Patents by Inventor Armin Willmeroth

Armin Willmeroth has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor component and method for producing it
    Patent number: 7973362
    Abstract: A semiconductor component includes a semiconductor body having an edge with an edge zone of a first conductivity type. Charge compensation regions of a second conductivity type are embedded into the edge zone, with the charge compensation regions extending from a top side of the semiconductor component vertically into the semiconductor body. For the number Ns of charge carriers present in a volume Vs between two charge compensation regions that are adjacent in a direction perpendicular to the edge, and for the number Np of charge carriers present in a volume Vp between two charge compensation regions that are adjacent in a direction parallel to the edge, Np>Ns holds true.
    Type: Grant
    Filed: October 3, 2007
    Date of Patent: July 5, 2011
    Assignee: Infineon Technologies Austria AG
    Inventors: Armin Willmeroth, Michael Rueb, Carolin Tolksdorf, Markus Schmitt
  • Semiconductor device with a charge carrier compensation structure and process
    Patent number: 7973359
    Abstract: A semiconductor device with a charge carrier compensation structure. In one embodiment, the semiconductor device has a central cell field with a gate and source structure. At least one bond contact area is electrically coupled to the gate structure or the source structure. A capacitance-increasing field plate is electrically coupled to at least one of the near-surface bond contact areas.
    Type: Grant
    Filed: August 19, 2008
    Date of Patent: July 5, 2011
    Assignee: Infineon Technologies Austria AG
    Inventors: Franz Hirler, Armin Willmeroth, Anton Mauder, Gerald Deboy, Holger Kapels, Carolin Tolksdorf, Frank Pfirsch
  • Integrated circuit including a charge compensation component
    Patent number: 7968919
    Abstract: A charge compensation component having a drift path between two electrodes, an electrode and a counterelectrode, and methods for producing the same. The drift path has drift zones of a first conduction type and charge compensation zones of a complementary conduction type with respect to the first conduction type. A drift path layer doping comprising the volume integral of the doping locations of a horizontal drift path layer of the vertically extending drift path including the drift zone regions and charge compensation zone regions arranged in the drift path layer is greater in the vicinity of the electrodes than in the direction of the center of the drift path.
    Type: Grant
    Filed: December 20, 2007
    Date of Patent: June 28, 2011
    Assignee: Infineon Technologies Austria AG
    Inventors: Armin Willmeroth, Anton Mauder, Stefan Sedlmaier
  • Power Semiconductor Component with Plate Capacitor Structure and Edge Termination
    Publication number: 20110133262
    Abstract: A semiconductor component includes a body with a drift zone, a source zone, a body zone, and a drain zone. A gate forms a MOS structure with the drift zone, with the source zone and with the body zone. An edge termination between the lateral edge and the MOS structure includes a plurality of field rings which enclose the MOS structure. The lateral edge is at the same potential as the drift zone, and the edge termination reduces voltage between the lateral edge and the source zone. A horizontally extending edge plate is disposed at the front side between the lateral edge and the edge termination. The edge plate is at the same potential as the drift zone and forms a plate capacitor structure including a field plate lying above the edge plate.
    Type: Application
    Filed: December 8, 2010
    Publication date: June 9, 2011
    Applicant: INFINEON TECHNOLOGIES AG
    Inventors: Uwe Wahl, Armin Willmeroth
  • Power Semiconductor Component with Plate Capacitor Structure Having an Edge Plate Electrically Connected to Source or Drain Potential
    Publication number: 20110115007
    Abstract: A lateral power semiconductor component has a front side, a rear side and a lateral edge. The component further includes a drift zone of a first conductivity type, a source zone of the first conductivity type, a body zone of a second conductivity type opposite the first conductivity type, and a drain zone of the first conductivity type. A gate forms a MOS structure with the drift zone, the source zone and the body zone. A horizontally extending field plate above each semiconductor region of the power semiconductor component forms a plate capacitor structure with an edge plate lying under the field plate. The edge plate includes a highly doped semiconductor material and is electrically connected to one of a source potential and a drain potential of the power semiconductor component.
