Abstract: Conductive plugs (28) are formed in a semiconductor device (10) using a chemical mechanical polishing (CMP) process. A blanket conductive layer (26), for example of tungsten, is deposited in a plug opening (24). The conductive layer is polished back by CMP using a slurry comprised of either copper sulfate (CuSO.sub.4) or copper perchlorate [Cu(ClO.sub.4).sub.2 ] and an abrasive, such as alumina or silica, and water. In another embodiment, a CMP process using such slurries may be used to form conductive interconnects (50) in a semiconductor device (40).

Abstract: There is provided a method of correcting overerased memory cells in a flash EEPROM memory cell after erase so as to produce a narrow threshold voltage distribution width. A ground potential is applied to all of the sources and substrates of the cells in the array of memory cells. First positive pulse voltages are simultaneously applied to each word line in a first timed sequence on a word line by word line basis. A second positive pulse voltage is simultaneously applied to each bit line in a second timed sequence in a bit line by bit line basis when the first positive pulse voltages are being applied to a first word line and is then repeated for each subsequent word line until a last word line is applied.

Abstract: A network system includes a network that detects the presence of a remote terminal connected to a network and determines the functional protocol of the remote terminal. If the remote terminal is an infrared adapter, the network hub provides electrical power to the infrared adapter and continually monitors for the presence of the infrared adapter. Upon removal of the infrared adapter, the network removes electrical power that is applied to a user interface connector that connects to the infrared adapter. If another protocol is detected for the remote terminal, the network hub communicates with the remote terminal in that protocol and converts the data to the protocol of the network.

Abstract: A method for sealing the circumferential edge region of a laminated electrochromic device is disclosed. The method involves cutting a circumferential groove into the edge region of the device at the ion-conducting interface of its substrates. Sealant is then applied to the groove. Sealed devices are also disclosed.

Abstract: A new tungsten compound is formed by reacting ammonium metatungstate with guanidine carbonate. Such a compound can be converted to metallic tungsten, tungsten carbide or oxycarbide, and tungsten nitride or oxynitride. One can also make multiphase composite particles based on molybdenum, tungsten or their compounds (such as carbide or nitride), and at least one other metallic phase, such as cobalt, copper, nickel, iron or silver. The process involves first dispersing particles of a refractory metal or its compounds in a liquid medium, followed by inducing a chemical reaction in the liquid phase to generate a new solid phase which coats or mixes with the dispersed particles. The solid phase includes elements required in the final composite. After removing the liquid phase, the remaining solid is converted by hydrogen reduction into the final products.

Abstract: A method and apparatus for processing data using data compression. During compression, a relationship between a next data word and a previous data word is determined and that relationship is encoded into variable bit-length code words, the bit-length being inversely proportional to the probability of occurrence of the relationship between the data words. The encoded relationships are transmitted rather than the data words themselves. In one embodiment, a look-up table of code words is stored which is indexed according to the possible relationships. A relationship is determined between the previous and next data words and the relationship is matched to the index to find the corresponding code word in the look-up table. The corresponding code word is retrieved from the look-up table, is substituted for the relationship, and is transmitted.

Abstract: A computationally fast, effective method for compressing digital images uses an optimized subsampling process. A set of spatially overlapping spline functions is used as a basis onto which the image data are projected by use of a least-mean-squares criterion. The specified processes can be implemented for compressing and interpolating digital data arrays of N dimensions. Linear, planar and hyperplanar spline functions allow convenient, fast and efficient closed-form optimal compression, which process is easily incorporated into existing digital processing systems. A key advantage of the disclosed method is the fast coding/reconstruction speed, because it involves only FFT or convolution types of processors.

Abstract: A FLASH EPROM cell in accordance with the present invention is disclosed in which the erasure is accomplished under a constant electric field. The FLASH EPROM cell includes a semiconductor device including a source, a drain and a gate and a constant current circuit coupled to the source. The constant current circuit ensures that a constant field is applied to the tunneling oxide of the FLASH EPROM cell during erasure thereof. In so doing, the FLASH EPROM cell can be erased with a minimum of stress to the device. In addition, the FLASH EPROM cell of the present invention can be used with various power supplies without affecting the characteristics thereof. Finally, through the FLASH EPROM cell of the present invention, the short channel effect associated with smaller device sizes can be substantially reduced.

Abstract: Describes an electrochromically active iridium oxide film of iridium, oxygen and nitrogen, wherein the ratio of atomic oxygen to iridium is from 3.2:1 to 3.4:1 and the amount of nitrogen in the film is from 11 to 13 atomic percent. Describes also an electrochromic article, e.g., a plastic article such as a plastic lens, in which the aforedescribed iridium oxide film is paired with a cathodically coloring electrochromic film, such as tungsten oxide.

Abstract: The invention is a novel erase method for erasing flash EEPROM memory devices. A memory cell of such a memory device has a first semiconductor region of one conductivity type formed in a second region of the opposite conductivity type, source and drain regions of the opposite conductivity type formed in the first semiconductor region, and a gate. The second region is formed within a substrate of the one conductivity type. The gate includes a control gate and a floating gate, which retains charge and overlies the first semiconductor region. The erase method of the invention includes the steps of: applying a first voltage of one polarity to the source region and the first and second semiconductor regions; and simultaneously applying a second voltage of the opposite polarity to the gate, whereby any charge on the floating gate tunnels through the floating gate dielectric into both the first region and the source region, thereby removing any charge retained by the floating gate.

