Abstract: A polishing liquid comprises: abrasive grains; a compound having an aromatic heterocycle; an additive (excluding the compound having an aromatic heterocycle); and water, wherein: the abrasive grains include a hydroxide of a tetravalent metal element; the aromatic heterocycle has an endocyclic nitrogen atom not bound to a hydrogen atom; and a charge of the endocyclic nitrogen atom obtained by using the Merz-Kollman method is ?0.45 or less.

Abstract: The present disclosure is directed to a method for applying a multi-colored coating to a composite structure comprising applying a first co-curable film layer comprising a first color marking to a composite tool, applying a second co-curable film layer comprising a second color marking over the composite tool and at least partially over the first co-curable film layer to create a lay-up of a multi-colored marking, applying a composite structure over the lay-up of the multi-colored marking, and curing the lay-up of the multi-colored marking and the composite structure in a single curing step to create a cured multi-colored coating on the composite structure. A multi-colored coating for marking a composite structure and an aircraft part having a multi-colored marking are also provided.

Abstract: The multi-chamber heat treatment device includes intermediate conveyors connected together, each treatment conveyor of the intermediate conveyors is attached with a treater that applies predetermined heat treatment to a treatment object and conveys the treatment object to the treater, and each treater is either one of a main treater that applies main treatment to the treatment object, a preheater that applies preheating treatment to the treatment object before the main treatment, and a cooler that applies cooling treatment to the treatment object after the main treatment.

Abstract: Described is a process to clean up junction interfaces for fabricating semiconductor devices involving forming low-resistance electrical connections between vertically separated regions. An etch can be performed to remove silicon oxide on silicon surface at the bottom of a recessed feature. Described are methods and apparatus for etching up the bottom oxide of a hole or trench while minimizing the effects to the underlying epitaxial layer and to the dielectric layers on the field and the corners of metal gate structures. The method for etching features involves a reaction chamber equipped with a combination of capacitively coupled plasma and inductive coupled plasma. CHxFy gases and plasma are used to form protection layer, which enables the selectively etching of bottom silicon dioxide by NH3—NF3 plasma. Ideally, silicon oxide on EPI is removed to ensure low-resistance electric contact while the epitaxial layer and field/corner dielectric layers are—etched only minimally or not at all.

Abstract: Some embodiments include a method of forming a conductive structure. A metal-containing conductive material is formed over a supporting substrate. A surface of the metal-containing conductive material is exposed to at least one radical form of hydrogen and to at least one oxidant. The exposure alters at least a portion of the metal-containing conductive material to thereby form at least a portion of the conductive structure. Some embodiments include a conductive structure which has a metal-containing conductive material with a first region adjacent to a second region. The first region has a greater concentration of one or both of fluorine and boron relative to the second region.

Abstract: Systems and methods may be used to produce coated components. Exemplary semiconductor chamber components may include an aluminum alloy comprising nickel and may be characterized by a surface. The surface may include a corrosion resistant coating. The corrosion resistant coating may include a conformal layer and a non-metal layer. The conformal layer may extend about the semiconductor chamber component. The non-metal oxide layer may extend over a surface of the conformal layer. The non-metal oxide layer may be characterized by an amorphous microstructure having a hardness of from about 300 HV to about 10,000 HV. The non-metal oxide layer may also be characterized by an sp2 to sp3 hybridization ratio of from about 0.01 to about 0.5 and a hydrogen content of from about 1 wt. % to about 35 wt. %.

Abstract: A plasma processing apparatus which forms a first film on a pattern formed on a substrate having dense and coarse areas, and then performs sputtering or etching on the first film.

Abstract: Provided are gas distribution apparatus with a showerhead having a front plate and a back plate spaced to form a gas volume, the front plate having an inner surface adjacent the gas volume and an outer surface with a plurality of apertures extending therethrough, the gas volume having a center region and an outer region; a first inlet in fluid communication with the center region of the gas volume, the inlet having an inside and an outside; and a mixer disposed on the inside of the inlet to increase gas flow temperature. Also provided are processing chamber apparatus and methods of depositing a film.

Abstract: Methods of inducing segmented flow in a material in which a ductile flow mode would otherwise occur during machining. A monolayer molecular film is formed on a surface of a body of a material in a state such that the material exhibits ductile flow when subjected to shear. The monolayer molecular film has molecules each having a head group adsorbed to the surface, a terminal group, and a hydrocarbon chain therebetween having a chain length of greater than 6. A surface portion of the body is removed by engaging the body with a tool in a contact region below the surface of the body and moving the tool relative to the body to remove the surface portion and the monolayer molecular film thereon. The monolayer molecular film induces segmented flow in the material during the removing of the surface portion.