    Type: Application
    Filed: December 8, 2010
    Publication date: May 19, 2011
    Applicant: INFINEON TECHNOLOGIES AG
    Inventors: Uwe Wahl, Armin Willmeroth
  • Semiconductor component with a drift zone and a drift control zone
    Patent number: 7943987
    Abstract: A semiconductor component has a drift zone and a drift control zone, a drift control zone dielectric, which is arranged in sections between the drift zone and the drift control zone, and has a first and a second connection zone, which are doped complementarily with respect to one another and which form a pn junction between the drift control zone and a section of the drift zone.
    Type: Grant
    Filed: October 18, 2007
    Date of Patent: May 17, 2011
    Assignee: Infineon Technologies Austria AG
    Inventors: Armin Willmeroth, Anton Mauder, Franz Hirler, Stefan Sedlmaier, Frank Pfirsch
  • Power semiconductor having a lightly doped drift and buffer layer
    Patent number: 7936010
    Abstract: A power semiconductor element having a lightly doped drift and buffer layer is disclosed. One embodiment has, underneath and between deep well regions of a first conductivity type, a lightly doped drift and buffer layer of a second conductivity type. The drift and buffer layer has a minimum vertical extension between a drain contact layer on the adjacent surface of a semiconductor substrate and the bottom of the deepest well region which is at least equal to a minimum lateral distance between the deep well regions. The vertical extension can also be determined such that a total amount of dopant per unit area in the drift and buffer layer is larger than a breakdown charge amount at breakdown voltage.
    Type: Grant
    Filed: December 23, 2008
    Date of Patent: May 3, 2011
    Assignee: Infineon Technologies Austria AG
    Inventors: Markus Zundel, Franz Hirler, Armin Willmeroth
  • MOS TRANSISTOR WITH ELEVATED GATE DRAIN CAPACITY
    Publication number: 20110089481
    Abstract: A MOS transistor having an increased gate-drain capacitance is described. One embodiment provides a drift zone of a first conduction type. At least one transistor cell has a body zone, a source zone separated from the drift zone by the body zone, and a gate electrode, which is arranged adjacent to the body zone and which is dielectrically insulated from the body zone by a gate dielectric. At least one compensation zone of the first conduction type is arranged in the drift zone. At least one feedback electrode is arranged at a distance from the body zone, which is dielectrically insulated from the drift zone by a feedback dielectric and which is electrically conductively connected to the gate electrode.
    Type: Application
    Filed: December 22, 2010
    Publication date: April 21, 2011
    Applicant: INFINEON TECHNOLOGIES AUSTRIA AG
    Inventors: Armin Willmeroth, Michael Treu
  • MOS transistor having an increased gate-drain capacitance
    Patent number: 7910983
    Abstract: A MOS transistor having an increased gate-drain capacitance is described. One embodiment provides a drift zone of a first conduction type. At least one transistor cell has a body zone, a source zone separated from the drift zone by the body zone, and a gate electrode, which is arranged adjacent to the body zone and which is dielectrically insulated from the body zone by a gate dielectric. At least one compensation zone of the first conduction type is arranged in the drift zone. At least one feedback electrode is arranged at a distance from the body zone, which is dielectrically insulated from the drift zone by a feedback dielectric and which is electrically conductively connected to the gate electrode.
    Type: Grant
    Filed: September 30, 2008
    Date of Patent: March 22, 2011
    Assignee: Infineon Technologies Austria AG
    Inventors: Armin Willmeroth, Michael Treu
  • Power semiconductor component with plate capacitor structure
    Patent number: 7872300
    Abstract: A power semiconductor component (1) contains a weakly doped drift zone (9), a drain zone (10) and a MOS structure (12) situated at the front side (2) of the power semiconductor component (1). An edge plate (6) of the first conductivity type is provided at its edge (8) above the drift zone (9). The edge plate (6) is doped more highly than the drift zone (9). Situated above the edge plate (6) is an insulation layer (24) with an overlying field plate (7) made of polysilicon. The field plate (7) forms together with the edge plate (6) a plate capacitor structure which increases the drain-source output capacitance of the power semiconductor component (1), so that fewer radiofrequency interference disturbances are caused by the power semiconductor component (1) during switching.
