Abstract: Semiconductor device and the manufacturing method thereof are disclosed herein. An exemplary semiconductor device comprises a first semiconductor fin and a second semiconductor fin formed over a substrate, wherein lower portions of the first semiconductor fin and the second semiconductor fin are separated by an isolation structure; a first gate stack formed over the first semiconductor fin and a second gate stack formed over the second semiconductor fin; and a separation feature separating the first gate stack and the second gate stack, wherein the separation feature includes a first dielectric layer and a second dielectric layer with an air gap defined therebetween, and a bottom portion of the separation feature being inserted into the isolation structure.

Abstract: The present disclosure provides semiconductor devices and methods of forming the same. A semiconductor device of the present disclosure includes a first source/drain feature and a second source/drain feature over a substrate, a plurality of channel members extending between the first source/drain feature and the second source/drain feature, a gate structure wrapping around each of the plurality of channel members, and at least one blocking feature. At least one of the plurality of channel members is isolated from the first source/drain feature and the second source/drain feature by the at least one blocking feature.

Abstract: Field effect transistor and manufacturing method thereof are disclosed. The field effect transistor includes a substrate, fins, a gate structure, a first spacer and a second spacer. The fins protrude from the substrate and extend in a first direction. The gate structure is disposed across and over the fins and extends in a second direction perpendicular to the first direction. The first spacer is disposed on sidewalls of the gate structure. The second spacer is disposed on the first spacer and surrounds the gate structure. The first spacer is fluorine-doped and includes fluorine dopants.

Abstract: The present disclosure provides semiconductor devices and methods of forming the same. A semiconductor device of the present disclosure includes a first source/drain feature and a second source/drain feature over a substrate, a plurality of channel members extending between the first source/drain feature and the second source/drain feature, a gate structure wrapping around each of the plurality of channel members, and at least one blocking feature. At least one of the plurality of channel members is isolated from the first source/drain feature and the second source/drain feature by the at least one blocking feature.

Abstract: A method including providing a device including a gate structure and a source/drain feature adjacent to the gate structure. An insulating layer (e.g., CESL, ILD) is formed over the source/drain feature. A trench is etched in the insulating layer to expose a surface of the source/drain feature. A semiconductor material is then formed in the etched trench on the surface of the source/drain feature. The semiconductor material is converted to a silicide.

Abstract: A method of forming a semiconductor device includes patterning a mask layer and a semiconductor material to form a first fin and a second fin with a trench interposing the first fin and the second fin. A first liner layer is formed over the first fin, the second fin, and the trench. An insulation material is formed over the first liner layer. A first anneal is performed, followed by a first planarization of the insulation material to form a first planarized insulation material. After which, a top surface of the first planarized insulation material is over a top surface of the mask layer. A second anneal is performed, followed by a second planarization of the first planarized insulation material to form a second planarized insulation material. The insulation material is etched to form shallow trench isolation (STI) regions, and a gate structure is formed over the semiconductor material.

Abstract: A semiconductor device with different gate structure configurations and a method of fabricating the semiconductor device are disclosed. The method includes depositing a high-K dielectric layer surrounding nanostructured channel regions, performing a first doping with a rare-earth metal (REM)-based dopant on first and second portions of the high-K dielectric layer, and performing a second doping with the REM-based dopants on the first portions of the high-K dielectric layer and third portions of the high-K dielectric layer. The first doping dopes the first and second portions of the high-K dielectric layer with a first REM-based dopant concentration. The second doping dopes the first and third portions of the high-K dielectric layer with a second REM-based dopant concentration different from the first REM-based dopant concentration.

Abstract: A method includes providing a structure having two fins extending from a substrate and an isolation structure adjacent to lower portions of the fins; forming a cladding layer over the isolation structure and over top and sidewalls of the fins; recessing the isolation structure using the cladding layer as an etch mask to expose the substrate; after the recessing of the isolation structure, depositing a seal layer over the substrate, the isolation structure, and the cladding layer; forming a sacrificial plug over the seal layer and between the two fins; and depositing a dielectric top cover over the sacrificial plug and laterally between the two fins.

Abstract: A semiconductor device includes a substrate, a gate stack over the substrate and a gate spacer on a sidewall of the gate stack. The gate spacer includes an outer spacer and an inner spacer between the gate stack and the outer spacer. The outer spacer and the inner spacer have same k-value reduction impurities, and a concentration of the k-value reduction impurities in the inner spacer is greater than a concentration of the k-value reduction impurities in the outer spacer.

Abstract: A semiconductor device includes an N-type fin-like field effect, a P-type fin-like field effect transistor, a shallow trench isolation (STI) structure, a first interlayer dielectric (ILD) layer, and a second ILD layer. The N-type fin-like field effect transistor includes a first semiconductor fin, a gate structure across the first semiconductor fin, and a first source/drain feature in contact with the first semiconductor fin. The P-type fin-like field effect transistor includes a second semiconductor fin, the gate structure across the second semiconductor fin, and a second source/drain feature in contact with the second semiconductor fin. The structure surrounds the first and second semiconductor fins. The first interlayer dielectric (ILD) layer covers the first source/drain feature. The second ILD layer covers the second source/drain feature, wherein a porosity of the second ILD layer is greater than a porosity of the first ILD layer.

