Abstract: A heart valve delivery apparatus includes a valve carrying member. A prosthetic valve is crimped onto the valve carrying member at a location that is distal or proximal to the balloon member, thereby providing a smaller profile delivery apparatus.

Abstract: Angled directional ion beams are directed to sidewalls of a gate structure that straddles at least one semiconductor fin. The directions of the angled directional ion beams are contained within a vertical plane that is parallel to the sidewalls of the at least one semiconductor. A pair of gate spacers are formed on sidewalls of the gate structure by accumulation of the deposited dielectric material from the angled directional ion beams and without use of an anisotropic etch, while the sidewalls of the semiconductor fins parallel to the directional ion beams remain physically exposed. A selective epitaxy process can be performed to form raised active regions by growing a semiconductor material from the sidewalls of the semiconductor fins.

Abstract: A device is created by forming a layer of dielectric material on a silicon-containing region of a semiconductor substrate. An opening is created through the layer of dielectric material, the opening having a bottom and exposing the silicon-containing region. A metal stack is formed within the opening. The metal stack includes at least a first metal film on the silicon-containing region and a second gettering metal film on the first metal film. The metal stack is annealed to cause oxygen to migrate from the substrate to the gettering metal film. A first liner is formed within the opening. A fill metal is deposited in the opening.

Abstract: Angled directional ion beams are directed to sidewalls of a gate structure that straddles at least one semiconductor fin. The directions of the angled directional ion beams are contained within a vertical plane that is parallel to the sidewalls of the at least one semiconductor. A pair of gate spacers are formed on sidewalls of the gate structure by accumulation of the deposited dielectric material from the angled directional ion beams and without use of an anisotropic etch, while the sidewalls of the semiconductor fins parallel to the directional ion beams remain physically exposed. A selective epitaxy process can be performed to form raised active regions by growing a semiconductor material from the sidewalls of the semiconductor fins.

Abstract: After formation of gate structures over semiconductor fins and prior to formation of raised active regions, a directional ion beam is employed to form a dielectric material portion on end walls of semiconductor fins that are perpendicular to the lengthwise direction of the semiconductor fins. The angle of the directional ion beam is selected to be with a vertical plane including the lengthwise direction of the semiconductor fins, thereby avoiding formation of the dielectric material portion on lengthwise sidewalls of the semiconductor fins. Selective epitaxy of semiconductor material is performed to grow raised active regions from sidewall surfaces of the semiconductor fins. Optionally, horizontal portions of the dielectric material portion may be removed prior to the selective epitaxy process. Further, the dielectric material portion may optionally be removed after the selective epitaxy process.

Abstract: A device for crimping a radially expandable and collapsible prosthetic valve comprises a coiled wire frame having a longitudinal opening extending from a proximal end to a distal end thereof The opening has a first state and a second state, the opening in the first state having a first diameter dimensioned to receive the prosthetic valve in an expanded or partially crimped configuration therein, and the opening in the second state having a second diameter dimensioned to receive the prosthetic valve in a crimped configuration. The coiled wire frame has a first end coupled to a first member and a second end coupled to a second member. The first member is movable relative to the second member to convert the coiled wire frame from the first state to the second state.

Abstract: Methods, apparatus, systems and articles of manufacture to provide power to devices are disclosed. An example method includes determining an indication of visual media consumption of a display by a person; and enabling delivery of power to a device associated with the person in response to determining that the visual media consumption is associated with the person.

Abstract: An implantable medical electrical lead includes a plurality of conductors that extend continuously, without any intermediary junctions, between a plurality of electrodes and a corresponding plurality of contact members of an in-line connector terminal. A junction between each conductor and the corresponding contact member is preferably formed by first fitting a conductive sleeve, which is coupled to a proximal portion of the conductor, into an eyelet feature of the contact member, which is mounted on a strut member, and then welding the sleeve to the contact member at a pre-formed slot of the contact member, which extends along an external recessed surface thereof. The assembly of the connector terminal preferably completes the construction of the lead, wherein the proximal portion of each conductor is positioned in a helical path, which extends between an elongate body of the lead and the connector terminal, and along which a grip zone is formed.

Abstract: A device for crimping a radially expandable and collapsible prosthetic valve comprises a coiled wire frame having a longitudinal opening extending from a proximal end to a distal end thereof. The opening has a first state and a second state, the opening in the first state having a first diameter dimensioned to receive the prosthetic valve in an expanded or partially crimped configuration therein, and the opening in the second state having a second diameter dimensioned to receive the prosthetic valve in a crimped configuration. The coiled wire frame has a first end coupled to a first member and a second end coupled to a second member. The first member is movable relative to the second member to convert the coiled wire frame from the first state to the second state.

Abstract: Techniques for segmenting an object are provided. The techniques include capturing an image of an object, dividing the image into one or more blocks, computing a confidence value for each of the one or more blocks, and eliminating one or more blocks from consideration based on the confidence value for each of the one or more blocks.