    Type: Grant
    Filed: May 11, 2006
    Date of Patent: January 18, 2011
    Assignee: Infineon Technologies AG
    Inventors: Uwe Wahl, Armin Willmeroth
  • Semiconductor component and method for producing it
    Patent number: 7863680
    Abstract: A semiconductor component includes a surface region. A modified doping region is provided in the edge region of the cell array. In the surface region or modified doping region the doping concentration is lowered and/or in the surface region or modified doping region the conductivity type is formed such that it is opposite to the conductivity type of the actual semiconductor material region, or in which a field plate region is provided.
    Type: Grant
    Filed: July 3, 2008
    Date of Patent: January 4, 2011
    Assignee: Infineon Technologies AG
    Inventors: Markus Zundel, Rudolf Zelsacher, Franz Hirler, Dietmar Kotz, Hermann Peri, Armin Willmeroth
  • Semiconductor component having a drift zone and a drift control zone
    Patent number: 7825467
    Abstract: A description is given of a normally on semiconductor component having a drift zone, a drift control zone and a drift control zone dielectric arranged between the drift zone and the drift control zone.
    Type: Grant
    Filed: September 30, 2008
    Date of Patent: November 2, 2010
    Assignee: Infineon Technologies Austria AG
    Inventors: Armin Willmeroth, Anton Mauder, Franz Hirler
  • Semiconductor component comprising a drift zone and a drift control zone
    Patent number: 7821033
    Abstract: A semiconductor component is disclosed herein comprising a drift zone and a drift control zone. The drift control zone is arranged adjacent to the drift zone and is dielectrically insulated from the drift zone by a dielectric layer. The drift control zone includes at least one first semiconductor layer and one second semiconductor layer. The first semiconductor layer has a higher charge carrier mobility than the second semiconductor layer.
    Type: Grant
    Filed: February 15, 2007
    Date of Patent: October 26, 2010
    Assignee: Infineon Technologies Austria AG
    Inventors: Stefan Sedlmaier, Anton Mauder, Armin Willmeroth, Franz Hirler
  • Lateral MISFET and method for fabricating it
    Patent number: 7821064
    Abstract: A lateral MISFET having a semiconductor body has a doped semiconductor substrate of a first conduction type and an epitaxial layer of a second conduction type, which is complementary to the first conduction type, the epitaxial layer being provided on the semiconductor substrate. This MISFET has, on the top side of the semiconductor body, a drain, a source, and a gate electrode with gate insulator. A semiconductor zone of the first conduction type is embedded in the epitaxial layer in a manner adjoining the gate insulator, a drift zone of the second conduction type being arranged between the semiconductor zone and the drain electrode in the epitaxial layer. The drift zone has pillar-type regions which are arranged in rows and columns and whose boundary layers have a metal layer which in each case forms a Schottky contact with the material of the drift zone.
    Type: Grant
    Filed: March 14, 2006
    Date of Patent: October 26, 2010
    Assignee: Infineon Technologies Austria AG
    Inventors: Michael Rueb, Markus Schmitt, Carolin Tolksdorf, Uwe Wahl, Armin Willmeroth
  • COMPONENT ARRANGEMENT INCLUDING A MOS TRANSISTOR HAVING A FIELD ELECTRODE
    Publication number: 20100213506
    Abstract: A component arrangement including a MOS transistor having a field electrode is disclosed. One embodiment includes a gate electrode, a drift zone and a field electrode, arranged adjacent to the drift zone and dielectrically insulated from the drift zone by a dielectric layer a charging circuit, having a rectifier element connected between the gate electrode and the field electrode.
