Abstract: A method of manufacturing a glass article comprising: forming a first layer of a first metal on a glass substrate, the glass substrate comprising silicon dioxide and aluminum oxide; subjecting the glass substrate with the first layer of the first metal to a first thermal treatment; forming a second layer of a second metal over the first layer of the first metal; and subjecting the second layer of the second metal to a second thermal treatment, the first thermal treatment and the second thermal treatment inducing intermixing of the first metal, the second metal, and at least one of aluminum, aluminum oxide, silicon, and silicon dioxide of the glass substrate to form a metallic region comprising the first metal, the second metal, aluminum oxide, and silicon dioxide. The first metal can be silver. The second metal can be copper.

Abstract: A display panel and a display device are provided. The display panel includes a substrate, a driving circuit layer, a planarization layer, and a light-emitting unit layer. The driving circuit layer is provided on a side of the substrate. The planarization layer is provided on a side of the driving circuit layer facing away from the substrate. The light-emitting unit layer is provided on a side of the planarization layer facing away from the driving circuit layer. The planarization layer includes a first planarization sublayer and a second planarization sublayer. The first planarization sublayer is arranged at least in a first region of the display panel. The second planarization sublayer is arranged at least in a second region of the display panel. Materials of the first planarization sublayer and the second planarization sublayer are different in composition.

Abstract: A display apparatus includes a substrate, a first thin-film transistor including a first semiconductor layer on the substrate, and a first gate electrode on the first semiconductor layer, the first gate electrode being insulated from the first semiconductor layer by a first gate insulating layer, an organic interlayer insulating layer covering the first gate electrode, a first conductive layer on the organic interlayer insulating layer, a first contact hole exposing a top portion of the first semiconductor layer by penetrating through the organic interlayer insulating layer and the first gate insulating layer, and a first protruding portion protruding from a top surface of the substrate between the substrate and the first semiconductor layer, the first protruding portion corresponding to the first contact hole, wherein the first conductive layer contacts the first semiconductor layer through the first contact hole.

Abstract: A display panel includes a light emitting element layer comprising a pixel definition layer having an opening defined therethrough and a light emitting element disposed in the opening. The pixel definition layer includes a first barrier portion and a second barrier portion spaced apart from each other in a first direction to define a first space having a first length in the first direction. A first inorganic layer covers the light emitting element layer. The first inorganic layer includes an uneven upper surface corresponding to the first space. An organic layer is in contact with an upper surface of the first in layer. A first groove is defined by the upper surface of the first inorganic layer overlapping the first space. A thickness of the first inorganic layer overlapping the first space varies. The organic layer is filled in the first groove.

Abstract: A light-emitting display device configured such that an area in which particles are generated is determined in an inspection process after formation of a light-emitting device and correspondingly a cover pattern is formed and a method of manufacturing the same. The particles are prevented from serving as a permeation path of impurities, whereby reliability of the light-emitting display device is improved.

Abstract: A display device, an electronic equipment, and a manufacture method for manufacturing the display device are provided. The display device includes: a substrate, a plurality of light-emitting elements arranged in an array, the plurality of light-emitting elements including a first light-emitting element and a second light-emitting element; and a color filter layer. In a second direction perpendicular to the surface of the substrate, a distance between the plurality of light-emitting elements and the color filter layer is a first distance; the display device has a color deviation prevention viewing angle on a reference plane determined by the first direction and the second direction perpendicular to the surface of the substrate; the color deviation prevention viewing angle is, an angle between a connection line and the second direction; and the first distance is configured to enable the color deviation prevention viewing angle to be greater than a preset angle.

Abstract: A display device includes a substrate having a first surface, a second surface opposite to the first surface, a first non-bendable area, a second non-bendable area, and a bendable area, a display module disposed on the first surface of the substrate, a first protection film disposed on the second surface of the substrate to correspond to the first non-bending area, and a second protection film that differs from the first protection film disposed on the second surface of the substrate to correspond to the second non-bending area, where the first non-bendable area and the second non-bendable area are separated from each other with the bendable area in between.

