Abstract: Provided are a display panel and an electronic apparatus including the same. The display panel has a transmittance area and an expanded display area to enable the representation of images in an area where an electronic component is located and, for example, to remove or decrease the distortion by diffracted light among the light received by the electronic component when the electronic component is an electronic component (e.g., a camera) using light. The display panel includes: a substrate; first pixel circuits and second pixel circuits on the substrate and spaced apart from one another with the transmittance area therebetween, and each including a thin film transistor and a storage capacitor; first and second display elements electrically respectively coupled to the first and second pixel circuits; and a first phase shift layer between the substrate and the first and second pixel circuits and having a first light transmittance.

Abstract: Pixels in an organic light-emitting diode (OLED) display may be microcavity OLED pixels having optical cavities. The optical cavities may be defined by a partially transparent cathode layer and a reflective anode structure. The anode of the pixels may include both the reflective anode structure and a supplemental anode that is transparent and that is used to tune the thickness of the optical cavity for each pixel. Organic light-emitting diode layers may be formed over the pixels and may have a uniform thickness in each pixel in the display. Pixels may have a conductive spacer between a transparent anode portion and a reflective anode portion, without an intervening dielectric layer. The conductive spacer may be formed from a material such as titanium nitride that is compatible with both anode portions. The transparent anode portions may have varying thicknesses to control the thickness of the optical cavities of the pixels.

Abstract: A semiconductor device is provided. The semiconductor device includes a base substrate; a first well region and a second well region in the base substrate; a gate electrode structure, sidewall spacers, a doped source layer and a doped drain layer over the base substrate; a dielectric layer on the base substrate; and an isolation layer in the dielectric layer. The dielectric layer covers sidewalls of the sidewall spacers, the doped source layer and the doped drain layer, and exposes a top surface of the gate electrode structure. The isolation layer is in the gate electrode structure of the second well region and the base substrate of the second well region, and adjacent to the sidewalls of the sidewall spacer over the second well region.

Abstract: A sensor includes a first chip, a dam structure and a cover. The first chip includes a substrate, a sensing area and a low-k material layer. The sensing area is located on the surface of the substrate. The low-k material layer is located in the substrate. The dam structure is located on the first chip. The dam structure covers the edge of the low-k material layer. The cover is located on the dam structure and covers the sensing area. A manufacturing method of a sensor is also provided.

Abstract: A display device includes a display panel including a display region, a first terminal region and a second terminal region facing each other across the display region, a first high power supply trunk wiring line disposed between the display region and the first terminal region, a second high power supply trunk wiring line disposed between the display region and the second terminal region, and a high power supply voltage line. The first high power supply trunk wiring line is connected via the first terminal region to a high power supply voltage source, and the second high power supply trunk wiring line is connected to the high power supply voltage source via the second terminal region and a flexible cable connected to the second terminal region.

Abstract: An organic light emitting diode display device includes a first substrate, an organic light emitting diode including a first electrode, an organic layer and a second electrode and disposed on the first substrate, a conductive layer disposed on the organic light emitting diode, a second substrate disposed over the first substrate, a conductive black matrix disposed on a surface of the second substrate that faces the first substrate, a sealant boding the first substrate and the second substrate and a conductive fill material filled between the first substrate and the second substrate.

Abstract: A display device includes: a first display area including a first pixel area; a second display area including a second pixel area and a transmissive area adjacent to the second pixel area; a first pixel in the first pixel area; a second pixel in the second pixel area; and a dummy pixel in the transmissive area, wherein the dummy pixel includes a light emission portion emitting light on both sides.

Abstract: A chip includes a semiconductor substrate, an electrical connector over the semiconductor substrate, and a molding compound molding a lower part of the electrical connector therein. A top surface of the molding compound is lower than a top end of the electrical connector. A recess extends from the top surface of the molding compound into the molding compound.

Abstract: A package includes a first and a second package component. The first package component includes a first metal trace and a second metal trace at the surface of the first package component. The second metal trace is parallel to the first metal trace. The second metal trace includes a narrow metal trace portion having a first width, and a wide metal trace portion having a second width greater than the first width connected to the narrow metal trace portion. The second package component is over the first package component. The second package component includes a metal bump overlapping a portion of the first metal trace, and a conductive connection bonding the metal bump to the first metal trace. The conductive connection contacts a top surface and sidewalls of the first metal trace. The metal bump is neighboring the narrow metal trace portion.

Abstract: The present invention relates to methods of forming silicon nitride thin films on a substrate in a reaction chamber by plasma enhanced atomic layer deposition (PEALD). Exemplary methods include the steps of (i) introducing an octahalotrisilane Si3X8 silicon precursor, such as octachlorotrisilane (OCTS) Si3Cl8, into a reaction space containing a substrate, (ii) introducing a nitrogen containing plasma into the reaction space, and wherein steps (i), (ii) and any steps in between constitute one cycle, and repeating said cycles a plurality of times until an atomic layer nitride film having a desired thickness is obtained.

