Abstract: Methods and systems may provide for obtaining a query image of a scene, wherein the query image includes embedded information and represents the scene at a time of capture. The embedded information may include location data and perspective data. Additionally, user input may be received, wherein the user input identifies a different time than the time of capture. A time-shifted image of the scene may be obtained based on the user input and the embedded information in the query image. Crowd sources and/or other public information sources may also be used to obtain the time-shifted image. In one example, the time-shifted image represents the scene at the different time.

Abstract: After formation of gate structures over semiconductor fins and prior to formation of raised active regions, a directional ion beam is employed to form a dielectric material portion on end walls of semiconductor fins that are perpendicular to the lengthwise direction of the semiconductor fins. The angle of the directional ion beam is selected to be with a vertical plane including the lengthwise direction of the semiconductor fins, thereby avoiding formation of the dielectric material portion on lengthwise sidewalls of the semiconductor fins. Selective epitaxy of semiconductor material is performed to grow raised active regions from sidewall surfaces of the semiconductor fins. Optionally, horizontal portions of the dielectric material portion may be removed prior to the selective epitaxy process. Further, the dielectric material portion may optionally be removed after the selective epitaxy process.

Abstract: A projectile having a fin deployment system disposed about its circumference. The fins are initially contained by a fin cover that is removed by aerodynamic force. The fins are then rotated around a rotational axis parallel to and offset from the central axial axis of the projectile body by the centrifugal forces created by the rotation of the projectile as the projectile passes through a barrel of a gun system or tube launcher. The fin deployment system can also have locking systems that lock the fins in the deployed position and prevent the fins from rotating back into the retracted position after deployment.

Abstract: Novel compounds are provided which are 11-beta-hydroxysteroid dehydrogenase type I inhibitors. 11-beta-hydroxysteroid dehydrogenase type I inhibitors are useful in treating, preventing, or slowing the progression of diseases requiring 11-beta-hydroxysteroid dehydrogenase type I inhibitor therapy. These novel compounds of formula I: or stereoisomers or pharmaceutically acceptable salts thereof, wherein R* is an isotopically labeled hydroxypropyl moiety.

Abstract: Various embodiments are generally directed to an apparatus, method and other techniques to retrieve data from a non-volatile memory, and to read a memory cell of the non-volatile memory at a first set of sense conditions comprising a multiplicity of sense conditions. Embodiments also include an apparatus, method and other techniques to set a first set of bits in an encoded output, the first set of bits comprising a logical state bit to indicate a logical state of the memory cell and one or more additional bits in the encoded output to indicate accuracy of the logical state bit based upon results of the read at the first set of sense conditions, the first set of sense conditions comprising a greater number than that of the first set of bits.

Abstract: This is a device for occluding a space, for example an aneurysm, within the body. In particular, the device comprising a metallic vaso-occlusive device and expandable fibrous elements. The devices may be placed in a desired site within a mammal.

Abstract: A device is created by forming a layer of dielectric material on a silicon-containing region of a semiconductor substrate. An opening is created through the layer of dielectric material, the opening having a bottom and exposing the silicon-containing region. A metal stack is formed within the opening. The metal stack includes at least a first metal film on the silicon-containing region and a second gettering metal film on the first metal film. The metal stack is annealed to cause oxygen to migrate from the substrate to the gettering metal film. A first liner is formed within the opening. A fill metal is deposited in the opening.

Abstract: A polymer blend material comprising: (i) a lignin component having a weight-average molecular weight of up to 1,000,000 g/mol; and (ii) an acrylonitrile-containing copolymer rubber component comprising acrylonitrile units in combination with diene monomer units, and having an acrylonitrile content of at least 20 mol %; wherein said lignin component is present in an amount of at least 5 wt % and up to about 95 wt % by total weight of components (i) and (ii); and said polymer blend material possesses a tensile yield stress of at least 5 MPa, or a tensile stress of at least 5 MPa at 10% elongation, or a tensile stress of at least 5 MPa at 100% elongation. Methods for producing the polymer blend, molded forms thereof, and articles thereof, are also described.

Abstract: After formation of gate structures over semiconductor fins and prior to formation of raised active regions, a directional ion beam is employed to form a dielectric material portion on end walls of semiconductor fins that are perpendicular to the lengthwise direction of the semiconductor fins. The angle of the directional ion beam is selected to be with a vertical plane including the lengthwise direction of the semiconductor fins, thereby avoiding formation of the dielectric material portion on lengthwise sidewalls of the semiconductor fins. Selective epitaxy of semiconductor material is performed to grow raised active regions from sidewall surfaces of the semiconductor fins. Optionally, horizontal portions of the dielectric material portion may be removed prior to the selective epitaxy process. Further, the dielectric material portion may optionally be removed after the selective epitaxy process.

Abstract: A semiconductor device includes a trench region in an interconnect level dielectric layer. A silicide layer is on the bottom of the trench region. Opposing minor sides of the trench region include a spacer layer, but the central portion of the trench region is substantially free from the spacer layer. The spacer layer is formed using an angled gas cluster ion beam.

