Abstract: After formation of gate structures over semiconductor fins and prior to formation of raised active regions, a directional ion beam is employed to form a dielectric material portion on end walls of semiconductor fins that are perpendicular to the lengthwise direction of the semiconductor fins. The angle of the directional ion beam is selected to be with a vertical plane including the lengthwise direction of the semiconductor fins, thereby avoiding formation of the dielectric material portion on lengthwise sidewalls of the semiconductor fins. Selective epitaxy of semiconductor material is performed to grow raised active regions from sidewall surfaces of the semiconductor fins. Optionally, horizontal portions of the dielectric material portion may be removed prior to the selective epitaxy process. Further, the dielectric material portion may optionally be removed after the selective epitaxy process.

Abstract: A device for crimping a radially expandable and collapsible prosthetic valve comprises a coiled wire frame having a longitudinal opening extending from a proximal end to a distal end thereof. The opening has a first state and a second state, the opening in the first state having a first diameter dimensioned to receive the prosthetic valve in an expanded or partially crimped configuration therein, and the opening in the second state having a second diameter dimensioned to receive the prosthetic valve in a crimped configuration. The coiled wire frame has a first end coupled to a first member and a second end coupled to a second member. The first member is movable relative to the second member to convert the coiled wire frame from the first state to the second state.

Abstract: A multilayer interlayer structure having a first and second polyvinyl acetal (poly(vinyl acetal)) layer and a cellulose ester layer having a thickness of at least 10 mils disposed between the first and second poly(vinyl acetal) layers. The cellulose ester layer can have a higher storage modulus and/or higher Tg than at least one of the poly(vinyl acetal) layers. The interlayer structure is useful to make glass panels having high stiffness and which possess good optical clarity for a variety of applications, including outdoor structural applications.

Abstract: In one representative embodiment, a steerable catheter device comprises a shaft comprising a proximal portion, a distal portion, and a pull-wire lumen that extends at least partially through the proximal and distal portions. A pull wire extends through the pull-wire lumen and has a proximal end portion and a distal end portion, wherein the distal end portion of pull wire is fixed to the distal end portion of the shaft. An adjustment mechanism is operatively connected to the proximal end portion of the pull wire and configured to increase and decrease tension in the pull wire to adjust the curvature of the distal portion of the shaft. An axially non-compressible pull-wire sleeve extends co-axially through the pull-wire lumen and over the pull wire.

Abstract: An monolithic interlayer with high stiffness and when laminated into a glass panel, the glass panel exhibits good clarity, while maintaining the processability of a polyvinyl acetal, such as polyvinyl butyral resin used to make the monolithic interlayer. The monolithic interlayer comprising a polymer blend of: (A) polyvinyl acetal (e.g. PVB); and (B) one or more cellulose esters. The polymer blend increases the structural strength to the monolithic interlayer by increasing the E? modulus of the monolithic interlayer while optionally maintaining good optical clarity.

Abstract: A system for reception of electromagnetic waves in spectrum in which interference occurs comprising at least one transmitter; at least one receiver configured to receive the received signal; a first memory portion configured to store data relating to a point target response; a spectrum estimator configured to estimate the frequencies at which interfering signals occur; at least one processor configured to generate an estimation of the interfering signals at the frequencies estimated by the spectrum estimator; a second memory portion operatively connected to the at least one processor configured to store the estimation of the components of the interfering signals; the at least one processor configured to substantially reduce or eliminate radio frequency interfering signals from the received signal utilizing the point target response and the estimation of the interfering signals; and a method to substantially reduce or eliminate radio frequency interfering signals from for image data.

Abstract: After formation of gate structures over semiconductor fins and prior to formation of raised active regions, a directional ion beam is employed to form a dielectric material portion on end walls of semiconductor fins that are perpendicular to the lengthwise direction of the semiconductor fins. The angle of the directional ion beam is selected to be with a vertical plane including the lengthwise direction of the semiconductor fins, thereby avoiding formation of the dielectric material portion on lengthwise sidewalls of the semiconductor fins. Selective epitaxy of semiconductor material is performed to grow raised active regions from sidewall surfaces of the semiconductor fins. Optionally, horizontal portions of the dielectric material portion may be removed prior to the selective epitaxy process. Further, the dielectric material portion may optionally be removed after the selective epitaxy process.

Abstract: Described herein are systems and methods from delivering prosthetic devices, such as prosthetic heart valves, through the body and into the heart for implantation therein. The prosthetic devices delivered with the delivery systems disclosed herein are, for example, radially expandable from a radially compressed state mounted on the delivery system to a radially expanded state for implantation using an inflatable balloon of the delivery system. Exemplary delivery routes through the body and into the heart include transfemoral routes, transapical routes, and transaortic routes, among others.

Abstract: Angled directional ion beams are directed to sidewalls of a gate structure that straddles at least one semiconductor fin. The directions of the angled directional ion beams are contained within a vertical plane that is parallel to the sidewalls of the at least one semiconductor. A pair of gate spacers are formed on sidewalls of the gate structure by accumulation of the deposited dielectric material from the angled directional ion beams and without use of an anisotropic etch, while the sidewalls of the semiconductor fins parallel to the directional ion beams remain physically exposed. A selective epitaxy process can be performed to form raised active regions by growing a semiconductor material from the sidewalls of the semiconductor fins.

Abstract: Disclosed herein are composite materials, ionic liquid compositions for preparing the composite materials, and methods for using the composite materials prepared from the ionic liquid compositions. The composite materials typically include structural polysaccharides and preferably include macrocyclic compounds. The composite materials may be prepared from ionic liquid compositions comprising the structural polysaccharides and preferably the macrocyclic compounds dissolved in the ionic liquid, where the ionic liquid is removed from the ionic liquid compositions to obtain the composite materials.

