Abstract: The present invention is a surface modification process which provides a means of rapidly heating a thin layer of a polymer surface or a thin coating of material on a coated substrate and various surfaces produced by such a process.

Abstract: A head drum cleaning device for a magnetic recording and reproducing apparatus comprising a head cleaning lever pivotally mounted to a fixed base plate of the apparatus by a pin fixed to the fixed base plate, a cleaning roller rotatably mounted to one end of the head cleaning lever by a pin fixed to the head cleaning lever, a drive member constituted by a part of a slide base of the apparatus and adapted to drive the head cleaning lever, and a head cleaning lever rotating unit operatively connected to the drive member and adapted to pivot the head cleaning lever through two steps, namely, in toward the drum and then in the reverse direction. The head drum cleaning device has a simple construction capable of achieving a smooth cleaning operation, in that the head cleaning lever is actuated by the drive member mounted to the slide base to clean the rotating head drum. The head drum cleaning device can be applied to compact camcorders such as 8 mm camcorders using the slide base.

Abstract: The invention relates to impact modifiers for polyamide compositions which improve the impact strength of the polyamides without adversely affecting the flexural modulus of the composition. The impact modifiers comprise blends of halogenated copolymers of a C.sub.4 to C.sub.7 isomonoolefin and an alkyl/styrene with a polyolefin.

Abstract: A semiconductor processing method of chemical mechanical polishing a predominately copper containing metal layer on a semiconductor substrate includes, a) providing a chemical mechanical polishing slurry comprising H.sub.2 0, a solid abrasive material, and a third component selected from the group consisting of HNO.sub.3, H.sub.2 SO.sub.4, and AgNO.sub.3 or mixtures thereof; and b) chemical mechanical polishing a predominately copper containing metal layer on a semiconductor substrate with the slurry. Such slurry also constitutes part of the invention. Such slurry may also contain an additional oxidant selected from the group consisting of H.sub.2 0.sub.2, HOCl, KOCl, KMnO.sub.4 and CH.sub.3 COOH or mixtures thereof to form a copper oxide passivating-type layer at the copper surface.

Abstract: Poly(arylene sulfide/sulfone) polymers are treated in order to increase melt stability and decrease impurities by contacting the poly(arylene sulfide/sulfone) polymer with a soluble zinc compound and an acidic solution. In one embodiment, the polymer is treated first with the soluble zinc compound, followed by treatment with the acidic solution. In another embodiment, the polymer is treated in one step with a solution comprising a water soluble zinc compound in an acidic solution.

Abstract: A composition and method for forming the composition of poly(arylene sulfide) having improved impact strength and crack resistance. The invention involves mixing poly(arylene sulfide) with a polymeric rubber, a metal hydroxide, and a carboxylic anhydride, each in sufficient amounts and in proportions needed to improve impact strength and crack resistance.

Abstract: A combined toy bat and windmill which has a toy windmill which is rotatably mounted in a transparent hollow bat through which a number of holes are formed, so that the toy windmill is rotated by means of air which flows through the holes when the hollow bat is swung.

Abstract: The present invention is a surface modification process which provides a means of rapidly heating a thin layer of a polymer surface or a thin coating of material on a coated substrate and various surfaces produced by such a process.

Abstract: The present invention includes a polishing pad to improve polishing uniformity across a substrate and a method using the polishing pad. The polishing pad has a first region that lies closer to the edge of the polishing pad and a second region that lies further from the edge of the polishing pad. The second region has a plurality of openings or a larger average pore size compared to the first region. Each opening or the average pore size of the second region may be 1) between about 250-1000 microns or 2) in a range of about 25-1000 percent larger than the average pore size of the first region. The polishing pad may be used in a chemical-mechanical polishing without having to substantially changing the polisher or the operational parameters of the polisher other than the oscillating range.

Abstract: A process for preparing arylene sulfide polymers is provided, comprising contacting an initiator compound, a halothiophenol compound, an polar organic compound, and a base. Blends comprising the inventive polymers and polyamides or polyaramides provide improved mechanical properties.

Abstract: Poly(biphenylene sulfide/poly(phenylene sulfide) copolymers are produced by contacting a p-dihalobenzene and a bis-p-halobiphenyl under polymerization condiditons. Additionally a poly(biphenylene sulfide)/poly(phenylene sulfide) copolymer/fiber reinforced composite is provided.