Abstract: Integrated circuit devices and methods of forming the same are provided. An integrated circuit device in an embodiment includes a first multi-gate active region over a substrate, a second multi-gate active region over the substrate, a first gate structure over the first multi-gate active region, a second gate structure over the second multi-gate active region, and a dielectric feature disposed between the first gate structure and the second gate structure. The dielectric feature includes an oxygen-free layer in contact with the first gate structure and the second gate structure, a silicon oxide layer over the oxygen-free layer, and a transition layer disposed between the oxygen-free layer and the silicon oxide layer. An oxygen content of the transition layer is smaller than an oxygen content of the silicon oxide layer.

Abstract: A method of forming a semiconductor device includes patterning a mask layer and a semiconductor material to form a first fin and a second fin with a trench interposing the first fin and the second fin. A first liner layer is formed over the first fin, the second fin, and the trench. An insulation material is formed over the first liner layer. A first anneal is performed, followed by a first planarization of the insulation material to form a first planarized insulation material. After which, a top surface of the first planarized insulation material is over a top surface of the mask layer. A second anneal is performed, followed by a second planarization of the first planarized insulation material to form a second planarized insulation material. The insulation material is etched to form shallow trench isolation (STI) regions, and a gate structure is formed over the semiconductor material.

Abstract: A method of forming a semiconductor device includes patterning a mask layer and a semiconductor material to form a first fin and a second fin with a trench interposing the first fin and the second fin. A first liner layer is formed over the first fin, the second fin, and the trench. An insulation material is formed over the first liner layer. A first anneal is performed, followed by a first planarization of the insulation material to form a first planarized insulation material. After which, a top surface of the first planarized insulation material is over a top surface of the mask layer. A second anneal is performed, followed by a second planarization of the first planarized insulation material to form a second planarized insulation material. The insulation material is etched to form shallow trench isolation (STI) regions, and a gate structure is formed over the semiconductor material.

Abstract: The present disclosure provides one embodiment of a semiconductor structure. The structure includes a semiconductor substrate; a fin extending above the semiconductor substrate, wherein the fin includes a first layer over the semiconductor substrate and a second layer over the first layer, wherein the first layer includes silicon germanium having a first concentration of germanium, and wherein the second layer includes silicon germanium having a second concentration of germanium less than the first concentration of germanium; and a gate stack disposed over the fin.

Abstract: Aspects of the disclosure provide a method for fabricating a semiconductor device. A pre-stress liner is formed over a structure. The structure includes a gate structure having sidewalls. A protection layer is formed. The protection layer covers a first portion of the pre-stress liner that extends along the sidewalls of the gate structure, and exposes a second portion of the pre-stress liner that is away from the sidewalls of the gate structure. An oxygen-containing layer is formed. The oxygen-containing layer covers the pre-stress liner and the protection layer. The oxygen-containing layer is separated from the first portion of the pre-stress liner by the protection layer. The structure is annealed such that the second portion of the pre-stress liner oxidizes by receiving oxygen from the oxygen-containing layer, while the first portion of the pre-stress liner remains unoxidized due to the protection layer.

Abstract: A semiconductor structure includes a semiconductor substrate, an oxide layer disposed over the semiconductor substrate, a high-k metal gate structure (HKMG) interleaved with the stack of semiconductor layers, and an epitaxial source/drain (S/D) feature disposed adjacent to the HKMG, wherein a bottom portion of the epitaxial S/D feature is defined by the oxide layer.

Abstract: A semiconductor device with different gate structure configurations and a method of fabricating the semiconductor device are disclosed. The method includes depositing a high-K dielectric layer surrounding nanostructured channel regions, performing a first doping with a rare-earth metal (REM)-based dopant on first and second portions of the high-K dielectric layer, and performing a second doping with the REM-based dopants on the first portions of the high-K dielectric layer and third portions of the high-K dielectric layer. The first doping dopes the first and second portions of the high-K dielectric layer with a first REM-based dopant concentration. The second doping dopes the first and third portions of the high-K dielectric layer with a second REM-based dopant concentration different from the first REM-based dopant concentration. The method further includes depositing a work function metal layer on the high-K dielectric layer and depositing a metal fill layer on the work function metal layer.

Abstract: A method for manufacturing a semiconductor device, includes: forming a shallow trench isolation structure surrounding a first semiconductor fin and a second semiconductor fin; forming a dummy gate structure across the first and second semiconductor fins; forming a first flowable dielectric layer over the first and second semiconductor fins; curing the first flowable dielectric layer at a first temperature; removing a first portion of the cured first flowable dielectric layer from above the second semiconductor fin; after removing the first portion of the cured first flowable dielectric layer, forming a second flowable dielectric layer over the second semiconductor fin; curing the second flowable dielectric layer at a second temperature different from the first temperature; and replacing the dummy gate structure with a metal gate structure.

Abstract: A method includes forming a dummy gate structure over a substrate, forming a plurality of gate spacers respectively on opposite sidewalls of the dummy gate structure and having a first dielectric constant, removing the dummy gate structure to form a gate trench between the gate spacers, forming a dopant source layer to line the gate trench, annealing the dopant source layer to diffuse k-value reduction impurities from the dopant source layer into the gate spacers to lower the first dielectric constant of the gate spacers to a second dielectric constant, and forming a replacement gate stack in the gate trench.

Abstract: Field effect transistor and manufacturing method thereof are disclosed. The field effect transistor includes a substrate, fins, a gate structure, a first spacer and a second spacer. The fins protrude from the substrate and extend in a first direction. The gate structure is disposed across and over the fins and extends in a second direction perpendicular to the first direction. The first spacer is disposed on sidewalls of the gate structure. The second spacer is disposed on the first spacer and surrounds the gate structure. The first spacer is fluorine-doped and includes fluorine dopants.