Abstract: This invention pertains to slurries, methods and systems that can be used in chemical mechanical planarization (CMP) of tungsten containing semiconductor device. Using the CMP slurries with additives to counter lowering of pH by tungsten polishing byproducts and maintain pH 4 or higher, the erosion of dense metal (such as tungsten) structures can be greatly diminished.

Abstract: The present invention provides a polishing composition with which it is possible to decrease a level difference to be unintentionally generated between dissimilar materials and a level difference to be unintentionally generated between coarse and dense portions of a pattern. The present invention relates to a polishing composition which contains abrasive grains having an average primary particle size of 5 to 50 nm, a level difference modifier containing a compound with a specific structure, having an aromatic ring and a sulfo group or a salt group thereof which is directly bonded to this aromatic ring, and a dispersing medium and of which the pH is less than 7.

Abstract: A polymeric substrate and a method of providing same includes providing a protection system of one or more layers on at least one first surface of the polymeric substrate, coating a spectrally controlling system on a surface of the protection system to provide an external surface, the spectrally controlling system comprising at least a light absorbing or a light reflecting layer, partially removing the spectrally controlling system from the external surface until reaching the at least one first surface of the protection system creating in the spectrally controlling system an area free of the light absorbing or light reflecting layer of the spectrally controlling system, and covering the area by depositing at least one or more substances in droplets.

Abstract: A method for forming a multilayer coating film which includes forming an uncured coating film by applying a first aqueous base coating composition, forming an uncured coating film by applying a second aqueous base coating composition, forming an uncured coating film by applying a clear coating composition, and simultaneously heat curing the obtained coating films. The first aqueous base coating composition contains a carbodiimide compound, the clear coating composition contains a hydroxyl group-containing acrylic resin (A) having a hydroxyl value of 120 to 160 mgKOH/g and an acid value of 5 to 10 mgKOH/g, a polyisocyanate compound (B), and a polycarbonate diol compound (C). The component (A) has a hydroxyl group-containing alkyl moiety having 3 or less carbon atoms, and the ratio of the numbers of moles of the isocyanate functional groups of the component (B) and the hydroxyl group functional groups of the component (A) is 1.15 to 1.35.

Abstract: The present disclosure relates to a method for manufacturing a film for a decoration element, the method including depositing two or more islands on one surface of a film; and forming a pattern portion by dry etching the film using the island as a mask.

Abstract: Gloss of a surface having a concave-convex structure is measured, and R/V, which is a ratio of a diffuse specular reflection intensity R to a sum total V of diffuse reflection intensities (in formula, the diffuse specular reflection intensity R represents a diffuse reflection intensity measured at an aperture angle of 1 degree by a variable-angle photometer in a diffuse specular reflection direction when visible light is radiated, at an angle of 45 degrees from a normal line, to the surface having the concave-convex structure of the anti-glare film, and the sum total V of diffuse reflection intensities represents a sum total of diffuse reflection intensities measured at an aperture angle of 1 degree by a variable-angle photometer for every 1 degree from ?45 degrees up to 45 degrees, including 0 degrees, with respect to the diffuse specular reflection direction when visible light is radiated, at an angle of 45 degrees from a normal line, to the surface having the concave-convex structure of the anti-glare film

Abstract: A method of manufacturing a metal wire, a method of manufacturing a metal wire grid, a wire grid polarizer, and an electronic device are provided. The method of manufacturing a metal wire includes: forming a metal material layer on a base substrate; etching the metal material layer by using a composite gas including an etching gas and a coating reaction gas to form the metal wire and a protective coating layer on a surface of the metal wire.

Abstract: The present invention relates to a nano-protrusion forming method and a base material having a nano-protrusion surface formed by the method. The method includes forming an anti-reflective layer including nano-protrusions having a width of several nm to several tens of nm, and/or an anti-glare layer including protrusions having a width of several tens of nm to several ?m, by a wet etching process using an acid solution without using a nano-mask.

Abstract: Methods for patterning of multi-depth layers for the fabrication of optical devices are provided. In one embodiment, a method is provided that includes disposing a resist layer over a device layer disposed over a top surface of a substrate, the device layer having a first portion and a second portion, patterning the resist layer to form a first resist layer pattern having a plurality of first openings and a second resist layer pattern having a plurality of second openings, and etching exposed portions of the device layer defined by the plurality of first openings and the plurality of second openings, wherein the plurality of first openings are configured to form at least a portion of a plurality of first structures within the optical device, and the plurality of second openings are configured to form at least a portion of a plurality of second structures within the optical device.

Abstract: The present disclosure provides a radio frequency (RF) source control method. An RF source includes at least one pair of a main power supply and a secondary power supply with a same frequency. The RF source control method includes dividing each process step of process steps of a plasma process into a plurality of time periods, and when performing each process step, maintaining a common exciter (CEX) phase locking delay angle of the at least one pair of the main power supply and the secondary power supply corresponding to each of the time periods at a predetermined value to provide an increased angular distribution uniformity of plasma. The RF source control method provided by the present disclosure may be used to adjust plasma distribution above a to-be-processed workpiece to average the plasma angular direction distribution of the entire process step as a whole to increase process uniformity of the to-be-processed workpiece.