Abstract: Disclosed are a display panel, a manufacturing method of the display panel, and a display apparatus. The display panel includes: a base substrate; and a pixel circuit film layer disposed on the base substrate. The display panel has a plurality of island regions, opening regions between the adjacent island regions, and bridge regions connecting adjacent island regions. Where the plurality of island regions are provided therein the base substrate and the pixel circuit film layer; the opening regions each is provided with a first via hole, and the first via hole runs through the base substrate and the pixel circuit film layer. The display panel further comprises: deformable components each filling the first via hole; where each deformable component comprises an elastic material.

Abstract: Embodiments of the present disclosure provide a thin film encapsulation structure and a method for manufacturing the same. The thin film encapsulation structure includes a laminated layer for encapsulating a member to be encapsulated located on a substrate, the laminated layer including an organic layer and an inorganic layer alternately stacked, wherein an outermost layer of the laminated layer is the inorganic layer, the organic layer having an inner surface facing the member, an outer surface opposite to the inner surface, and an end surface located between the inner and outer surface and extending over a region, at a periphery of the member, of the substrate, a restriction layer, for positioning the organic layer, located between the end surface of the organic layer and a surface of the substrate, wherein the organic layer has one of hydrophilicity and hydrophobicity and the restriction layer has the other of hydrophilicity and hydrophobicity.

Abstract: A method includes depositing a high-k gate dielectric layer over and along sidewalls of a semiconductor fin. The method further includes depositing an n-type work function metal layer over the high-k gate dielectric layer and performing a passivation treatment on the high-k gate dielectric layer through the n-type work function metal layer. The passivation treatment comprises a remote plasma process. The method further includes depositing a fill metal over the n-type work function metal layer to form a metal gate stack over the high-k gate dielectric layer. The metal gate stack comprising the n-type work function metal layer and the fill metal.

Abstract: A display panel and a display device are provided. The display panel has a display area. The display panel includes: a base substrate; a driving circuit and at least one signal line on the base substrate; and at least one insulating layer between the driving circuit and the at least one signal line. The driving circuit is disposed in a periphery of the display area; and an orthogonal projection of at least one of the signal lines on the base substrate has an overlapping area with an orthogonal projection of the driving circuit on the base substrate.

Abstract: Methods of forming structures including a photoresist underlayer and structures including the photoresist underlayer are disclosed. Exemplary methods include forming the photoresist underlayer that includes metal. Techniques for treating a surface of the photoresist underlayer and/or depositing an additional layer overlying the photoresist underlayer are also disclosed.

Abstract: A manufacturing method of a semiconductor device includes the following steps. An opening is formed penetrating a dielectric layer on a semiconductor substrate. A stacked structure is formed on the dielectric layer. The stacked structure includes a first semiconductor layer partly formed in the opening and partly formed on the dielectric layer, a sacrificial layer formed on the first semiconductor layer, and a second semiconductor layer formed on the sacrificial layer. A patterning process is performed for forming a fin-shaped structure including the first semiconductor layer, the sacrificial layer, and the second semiconductor layer. An etching process is performed to remove the sacrificial layer in the fin-shaped structure. The first semiconductor layer in the fin-shaped structure is etched to become a first semiconductor wire by the etching process. The second semiconductor layer in the fin-shaped structure is etched to become a second semiconductor wire by the etching process.

Abstract: According to one embodiment, a semiconductor device includes a wiring board that has a first surface and a second surface opposed to the first surface, a semiconductor chip provided on the first surface, external connection terminals provided on the second surface, a sealing resin layer provided on the first surface, and a conductive shield layer that covers at least a portion of a side surface of the wiring board and the sealing resin layer. The wiring board includes a first ground wire that is electrically connected to the conductive shield layer, and a second ground wire that is electrically connected to the conductive shield layer and is electrically insulated from the first ground wire.