Abstract: A device for crimping a radially expandable and collapsible prosthetic valve comprises a coiled wire frame having a longitudinal opening extending from a proximal end to a distal end thereof. The opening has a first state and a second state, the opening in the first state having a first diameter dimensioned to receive the prosthetic valve in an expanded or partially crimped configuration therein, and the opening in the second state having a second diameter dimensioned to receive the prosthetic valve in a crimped configuration. The coiled wire frame has a first end coupled to a first member and a second end coupled to a second member. The first member is movable relative to the second member to convert the coiled wire frame from the first state to the second state.

Abstract: Embodiments of this invention are directed to substituted polyaniline nanofibers and methods of synthesizing and using the same. The invention is also directed to polyaniline derivatives that can be synthesized without the need for templates or functional dopants by using an initiator as part of a reaction mixture.

Abstract: After formation of gate structures over semiconductor fins and prior to formation of raised active regions, a directional ion beam is employed to form a dielectric material portion on end walls of semiconductor fins that are perpendicular to the lengthwise direction of the semiconductor fins. The angle of the directional ion beam is selected to be with a vertical plane including the lengthwise direction of the semiconductor fins, thereby avoiding formation of the dielectric material portion on lengthwise sidewalls of the semiconductor fins. Selective epitaxy of semiconductor material is performed to grow raised active regions from sidewall surfaces of the semiconductor fins. Optionally, horizontal portions of the dielectric material portion may be removed prior to the selective epitaxy process. Further, the dielectric material portion may optionally be removed after the selective epitaxy process.

Abstract: After formation of gate structures over semiconductor fins and prior to formation of raised active regions, a directional ion beam is employed to form a dielectric material portion on end walls of semiconductor fins that are perpendicular to the lengthwise direction of the semiconductor fins. The angle of the directional ion beam is selected to be with a vertical plane including the lengthwise direction of the semiconductor fins, thereby avoiding formation of the dielectric material portion on lengthwise sidewalls of the semiconductor fins. Selective epitaxy of semiconductor material is performed to grow raised active regions from sidewall surfaces of the semiconductor fins. Optionally, horizontal portions of the dielectric material portion may be removed prior to the selective epitaxy process. Further, the dielectric material portion may optionally be removed after the selective epitaxy process.

Abstract: After formation of gate structures over semiconductor fins and prior to formation of raised active regions, a directional ion beam is employed to form a dielectric material portion on end walls of semiconductor fins that are perpendicular to the lengthwise direction of the semiconductor fins. The angle of the directional ion beam is selected to be with a vertical plane including the lengthwise direction of the semiconductor fins, thereby avoiding formation of the dielectric material portion on lengthwise sidewalls of the semiconductor fins. Selective epitaxy of semiconductor material is performed to grow raised active regions from sidewall surfaces of the semiconductor fins. Optionally, horizontal portions of the dielectric material portion may be removed prior to the selective epitaxy process. Further, the dielectric material portion may optionally be removed after the selective epitaxy process.

Abstract: A device is created by forming a layer of dielectric material on a silicon-containing region of a semiconductor substrate. An opening is created through the layer of dielectric material, the opening having a bottom and exposing the silicon-containing region. A metal stack is formed within the opening. The metal stack includes at least a first metal film on the silicon-containing region and a second gettering metal film on the first metal film. The metal stack is annealed to cause oxygen to migrate from the substrate to the gettering metal film. A first liner is formed within the opening. A fill metal is deposited in the opening.

Abstract: Particular embodiments described herein provide for an electronic device that can be configured to determine that an unobtrusive gesture has been received on a first electronic device and send a signal to a second electronic device in response to the unobtrusive gesture. The first electronic device can also be configured to receive a signal from the second electronic device, determine an unobtrusive output in response to the signal, and generate an unobtrusive notification in response to the received signal. In an example, the first electronic device is a part of jewelry worn by a user.

Abstract: A method of forming a trench in an oxide layer; where the oxide layer is formed on top of a nitride layer. The trench is formed using an iterative etching technique until the nitride layer is exposed, each iterative etching step includes; using an isotropic etching technique to remove a portion of the oxide layer, the isotropic etching technique produces a byproduct that remains along a sidewall and a bottom of the trench, then using an anisotropic etching technique to remove the salt from the bottom of the trench, leaving salt on the sidewalls of the trench.

Abstract: A method and system for reception of electromagnetic waves in which interference with radio frequencies of other electronics devices occurs comprising; at least one transmitter for transmitting electromagnetic radiation at a wide range of frequencies; at least one receiver fix receiving the received signal comprising the first electromagnetic radiation and RF interfering signal data; a first memory portion for storing transmitted signal waveforms; a second memory portion for storing RF interfering signal data; a switch for periodically allowing the RF interfering signal data to enter the second memory portion from the receiver; the at least one processor operating to process and compare the received signal containing RE signal data and first electromagnetic radiation by matching the received signal against data relating to the transmitted signal waveforms from the first memory portion and RF interfering signal data from the second memory portion, and extract the RF interfering signal data.

Abstract: Technologies for communicating sensor data from a mobile computing device to a client computing device include a Universal Serial Bus over Internet Protocol (“UoIP”) architecture. The UoIP architecture virtualizes a non-USB sensor device on the mobile computing device as a virtual sensor, and allows the client computing device to recognize the virtual sensor as a USB device. As a result, sensor data obtained by the non-USB sensor device of the mobile computing device can be accessed and used by an application running on the client computing device.