Abstract: A charge pump method and apparatus is described having various aspects. Noise injection from a charge pump to other circuits may be reduced by limiting both positive and negative clock transition rates, as well as by limiting drive currents within clock generator driver circuits, and also by increasing a control node AC impedance of certain transfer capacitor coupling switches. A single-phase clock may be used to control as many as all active switches within a charge pump, and capacitive coupling may simplify biasing and timing for clock signals controlling transfer capacitor coupling switches. Any combination of such aspects of the method or apparatus may be employed to quiet and/or simplify charge pump designs over a wide range of charge pump architectures.

Abstract: A mobile telephone is provided that includes a plurality of circuit blocks and adapted to cut off the supply of power source voltage to any one of the circuit blocks. The mobile telephone also includes an interblock interface circuit provided on a signal path between an elected circuit block and a branch point at which the signal path branches into different branch paths so as to connect to other circuit blocks. The interblock interface circuit includes a signal gate for preventing signal transmission from the elected circuit block to the other circuit blocks, and includes a storage unit for storing a signal right before the power cut-off.

Abstract: If a power supply is provided to a circuit necessary to control a switch for switching a path after wakeup, or if a buckle switch is switched while a microcomputer is asleep, an electrical current necessary for reliable operation of the buckle switch cannot be supplied during sleep, so that the buckle switch will not operate normally. This creates the possibility that wakeup cannot be performed. To permit the electrical current necessary for reliable operation of the buckle switch to be secured if the buckle switch is switched while the microcomputer is asleep, an FET capable of being kept ON or OFF by a power supply acting during sleep, a resistor connected with the FET, and a resistor of large resistance for blocking excessive dark current if the buckle switch is connected are arranged in parallel. The combined resistance of the parallel combination of these elements is used as a pull-up resistance at the input of a control unit.

Abstract: A start circuit including a load unit, a first switch, a second switch and a reset control circuit is provided. The load unit receives a power voltage. The first switch is electrically connected between a first end of the load unit and a ground, and receives a node voltage from a reference circuit. The second switch has a first end electrically connected to the reference circuit, a second end electrically connected to the ground, and a control end electrically connected to the second end of the load unit. The second switch determines whether to provide a start voltage to the reference circuit according to a conducting state thereof. The reset control circuit provides a discharge path between a control end of the first switch and the ground, and conducts the discharge path according to the power voltage during a period when the power voltage is smaller than a threshold voltage.

Abstract: A multi-stage charge pump selects the number of active stages dynamically. In the exemplary embodiment, this is done by having a multi-stage master charge pump section in which the number of active stages is settable and a slave charge pump section that is of the same design as the master section. The master section is used to drive the external load, while the slave section drives an adjustable internal load. The adjustable internal load is set by control logic by comparing the operation of the two sections. The control logic then operates the slave section with a different number of active stages than the master stage in order to determine whether the master stage is using the optimal number of active stages. The control logic can then change the number of active stages accordingly.

Abstract: Systems, methods, and devices that generate a desired boosted gate voltage to facilitate controlling a charge pump are presented. A multi-phase charge pump (e.g., two-phase CMOS charge pump) can comprise a desired number of switch cells (SCs), wherein each SC can include a gate boost switch control component, which employs two transistors (without the need for external circuitry), and generates a desired gate voltage, based at least in part on a desired clock signal, wherein the desired gate voltage is applied to a charge transfer switch, Mc, of the SC to facilitate transferring a voltage across the Mc to a node on the other side of the Mc, in each stage of the charge pump, wherein the SCs are associated with a desired number of flying capacitors to facilitate increasing the input voltage to a desired output voltage.

Abstract: Digital multilevel memory systems and methods include a charge pump for generating regulated high voltages for various memory operations. The charge pump may include a plurality of pump stages. Aspects of exemplary systems may include charge pumps that performs orderly charging and discharging at low voltage operation conditions. Additional aspects may include features that enable state by state pumping, for example, circuitry that avoids cascaded short circuits among pump stages. Each pump stage may also include circuitry that discharges its nodes, such as via self-discharge through associated pump interconnection(s). Further aspects may also include features that: assist power-up in the various pump stages, double voltage, shift high voltage levels, provide anti-parallel circuit configurations, and/or enable buffering or precharging features, such as self-buffering and self-precharging circuitry.

Abstract: A start circuit adapted to start a reference circuit including a plurality of bias nodes is provided. The start circuit includes a current source, a current mirror, a load device, and a control device. The current source determines whether or not to generate an internal current according to a plurality of bias voltages on a part of the bias nodes. The current mirror duplicates the internal current to produce a mirrored current. The load device adjusts a control voltage according to the mirrored current. The control device determines whether or not to generate a start voltage according to the control voltage, and transmits the start voltage to one of the part of the bias nodes, so as to break the reference circuit away from a zero-current state.

Abstract: A capacitive load drive circuit may comprise a high current drive amplifier configured to be coupled to a capacitive load during a high current ramp up of the voltage across the capacitive load to a cut off voltage; a low current drive amplifier configured to be connected to the capacitive load during a low current ramp up of the voltage across the capacitive load, from the cut off voltage to a maximum voltage across the capacitive load; and the high current drive amplifier configured to be connected to the capacitive load during a high current ramp down of the voltage across the capacitive load. The low current drive amplifier may be connected to the capacitive load during a period of steady state of the voltage across the capacitive load, intermediate the low current ramp up and the high current ramp down.