Abstract: An etching composition for silicon nitride comprising: a phosphoric acid compound; water; and at least one of a silane compound represented by Formula 1, below, and a reaction product thereof, and an etching method using the same are disclosed,

Abstract: Provided is a method of producing multiple isolated hollow graphene balls, comprising: (a) mixing multiple particles of a graphitic material and multiple particles of a solid polymer carrier material to form a mixture in an impacting chamber of an energy impacting apparatus; (b) operating the energy impacting apparatus to peel off graphene sheets from the graphitic material and transferring the graphene sheets to surfaces of solid polymer carrier material particles to produce graphene-coated polymer particles; (c) recovering the graphene-coated polymer particles from the impacting chamber; and (d) suspending the graphene-encapsulated polymer particles in a gaseous medium to keep the particles separated from each other while concurrently pyrolyzing the particles to thermally convert polymer into pores and carbon, wherein at least one of the graphene balls comprises a hollow core enclosed by a shell composed of graphene sheets bonded together by carbon.

Abstract: A system for applying a chemical agent within a pipe includes a skid assembly, moveable longitudinally within the pipe. The skid assembly has a bottom positionable on a bottom, internal portion of the pipe. A delivery nozzle is carried by the skid assembly and is coupleable to a chemical agent supply. A dispensing tip delivers a controlled stream of chemical agent within the pipe toward an internal surface of the pipe. The tip is held at or above a surface of fluid carried by the pipe while at least a portion of the skid assembly is positioned below the fluid surface. The dispensing tip is limited from delivering the chemical agent downwardly toward the bottom of the skid assembly such that the dispensing tip delivers the controlled stream of chemical agent upwardly away from the bottom surface of the pipe and upwardly away from the fluid surface.

Abstract: A vacuum lock for a vacuum coating plant comprises a chamber for receiving a substrate carrier, wherein the chamber comprises a first and a second inner surface. A conveyor is configured for conveying the substrate carrier. The vacuum lock comprises a flow channel assembly for evacuating and venting the chamber, the flow channel assembly being configured to cause a gas flow between both the first inner surface and a first substrate carrier surface facing the first inner surface and between the second inner surface and a second substrate carrier surface facing the second inner surface. The substrate carrier can be positioned between the first and the second inner surfaces such that a ratio of a first distance between the first inner surface and the first substrate carrier surface to a length (L) of the substrate carrier is smaller than 0.1, and a ratio of a second distance between the second inner surface and the second substrate carrier surface to a length (L) of the substrate carrier is smaller than 0.1.

Abstract: An etching method enables plasma etching of a silicon-containing film with reduced lateral etching. The etching method includes providing a substrate in a chamber included in a plasma processing apparatus. The substrate includes a silicon-containing film. The etching method further includes setting a flow rate proportion of a phosphorus-containing gas with respect to a total flow rate of the process gas so as to establish a predetermined ratio of an etching rate of an alternate stack of a silicon oxide film and a silicon nitride film to an etching rate of the silicon oxide film.

Abstract: An etching method includes: (a) etching a substrate including an etching target film and a mask formed on the etching target film to form a recess that reaches the etching target film; (b) forming a protective film having a thickness corresponding to one molecular layer on a surface of the recess using a first gas; (c) etching the etching target film with plasma generated from a second gas while leaving the protective film on a side wall of the recess; and (d) repeating (b) and (c).

Abstract: An etching method includes a step of selectively forming deposit on a top surface of a mask disposed on a film of a substrate, a step of etching the film after the step of forming the deposit, a step of forming a layer of chemical species included in plasma of a processing gas, on the substrate, and a step of supplying ions from plasma of an inert gas to the substrate so that the chemical species react with the film.

Abstract: A method for processing semiconductor wafer is provided. The method includes loading a semiconductor wafer on a top surface of a wafer chuck. The method also includes supplying a gaseous material between the semiconductor wafer and the top surface of the wafer chuck through a first gas inlet port and a second gas inlet port located underneath a fan-shaped sector of the top surface. The method further includes supplying a fluid medium to a fluid inlet port of the wafer chuck and guiding the fluid medium from the fluid inlet port to flow through a number of arc-shaped channels located underneath the fan-shaped sector of the top surface. In addition, the method includes supplying a plasma gas over the semiconductor wafer.

Abstract: A method of fabricating a metal thin film-on-glass structure. A glass substrate, on a top surface of which a layer is formed, is prepared. A local area of the glass substrate is etched from a bottom of the glass substrate to expose the layer downwardly, thereby forming an exposed area of the layer. The layer is a metal thin film. The etching includes first-etching the glass substrate to a depth less than a thickness of the glass substrate using a first etching solution containing hydrofluoric acid and at least one of nitric acid and sulfuric acid, resulting in a first-etched portion of the glass substrate; and second-etching the first-etched portion of the glass substrate using an etching solution containing hydrofluoric acid without nitric acid or sulfuric acid, so that the layer is exposed downwardly, whereby the metal thin film is supported by a remaining portion of the glass substrate.

Abstract: Multi-layer coatings comprising polymerization reaction products of 1,1-di-activated vinyl compounds are described. Also provided are processes for coating substrates with curable compositions comprising 1,1-di-activated vinyl compounds. Also provided are articles coated with this composition.