Abstract: Polyurethane foams blown with a mixture of water, HCFC-22 or HCFC-141b, and a perfluorinated hydrocarbon having from 3 to 8 carbon atoms yields polyurethane and polyisocyanurate foams having exceptional physical properties, i.e., small and uniform cells, low initial K-factor, low aged K-factor, and high tensile strength. The low initial and aged K-factors are most unexpected when it is considered that significant amounts of water are used to blow the foam.

Abstract: A semiconductor wafer has a surface layer to be planarized in a chemical mechanical polishing (CMP) process. An area of the layer that is higher than another area is altered so that the removal rate is higher. For example, if the surface layer is TEOS oxide, the higher layer may be bombarded with boron and phosphorus to produce BPSG, which has a polishing rate 2-3 times that of the TEOS. Upon CMP planarization, the higher area erodes faster resulting in improved planarization. Alternatively, the lower area may be doped with nitrogen to produce a nitride which is more resistant to CMP, with the same result. Likewise areas, such as tungsten troughs, which tend to be dished by CMP, may be changed to WNx which is more resistant to the tungsten CMP than the adjacent tungsten, eliminating the dishing upon planarization.

Abstract: An IC chemical mechanical planarization (cmp) process incorporating slurry temperature control. Specifically, there is a VCMP process which requires small holders 18. The VCMP process incorporates small quantities of chemicals in the holder, and utilizes a system of closely regulating the heating and cooling of the chemical component of the VCMP process to increase and decrease the chemical reaction, and therefore the speed of the chemical removal of tungsten material.

Abstract: A surface modification process which provides a means of rapidly heating a thin layer of a polymer surface or a thin coating of material on a coated substrate and various surfaces produced by such a process.

Abstract: Low temperature heat curable arylene sulfide copolymer compositions which are particularly suitable for use in coating applications are provided. The compositions basically comprise a first arylene sulfide copolymer having unsubstituted para- and ortho-aromatic sulfide repeating units in the polymer chain, and a second arylene sulfide copolymer having unsubstituted para-aromatic sulfide repeating units and alkyl-substituted aromatic sulfide repeating units in the polymer chain.

Abstract: A process for depositing a thin film of aluminum nitride (AlN) includes sputtering an aluminum target with energetic nitrogen ions generated in a nitrogen plasma. A single gas (i.e. nitrogen) is used as both the reactive gas and as the sputtering gas. The process is especially adapted for forming an etchstop layer for use in forming contact vias through a dielectric layer in semiconductor manufacture. The process is also useful in semiconductor manufacture for forming an aluminum nitride (AlN) film that may be used as a passivation layer, as a ceramic packaging material, as a mask for ion implantation, as a substrate material in hybrid circuits, and as a high bandgap window for GaAs solar cells.

Abstract: An arylene sulfide copolymer and a process for preparing same by contacting a mixture of two structurally different dihaloromatic compounds, at least one organic amide, at least one sulfur-containing compound, and water, and continuous long fiber reinforced plastics containing arylene sulfide copolymer as the polymer matrix or containing arylene sulfide copolymer in a thermoplastic resin matrix.

Abstract: A non-vulcanized thermoplastic composition comprising a polyamide and an elastomeric halogen-containing copolymer of a C.sub.4 to C.sub.7 isomonoolefin and a para-alkylstyrene is prepared by blending the polyamide and elastomeric copolymer in the presence of specified metal compounds in an amount insufficient for vulcanizing the composition. Optionally, the resulting composition may be subjected to vulcanization.

Abstract: A method for forming conductive plugs within an insulation material is described. The inventive process results in a plug of a material such as tungsten which is more even with the insulation layer surface than conventional plug formation techniques. Conventional processes result in recessed plugs which are not easily or reliably coupled with subsequent layers of sputtered aluminum or other conductors. The inventive process uses a two-step chemical mechanical planarization technique. An insulation layer with contact holes is formed, and a metal layer is formed thereover. A polishing pad rotates against the wafer surface while a slurry selective to the metal removes the metal overlying the wafer surface, and also recesses the metal within the contact holes due to the chemical nature and fibrous element of the polishing pad. A second CMP step uses a slurry having an acid or base selective to the insulation material to remove the insulator from around the metal.