Abstract: Disclosed herein are devices for improving coaption of the mitral valve leaflets to reduce or eliminate mitral valve regurgitation. The devices may be used to perform mitral valve annuloplasty, or to serve as a docking station for a transcatheter prosthetic heart valve. The various embodiments of devices are configured for percutaneous and, in some cases, transvascular delivery. Delivery systems useful for routing the devices to the mitral valve are also disclosed, including catheters, balloons and/or mechanical expansion systems. The devices themselves include at least one tissue penetrating member. Methods of delivery include partially embedding the devices in the mitral valve annulus via at least one tissue penetrating member. Tissue penetrating members may be embedded into the tissue in a simultaneous or a nearly simultaneous fashion. Upon embedding, the devices employ various expansion and/or contraction features to adjust the mitral valve diameter.

Abstract: A system for reception of electromagnetic waves in a spectrum in which interference with radio frequencies of other electronics devices occurs comprising a transmitter; at least one receiver configured to receive the received signal; each received signal organized into a digital vector; at least one memory portion configured to store a plurality of received signals in a vector form; the vectors being combined into a matrix, each vector of the matrix being a digital data record representing a received signal; at least one processor operatively connected to the at least one memory portion; the at least one processor configured to estimate that portion of the received signal attributable to noise; the at least one processor operating to jointly estimate a minimal number of distinctive noise patterns and minimize the simplicity of the data of interest; the at least processor operating to process the noise and data of interest separately.

Abstract: A shirt and lower undergarment are disclosed that provide a system for keeping a shirt in a tucked-in position. The shirt having strips of fabric attached to the interior on the front, back and sides with snaps on the strips of fabric. The lower undergarment disclosed may also have snaps attached using strips of fabric, with the snaps on the undergarment positioned to receive the snaps on the shirt and hold the shirt in a tucked position.

Abstract: A semiconductor device includes a trench region in an interconnect level dielectric layer. A silicide layer is on the bottom of the trench region. Opposing minor sides of the trench region include a spacer layer, but the central portion of the trench region is substantially free from the spacer layer. The spacer layer is formed using an angled gas cluster ion beam.

Abstract: A method of forming a trench in an oxide layer; where the oxide layer is formed on top of a nitride layer. The trench is formed using an iterative etching technique until the nitride layer is exposed, each iterative etching step includes; using an isotropic etching technique to remove a portion of the oxide layer, the isotropic etching technique produces a byproduct that remains along a sidewall and a bottom of the trench, then using an anisotropic etching technique to remove the salt from the bottom of the trench, leaving salt on the sidewalls of the trench.

Abstract: After formation of gate structures over semiconductor fins and prior to formation of raised active regions, a directional ion beam is employed to form a dielectric material portion on end walls of semiconductor fins that are perpendicular to the lengthwise direction of the semiconductor fins. The angle of the directional ion beam is selected to be with a vertical plane including the lengthwise direction of the semiconductor fins, thereby avoiding formation of the dielectric material portion on lengthwise sidewalls of the semiconductor fins. Selective epitaxy of semiconductor material is performed to grow raised active regions from sidewall surfaces of the semiconductor fins. Optionally, horizontal portions of the dielectric material portion may be removed prior to the selective epitaxy process. Further, the dielectric material portion may optionally be removed after the selective epitaxy process.

Abstract: Novel compounds are provided which are 11-beta-hydroxysteroid dehydrogenase type I inhibitors. 11-beta-hydroxysteroid dehydrogenase type I inhibitors are useful in treating, preventing, or slowing the progression of diseases requiring 11-beta-hydroxysteroid dehydrogenase type I inhibitor therapy. These novel compounds of formula I: or stereoisomers or pharmaceutically acceptable salts thereof, wherein R* is an isotopically labeled hydroxypropyl moiety.

Abstract: Described herein are systems and methods from delivering prosthetic devices, such as prosthetic heart valves, through the body and into the heart for implantation therein. The prosthetic devices delivered with the delivery systems disclosed herein are, for example, radially expandable from a radially compressed state mounted on the delivery system to a radially expanded state for implantation using an inflatable balloon of the delivery system. Exemplary delivery routes through the body and into the heart include transfemoral routes, transapical routes, and transaortic routes, among others.

Abstract: A delivery system for stabilizing a catheter shaft across an aortic arch can include one or more stabilizing members configured to fix or stabilize the position of the catheter relative to the aortic arch of a patient.

Abstract: A device is created by forming a layer of dielectric material on a silicon-containing region of a semiconductor substrate. An opening is created through the layer of dielectric material, the opening having a bottom and exposing the silicon-containing region. A metal stack is formed within the opening. The metal stack includes at least a first metal film on the silicon-containing region and a second gettering metal film on the first metal film. The metal stack is annealed to cause oxygen to migrate from the substrate to the gettering metal film. A first liner is formed within the opening. A fill metal is deposited in the opening.