Abstract: A non-volatile memory system receives a request to read data. That request includes a quality of service indication. The memory system performs a read process that satisfies the quality of service indication and identifies a set of data with errors. The memory system returns the set of data with errors in response to the request.

Abstract: A data storage device includes a non-volatile memory and a controller coupled to the non-volatile memory. The controller is configured to initiate a read operation to retrieve data from the non-volatile memory. The controller is also configured to suspend the read operation and to determine context information associated with the suspended read operation. The controller is further configured, in response to detecting a condition indicating that the read operation is to resume, to resume the suspended read operation using the context information.

Abstract: A data storage device includes a non-volatile memory and a controller coupled to the non-volatile memory. The controller is configured to initiate a read operation to retrieve data from the non-volatile memory. The controller is also configured to suspend the read operation and to determine context information associated with the suspended read operation. The controller is further configured, in response to detecting a condition indicating that the read operation is to resume, to resume the suspended read operation using the context information.

Abstract: A data storage device includes a set of latches, read/write circuitry, a memory, and an interleaver. The set of latches is configured to receive data. The read/write circuitry is coupled to the set of latches. The memory is coupled to the read/write circuitry. The interleaver is configured to interleave the data and to cause the read/write circuitry to program the interleaved data to the memory. The set of latches, the read/write circuitry, the memory, and the interleaver are integrated within a common die.

Abstract: A method performed by a controller includes initiating a first data write operation and an erase operation on a portion of a non-volatile memory. The first data write operation corresponds to a first write resolution. The method includes initiating a second data write operation to write test data to the portion of the non-volatile memory. The second data write operation corresponds to a second write resolution that is greater than the first write resolution. The method also includes reading a representation of the test data from the portion of the non-volatile memory.

Abstract: A device includes a memory device coupled to an error correction code (ECC) decoder. The ECC decoder is configured to generate syndromes corresponding to a representation of a codeword received from the memory device and to perform a single decoding operation on a representation of data included in the representation of the codeword. The single decoding operation is configured to change at least one bit of the representation of the data based on a majority value of a group of the syndromes that are associated with the bit.

Abstract: A device includes a memory and a controller including a data shaping engine. The data shaping engine is configured to apply a mapping to input data that includes one or more m-tuples of bits to generate transformed data. The transformed data includes one or more n-tuples of bits, and n is greater than m. A relationship of a gray coding of m-tuples to a gray coding of n-tuples is indicated by the mapping. The input data includes a first number of bit values that represent a particular logical state, and the transformed data includes a second number of bit values that represent the particular logical state, the second number of bit values being less than the first number of bit values.

Abstract: A data storage device may include a memory and a controller that includes an error correction coding (ECC) decoder configured to operate in a plurality of decoding modes. The controller also includes a bit error rate estimator configured to determine, based on data received from the memory, bit error rate estimates for ECC codewords from the memory. The controller also includes a data path management unit configured to reorder the codewords based on the bit error rate estimates and to provide the reordered codewords to the ECC decoder.

Abstract: A data storage device includes a memory die. The memory die includes a resistive random access memory (ReRAM) having a first portion and a second portion that is adjacent to the first portion. A method includes determining whether to access the second portion of the ReRAM in response to initiating a first operation targeting the first portion of the ReRAM. The method further includes initiating a second operation that senses information stored at the second portion to generate sensed information in response to determining to access the second portion. The method further includes initiating a third operation to rewrite the information at the ReRAM in response to detecting an indication of a disturb condition based on the sensed information.

Abstract: A data storage device includes a controller and a non-volatile memory coupled to the controller. The controller is configured to generate first parity information based on first data and to generate second parity information based on second data. The non-volatile memory is configured to store the first data and the second data. The data storage device also includes a buffer configured to store the first parity information. The controller is further configured to generate joint parity information associated with the first data and the second data in response to a combined data size of the first data and the second data satisfying a threshold.

