Abstract: The present invention provides a method of manufacturing a package structure. An array chip including a plurality of first dies is provided. A wafer including a plurality of second dies is provided. A package step is carried out to package the array chip onto the wafer so as to electrically connect the first die and the second die. The present invention further provides a semiconductor wafer and a package structure.

Abstract: Embodiments of the subject invention relate to a method and apparatus for infrared (IR) detection. Organic layers can be utilized to produce a phototransistor for the detection of IR radiation. The wavelength range of the IR detector can be modified by incorporating materials sensitive to photons of different wavelengths. Quantum dots of materials sensitive to photons of different wavelengths than the host organic material of the absorbing layer of the phototransistor can be incorporated into the absorbing layer so as to enhance the absorption of photons having wavelengths associated with the material of the quantum dots. A photoconductor structure can be used instead of a phototransistor. The photoconductor can incorporate PbSe or PbS quantum dots. The photoconductor can incorporate organic materials and part of an OLED structure. A detected IR image can be displayed to a user. Organic materials can be used to create an organic light-emitting device.

Abstract: A pixel structure and an organic light emitting display are disclosed. The pixel structure includes a plurality of pixels which includes a plurality of sub-pixels. At least one pixel forms a pixel unit, and longitudinally adjacent pixel units are arranged in a vertical mirror image, and/or laterally adjacent pixel units are arranged in a horizontal mirror image. The present disclosure may increase the area of mask opening during evaporation, reduce the difficulty of mask production process, and reduce the evaporation process difficulty by a reasonable pixel arrangement structure and allowing sub-pixels of adjacent pixels to share one mask opening to evaporate. It does not need to preset a gap during evaporating the sub-pixels of adjacent pixels of the mask, thereby a real high PPI is achieved while keeping the opening ratio. In addition, the present disclosure can further increase the strength of the mask.

Abstract: An apparatus for compensating for a position information error of a resolver includes: a resolver-digital converter configured to generate a corresponding output angle by estimating resolver position information from a resolver output signal; and a position error compensation learner configured to determine a position error component in a corresponding electric angular velocity of the resolver output signal using the resolver output signal and the output angle and to convert the position error component to a position error component in an electric angular velocity 0. The resolver-digital converter compensates for an error by reflecting the position error component in the electric angular velocity 0 in the error between a position angle of the resolver output signal and the output angle.

Abstract: A semiconductor device includes an active fin extending in a first direction on a substrate, a gate electrode intersecting the active fin and extending in a second direction, source/drain regions disposed on the active fin on both sides of the gate electrode, and a contact plug disposed on the source/drain regions. The contact plug has at least one side extending in the second direction which has a step portion having a step shape.

Abstract: A method and apparatus for activity tracking based on time domain and frequency domain processing are disclosed. Embodiments according to the present invention are used to improve the accuracy of activity detection and step counting. The activity tracking starts from sample collection to generate 3-D accelerometer data. By pre-processing, the 3-D accelerometer data is calibrated and filtered. Then, the dominant component is calculated and statistical attributes or features used for activity detection are extracted. The statistical attributes are derived from time domain sensor data, frequency domain transformed data, or both. A classifier is developed using representative training data set. The activity detector determines the current activity status based on the statistical attributes and the classifier. To further refine the activity, post-processing is performed on the activity status.

Abstract: An organic light emitting display device includes substrates, connection substrates, sub-pixel structures, a thin film encapsulation structure, and a reflection pattern. The substrates each has a pixel region, and is spaced apart from each other. The pixel region includes sub-pixel regions and reflective region surrounding the sub-pixel regions. The connection substrates connect adjacent substrates among the substrates. The sub-pixel structures are disposed in the sub-pixel regions on the substrates each. The thin film encapsulation structure is disposed on the sub-pixel structures. The reflection pattern is disposed in the reflective region on the thin film encapsulation structure.

Abstract: The invention discloses a package structure made of the combination of a metallic substrate and a lead frame. In one embodiment, a recess is formed in the metallic substrate and a first conductive element having at least one first I/O terminal is bonded in the recess. A lead frame is formed on the metallic substrate and comprises a plurality of electrical connections to connect with said at least one first I/O terminal of the first conductive element. In another embodiment, another conductive element is disposed in the vacancy of the lead frame. The invention also discloses a method for manufacturing a package structure made of the combination of a metallic substrate and a lead frame.

Abstract: A method of forming a fin-type field effect transistor (FinFET) can comprise forming at least one fin having an active region and a non-active region. Thereafter, a nitride is deposited on the fin. A dummy gate and nitride mask are formed on the fin over the nitride. Oxide spacers are formed on sidewalls of the dummy gate. The nitride is removed from the fin. Thereafter, a source region and a drain region are formed in the active region of the at least one fin. The result is a more reliable finFET without any possible pinch-off problems and fin erosion. Other embodiments are also described herein.

Abstract: An avalanche photodiode includes: a first contact layer; a light absorbing layer located on the first contact layer and having a multi-quantum well structure; a first electric field control layer located on the light absorbing layer; and a carrier multiplication layer located on the first electric field control layer. At least one of the multi-quantum well structure includes a well layer that includes Ga1-xAlxN (0?X?0.3), and a barrier layer that includes Ga1-xAlxN (0.7?X?1) and a doping portion doped with a p-type dopant.

