Patents Examined by Wai-Sing Louie
  • Single crystal nitride semiconductor material on conductive substrate using substrate decomposition prevention layer for nitride light emitting device
    Patent number: 8115221
    Abstract: A light-emitting device is provided with a substrate decomposition prevention layer using as a matrix at least one selected from the group consisting of boron nitride (B—N), silicon carbide (Si—C), and silicon carbon nitride (Si—C—N), and patterned into a predetermined shape; an n-type nitride clad layer formed on the substrate decomposition prevention layer; a nitride active layer formed on the n-type nitride clad layer; a p-type nitride clad layer formed on the nitride active layer; a p-type ohmic contact layer formed on the p-type nitride clad layer; a p-type electrode pad formed on the p-type ohmic contact layer; an n-type ohmic contact layer electrically connected to the n-type nitride clad layer by means of a patterned region of the substrate decomposition prevention layer; and an n-type electrode pad formed beneath the n-type ohmic contact layer.
    Type: Grant
    Filed: July 31, 2006
    Date of Patent: February 14, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: June O Song
  • Solid-state imaging device with channel stop region with multiple impurity regions in depth direction and method for manufacturing the same
    Patent number: 8115268
    Abstract: Channel stop sections formed by multiple times of impurity ion implanting processes. Four-layer impurity regions are formed across the depth of a semiconductor substrate (across the depth of the bulk), so that a P-type impurity region is formed deep in the semiconductor substrate; thus, incorrect movement of electric charges is prevented. Other four-layer impurity regions of another channel stop section are decreased in width step by step across the depth of the substrate, so that the reduction of a charge storage region of a light receiving section due to the dispersion of P-type impurity in the channel stop section is prevented in the depth of the substrate.
    Type: Grant
    Filed: August 7, 2009
    Date of Patent: February 14, 2012
    Assignee: Sony Corporation
    Inventor: Kiyoshi Hirata
  • Array substrate of liquid crystal display and method for fabricating the same
    Patent number: 8110829
    Abstract: A thin film transistor (TFT) for a liquid crystal display device includes a gate electrode, a source electrode, a drain electrode, an active region including a first semiconductor layer and a second semiconductor layer interposed within the first semiconductor layer, and an ohmic contact layer formed on the active region, wherein the source and drain electrodes are formed on the ohmic contact layer.
    Type: Grant
    Filed: December 30, 2008
    Date of Patent: February 7, 2012
    Assignee: LG Display Co., Ltd.
    Inventors: Yong Soo Cho, Chan Ki Ha, Byoung Ho Lim, Cheol Se Kim, Kyo Ho Moon, Kwang Sik Oh, Eung Do Kim, Jae Hyung Jo, Min Jae Lee
  • Recessed metering standoffs for airfoil baffle
    Patent number: 8109724
    Abstract: An internally cooled airfoil comprises an airfoil body, a baffle and a plurality of standoffs. The airfoil body is shaped to form leading and trailing edges, and pressure and suction sides surrounding an internal cooling channel. The baffle is disposed within the internal cooling channel and comprises a liner body having a perimeter shaped to correspond to the shape of the internal cooling channel and to form a cooling air supply duct. The baffle includes a plurality of cooling holes extending through the liner body to direct cooling air from the supply duct into the internal cooling channel. The standoffs maintain minimum spacing between the liner body and the airfoil body. In one embodiment, the standoffs are recessed into a surface of either the baffle or the airfoil body. In another embodiment, the standoffs are elongated to meter flow between the liner body and the airfoil body.
    Type: Grant
    Filed: March 26, 2009
    Date of Patent: February 7, 2012
    Assignee: United Technologies Corporation
    Inventors: Stacy T. Malecki, Tracy A. Propheter-Hinckley, Amanda Jean Learned, Shawn J. Gregg
  • Organic semiconductor compositions including plasticizers
    Patent number: 8106386
    Abstract: A composition, comprising a solid mixture of organic semiconductor molecules and plasticizer molecules.
