Patents Examined by Tan N. Tran
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Patent number: 11894369Abstract: A semiconductor device including a substrate; gate structures spaced apart from each other on the substrate, each gate structure including a gate electrode and a gate capping pattern; source/drain patterns on opposite sides of the gate structures; first isolation patterns that respectively penetrate adjacent gate structures; and a second isolation pattern that extends between adjacent source/drain patterns, and penetrates at least one gate structure, wherein each first isolation pattern separates the gate structures such that the gate structures are spaced apart from each other, the first isolation patterns are aligned with each other, and top surfaces of the first and second isolation patterns are each located at a level the same as or higher than a level of a top surface of the gate capping pattern.Type: GrantFiled: January 7, 2022Date of Patent: February 6, 2024Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Ho-Jun Kim, Hyungjin Park
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Patent number: 11894393Abstract: An embodiment of the present invention provides a display device including a substrate and a transistor on the substrate. The transistor includes: a lower layer having conductivity and including a body portion and a plurality of protrusions; an oxide semiconductor layer including a channel region, a first conductive region disposed at a first side of the channel region, and a second conductive region disposed at a second side of the channel region, where the second side is opposite the first side; a gate electrode overlapping the channel region in a plan view; a first electrode electrically connected to the first conductive region; and a second electrode electrically connected to the second conductive region. The plurality of protrusions protrudes from the body portion, and the body portion overlaps the channel region in the plan view.Type: GrantFiled: April 16, 2021Date of Patent: February 6, 2024Assignees: SAMSUNG DISPLAY CO., LTD., INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY ERICA CAMPUSInventors: Hye Lim Choi, Saeroonter Oh, Kihwan Kim, Joon Seok Park, Ji Hwan Lee, Jun Hyung Lim
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Patent number: 11895870Abstract: The present invention provides a display panel and a display device. A first gate electrode and a first polar plate of a first thin film transistor are used to constitute a storage capacitor. At a same time, the first polar plate and a second gate electrode of a second thin film transistor are disposed in a same layer. Therefore, a gate insulation layer used to separate the first polar plate from the first gate electrode and the second gate electrode in layers can be omitted, so as to reduce a number of film layers in the display panel and a thickness of a film laminated structure, thereby reducing a complexity of a process flow of the display panel, and improving bending ability of the display panel.Type: GrantFiled: November 5, 2020Date of Patent: February 6, 2024Assignee: WUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.Inventor: Jixiang Gong
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Patent number: 11881488Abstract: A display panel includes: a first gate line extending in a first direction; a second gate line extending in the first direction and spaced apart from the first gate line in a second direction crossing the first direction; a first connection line extending in the second direction; and a second connection line extending in the second direction and spaced apart from the first connection line in the first direction, wherein a distal end of the first connection line overlaps the first gate line and is electrically connected to the first gate line, and wherein a distal end of the second connection line overlaps the second gate line and is electrically connected to the second gate line.Type: GrantFiled: June 18, 2021Date of Patent: January 23, 2024Assignee: Samsung Display Co., Ltd.Inventor: Sun Park
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Patent number: 11876091Abstract: An electrostatic discharge protection wiring is provided, and the electrostatic discharge protection wiring includes a gate signal line, a driving circuit, a gate connection line, and a source/drain. By disposing the bent gate connection line at an end of the gate signal line, the electrostatic discharge passes through the bent gate connection line to lose a part of current, thus reducing an effect of the electrostatic discharge to prevent bright spots at edges of panels caused by the weak electrostatic discharge.Type: GrantFiled: June 17, 2020Date of Patent: January 16, 2024Assignee: Wuhan China Star Optoelectronics Technology Co., Ltd.Inventor: Li Xu
