Abstract: Polyurethane foams blown with a mixture of water, HCFC-22 or HCFC-141b, and a perfluorinated hydrocarbon having from 3 to 8 carbon atoms yields polyurethane and polyisocyanurate foams having exceptional physical properties, i.e., small and uniform cells, low initial K-factor, low aged K-factor, and high tensile strength. The low initial and aged K-factors are most unexpected when it is considered that significant amounts of water are used to blow the foam.

Abstract: A semiconductor wafer has a surface layer to be planarized in a chemical mechanical polishing (CMP) process. An area of the layer that is higher than another area is altered so that the removal rate is higher. For example, if the surface layer is TEOS oxide, the higher layer may be bombarded with boron and phosphorus to produce BPSG, which has a polishing rate 2-3 times that of the TEOS. Upon CMP planarization, the higher area erodes faster resulting in improved planarization. Alternatively, the lower area may be doped with nitrogen to produce a nitride which is more resistant to CMP, with the same result. Likewise areas, such as tungsten troughs, which tend to be dished by CMP, may be changed to WNx which is more resistant to the tungsten CMP than the adjacent tungsten, eliminating the dishing upon planarization.

Abstract: An IC chemical mechanical planarization (cmp) process incorporating slurry temperature control. Specifically, there is a VCMP process which requires small holders 18. The VCMP process incorporates small quantities of chemicals in the holder, and utilizes a system of closely regulating the heating and cooling of the chemical component of the VCMP process to increase and decrease the chemical reaction, and therefore the speed of the chemical removal of tungsten material.

Abstract: A surface modification process which provides a means of rapidly heating a thin layer of a polymer surface or a thin coating of material on a coated substrate and various surfaces produced by such a process.

Abstract: Low temperature heat curable arylene sulfide copolymer compositions which are particularly suitable for use in coating applications are provided. The compositions basically comprise a first arylene sulfide copolymer having unsubstituted para- and ortho-aromatic sulfide repeating units in the polymer chain, and a second arylene sulfide copolymer having unsubstituted para-aromatic sulfide repeating units and alkyl-substituted aromatic sulfide repeating units in the polymer chain.

Abstract: A process for depositing a thin film of aluminum nitride (AlN) includes sputtering an aluminum target with energetic nitrogen ions generated in a nitrogen plasma. A single gas (i.e. nitrogen) is used as both the reactive gas and as the sputtering gas. The process is especially adapted for forming an etchstop layer for use in forming contact vias through a dielectric layer in semiconductor manufacture. The process is also useful in semiconductor manufacture for forming an aluminum nitride (AlN) film that may be used as a passivation layer, as a ceramic packaging material, as a mask for ion implantation, as a substrate material in hybrid circuits, and as a high bandgap window for GaAs solar cells.

Abstract: An arylene sulfide copolymer and a process for preparing same by contacting a mixture of two structurally different dihaloromatic compounds, at least one organic amide, at least one sulfur-containing compound, and water, and continuous long fiber reinforced plastics containing arylene sulfide copolymer as the polymer matrix or containing arylene sulfide copolymer in a thermoplastic resin matrix.

Abstract: A non-vulcanized thermoplastic composition comprising a polyamide and an elastomeric halogen-containing copolymer of a C.sub.4 to C.sub.7 isomonoolefin and a para-alkylstyrene is prepared by blending the polyamide and elastomeric copolymer in the presence of specified metal compounds in an amount insufficient for vulcanizing the composition. Optionally, the resulting composition may be subjected to vulcanization.

Abstract: A method for forming conductive plugs within an insulation material is described. The inventive process results in a plug of a material such as tungsten which is more even with the insulation layer surface than conventional plug formation techniques. Conventional processes result in recessed plugs which are not easily or reliably coupled with subsequent layers of sputtered aluminum or other conductors. The inventive process uses a two-step chemical mechanical planarization technique. An insulation layer with contact holes is formed, and a metal layer is formed thereover. A polishing pad rotates against the wafer surface while a slurry selective to the metal removes the metal overlying the wafer surface, and also recesses the metal within the contact holes due to the chemical nature and fibrous element of the polishing pad. A second CMP step uses a slurry having an acid or base selective to the insulation material to remove the insulator from around the metal.

Abstract: A method and apparatus for chemically mechanically planarizing (CMP) a semiconductor wafer includes directing acoustic waves at the wafer and receiving reflected acoustic waves from the wafer during the (CMP) process. By analyzing the acoustic waves and reflected acoustic waves a thickness of the wafer can be determined and an endpoint and thickness of films formed on the wafer can be monitored in real time during the (CMP) process. The process parameters of the (CMP) process can then be adjusted as required to improve the uniformity of the process.

Abstract: A thermoplastic composition is provided which comprises a polyamide, a grafted polymer of an isomonoolefin and an alkylstyrene, such as a maleic anhydride-grafted copolymer of isobutylene and para-methylstyrene, and optionally a polyolefin polymer.