    Type: Grant
    Filed: December 28, 2006
    Date of Patent: January 31, 2012
    Assignee: Alcatel Lucent
    Inventors: Oleksandr Sydorenko, Subramanian Vaidyanathan
  • Organic light-emitting display apparatus
    Patent number: 8101979
    Abstract: An organic light-emitting display apparatus includes a plurality of pixels arranged on a substrate, each pixel includes: a display region including at least one pixel thin film transistor and an organic light-emitting device electrically connected to the pixel thin film transistor; and a sensor region electrically connected to the display region to affect an image display of the display region.
    Type: Grant
    Filed: March 20, 2008
    Date of Patent: January 24, 2012
    Assignee: Samsung Mobile Display Co., Ltd.
    Inventor: Jong-Hyun Choi
  • Back-illuminated, thin photodiode arrays with isolating etched trenches between elements
    Patent number: 8101981
    Abstract: Back-illuminated, thin photodiode arrays with trench isolation. The trenches are formed on one or both sides of a substrate, and after doping the sides of the trenches, are filled to provide electrical isolation between adjacent photodiodes. Various embodiments of the photodiode arrays and methods of forming such arrays are disclosed.
    Type: Grant
    Filed: August 8, 2008
    Date of Patent: January 24, 2012
    Assignee: Array Optronix, Inc.
    Inventors: Alexander O. Goushcha, George Papadopoulos, Perry A. Denning
  • Charge trapping devices with field distribution layer over tunneling barrier
    Patent number: 8101989
    Abstract: A memory cell comprising: a semiconductor substrate with a surface with a source region and a drain region disposed below the surface of the substrate and separated by a channel region; a tunneling barrier dielectric structure with an effective oxide thickness of greater than 3 nanometers disposed above the channel region; a conductive layer disposed above the tunneling barrier dielectric structure and above the channel region; a charge trapping structure disposed above the conductive layer and above the channel region; a top dielectric structure disposed above the charge trapping structure and above the channel region; and a top conductive layer disposed above the top dielectric structure and above the channel region are described along with devices thereof and methods for manufacturing.
    Type: Grant
    Filed: May 31, 2007
    Date of Patent: January 24, 2012
    Assignee: Macronix International Co., Ltd.
    Inventor: Hang-Ting Lue
  • Light-emission device, method of manufacturing same, electro-optical device and electronic device
    Patent number: 8101946
    Abstract: An organic EL display unit is manufactured in an efficient manner. A light emission device (1000) is manufactured by bonding together a driving circuit substrate (100) formed with driving circuit constituted by thin film transistors 11, and a light emission substrate (300) comprising a successively laminated transparent electrode layer 31, bank layer 32 made from insulating material, positive hole injection layer 33, organic EL layer 34 and cathode layer 36.
    Type: Grant
    Filed: May 18, 2009
    Date of Patent: January 24, 2012
    Assignee: Seiko Epson Corporation
    Inventors: Satoshi Inoue, Tatsuya Shimoda, Satoru Miyashita
  • Microphone unit and sound input apparatus
    Patent number: 8098853
    Abstract: A microphone unit includes: a partition member, including a vibration film configured to be vibrated by sound; a housing, defining an inner space, and formed with a first opening and a second opening, the inner space being divided into a first space and a second space by the partition member, the first space adapted to be communicated with an outer space via the first opening, and the second space adapted to be communicated with the outer space via the second opening; and a shutter, configured to close one of the first and second openings; and an amplifier, configured to: amplify an electric signal at a first gain when the shutter closes the one of the first and second openings; and amplify the electric signal at a second gain that is larger than the first gain when first and second openings are opened.
    Type: Grant
    Filed: December 1, 2008
    Date of Patent: January 17, 2012
    Assignees: Funai Electric Co., Ltd., Funai Electric Advanced Applied Technology Research Institute Inc.
