Abstract: A display device includes a substrate including a first area, a second area, and a bent area therebetween, an inner wiring disposed in the first area, an outer wiring disposed in the second area, an inter-insulating layer which covers the inner wiring and the outer wiring and in which an opening corresponding to the bent area is defined, a first organic insulating layer, where a portion thereof is located in the opening, a connection wiring disposed on the first organic insulating layer and connecting the inner wiring to the outer wiring, a conductive layer disposed between the inter-insulating layer and the first organic insulating layer and electrically connected to one of the inner wiring and the outer wiring, and an inorganic protective layer which covers the conductive layer and in which an opening corresponding to the bent area is defined.

Abstract: A drive backplane, a display panel, an electronic apparatus, and a method for preparing a drive backplane are provided in embodiments of the disclosure, all relating to the technical field of display technology, the drive backplane including: a base substrate; a driving device layer on the base substrate, comprising an electrode layer; a planarization layer, on a surface of the driving device layer facing away from the base substrate, and the planarization layer being provided with at least one projection portion and at least one base portion adjacent to the at least one projection portion both on a surface of the planarization layer facing away from the driving device layer, each projection portion having a greater thickness than that of each base portion; a conductive layer, on respective surface of each projection portion facing away from the driving device layer, the conductive layer being connected with the electrode layer of the driving device layer; a spacer layer, on a surface of the conductive layer

Abstract: An organic light emitting diode display includes a substrate including a display area and a pad area, a first thin film transistor disposed on the display area, an organic light emitting diode connected to the first thin film transistor, a pad electrode disposed on the pad area and a pad contact electrode disposed on an upper portion of the pad electrode and electrically connected to the pad electrode. The organic light emitting diode includes an anode, an organic emission layer, and a cathode. The anode includes a lower layer, an intermediate layer, and an upper layer. The pad contact electrode is formed of a material of the lower layer of the anode.

Abstract: Provided are an array substrate, a display panel, a display device and a method for manufacturing the array substrate. The array substrate includes a first thin film transistor and a second thin film transistor. The first thin film transistor includes a first active layer, a first gate, a first A-type electrode and a first B-type electrode. The second thin film transistor includes a second active layer, a second gate, a second A-type electrode and a second B-type electrode. In a direction perpendicular to a plane where a substrate is located, a film where the first active layer is located, a film where the first A-type electrode is located, a film where the first B-type electrode is located, and a film where the first gate electrode is located each are disposed between a film where the second active layer is located and the substrate.

Abstract: A semiconductor structure includes a substrate, a device, a contact via, a metal/dielectric layer, and a test structure. The device is over the substrate. The contact via is connected to the device. The metal/dielectric layer is over the contact via. The metal/dielectric layer includes a first portion and a second portion. The first portion of the metal/dielectric layer has a metallization pattern connected to the contact via. The second portion of the metal/dielectric layer is void of metal. The test structure is over the second portion of the metal/dielectric layer.

Abstract: The present invention provides a blue light compensation film and an OLED display. The blue light compensation film of the present invention effectively absorbs blue light with wavelength longer than blue wavelength and excite blue light by using a blue light upconversion luminescent material, and effectively improves color shift white OLED device caused by short lifespan of blue electroluminescent material to achieve blue light compensation of the white OLED device and solve the of yellowing in traditional OLED display with age. The OLED display of the present invention comprises the blue light compensation film to avoid color shift problem and provides good display quality.

Abstract: The present invention provides a blue light compensation film and an OLED display. The blue light compensation film of the present invention effectively absorbs blue light with wavelength longer than blue wavelength and excite blue light by using a blue light upconversion luminescent material, and effectively improves color shift white OLED device caused by short lifespan of blue electroluminescent material to achieve blue light compensation of the white OLED device and solve the of yellowing in traditional OLED display with age. The OLED display of the present invention comprises the blue light compensation film to avoid color shift problem and provides good display quality.

Abstract: The present invention provides a blue light compensation film and an OLED display. The blue light compensation film of the present invention effectively absorbs blue light with wavelength longer than blue wavelength and excite blue light by using a blue light upconversion luminescent material, and effectively improves color shift white OLED device caused by short lifespan of blue electroluminescent material to achieve blue light compensation of the white OLED device and solve the of yellowing in traditional OLED display with age. The OLED display of the present invention comprises the blue light compensation film to avoid color shift problem and provides good display quality.

Abstract: The present invention provides a blue light compensation film and an OLED display. The blue light compensation film of the present invention effectively absorbs blue light with wavelength longer than blue wavelength and excite blue light by using a blue light upconversion luminescent material, and effectively improves color shift white OLED device caused by short lifespan of blue electroluminescent material to achieve blue light compensation of the white OLED device and solve the of yellowing in traditional OLED display with age. The OLED display of the present invention comprises the blue light compensation film to avoid color shift problem and provides good display quality.