Abstract: Provided is a method for forming a multilayer coating film including the following steps (1) to (4): (1) applying a base paint (X) to a substrate to form a base coating film; (2) applying a specific effect pigment dispersion (Y) to the base coating film formed in step (1) to form an effect coating film with a specific dry film thickness; (3) applying a clear paint (Z) to the effect coating film formed in step (2) to form a clear coating film; and (4) heating the uncured base coating film, the uncured effect coating film, and the uncured clear coating film formed in steps (1) to (3) to simultaneously cure these three coating films.

Abstract: A substrate processing apparatus includes a processing chamber where a substrate support on which a substrate is placed and a target holder configured to hold a target are disposed, a freezing device disposed with a gap with respect to a bottom surface of the substrate support and having a chiller and a cold heat medium laminated on the chiller, and a rotating device configured to rotate the substrate support. The substrate processing apparatus further includes a first elevating device configured to raise and lower the substrate support, a coolant channel formed in the chiller to supply a coolant to the gap, and a cold heat transfer material disposed in the gap and being in contact with the substrate support and the cold heat medium so as to transfer heat therebetween.

Abstract: A chemical mechanical polishing (CMP) slurry composition includes an oxidant including oxygen, and an abrasive particle having a core structure encapsulated by a shell structure. The core structure includes a first compound and the shell structure includes a second compound different from the first compound, where a diameter of the core structure is greater than a thickness of the shell structure, and where the first compound is configured to react with the oxidant to form a reactive oxygen species.

Abstract: A method for in situ protection of a surface (7a) of an aluminum layer (7) of a VUV radiation reflecting coating (6) of an optical element (4), arranged in an interior of an optical arrangement, against the growth of an aluminum oxide layer (8), including carrying out an atomic layer etching process for layer-by-layer removal of the aluminum oxide layer from the surface. The etching process includes a surface modification step and a material detachment step. At least one boron halide is supplied as a surface modifying reactant to the interior in pulsed fashion during the surface modification step. A plasma is generated at a surface (8a) of the aluminum oxide layer, at least during the material detachment step. The atomic layer etching process is performed until the aluminum oxide layer reaches a given thickness (D), or the aluminum oxide layer is kept below that thickness (D) by the process.

Abstract: Provided herein are compositions comprising a first colloidal silica particle that is not surface-modified and a second colloidal silica particle that is surface modified to carry a negative charge. Also provided herein are methods for selectively removing HfO2 or SiO2 from a surface.

Abstract: Proposed is an anodic oxide film structure that includes an anodic oxide film sheet and has high strength, chemical resistance and corrosion resistance.

Abstract: A new spray process allows for deposition below a critical velocity limit of cold spray, while providing adhesion. Post deposition heat treatment has shown excellent coating strength. A wide variety of materials can be deposited. The spray process is based on ShockWave Induced Spraying (SWIS) but with much slower spray jet projection velocities. High porosity, pore size control, and porosity control are demonstrated to be controllable. Preheating of feedstock and uniform temperature of the SWIS delivery allow for the deposition below critical velocity.

Abstract: A plasma processing device member according to the disclosure includes a base material and a film formed of a rare-earth element oxide, or a rare-earth element fluoride, or a rare-earth element oxyfluoride, or a rare-earth element nitride, the film being disposed on at least part of the base material. The film includes a surface to be exposed to plasma, the surface having an arithmetic mean roughness Ra of 0.01 ?m or more and 0.1 ?m or less, the surface being provided with a plurality of pores, and a value obtained by subtracting an average equivalent circle diameter of the pores from an average distance between centroids of adjacent pores is 28 ?m or more and 48 ?m or less. A plasma processing device according to the disclosure includes the plasma processing device member described above.

Abstract: A method for preparing photoactive perovskite materials. The method comprises the step of preparing a germanium halide precursor ink. Preparing a germanium halide precursor ink comprises the steps of: introducing a germanium halide into a vessel, introducing a first solvent to the vessel, and contacting the germanium halide with the first solvent to dissolve the germanium halide. The method further comprises depositing the germanium halide precursor ink onto a substrate, drying the germanium halide precursor ink to form a thin film, annealing the thin film, and rinsing the thin film with a second solvent and a salt.

Abstract: A method for microstructuring a plate-shaped glass substrate by laser radiation includes: introducing one-sided recesses into the glass substrate, in which a focus of the laser radiation forms a spatial beam along a beam axis and in which the laser radiation creates modifications in the glass substrate along the beam axis so that an action of an etching medium subsequently creates the recesses in the glass substrate through anisotropic removal of material in a respective region of the modifications. A chemical composition of the glass substrate is partially changed and thus at least one region of changed properties is created before the action of the etching medium.

Abstract: Disclosed is a method of treating the surface of a quartz member. The method can remove a masking material generated by a chemical reaction between the quartz member and an etching solution, thereby completely removing scratches on the surface of the quartz member without interrupting the treatment process unlike existing technologies. The method also embosses the surface of the quartz member, thereby increasing the frictional resistance and surface roughness of the surface of the quartz member depending on the shape or density of protrusions on the surface. In addition, the method prevents deposits on the surface of the quartz member from peeling off.