Abstract: Embodiments of the disclosure relate to an organic light emitting display panel and an organic light emitting display device including the same, and more specifically, to an organic light emitting display panel and an organic light emitting display device which include: an insulation film with at least one concave portion including a flat portion and an inclined portion surrounding the flat portion in at least one subpixel, a first electrode disposed on the concave portion, an organic layer disposed on the first electrode, a second electrode disposed on the organic layer, an encapsulation layer disposed on the second electrode, and at least one structure disposed on the encapsulation layer, overlapping at least one light emitting area, and having at least a side surface where a light reflecting member is disposed, thereby enhancing light extraction efficiency.

Abstract: A display device includes a display panel, a refraction index matching layer disposed on the display panel and including a non-adhesive material, a first protective film disposed on the refraction index matching layer, and a supporting unit including a horizontal portion, a side portion vertically bent from the horizontal portion, and a protrusion portion vertically bent from the side portion and disposed on the protective film. Further, the display panel, the refraction index matching layer, and the protective film are seated on the horizontal portion of the supporting unit. Therefore, the folding characteristic is excellent and the protective film may be easily replaced without causing the damage on the display panel if necessary.

Abstract: The present invention is equipped with: a substrate (10) that has a surface upon which a drive circuit containing a TFT (20) is formed; a planarization film (30) that makes the surface of the substrate planar by covering the drive circuit; and an organic light-emitting element (40) that is provided with a first electrode (41) formed upon the surface of the planarization film and connected to the drive circuit, an organic light-emitting layer (43) formed upon the first electrode, and a second electrode (44) formed upon the organic light-emitting layer. In addition, the planarization film has a two-layer structure comprising an inorganic insulating film (31) and an organic insulating film (32) that are layered upon the TFT, a conductor layer containing a titanium layer and a copper layer is embedded in the interior of a contact hole, and the first electrode is formed electrically connected to the conductor layer.

Abstract: The present invention provides a semiconductor structure for forming a CMOS image sensor. The semiconductor structure includes at least a photodiode formed in the substrate for collecting photoelectrons, and the photodiode has a pinning layer, a first doped region and a second doped region in order from top to bottom in a height direction of the substrate. The semiconductor structure further includes a third doped region located in the substrate corresponding to a laterally extending region of the second doped region. The first doped region has an ion doping concentration greater than the ion doping concentration of the second doped region, the ion doping concentration of the second doped region is greater than the ion doping concentration of the third doped region, and the third doped region is in contact with the second doped region after diffusion. The present invention also provides a method of manufacturing the above-described semiconductor structure.

Abstract: Embodiments described herein relate to sub-pixel circuits and methods of forming sub-pixel circuits that may be utilized in a display such as an organic light-emitting diode (OLED) display. The device includes a plurality of sub-pixels, each sub-pixel of the plurality of sub-pixels defined by adjacent pixel-defining layer (PDL) structures with inorganic overhang structures disposed on the PDL structures, each sub-pixel having an anode, organic light-emitting diode (OLED) material disposed on the anode, and a cathode disposed on the OLED material. The device is made by a process including the steps of: depositing the OLED material and the cathode by evaporation deposition, and depositing an encapsulation layer disposed over the cathode.

Abstract: An OLED display panel, a manufacturing method thereof and a display apparatus are provided. The display panel includes a substrate, a light emitting structure layer and a viewing angle improving layer which are arranged on the substrate. The light emitting structure layer is configured to emit light to the viewing angle improving layer. The viewing angle improving layer is disposed on one side of the light emitting structure layer away from the substrate and is configured to adjust the viewing angle of the display panel to allow the viewing angle of the display panel along a first direction to satisfy a first viewing angle range, and allow the viewing angle along a second direction to satisfy a second viewing angle range. The first direction is perpendicular to the second direction.