Abstract: Poly(arylene sulfide/sulfone) polymers are treated in order to increase melt stability and decrease impurities by contacting the poly(arylene sulfide/sulfone) polymer with a soluble zinc compound and an acidic solution. In one embodiment, the polymer is treated first with the soluble zinc compound, followed by treatment with the acidic solution. In another embodiment, the polymer is treated in one step with a solution comprising a water soluble zinc compound in an acidic solution.

Abstract: Fabrication of spacer supports for use in flat panel displays through a process which involves 1) depositing an insulating material on an electrode plate, 2) optionally, patterning a reflective material superjacent the insulating material, 3) irradiating the electrode plate, and thereby removing the exposed insulating material, 4) optionally, removing the reflective material, and thereby exposing the remaining insulative material which will serve as the spacer supports, after which the plate can be aligned with a complementary electrode plate, and a vacuum formed therebetween.

Abstract: A semiconductor processing method of chemical mechanical polishing a predominately copper containing metal layer on a semiconductor substrate includes, a) providing a chemical mechanical polishing slurry comprising H.sub.2 O, a solid abrasive material, and a third component selected from the group consisting of HNO.sub.3, H.sub.2 SO.sub.4, and AgNO.sub.3 or mixtures thereof; and b) chemical mechanical polishing a predominately copper containing metal layer on a semiconductor substrate with the slurry. Such slurry also constitutes part of the invention. Such slurry may also contain an additional oxidant selected from the group consisting of H.sub.2 O.sub.2, HOCl, KOCl, KMgO.sub.4 and CH.sub.3 COOH or mixtures thereof to form a copper oxide passivating-type layer at the copper surface.

Abstract: A method and system for controlling the depth of removal by polishing of a selected material on a supporting underlayer where it is desired to terminate removal of the selected material, such as tungsten, at the material-underlayer interface. In accordance with this novel method and system, the selected material such as a surface metallization layer is polished to initiate removal thereof in the direction of the material-underlayer interface. A microphone is positioned at a predetermined distance from the wafer to sense acoustical waves generated when the depth of material removal reaches a certain determinable distance from the interface to thereby generate output detection signals. These output detection signals are amplified and then applied to a spectrum analyzer which operates to analyze the sound intensity-versus-frequency characteristic of the acoustical waves received by the microphone.

Abstract: Poly(biphenylene sulfide/poly(phenylene sulfide) copolymers are produced by contacting a p-dihalobenzene and a bis-p-halobiphenyl under polymerization conditions. Additionally a poly(biphenylene sulfide)/poly(phenylene sulfide) copolymer/fiber reinforced composite is provided.

Abstract: A semiconductor processing method of chemical mechanical polishing an aluminum containing metal layer on a semiconductor substrate includes, a) providing a chemical mechanical polishing slurry comprising H.sub.3 PO.sub.4 at from about 0.1% to about 20% by volume; H.sub.2 O.sub.2 at from about 1% to about 30% by volume, H.sub.2 O, and a solid abrasive material; and b) chemical mechanical polishing an aluminum containing metal layer on a semiconductor substrate with the slurry. Such process and slurry are also usable in chemical mechanical polishing of other layers, such as Ti, TiN and TiW materials. Such enables chemical mechanical polishing of a barrier metal/aluminum layer composite in a single polishing step, leading to increased controllability and resulting increased throughput. With respect to aluminum containing metal layers, the H.sub.2 O.sub.2 is understood to cause oxidation to aluminum oxide, which is subsequently removed by both chemical and mechanical action the result of the polish and slurry.

Abstract: Polyethylene terephthalate molding compositions are provided which comprise polyethylene terephthalate, an aliphatic polyester, a warp resisting amount of an arylene sulfide copolymer, filler, and optionally, colorants.

Abstract: An articulated support for an audio amplifier housing comprising a first arm pivotable from a retracted position in the housing to an angularly extended position and then translatable in and out with respect to the housing, and a second arm pivotable at one end from a retracted position in the first arm to an angularly extended position, with an adjustable speaker mount at the other end of the second arm allowing a speaker to be rotated and tilted.

Abstract: A process for selectively electrodepositing a pattern of metal such as copper on a substrate comprises the deposition of two successive layers over the entire substrate, photolithographic patterning of the upper layer, and placement of the exposed part of the first deposited layer to a lower surface potential then the patterned second layer. The metal is then deposited under a periodical modulated voltage signal that is adjusted in reference to the reduction potential of the metal so that any metal deposited on the exposed part of the first layer during the positive duty cycle of the signal is removed during the negative duty cycle while little or none of the metal deposited on the second layer is removed due to the second layer higher surface potential. The remaining exposed part of the first layer is etched away after the electrodeposition process is terminated.