Abstract: A current source is switchable between two precisely defined output currents. A terminal of a coupling capacitor is coupled to the gate of an output MOSFET. The other terminal of the capacitor is switched between two reference voltages to toggle the output MOSFET to output the selected one of the two currents. A switchable bias voltage source is coupled to the gate only during the on state of the output MOSFET to set the gate voltage of the output MOSFET. The current output of the current source is quickly and accurately changed. A reference MOSFET is not directly coupled to the output MOSFET, so there are no slow settling components coupled to the gate of the output MOSFET.

Abstract: A mode determination apparatus in a semiconductor apparatus includes a first condition detection block configured to generate a first condition signal in response to a clock enable signal activated when the semiconductor apparatus enters a dynamic voltage scaling mode, a second condition detection block configured to generate a second condition signal in response to an external high voltage in the dynamic voltage scaling mode, the external high voltage having a voltage level in the dynamic voltage scaling mode different from a voltage level in a normal mode, and a signal processing block configured to generate a dynamic voltage scaling mode signal in response to the first condition signal and the second condition signal.

Abstract: In a first pair of stacked PMOS devices comprising a first PMOS device and a second PMOS device, a first pumping circuit is coupled between a gate of the first PMOS device and a P pre-driver signal. In a second pair of stacked NMOS devices comprising a first NMOS device and a second NMOS device, a second pumping circuit is coupled between a gate of the first NMOS device and an N pre-driver signal. The pumping circuits recognizing the transition from the pre-driver signals provide a voltage to the gate of the first PMOS device and of the first NMOS device so that the first PMOS and NMOS devices are turned on better. As a result, their voltage Vds peaks are suppressed to a safe level; the devices avoid hot-carrier degradations; and their lifetimes are prolonged.

Abstract: A design structure embodied in a machine readable medium used in a design process includes a current mirror circuit that includes a reference current source that generates a reference current, a reference transistor, a mirror transistor and a ratioed body bias feedback unit. The reference transistor has a first node that is coupled to the output of the reference current source, a gate that is coupled to the first node and a second node coupled to a common voltage. The mirror transistor has a gate coupled to the first node. The ratioed body bias feedback unit generates a body bias voltage coupled to the body of the reference transistor and the body of the mirror transistor. The ratioed body bias feedback unit is configured to adjust the body bias voltage in relationship to the common voltage so that the reference transistor and the mirror transistor each have a threshold voltage within a predefined range.

Abstract: There is provided a current switching circuit that adds additional current in accordance with an intensity of output current to input current of a current mirror at a rising edge of the output current of the current mirror. The current switching circuit includes a MOS transistor outputting the additional current upon receiving ON potential at a gate terminal, and a slope of a leading edge waveform of a pulse signal providing the ON potential is controlled in accordance with the intensity of the output current.

Abstract: An equalization circuit includes a first differential amplifier having first and second transistors, and a first differential high-pass filter coupled to respective gate terminals of the first and second transistors. A source terminal of the first transistor is coupled to a first input node, and a source terminal of the second transistor is coupled to the second input node. The equalization circuit further includes a second differential amplifier having third and fourth transistors, and a second differential high-pass filter coupled to respective gate terminals of each of the third and fourth transistors. A source terminal of the third transistor is coupled to the first input node, and a source terminal of the second transistor is coupled to the second input node. Using such a circuit, continuous time decision feedback equalization may be performed.

Abstract: A fuse circuit includes a control signal generation unit configured to generate a control signal that is enabled after a moment when a power-up signal is enabled, a potential control unit configured to control potentials of both ends of a fuse in response to the control signal, and a fuse output unit configured to be initialized in response to the power-up signal and output a fuse signal in response to whether the fuse is cut or not.

Abstract: A complex filter for processing an in-phase signal and a quadrature-phase signal includes a first low-pass filter, a second low-pass filter, a connection unit between the first low-pass filter and the second low-pass filter, a first compensation resistor and a second compensation resistor. The first compensation resistor and the second compensation resistor are interlacedly coupled to input resistors of the first low-pass filter and the second low-pass filter.

Abstract: A front-end module comprises a plurality of chips that includes first and second functional blocks and an interconnection circuit. The first functional block is formed using a first process type and includes a digital control circuit that generates a digital control signal in response to an external control signal from outside the front end module. The second functional block is formed using a second process type and includes a digitally controlled circuit controlled by the digital control signal generated by the first functional block. The second process type is different from the first process type. The interconnection circuit couples the digital control circuit and the digitally controlled circuit to provide the digital control signal to the digitally controlled circuit. In one aspect, the first functional block may be a low noise amplifier formed by a pseudomorphic high electron mobility transistor process.

Abstract: An apparatus and methodology for operating an automatic darkening filter (ADF) eye protection device alternately applies an operating voltage to a pair of control terminals of an ADF device circuit in a continuing sequence, where a first polarity voltage is applied to the pair of terminals and then reversed. A delay period is provided between application of the alternating polarities. In some embodiments ground potential is applied to both terminals of the pair of terminals during the delay period.

Abstract: An antifuse circuit includes a protection circuit. The antifuse circuit receives a program voltage using a non-connection (NC) pin or ball of a semiconductor device. The protection circuit prevents an unintended voltage lower than the program voltage from being applied to the antifuse circuit.