some embodiments, the invention also relates to the permanent or semi-permanent recording and/or reading of information on or within fabricated fibers and microstructures.

Abstract: In an embodiment, a method for manufacturing a micro-electro-mechanical systems (MEMS) transducer device includes providing a substrate body with a surface, depositing an etch-stop layer (ESL) on the surface, depositing a sacrificial layer on the ESL, depositing a diaphragm layer on the sacrificial layer and removing the sacrificial layer, wherein depositing the sacrificial layer includes depositing a first sub-layer of a first material and depositing a second sub-layer of a second material, and wherein the first material and the second material are different materials.

Abstract: A structure body includes a base material and a siloxane based molecular membrane formed on the base material by use of an organic compound represented by Formula (1) or Formula (2): wherein any one of R1 to R5 is an amino group, others of R1 to R5 are each independently hydrogen or an alkyl group, R7 to R9 are each independently any one of hydroxy group, alkoxy group, alkyl group, and phenyl group on condition that one or more of R7 to R9 are each independently a hydroxy group or an alkoxy group, and R6 is an alkyl group.

Abstract: A structure comprising a semiconductor substrate and a layer of PZT (lead zirconate titanate) is etched by performing a first plasma etch step with a first etch process gas mixture. The first etch process gas mixture comprises at least one fluorine containing species. The first plasma etch step is performed so that involatile metal etch products are deposited onto interior surfaces of the chamber. The structure is further etched by performing a second plasma etch step with a second etch process gas mixture. The second etch process gas mixture comprises at least one fluorocarbon species. The second plasma etch step is performed so that a fluorocarbon polymer layer is deposited onto interior surfaces of the chamber to overlay involatile metal etch products deposited in the first plasma etch step and to provide a substrate on which further involatile metal etch products can be deposited.

Abstract: A film with reduced formation of an edge reservoir at a periphery of a film in which the edge reservoir causes an unnecessary residue that cannot be removed by an etching process, and a method for forming the film. A film forming composition for use in a lithography process includes a surfactant containing a polymer and an oligomer having a C3-5 perfluoroalkyl partial structure. The perfluoroalkyl partial structure may further include an alkyl partial structure. The surfactant is contained in an amount of 0.0001% by mass to 1.5% by mass based on the total solid content of the film forming composition. The film forming composition further includes a coating film resin, the coating film resin is a novolac resin, a condensation epoxy resin, a (meth)acylic resin, a polyether-based resin, or a silicon-containing resin, etc. The formed film can be used as a resist underlayer film or a resist overlayer film.

Abstract: A method of fabricating a waveguide structure to form a solid-core waveguide from a waveguiding layer may include etching a fluid channel into the waveguiding layer, etching a first air-gap and a second air gap into the waveguiding layer, wherein etching the first and the second air-gaps creates a solid-core waveguide in the waveguiding layer between the first air-gap and the second air-gap. A method for fabricating a waveguide structure to form a solid-core waveguide may include forming a first trench, a second trench, and a third trench in a substrate layer, and depositing a waveguiding layer on the machined substrate layer, wherein depositing the waveguiding layer creates a hollow core of a fluid channel in a location corresponding to the first trench, and a solid-core waveguide portion in the waveguiding layer in a location corresponding to an area between the second trench and the third trench.

Abstract: A method for manufacturing a semiconductor device includes forming a first pattern structure having a first opening on a lower structure comprising a semiconductor substrate. The first pattern structure includes a stacked pattern and a first spacer layer covering at least a side surface of the stacked pattern. A first flowable material layer including a SiOCH material is formed on the first spacer layer to fill the first opening and cover an upper portion of the first pattern structure. A first curing process including supplying a gaseous ammonia catalyst into the first flowable material layer is performed on the first flowable material layer to form a first cured material layer that includes water. A second curing process is performed on the first cured material layer to form a first low-k dielectric material layer. The first low-k dielectric material layer is planarized to form a planarized first low-k dielectric material layer.

Abstract: A window assembly heat transfer system is disclosed in which a window member has a selected transparency to monitored or sensed electromagnetic wavelengths. One or more passages are provided in the window member for flowing a single-phase or two-phase heat transfer fluid. A mechanism allows either evaporation or condensation of the fluid and/or balancing of a flow of the fluid within the passages. In one embodiment, the window assembly can be made by producing passages in a top surface of a first single plate, optionally producing passages in a bottom surface of a second single plate and bonding the top surface of the first plate to a bottom surface of a second single plate to form the window member with the passage or passages. In another embodiment, the window assembly can be made by providing a core around which the window member material is grown and thereafter removing the core to produce the passage or passages.