    Inventors: Fuminori Tanaka, Ryusuke Horibe, Shigeo Maeda, Takeshi Inoda, Rikuo Takano, Kiyoshi Sugiyama, Toshimi Fukuoka, Masatoshi Ono
  • Image sensor with micro-lenses of varying focal lengths
    Patent number: 8097890
    Abstract: An image sensor having a plurality of micro-lenses disposed on a semiconductor substrate. A first micro-lens has a different focal length, height, shape, curvature, thickness, etc., than a second micro-lens. The image sensor may be back side illuminated or front side illuminated.
    Type: Grant
    Filed: February 11, 2008
    Date of Patent: January 17, 2012
    Assignee: OmniVision Technologies, Inc.
    Inventors: WeiDong Qian, Hsin-Chih Tai, Vincent Venezia, Howard E. Rhodes
  • Method for manufacturing semiconductor device with improved short channel effect of a PMOS and stabilized current of a NMOS
    Patent number: 8097517
    Abstract: The present invention relates to a semiconductor device which is capable of simultaneously improving a short channel effect of a PMOS and the current of an NMOS and a method for manufacturing the same. The semiconductor device includes first and second gates formed over first and second areas of a semiconductor substrate, respectively; and first and second junction areas formed in a portion of the semiconductor substrate corresponding to both sides of the first gate and a portion of the semiconductor substrate corresponding to both sides of the second gate, and including a projection, respectively, wherein the projection of the first junction area has a height higher than the height of the projection of the second junction area, and the second junction area is formed such that it has a depth from the surface of the semiconductor substrate deeper than the depth of the first junction area.
    Type: Grant
    Filed: June 1, 2010
    Date of Patent: January 17, 2012
    Assignee: Hynix Semiconductor Inc.
    Inventor: Min Jung Shin
  • LED array
    Patent number: 8093614
    Abstract: An illuminator (1) has bare semiconductor die light emitting diodes (7) on pads (11) of Ag/Ni/Ti material. A Si wafer (13) has a rough upper surface, and this roughness is carried through an oxide layer (12) and the pads (11) to provide a rough but reflective upper surface of the pads (11), thus forming a diffuser. Epoxy encapsulant (9) is deposited in a layer over the diodes (7) and the pads (11), and it is index matched with a top diffuser plate (8) of opal glass.
    Type: Grant
    Filed: December 4, 2009
    Date of Patent: January 10, 2012
    Assignee: Phoseon Technology, Inc.
    Inventors: Jules Braddell, Kieran Kavanagh
  • Solid-state imaging device
    Patent number: 8093672
    Abstract: Provided is a manufacturing method of a solid-state imaging device, which is able to realize a solid-state imaging device whose reflection prevention coating is even and that does not have image noise in case of adopting a spincoating method in applying a material of the reflection prevention coating onto microlenses of the solid-state imaging device. In the solid-state imaging device 1 according to the present invention, a barrier wall pattern 7 is formed, as a step alleviating structure, in dicing areas 5X formed between adjacent imaging areas 9. The barrier wall pattern 7 has a rectangular sectional form. With use of the barrier wall pattern 7 in the spincoating method, reflection prevention coating 8 is coated onto the microlenses 6 more evenly than in conventional cases.
    Type: Grant
    Filed: September 20, 2006
    Date of Patent: January 10, 2012
    Assignee: Panasonic Corporation
    Inventors: Tomoki Masuda, Toshihiro Higuchi, Yasuo Takeuchi, Tomoko Komatsu
  • Remote auditory spatial communication aid
    Patent number: 8094834
    Abstract: The present invention provides a means for two or more remotely-located individuals to communicate information about the spatial coordinates of a location of mutual interest in a more rapid, robust, and intuitive manner than is possible with any current voice communication system.