Abstract: A method performed at a data storage device includes adjusting a first read voltage and a second read voltage to form sets of read voltages. First representations of data are read from a logical page in the non-volatile memory according to the sets of read voltages. The first representations of the data correspond to multiple values of the first read voltage and the second read voltage. The first representations of the data are stored in a memory and second representations of the data are generated based on the first representations. A value of the first read voltage is selected based on syndrome weights corresponding to the second representations.

Abstract: A method performed in a data storage device includes reading first representations of data from a non-volatile memory according to multiple sets of read voltages. A first set of read voltages are selected based on the first representations. The method also include generating reliability information that is based on a first generated representation of the data and a second generated representation of the data. The first generated representation of the data corresponds to reading the data from the non-volatile memory according to the first set of read voltages, and the second generated representation of the data corresponds to reading the data from the non-volatile memory according to a second set of read voltages that are offset from the first set of read voltages.

Abstract: A data storage device includes a shaping engine and a compression engine. The shaping engine is configured to shape first data to generate second data. The compression engine is configured to compress the second data to generate third data.

Abstract: A method performed by a controller includes initiating a first data write operation and an erase operation on a portion of a non-volatile memory. The first data write operation corresponds to a first write resolution. The method includes initiating a second data write operation to write test data to the portion of the non-volatile memory. The second data write operation corresponds to a second write resolution that is greater than the first write resolution. The method also includes reading a representation of the test data from the portion of the non-volatile memory.

Abstract: A device includes a memory device coupled to an error correction code (ECC) decoder. The ECC decoder is configured to generate syndromes corresponding to a representation of a codeword received from the memory device and to perform a single decoding operation on a representation of data included in the representation of the codeword. The single decoding operation is configured to change at least one bit of the representation of the data based on a majority value of a group of the syndromes that are associated with the bit.

Abstract: A data storage device includes a controller and a non-volatile memory coupled to the controller. The controller is configured to generate first parity information based on first data and to generate second parity information based on second data. The non-volatile memory is configured to store the first data and the second data. The data storage device also includes a buffer configured to store the first parity information. The controller is further configured to generate joint parity information associated with the first data and the second data in response to a combined data size of the first data and the second data satisfying a threshold.

Abstract: A data storage device includes a set of latches, read/write circuitry, a memory, and an interleaver. The set of latches is configured to receive data. The read/write circuitry is coupled to the set of latches. The memory is coupled to the read/write circuitry. The interleaver is configured to interleave the data and to cause the read/write circuitry to program the interleaved data to the memory. The set of latches, the read/write circuitry, the memory, and the interleaver are integrated within a common die.

Abstract: A system and method of programming user data into a memory cell includes receiving a first user data to be programmed in a memory controller, selecting a memory cell for programming the first user data and measuring at least one health characteristic of the selected memory cell. At least one programming parameter of the selected memory cell is adjusted and the first user data is programmed to the selected memory cell using the adjusted programming parameter corresponding to the selected memory cell.

Abstract: A data storage device includes a resistive random access memory (ReRAM). The data storage device includes read circuitry coupled to a storage element of the ReRAM. The read circuitry is configured to read a data value from the storage element, during a read operation, based on a read current sensed during a first phase of the reading operation and a leakage current sensed during a second phase of the reading operation. The data storage device also includes a controller coupled to the read circuitry. The controller is configured to provide an input value to an error correction coding (ECC) decoder, where the input value includes a hard bit value and a soft bit value. The hard bit value corresponds to the data value, and the soft bit value is at least partially based on the leakage current.

Abstract: A data storage device includes a memory, a first module, and a second module. The first module is configured to sense data stored at the memory to generate a first set of soft bits having a first number of bits. The second module is configured to perform an operation using the first set of soft bits to generate a second set of soft bits having a second number of bits that is less than the first number of bits. In an illustrative implementation, the second set of soft bits is used in connection with a three-stage decoding process to decode a set of hard bits that represents the data.