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Patent number: 11871616Abstract: An organic light emitting display device may include a first thin film transistor including a first active layer formed of a first material and includes a first source region, a first channel region, and a first drain region, a first gate electrode and a first source electrode and a first drain electrode, a second thin film transistor including a second active layer formed of a second material and includes a second source region, a second channel region, and a second drain region, a second gate electrode, and a second source electrode and a second drain electrode, a light blocking layer overlapping a lower portion of the second active layer and formed on the same layer as the second capacitor electrode, and a first protrusion pattern and a second protrusion pattern disposed on the same layer as the first gate electrode and overlapping the light blocking layer.Type: GrantFiled: October 29, 2021Date of Patent: January 9, 2024Assignee: LG Display Co., Ltd.Inventors: Sangsoon Noh, Eunsung Kim
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Patent number: 11862641Abstract: In the present disclosure, a photodiode structure is used as a photosensor in an array substrate. The semiconductor structure in the photosensor includes a N-type heavily doped amorphous silicon layer, an amorphous silicon layer, and a P-type heavily doped amorphous silicon layer, thereby realizing the integration of photosensors into large-sized devices, the enhancement of device sensitivity, and the reduction of costs.Type: GrantFiled: November 27, 2020Date of Patent: January 2, 2024Assignee: TCL CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.Inventor: Li Guo
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Patent number: 11862581Abstract: A semiconductor package includes a support frame, and including a cavity, a semiconductor chip disposed in the cavity and having an active surface on which contact pads are arranged, and a connection member on the support frame and on the active surface of the semiconductor chip. The semiconductor chip includes a first insulating film disposed on the active surface and exposing the contact pads, a second insulating film disposed on the first insulating film and including a first opening exposing connection regions of the contact pads, and a conductive crack preventing layer disposed on the connection regions and having an outer peripheral region extending to a portion of the second insulating film around the first opening. The connection member includes an insulating layer including a second opening exposing the connection regions; and a redistribution layer connected to the contact pads through the second opening.Type: GrantFiled: August 12, 2022Date of Patent: January 2, 2024Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Ji Eun Park, Mi Jin Park
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Patent number: 11864423Abstract: A thin film transistor substrate includes: a substrate, a first electrode disposed on the substrate, a bank disposed on the substrate and having an inclined surface inclined at an angle with respect to the substrate, a second electrode disposed on the bank, an active pattern electrically connected to the first electrode and the second electrode, disposed on the inclined surface, and including a first conductive region and a second conductive region in which impurities are doped, and a channel region between the first conductive region and the second conductive region, and a gate electrode overlapping at least a portion of the channel region of the active pattern. The inclined surface extends in a first direction in a plan view. The first conductive region, the channel region, and the second conductive region are sequentially disposed on the inclined surface along a second direction that crosses the first direction.Type: GrantFiled: January 10, 2022Date of Patent: January 2, 2024Assignee: Samsung Display Co., Ltd.Inventors: Thanh Tien Nguyen, Meejae Kang, Yongsu Lee, Sanggun Choi
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Patent number: 11855104Abstract: A display device includes: a first electrode layer; a semiconductor layer including a source region, a drain region, and a channel region, wherein at least a portion of the source region or the drain region overlaps the first electrode layer; a second electrode layer arranged adjacent to the channel region; a third electrode layer overlapping the second electrode layer and at least a portion of the source region or the drain region; and a power line electrically connected to the first electrode layer and the third electrode layer.Type: GrantFiled: November 16, 2020Date of Patent: December 26, 2023Assignee: Samsung Display Co., Ltd.Inventors: Youngin Hwang, Elly Gil, Sungho Kim, Eungtaek Kim, Yongho Yang, Seongmin Wang, Jina Lee, Joohyeon Jo, Seongbaik Chu