Abstract: A plasma etching method of an embodiment includes performing etching on a silicon-containing film by using plasma of a fluorocarbon gas. The fluorocarbon gas used in the plasma etching method has a composition, regarding carbon and fluorine, represented by CxFy, wherein x and y are numbers satisfying x?7 and y?x, and includes a benzene ring structure composed of six carbon atoms.

Abstract: A radiation curable inkjet ink including an adhesion promoter including (1) at least one a free radical polymerizable group selected from the group consisting of an acrylate, a methacrylate, an acryl amide and a methacryl amide; (2) at least one aliphatic tertiary amine; and (3) at least one carboxylic acid or salt thereof with the proviso that the carboxylic acid is linked to an aliphatic tertiary amine via a divalent linking group selected from the group consisting of an optionally substituted methylene group and an optionally substituted ethylene group.

Abstract: Methods for forming a film with reduced formation of an edge reservoir at a periphery of a film in which the edge reservoir causes an unnecessary residue that cannot be removed by an etching process. A film forming composition for use in a lithography process includes a surfactant containing a polymer and an oligomer having a C3-5 perfluoroalkyl partial structure. The perfluoroalkyl partial structure may further include an alkyl partial structure. The surfactant is contained in an amount of 0.0001% by mass to 1.5% by mass based on the total solid content of the film forming composition. The film forming composition further includes a coating film resin, the coating film resin is a novolac resin, a condensation epoxy resin, a (meth)acrylic resin, a polyether-based resin, or a silicon-containing resin, etc. The formed film can be used as a resist underlayer film or a resist overlayer film.

Abstract: Disclosed herein is an environmentally safe etching composition and method for a concrete or mortar surface. The composition includes, in some embodiments, an aqueous solution of urea, acetic acid, a buffering agent, an anticorrosive agent, and a surfactant with no more than about 30% (w/v) urea and at least about 10% (v/v) acetic acid. The method includes, in some embodiments, obtaining the etching composition; applying the etching composition to the concrete or mortar surface at a prescribed ratio of the etching composition to the concrete or mortar surface; allowing the etching composition to stand on the concrete or mortar surface for a prescribed amount of time; and washing the concrete or mortar surface with water to produce an etched surface of the concrete or mortar.

Abstract: A method of fabricating a blazed diffraction grating comprises providing a master template substrate and imprinting periodically repeating lines on the master template substrate in a plurality of master template regions. The periodically repeating lines in different ones of the master template regions extend in different directions. The method additionally comprises using at least one of the master template regions as a master template to imprint at least one blazed diffraction grating pattern on a grating substrate.

Abstract: The invention relates to a coating method for energetic material (12), in particular in a vacuum. The energetic material (12) is coated by chemical or physical vapor deposition. The coating material (16) is electrically conductive and/or hydrophobic or hydrophilic. The energetic material (12) is shaped as grains and/or pellets and/or is in the form of a powder.

Abstract: Etching a refractory metal or other high surface binding energy material on a substrate can maintain or increase the smoothness of the metal/high EO surface, in some cases produce extreme smoothing. A substrate having an exposed refractory metal/high EO surface is provided. The refractory metal/high EO surface is exposed to a modification gas to modify the surface and form a modified refractory metal/high EO surface. The modified refractory metal/high EO surface is exposed to an energetic particle to preferentially remove the modified refractory metal/high EO surface relative to an underlying unmodified refractory metal/high EO surface such that the exposed refractory metal/high EO surface after removing the modified refractory metal/high EO surface is as smooth or smoother than the substrate surface before exposing the substrate surface to the modification gas.

Abstract: Described herein is a process for producing a multilayer coating onto a fiber-reinforced composite material. Also described herein is a fiber-reinforced composite material coated with a multilayer coating obtainable by this process.

Abstract: In a vacuum processing apparatus for performing a predetermined vacuum processing on a surface of a sheet-like base material while keeping the base material to travel inside the vacuum chamber, the can-roller of this invention disposed to lie opposite to a vacuum processing unit has an axial body; an inner cylindrical body to be inserted onto an outside of the axial body; an outer cylindrical body enclosing an outer cylindrical surface of the inner cylindrical body with a gap therebetween, and cover bodies for respectively closing axial both ends of the inner cylindrical body. Each of the cover bodies has a plurality of flow passages. A cross-section of each of the fluid passages overlaps a cross-section of the cover body. A cross-sectional area of the gap between the inner cylindrical body and the outer cylindrical body is set to a size that can obtain a predetermined flow velocity.