    Type: Grant
    Filed: November 14, 2008
    Date of Patent: January 10, 2012
    Assignee: The United States of America as represented by the Secretary of the Air Force
    Inventor: Douglas S. Brungart
  • Thin film array panel and manufacturing method thereof
    Patent number: 8093595
    Abstract: A method of manufacturing a thin film array panel is provided, which includes: forming a gate line formed on a substrate; forming a gate insulating layer on the gate line; forming a semiconductor layer on the gate insulating layer; forming an ohmic contact layer on the semiconductor layer; forming a data line and a drain electrode disposed at least on the ohmic contact layer, forming an oxide on the data line; etching the ohmic contact layer using the data line and the drain electrode as an etch mask; and forming a pixel electrode connected to the drain electrode.
    Type: Grant
    Filed: October 30, 2009
    Date of Patent: January 10, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sang-Gab Kim, Sung-Chul Kang, Ho-Min Kang, In-Ho Song, Hee-Hwan Choe
  • Liquid crystal display device and manufacturing method therefor
    Patent number: 8089158
    Abstract: The present invention includes a liquid crystal display device having an oxide film having high adhesiveness to a substrate to thereby prevent oxidation of a wiring material or the like, and includes, an electrode or a terminal electrode having high conductivity, and a manufacturing method therefor. Consequently, in the present invention, a liquid crystal display device has an electrode terminal of a TFT substrate, wherein the electrode is formed on an insulator and is comprised of a conductive layer mainly consisting of copper and an oxide covering an outer part, further the oxide is a layered structure of transparent electrodes, the layered portion having ohmic contact, and the oxide mainly consists of manganese oxide.
    Type: Grant
    Filed: May 29, 2009
    Date of Patent: January 3, 2012
    Assignee: Advanced Interconnect Materials, LLC
    Inventors: Junichi Koike, Hideaki Kawakami
  • Light emitting device
    Patent number: 8089066
    Abstract: To provide a light emitting device high in reliability with a pixel portion having high definition with a large screen. According to a light emitting device of the present invention, on an insulator (24) provided between pixel electrodes, an auxiliary electrode (21) made of a metal film is formed, whereby a conductive layer (20) made of a transparent conductive film in contact with the auxiliary electrode can be made low in resistance and thin. Also, the auxiliary electrode (21) is used to achieve connection with an electrode on a lower layer, whereby the electrode can be led out with the transparent conductive film formed on an EL layer. Further, a protective film (32) made of a film containing hydrogen and a silicon nitride film which are laminated is formed, whereby high reliability can be achieved.
    Type: Grant
    Filed: March 16, 2010
    Date of Patent: January 3, 2012
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Masaaki Hiroki, Masakazu Murakami, Hideaki Kuwabara
  • Signal separator, method for determining output signals on the basis of microphone signals, and computer program
    Patent number: 8090111
    Abstract: A signal separator, a method and computer product for determining a first output signal describing an audio content of a useful-signal source in a first microphone signal, and for determining a second output signal describing an audio content of the useful-signal source in a second microphone signal.
    Type: Grant
    Filed: June 12, 2007
    Date of Patent: January 3, 2012
    Assignees: Siemens Audiologische Technik GmbH, Friedrich-Alexander-Universität Erlangen-Nürnberg
    Inventors: Robert Aichner, Herbert Buchner, Walter Kellermann
  • Organic light emitting display including an auxiliary electrode
    Patent number: 8084772
    Abstract: Disclosed are an organic light emitting display and a method of manufacturing the same. The organic light emitting includes a first substrate, a first electrode, an organic light emitting layer, and a second electrode. The first substrate includes a pixel region showing an image and a peripheral region surrounding the pixel region. The first electrode is formed in the pixel region of the first substrate. The organic light emitting layer is formed on the first electrode. The second electrode is formed on the organic light emitting layer and extends to the peripheral region. An auxiliary electrode is formed on the second electrode to contact the second electrode on an entire surface of the first substrate, thereby applying a voltage having the same voltage level as that of the second electrode.
    Type: Grant
    Filed: April 15, 2009
    Date of Patent: December 27, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Ji-Hye Eom, Kwang-Sub Shin, Young-Il Kim, Sun-Min Kim, Doo-Hyung Woo