Abstract: A display device may include a first base, a metal oxide layer overlapping a face of the first base, and a conductive metal layer directly contacting the metal oxide layer. The metal oxide layer may include molybdenum oxide. A side of the metal oxide layer may be oriented at a first angle relative to the face of the first base. A side of the conductive metal layer may be oriented at a second angle relative to the face of the first base. A size of the second angle may be in a range of 30° to 75°.

Abstract: Methods of forming a strained channel device utilizing dislocations disposed in source/drain structures are described. Those methods and structures may include forming a thin silicon germanium material in a source/drain opening of a device comprising silicon, wherein multiple dislocations are formed in the silicon germanium material. A source/drain material may be formed on the thin silicon germanium material, wherein the dislocations induce a tensile strain in a channel region of the device.

Abstract: A semiconductor device enabling high integration is provided. The semiconductor device includes a plug, two capacitors, and two transistors sharing one oxide semiconductor. Each of the transistors includes a stacked-layer structure of a gate insulator and a gate electrode over the oxide semiconductor and an insulator in contact with a side surface of the gate electrode. An opening between the two gate electrodes exposes the insulators in contact with the side surfaces of the gate electrodes, and the plug is in the opening. The capacitor is directly provided over the oxide semiconductor. The side surface area of the capacitor is larger than the projected area of the capacitor.

Abstract: According to one embodiment, a magnetic memory device includes a first memory cell which includes a first stacked structure including a magnetic layer, and a second memory cell which is provided on the first memory cell and includes a second stacked structure including a magnetic layer, wherein each of the first stacked structure and the second stacked structure has a structure in which a plurality of layers including a predetermined layer are stacked, and the predetermined layer included in the first stacked structure and the predetermined layer included in the second stacked structure have different thicknesses.

Abstract: Different isolation liners for different type FinFETs and associated isolation feature fabrication are disclosed herein. An exemplary method includes performing a fin etching process on a substrate to form first trenches defining first fins in a first region and second trenches defining second fins in a second region. An oxide liner is formed over the first fins in the first region and the second fins in the second region. A nitride liner is formed over the oxide liner in the first region and the second region. After removing the nitride liner from the first region, an isolation material is formed over the oxide liner and the nitride liner to fill the first trenches and the second trenches. The isolation material, the oxide liner, and the nitride liner are recessed to form first isolation features (isolation material and oxide liner) and second isolation features (isolation material, nitride liner, and oxide liner).

Abstract: A redistribution structure includes a first dielectric layer and a first redistribution circuit layer. The first dielectric layer includes a first via opening. The first redistribution circuit layer is disposed on the first dielectric layer and includes a via portion filling the first via opening and a circuit portion connecting the via portion and extending over the first dielectric layer. A maximum vertical distance between an upper surface of the via portion and an upper surface of the circuit portion is substantially equal to or smaller than 0.5 ?m.

Abstract: The present disclosure relates to the technical field of semiconductors, and discloses a semiconductor device and a manufacturing method therefor. The manufacturing method may include: providing a semiconductor structure, where the semiconductor structure includes a semiconductor fin and an interlayer dielectric layer covering the semiconductor fin, the interlayer dielectric layer having an opening exposing a part of the semiconductor fin; forming a data storage layer at a bottom portion and a side surface of the opening; and filling a conductive material layer in the opening on the data storage layer. The present disclosure facilitate the manufacturing process of the semiconductor device and improves processing compatibility with the CMOS technology.

Abstract: A structure is provided that includes a first conductive component and a first interlayer dielectric (ILD) that surrounds the first conductive component. A self-assembly layer is formed on the first conductive component but not on the first ILD. A first dielectric layer is formed over the first ILD but not over the first conductive component. A second ILD is formed over the first conductive component and over the first ILD. An opening is etched in the second ILD. The opening is at least partially aligned with the first conductive component. The first dielectric layer protects portions of the first ILD located therebelow from being etched. The opening is filled with a conductive material to form a second conductive component in the opening.

Abstract: A light emitting diode includes a first electrode overlapping a second electrode, an emission layer between the first and second electrodes. a first hole injection layer and a second hole injection layer between the first electrode and the emission layer, and a first hole transporting layer between the first hole injection layer and the second hole injection layer. Each of the first and second hole injection layers includes an inorganic dipole material. At least one of the first hole injection layer or the second hole injection layer including an organic material.

Abstract: Apparatuses and methods are disclosed. One such apparatus includes a well having a first type of conductivity formed within a semiconductor structure having a second type of conductivity. A boundary of the well intersects an active area of a tap to the well.

Abstract: A semiconductor device including a field effect transistor (FET) device includes a substrate and a channel structure formed of a two-dimensional (2D) material over the substrate. Source and drain contacts are formed partially over the 2D material. A first dielectric layer is formed at least partially over the channel structure and at least partially over the source and drain contacts. The first dielectric layer is configured to trap charge carriers. A second dielectric layer is formed over the first dielectric layer, and a gate electrode is formed over the second dielectric layer.