Abstract: A method of manufacturing a semiconductor structure includes forming a raised source-drain region in a semiconductor substrate adjacent to a dummy gate and forming a chemical mechanical polish (CMP) stop layer over the gate structure and above a top surface of the semiconductor substrate. A first ILD layer is formed above the CMP stop layer. The first ILD layer is removed to a portion of the CMP stop layer located above the gate structure and a portion of the CMP stop layer located above the gate structure is also removed to expose the dummy gate. The dummy gate is replaced with a metal gate and the metal gate is polished until the CMP stop layer located above the raised source-drain region is reached.

Abstract: An exemplary system for crimping a prosthetic valve comprises a radially expandable and compressible prosthetic valve, a crimping device positioned around the valve and configured to reduce the diameter of the valve to a delivery configuration, and a sterile package enclosing the valve and the crimping device. The valve can be pre-assembled in a partially crimped configuration within the crimping device. After removing the sterile packaging, the crimping device can be used to crimp the valve from the partially crimped configuration to the delivery configuration, such as by twisting a knob on the crimping device. The system can further comprise at least a portion of a delivery catheter within the sterile package, wherein the valve is pre-mounted on or adjacent to an inflatable balloon of the delivery catheter, such that the valve can be crimped onto the delivery catheter using the crimping device.

Abstract: A system for reception of electromagnetic waves in spectrum in which interference occurs comprising at least one transmitter; at least one receiver configured to receive the received signal; a first memory portion configured to store data relating to a point target response; a spectrum estimator configured to estimate the frequencies at which interfering signals occur; at least one processor configured to generate an estimation of the interfering signals at the frequencies estimated by the spectrum estimator; a second memory portion operatively connected to the at least one processor configured to store the estimation of the components of the interfering signals; the at least one processor configured to substantially reduce or eliminate radio frequency interfering signals from the received signal utilizing the point target response and the estimation of the interfering signals; and a method to substantially reduce or eliminate radio frequency interfering signals from for image data.

Abstract: A method and system of reconstructing data signals from one of incomplete measurements comprising a receiver for receiving data signals, an ADC system operatively connected to the receiver that digitizes the received data signal at a slower rate than the Nyquist rate to obtain sparse measurements; first and second dictionaries comprising a plurality of time shifted responses recovered from the data signal; the first dictionary comprising time shifted versions of the previously observed data signals which are sampled at or above the Nyquist minimum sample rate; the second dictionary comprising time shifted versions are sampled below the Nyquist minimum, and at least one processor for reconstruction of the waveform signals by transforming the sub-Nyquist digitized output using the first and second dictionaries to produce the data signal.

Abstract: Methods of forming semiconductor structures having channel regions strained by encapsulated silicide formation. Embodiments include forming a transistor, depositing an interlevel dielectric (ILD) layer above the transistor, forming contact recesses exposing portions of source/drain regions of the transistor, forming metal-rich silicide layers on the exposed portions of the source/drain regions, forming metal contacts in the contact recesses above the metal-rich silicide layers, and converting the metal-rich silicide layer to a silicon-rich silicide layer. In other embodiments, the metal-rich silicide layers are formed on the source/drain regions prior to ILD layer deposition.

Abstract: Methods and systems may provide for obtaining a query image of a scene, wherein the query image includes embedded information and represents the scene at a time of capture. The embedded information may include location data and perspective data. Additionally, user input may be received, wherein the user input identifies a different time than the time of capture. A time-shifted image of the scene may be obtained based on the user input and the embedded information in the query image. Crowd sources and/or other public information sources may also be used to obtain the time-shifted image. In one example, the time-shifted image represents the scene at the different time.

Abstract: Methods of forming semiconductor structures having channel regions strained by encapsulated silicide formation. Embodiments include forming a transistor, depositing an interlevel dielectric (ILD) layer above the transistor, forming contact recesses exposing portions of source/drain regions of the transistor, forming metal-rich silicide layers on the exposed portions of the source/drain regions, forming metal contacts in the contact recesses above the metal-rich silicide layers, and converting the metal-rich silicide layer to a silicon-rich silicide layer. In other embodiments, the metal-rich silicide layers are formed on the source/drain regions prior to ILD layer deposition.

Abstract: Techniques for segmenting an object are provided. The techniques include capturing an image of an object, dividing the image into one or more blocks, computing a confidence value for each of the one or more blocks, and eliminating one or more blocks from consideration based on the confidence value for each of the one or more blocks.

Abstract: Techniques for segmenting an object at a self-checkout are provided. The techniques include capturing an image of an object at a self-checkout, dividing the image into one or more blocks, computing a confidence value for each of the one or more blocks, and eliminating one or more blocks from consideration based on the confidence value for each of the one or more blocks, wherein the one or more blocks remaining map to a region of the image containing the object.

Abstract: A shielded inductor in an integrated circuit includes conductive loops disposed on a deep-well noise shield for isolating a noise coupling between the conductive loops and the substrate of the integrated circuit. The deep-well noise shield includes a first well disposed within a second well that is disposed within the substrate of the integrated circuit. The second well includes a peripheral well, a deep-well layer, and slot wells. The peripheral well surrounds a periphery of the first well. The peripheral well and the deep-well layer are coupled together to provide two p-n junctions that separate the first well and the substrate. The slot wells are distributed inside the periphery of the first well. Each slot well and the deep-well layer are coupled together. Each slot well has a width and a length that is at least three times the width.