Abstract: A Web-based system and method creates one or more qualitatively distinct process plans for machining a part. The surfaces of the part are modeled and parameters for a plurality of CNC machining tools are obtained, including the orientations along which the tool cuts away raw material. A maximal set of translations for each tool is also obtained, where each translation includes a collision-free orientation of the tool and a maximal machinable volume of material removable from the part in that orientation. A search engine navigates through a hierarchically-structured search space that starts at an initial state and transitions to successive states based on actions that satisfy a cost constraint function. Each state and each action includes a tool, orientation of the tool, and a maximal machinable volume. The search ends when a goal condition is satisfied. The actions constitute the process plan.

Abstract: A ship's speed meter for measuring a speed relative to the water of a ship 10, the ship's speed meter including a wave transmitter 1 for emitting a sound wave toward a sea bottom 20, a wave receiver 2 for detecting a plurality of reflected waves, which are reflected waves of the sound wave having been emitted from the wave transmitter 1, reflected by a plurality of reflecting objects 30 positioned at different water depths, and an arithmetic processing unit 4 for calculating a ship's speed relative to the water of the ship 10 based on a frequency difference of the sound wave and the reflected wave.

Abstract: A light emitter device, package, or lamp that comprises and light emitter and a light transmission control material to mask the appearance of at least the light emitter. In one embodiment, a light emitting diode (LED) based lamp is disclosed, comprising an LED light source. A phosphor is arranged remote to the light source such that light emitted from the light source passes through this phosphor and is converted by this phosphor. A light transmission control material is applied at least partially outside the LED light source and the phosphor to reversibly mask the appearance of the LED light source and the phosphor. The light transmission control material is less masking when the LED light source is active. A method for masking the appearance of inactive light emitters is also disclosed that comprising providing at least one light emitter.

Abstract: Systems, devices, and methods for adjusting tuning settings of tunable components, such as tunable capacitors, can be configured for calibrating a tunable component. Specifically, the systems, devices and methods can measure a device response for one or more inputs to a tunable component, store a calibration code in a non-volatile memory that characterizes the device response of the tunable component, and adjust a tuning setting of the tunable component based on the calibration code to achieve a desired response of the tunable component.

Abstract: An organic light-emitting display device includes a first substrate having transmitting regions and pixel regions separated from each other by the transmitting regions, a plurality of thin film transistors on the first substrate in the pixel regions, a passivation layer covering the plurality of thin film transistors, a plurality of pixel electrodes on the passivation layer and electrically connected to the thin film transistors, the pixel electrodes being in the pixel regions and overlapping the thin film transistors, an opposite electrode in the transmitting regions and the pixel regions, the opposite electrode facing the plurality of pixel electrodes and being configured to transmit light, an organic emission layer interposed between the pixel electrodes and the opposite electrode, and a color filter in corresponding pixel regions.

Abstract: Provided is a flexible organic electroluminescent device and a method for fabricating the same. In the flexible electroluminescent device, line hole patterns are formed on surfaces of a plurality of inorganic layers positioned in a pad region in which a flexible printed circuit board is connected to prevent a path of cracks caused by repeated bending and spreading of the organic electroluminescent device from spreading to the interior of the device.

Abstract: Techniques are described for real-time phase detection. For the phase detection, a signal is correlated with a frequency component of a frequency band whose phase is being detected, and the correlation includes predominantly decreasing weighting of past portions of the signals.

Abstract: Systems including a processor and a memory device in communication with the processor include an array of non-volatile memory cells configured in a NAND architecture. The array includes a plurality of series-coupled first non-volatile memory cells, each first non-volatile memory cell curving around a first curved side of a substantially vertical pillar and terminating at an isolation region, and a plurality of series-coupled second non-volatile memory cells, each second non-volatile memory cell curving around a second curved side of the substantially vertical pillar and terminating at the isolation region. Respective ones of the first non-volatile memory cells are respectively at same vertical levels as respective ones of the second non-volatile memory cells.

Abstract: An OLED display panel and a display device are provided. An image sensor is added below OLED light-emitting devices, a light shielding layer including at least one pinhole imaging region is added between the image sensor and the OLED light emitting device, with the pinhole imaging region corresponding to a gap position between the OLED light-emitting devices in the light shielding layer and staggered from light shielding parts in a signal routing and a control device, an object located above the OLED display panel is imaged on the image sensor.

Abstract: Various embodiments provide semiconductor structures and methods for forming the same. In an exemplary structure, a substrate has a device region, a seal ring region surrounding the device region, and a dielectric layer disposed thereon. A first seal ring structure is located within the dielectric layer on the seal ring region, and includes a plurality of first connection layers overlappingly disposed and separated by the dielectric layer. At least one first connection layer is formed by a plurality of discrete sub-connection layers. The first seal ring structure further includes a plurality of first conductive plugs between vertically adjacent first connection layers. A top of each first conductive plug is connected to an upper first connection layer. A bottom of each first conductive plug between at least two vertically adjacent first connection layers extends into the dielectric layer between horizontally adjacent sub-connection layers of a lower first connection layer.