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Patent number: 11849615Abstract: A display device including a substrate including a first display region having a first width, a second display region having a second width smaller than the first width, a peripheral region at a periphery of the first and second display regions, and a dummy region in the peripheral region, a first pixel in the first display region, a second pixel in the second display region, a first control line connected to the first pixel and extending in the first display region, a second control line connected to the second pixel and extending in the second display region, and a dummy line connected to the second control line in the dummy region, wherein the second control line is at a first conductive layer on a first insulating layer, the dummy line is at a second conductive layer on a second insulating layer on the first conductive layer.Type: GrantFiled: March 28, 2022Date of Patent: December 19, 2023Assignee: Samsung Display Co., Ltd.Inventors: Yang Wan Kim, Byung Sun Kim, Su Jin Lee, Hyung Jun Park, Jae Yong Lee
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Patent number: 11848230Abstract: Different isolation liners for different type FinFETs and associated isolation feature fabrication are disclosed herein. An exemplary method includes performing a fin etching process on a substrate to form first trenches defining first fins in a first region and second trenches defining second fins in a second region. An oxide liner is formed over the first fins in the first region and the second fins in the second region. A nitride liner is formed over the oxide liner in the first region and the second region. After removing the nitride liner from the first region, an isolation material is formed over the oxide liner and the nitride liner to fill the first trenches and the second trenches. The isolation material, the oxide liner, and the nitride liner are recessed to form first isolation features (isolation material and oxide liner) and second isolation features (isolation material, nitride liner, and oxide liner).Type: GrantFiled: August 9, 2021Date of Patent: December 19, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Tzung-Yi Tsai, Tsung-Lin Lee, Yen-Ming Chen
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Patent number: 11848376Abstract: A high electron mobility transistor (HEMT) includes a GaN epi-layer, a first passivation layer, a source electrode metal, a drain electrode metal, a gate electrode metal, and a field plate. The first passivation layer is deposited on the GaN epi-layer. The source electrode metal, the drain electrode metal, and the gate electrode are recessed into the first passivation layer and deposited on the GaN epi-layer. The source electrode metal has a source field plate with a source field plate length Lsf. The drain electrode metal has a drain field plate with a drain field plate length Ldf, wherein Ldf>Lsf. The gate electrode is situated between the source electrode metal and the drain electrode metal. The field plate is situated between the gate electrode and the drain electrode metal.Type: GrantFiled: June 1, 2023Date of Patent: December 19, 2023Assignee: HIPER SEMICONDUCTOR INC.Inventors: Yan Lai, Wei-Chen Yang
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Patent number: 11844238Abstract: A display device includes a substrate, a first semiconductor pattern, a first gate insulating film covering the first semiconductor pattern, a first conductive layer and a second semiconductor pattern are on the first gate insulating film, a second gate insulating film on the second semiconductor pattern, a third gate insulating film covering the first gate insulating film and the second gate insulating film, a second conductive layer on the third gate insulating film, an interlayer insulating film covering the second conductive layer, and a third conductive layer on the interlayer insulating film, wherein the first and second semiconductor patterns respectively form semiconductor layers of the first and second transistors, wherein the first conductive layer includes a gate electrode of the first transistor and a first electrode of the capacitor, and wherein the second conductive layer includes a gate electrode of the second transistor and a second electrode of the capacitor.Type: GrantFiled: May 3, 2022Date of Patent: December 12, 2023Assignee: Samsung Display Co., Ltd.Inventors: Jay Bum Kim, Myeong Ho Kim, Kyoung Seok Son, Seung Jun Lee, Seung Hun Lee, Jun Hyung Lim
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Patent number: 11844261Abstract: The present application provides an organic light-emitting diode (OLED) display panel and an electronic device. A projection of a touch electrode of the OLED display panel projected on a base substrate is at least partially overlapped with a projection of a support pillar projected on the base substrate. The support pillar includes at least one side surface. An angle between an upper top surface of the support pillar is less than or equal to 90 degrees, and/or an angle between the side surface and a lower bottom surface of the support pillar is greater than or equal to 90 degrees. A common electrode layer is disconnected at the support pillar. Accordingly, the present application improves a report rate for touch control and enhances touch sensitivity of the OLED display panel.Type: GrantFiled: August 6, 2020Date of Patent: December 12, 2023Assignee: WUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.Inventor: Jian Ye