Abstract: A local host data processing system operating under the control of a local host operating system includes components of multiple emulating hosted operating systems. The host operating system further include a TCP/IP network protocol stack which couples to the communications facilities of the host system connected to a local area network for communicating with a number of remote host systems. Host and hosted operating systems share the same TCP/IP network protocol stack. A virtual network mechanism is configured within the local host system to be operatively coupled to the host network protocol stack and provide access to well-known port application programs. When so configured, the mechanism functions as another LAN to which multiple virtual host systems are attached for executing applications under control of the emulating hosted operating systems.

Abstract: A host data processing system operating under the control of a host operating system such as an enhanced version of the UNIX operating system on a RISC based hardware platform includes an emulator which runs as an application process for executing emulated system (ES) user application programs. The emulator includes a number of emulated system executive service components including a socket command handler unit and a socket library component operating in shared memory and an interpreter, an emulator monitor call unit (EMCU) and a number of server components operating in host memory. The host operating system further includes a host socket library interface layer (API) which operatively connects through a TCP/IP network protocol stack to the communications facilities of the hardware platform. The socket server components operatively connect ES TCP/IP application programs to the socket library interface layer of the host operating system when such application programs issue standard ES socket library calls.

Abstract: A host data processing system which includes a plurality of input/output devices operates under the control of an enhanced version of the UNIX operating system. The host system includes an emulator which runs as an application process for executing user emulated system (ES) application programs. The emulator includes a number of emulated system executive service components operating in shared memory and an interpreter, an emulator monitor call unit (EMCU) and a number of server facilities operating in the host memory. The ES executive service command handler component is extended to accommodate a number of dual decor commands which invoke host system facilities to execute terminal based commands either synchronously or asynchronously through the automatic creation of host shell mechanisms directly accessible by emulated system users. The server facilities include a network terminal driver (NTD) server for executing emulated system user terminal requests through host system drivers.

Abstract: A barbecue cooker includes a bowl and a cover mounted to the bowl, the bowel having two ears diametrically disposed to an outer peripheral surface thereof, each of the ear having a curved upper surface, a vertical side and a horizontal side, the vertical side having a first flange extending therefrom and the horizontal side having a second flange extending therefrom, the first flange having a first plate extending perpendicularly from an outer edge thereof and the second flange having a second plate extending perpendicularly from an outer edge thereof so as to define a recess between the first flange, the second flange, the first plate, the second plate and an outer surface of the ear, a hole defined in each of the ears, a handgrip pivotally connected between the two holes of the ears such that the handgrip can be snugly received between the first plate and the outer surface of the ear when in a vertical position and snugly received between the second plate and the outer surface of the ear when in a horizonta

Abstract: A local host data processing system operating under the control of a local host operating system includes components of a hosted operating system. The host operating system further include a TCP/IP network protocol stack which couples to the communications facilities of the host system connected to a local area network for communicating with a number of remote host systems. Host and hosted operating systems share the same TCP/IP network protocol stack. A virtual network mechanism is configured within the local host system to be operatively coupled to the host network protocol stack and provide access to well-known port application programs. When so configured, the mechanism functions as another LAN to which the hosted operating system is attached. The mechanism transforms the well-known port identifier of each inbound packet into a non-well-known port identifier in addition to other station address identifier fields.

Abstract: A mold is used to form a polishing pad, wherein the surface of the polishing side of the polishing pad is determined by a primary surface of the mold. Features along the polishing side of a polishing pad may take any one of several different shapes. Channels along the polishing side of the polishing pad allow a smaller pore size to be used. The mold allows more control over the surface of the polishing side, which in turn give more control over polishing characteristics.

Abstract: A FLASH EPROM cell in accordance with the present invention is disclosed in which the erasure is accomplished under a constant electric field. The FLASH EPROM cell includes a semiconductor device including a source, a drain and a gate and a constant current circuit coupled to the source. The constant current circuit ensures that a constant field is applied to the tunneling oxide of the FLASH EPROM cell during erasure thereof. In so doing, the FLASH EPROM cell can be erased with a minimum of stress to the device. In addition, the FLASH EPROM cell of the present invention can be used with various power supplies without affecting the characteristics thereof. Finally, through the FLASH EPROM cell of the present invention, the short channel effect associated with smaller device sizes can be substantially reduced.

Abstract: A smoke detector unit with a fan that creates an airstream which flows through a smoke detector. Both the fan and the smoke detector are located within a housing that is mounted to the fuselage of an airplane. The smoke detector generates an output signal that is provided to an indicator when a threshold level of smoke is detected. The output signal is typically latched by a relay that is also located within the housing.

Abstract: Disclosed is a method for planarizing a metal surface and forming coplanar metal and dielectric layer surfaces with a minimized degree of dishing (metal recess in an oxide cavity or trough) which results from the uneven polishing with a polishing pad. A cavity is formed in a substrate material, such as oxide, and a layer of conductive material such as metal is formed over the cavity and other surfaces of the substrate. Next, a protective layer of material such as silicon dioxide, borophosphosilicate glass (BPSG), silicon nitride, or tetraethylorthosilicate (TEOS), or any insulator or conductor which can be removed at a slower rate than the conductive layer, is formed over the metal surface, the protective layer being not as easily polished as the metal in a chemical mechanical polishing (CMP) process optimized for metal polishing. A first CMP process removes a portion of the protective layer from the underlying metal overburden.

Abstract: A method of depositing a nitrogen-containing electrochromic iridium oxide film by sputtering iridium in an atmosphere comprising oxygen and nitrogen is disclosed for use in producing a transparent electrochromic article. The article includes electroconductive films, e.g., ITO, on two substrates, one of which has a superimposed electrochromic film, e.g., tungsten oxide, and the other of which has superimposed the iridium oxide film of the invention. An ion conductive layer between the electrochromic films completes the article.