    Type: Application
    Filed: May 4, 2010
    Publication date: August 26, 2010
    Applicant: INFINEON TECHNOLOGIES AUSTRIA AG
    Inventors: Armin Willmeroth, Franz Hirler
  • Lateral semiconductor component with a drift zone having at least one field electrode
    Patent number: 7777278
    Abstract: A semiconductor component is described. In one embodiment, the semiconductor component includes a semiconductor body with a first side and a second side. A drift zone is provided, which is arranged in the semiconductor body below the first side and extends in a first lateral direction of the semiconductor body between a first and a second doped terminal zone. At least one field electrode is provided, which is arranged in the drift zone, extends into the drift zone proceeding from the first side and is configured in a manner electrically insulated from the semiconductor body.
    Type: Grant
    Filed: January 25, 2008
    Date of Patent: August 17, 2010
    Assignee: Infineon Technologies AG
    Inventors: Franz Hirler, Armin Willmeroth, Markus Schmitt, Carolin Tolksdorf, Gerald Deboy, Ralf Henninger, Uwe Wahl
  • SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING
    Publication number: 20100181627
    Abstract: A semiconductor device and method for manufacturing. One embodiment provides a semiconductor device including an active cell region and a gate pad region. A conductive gate layer is arranged in the active cell region and a conductive resistor layer is arranged in the gate pad region. The resistor layer includes a resistor region which includes a grid-like pattern of openings formed in the resistor layer. A gate pad metallization is arranged at least partially above the resistor layer and in electrical contact with the resistor layer. An electrical connection is formed between the gate layer and the gate pad metallization, wherein the electrical connection includes the resistor region.
    Type: Application
    Filed: January 16, 2009
    Publication date: July 22, 2010
    Applicant: INFINEON TECHNOLOGIES AUSTRIA AG
    Inventors: Armin Willmeroth, Carolin Tolksdorf
  • Component arrangement including a power semiconductor component having a drift control zone
    Patent number: 7709891
    Abstract: A component arrangement. One embodiment includes a power semiconductor component having a drift zone arranged between a first and a second component zone. A drift control zone is arranged adjacent to the drift zone and is dielectrically insulated from the drift zone by a dielectric layer. A capacitive storage arrangement is coupled to the drift control zone. A charging circuit is coupled between the first component zone and the capacitive storage arrangement.
    Type: Grant
    Filed: January 24, 2008
    Date of Patent: May 4, 2010
    Assignee: Infineon Technologies AG
    Inventors: Anton Mauder, Stefan Sedlmaier, Franz Hirler, Armin Willmeroth, Gerhard Noebauer
  • MOS TRANSISTOR HAVING AN INCREASED GATE-DRAIN CAPACITANCE
    Publication number: 20100078708
    Abstract: A MOS transistor having an increased gate-drain capacitance is described. One embodiment provides a drift zone of a first conduction type. At least one transistor cell has a body zone, a source zone separated from the drift zone by the body zone, and a gate electrode, which is arranged adjacent to the body zone and which s dieletrically insulated from the body zone by a gate dielectric. At least one compensation zone of the first conduction type is arranged in the drift zone. At least one feedback electrode is arranged at a distance from the body zone, which is dielectrically insulated from the drift zone by a feedback dielectric and which is electrically conductively connected to the gate electrode.
    Type: Application
    Filed: September 30, 2008
    Publication date: April 1, 2010
    Applicant: INFINEON TECHNOLOGIES AUSTRIA AG
    Inventors: Armin Willmeroth, Michael Treu
  • Semiconductor component with a drift zone and a drift control zone
    Publication number: 20100078710
    Abstract: A semiconductor component has a drift zone and a drift control zone, a drift control zone dielectric, which is arranged in sections between the drift zone and the drift control zone, and has a first and a second connection zone, which are doped complementarily with respect to one another and which form a pn junction between the drift control zone and a section of the drift zone.
    Type: Application
    Filed: October 18, 2007
    Publication date: April 1, 2010
    Applicant: Infineon Technologies Austria AG
    Inventors: Armin Willmeroth, Anton Mauder, Franz Hirler, Stefan Sedlmaier