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Patent number: 11837633Abstract: The HEMT includes a channel layer, a barrier layer, a drain, and a gate conductor. The barrier layer is disposed on the channel layer. The drain is disposed on the barrier layer. The gate conductor is disposed on the barrier layer. The barrier layer comprises a doped semiconductor region extending from a top surface to a bottom surface of the barrier layer and located between the drain and the gate conductor.Type: GrantFiled: March 3, 2022Date of Patent: December 5, 2023Assignee: INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.Inventors: King Yuen Wong, Ronghui Hao, Jinhan Zhang
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Patent number: 11839112Abstract: A display apparatus includes a substrate including a display area in which a display element is arranged, a first thin-film transistor arranged in the display area and including a first semiconductor layer and a first gate electrode insulated from the first semiconductor layer, the first semiconductor layer including a silicon semiconductor, a first interlayer insulating layer covering the first gate electrode, a second thin-film transistor on the first interlayer insulating layer and including a second semiconductor layer and a second gate electrode insulated from the second semiconductor layer, the second semiconductor layer including an oxide semiconductor, and an upper electrode arranged on the first interlayer insulating layer and including a same material as that of the second semiconductor layer and at least overlapping the first gate electrode.Type: GrantFiled: July 8, 2021Date of Patent: December 5, 2023Assignee: Samsung Display Co., Ltd.Inventors: Juwon Yoon, Taehoon Yang
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Patent number: 11825712Abstract: An organic light emitting diode display includes a substrate including a display area and a pad area, a first thin film transistor disposed on the display area, an organic light emitting diode connected to the first thin film transistor, a pad electrode disposed on the pad area and a pad contact electrode disposed on an upper portion of the pad electrode and electrically connected to the pad electrode. The organic light emitting diode includes an anode, an organic emission layer, and a cathode. The anode includes a lower layer, an intermediate layer, and an upper layer. The pad contact electrode is formed of a material of the lower layer of the anode.Type: GrantFiled: August 26, 2021Date of Patent: November 21, 2023Assignee: SAMSUNG DISPLAY CO., LTD.Inventors: Kap Soo Yoon, Chan Woo Yang, June Whan Choi
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Patent number: 11824051Abstract: A display device comprises a substrate including emission areas, and light blocking areas adjacent to the emission areas, a thin film transistor layer comprising a thin film transistor disposed on the substrate, and a connection line electrically connected to the thin film transistor, a light emitting element layer disposed on the thin film transistor layer and comprising light emitting elements corresponding to the emission areas, an encapsulation layer overlapping the light emitting element layer, and a pad portion disposed on the encapsulation layer and in electrical contact with the connection line through a contact hole in the encapsulation layer.Type: GrantFiled: May 18, 2021Date of Patent: November 21, 2023Assignee: SAMSUNG DISPLAY CO., LTD.Inventor: Dae Hwan Jang
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Patent number: 11817529Abstract: A light emitting element includes a semiconductor structure, and first and second electrodes. In a plan view, the first electrode has a first connecting portion, and a first extending portion and exactly two second extending portions. The second electrode has a second connecting portion, and exactly two third extending portions. The first extending portion extends linearly from the first electrode connecting portion toward the second electrode connecting portion. Each of the two third extending portions includes a bent portion, and a linear portion located between the first extending portion and a respective one of linear portions of the two second extending portions, and along an imaginary line that extends through the two second extending portions and the two third extending portions in a direction perpendicular to the direction in which the first extending portion extends, an entirety of the second electrode is located inward of the two second extending portions.Type: GrantFiled: March 12, 2021Date of Patent: November 14, 2023Assignee: NICHIA CORPORATIONInventors: Kosuke Sato, Keiji Emura