Abstract: A light sensitive semiconductor structure including a pn-junction in a silicon substrate. The pn-junction includes a central part and an edge part around surrounding the central part, the edge part being in contact with a surface of the silicon substrate. The structure further includes a plasma shielding structure covering at least a depletion width of the pn-junction over at least a part of the edge part where the edge part contacts the surface of the silicon substrate.

Abstract: In an imaging element including a polarizer, accuracy of obtained polarization information is improved. The imaging element includes a polarizer and a photoelectric conversion element, from the incident light side. A plurality of types of polarizing members is arranged on the polarizer. The plurality of types of polarizing members is polarizing members having the same internal structures, and is formed as the plurality of types of polarizing members by rotationally moving or symmetrically moving one of the polarizing members. The photoelectric conversion element converts light incident through each of the plurality of types of polarizing members into electric charges.

Abstract: A display device and a method for manufacturing the same are disclosed, in which a cathode electrode is not separated from an organic light emitting layer. The method includes forming pixels on a display area on a first substrate, forming an encapsulation film to cover the display area, attaching a protective film onto the encapsulation film, and removing the protective film. The protective film includes a substrate layer and an adhesive layer formed at an edge area of at least one side of the substrate layer.

Abstract: A wafer having on one side a device area with a plurality of devices is processed by providing a protective film and applying the protective film, for covering the devices on the wafer, to the one side of the wafer, so that a front surface of the protective film is in direct contact with the one side of the wafer. The protective film is heated during and/or after applying the protective film to the one side of the wafer, so that the protective film is attached to the one side of the wafer, and the side of the wafer opposite to the one side is processed. Further, the invention relates to a method of processing such a wafer in which a liquid adhesive is dispensed only onto a peripheral portion of a protective film and/or only onto a peripheral portion of the wafer.

Abstract: A display device includes a flexible display panel and a protective film. The protective film includes a film main body and a first adhesion portion. The film main body has a first surface contacting the flexible display panel and a first recess portion recessed from the first surface, and the first adhesion portion is in the first recess portion.

Abstract: An InN nanorod epitaxial wafer grown on an aluminum foil substrate (1) sequentially comprises the aluminum foil substrate (1), an amorphous aluminum oxide layer (2), an AlN layer (3) and an InN nanorod layer, (4) from bottom to top. The wafer can be prepared by pretreating the aluminum foil substrate with an oxidized surface and carrying out an in-situ annealing treatment; then, in a molecular beam epitaxial growth process, forming AlN nucleation sites on the annealed aluminum foil substrate, nucleating on the AlN and growing InN nanorods on the AlN, where the substrate temperature is 400-700° C., the pressure of a reaction chamber is 4.0-10.0×10?5 Torr and the beam ratio of V/III is 20-40.

Abstract: According to an aspect, a display apparatus includes: a substrate; a plurality of pixels disposed on the substrate; a plurality of inorganic light emitting elements that are provided in the pixels, respectively; an electrode that is translucent and provided on one surface side of the substrate and that is coupled to one of the inorganic light emitting elements; a first conductive layer that is translucent and provided on the one surface side of the substrate and that covers the electrode; and a cover member that is translucent and provided on the one surface side of the substrate and that covers the first conductive layer. A sheet resistance value of the first conductive layer is higher than a sheet resistance value of the electrode.

Abstract: A display apparatus of an embodiment includes a first area and a second area disposed adjacent to the first area in a plan view, and includes a first electrode disposed in the first area and a second electrode disposed in the second area, a hole transport region disposed on the first electrode and the second electrode, an emission layer disposed on the hole transport region to overlap the first electrode and not to overlap the second electrode, a buffer layer disposed on the emission layer in the first area and the second area, a surface energy controlling layer disposed on the buffer layer to overlap the second electrode and not to overlap the first electrode, and a third electrode disposed on the buffer layer to overlap the first electrode and not to overlap the surface energy controlling layer. Such a display apparatus may have improved transmittance.

Abstract: A display apparatus includes: a substrate comprising a main display area, a component area, and a peripheral area; a main pixel electrode at the main display area of the substrate; a main thin-film transistor at the main display area of the substrate and electrically connected to the main pixel electrode; an auxiliary pixel electrode at the component area of the substrate; an auxiliary thin-film transistor at the peripheral area of the substrate; and a connecting wire connected to the auxiliary pixel electrode and including a thin portion having a thickness less than a thickness of the auxiliary pixel electrode, wherein the connecting wire electrically connects the auxiliary thin-film transistor to the auxiliary pixel electrode.

Abstract: An optical coupling device includes a light receiving element including a first output terminal and a second output terminal, a light emitting element provided on the light receiving element, a first switching element, a first electrode plate, and a sealing member. The first switching element includes a first main terminal connected to the first output terminal, a first control terminal connected to the second output terminal, and a second main terminal. An upper surface of the first electrode plate is connected to the second main terminal. The sealing member covers the light receiving element, the light emitting element, and the first switching element. A lower surface of the first electrode plate is exposed on a lower surface of the sealing member. The lower surface of the first electrode plate and the lower surface of the sealing member form the same plane.