Abstract: The invention is in the field of biogas production. In particular the invention is directed to a process and apparatus for the conversion of carbon and hydrogen containing materials into biogas (viz. a gas stream comprising CH4) containing material and subsequent purification of the resulting gas. According to the invention biogas is produced from carbon and hydrogen containing starting material. The unpurified biogas is subsequently purified by subjecting it to a filtration step, which comprises feeding said biogas to at least one cyclone providing cyclone action, at least one water filter where said biogas is washed with water and at least one dry filter where said biogas is dry-filtered, thus producing a purified biogas, followed by subjecting said purified biogas to compression, preferably using a water ring compressor, followed by feeding the compressed gas to a water-gas separator.

Abstract: Compounds active on Ret are described, as well as methods of using such compounds. Also described are crystal structures of Ret surrogates that were determined using X-ray crystallography. The use of such Ret surrogate crystals and structural information can, for example, be used for identifying molecular scaffolds and for developing ligands that bind to and modulate Ret and for identifying improved ligands based on known ligands.

Abstract: Compounds are described that are active on at least one of PPAR?, PPAR?, and PPAR?, which are useful for therapeutic and/or prophylactic methods involving modulation of at least one of PPAR?, PPAR?, and PPAR?, wherein the compounds have the formula: wherein: X2 and X3 are independently CH or N; and one of X1 and X4 is N or CR4 and the other of X1 and X4 is N or CH.

Abstract: The present invention provides a method of inducing stress in a semiconductor device substrate by applying an ion implantation to a gate region before a source/drain annealing process. The source/drain region may then be annealed along with the gate which will cause the gate to expand in certain areas due to said ion implantation. As a result, stress caused by said expansion of the gate is transferred to the channel region in the semiconductor substrate.

Abstract: Compounds and salts thereof, formulations thereof, conjugates thereof, derivatives thereof, forms thereof and uses thereof are described. In certain aspects and embodiments, the described compounds or salts thereof, formulations thereof, conjugates thereof, derivatives thereof, forms thereof are active on one or more of Fms, Kit, Flt3, TrkA, TrkB and TrkC kinase protein.

Abstract: Inhibition of protein kinases having one or more cysteine residues within the ATP binding site is effected by contacting the kinase, per se or in a cell or subject, with an inhibitory-effective amount of a compound having a heterocyclic core structure comprised of two or more fused rings containing at least one nitrogen ring atom, and an electrophilic substituent that is capable of reacting with a cysteine residue within the ATP binding site of a kinase. Preferred compounds include certain pyrrolopyrimidines and oxindoles having such an electrophilic substituent and optionally an aromatic or heteroaromatic substituent that is capable of interacting with a threonine or smaller residue located in the gatekeeper position of the kinase. Kinases lacking such cysteine residues may be engineered or modified so that they are capable of being inhibited by such compounds by replacing a valine or other amino acid residue within the ATP binding site by a cysteine residue.

Abstract: Compounds active on the receptor protein tyrosine kinases c-kit and/or c-fms are provided herewith. Also provided herewith are compositions useful for treatment of c-kit mediated diseases or conditions and/or c-fms-mediated diseases or conditions, and methods for the use thereof.

Abstract: The present invention provides a method of inducing stress in a semiconductor device substrate by applying an ion implantation to a gate region before a source/drain annealing process. The source/drain region may then be annealed along with the gate which will cause the gate to expand in certain areas due to said ion implantation. As a result, stress caused by said expansion of the gate is transferred to the channel region in the semiconductor substrate.

Abstract: Compounds and salts thereof, formulations thereof, conjugates thereof, derivatives thereof, forms thereof and uses thereof are described. In certain aspects and embodiments, the described compounds or salts thereof, formulations thereof, conjugates thereof, derivatives thereof, forms thereof are active on each of B-Raf, B-Raf V600E and c-Raf-1 protein kinase. In certain aspects and embodiments, the described compounds are active in inhibiting proliferation of a Ras mutant cell line.

Abstract: Compounds active on the receptor protein tyrosine kinases c-kit and c-fms are provided herewith. Also provided herewith are compositions useful for treatment of c-kit mediated diseases or condition and c-fms-mediated diseases or condition, and methods for the use thereof.

Abstract: Compounds and salts thereof, formulations thereof, conjugates thereof, derivatives thereof, forms thereof and uses thereof are described. In certain aspects and embodiments, the described compounds or salts thereof, formulations thereof, conjugates thereof, derivatives thereof, forms thereof are active on at least one Raf protein kinase. In certain aspects and embodiments, the described compounds are active in inhibiting proliferation of a Ras mutant cell line. Also described are methods of use thereof to treat diseases and conditions, including diseases and conditions associated with activity of B-Raf V600E mutant protein kinase, including melanoma, glioma, glioblastoma multiforme, pilocytic astrocytoma, colorectal cancer, thyroid cancer, lung cancer, ovarian cancer, prostate cancer, liver cancer, gallbladder cancer, gastrointestinal stromal tumors, biliary tract cancer, and cholangiocarcinoma.

Abstract: The present invention provides anti-inflammatory compounds useful in the treatment of diseases and conditions in which inflammation is involved in disease progression or the manifestation of symptoms of the disease or condition.

Abstract: The present invention relates to the reduction or complete prevention of Cu corrosion during a planarization or polishing process. In one aspect of the invention, RF signal is used to establish a negative bias in front of the wafer surface following polishing to eliminate Cu+ or Cu2+ migrations. In another aspect of the invention, a DC Voltage power supply is used to establish the negative bias.

Abstract: Compounds with 7-azaindole core structure with activity toward the receptor protein tyrosine kinase c-kit, compositions useful for treatment c-kit-mediate diseases or conditions, and methods of use thereof, are provided. Further provided are methods of c-kit ligand identification and design.

Abstract: A method for producing a wide steel strip using thin slab continuous casting and rolling by the following steps a) casting a molten steel into a thin slab having a thickness of between 50 and 90 mm; b) cutting; c) soaking; d) heating by electromagnetic induction; e) descaling; f) rolling; g) cooling with laminar flow; and h) coiling. The method can effectively control the solution and precipitation of carbon, nitrogen, and sulfide in steel with a low cost. The process is easy and flexible, and steel can be produced in a wide range of categories. Further provided is a system for producing a wide steel strip with thin slab continuous casting and rolling.

Abstract: A scene-based non-uniformity correction method super-resolution for eliminating fixed pattern noise in a video having a plurality of input images is disclosed, comprising the steps of warping each of the plurality of images with respect to a reference image to obtain a warped set of images; performing one of averaging and deblurring on the warped set of images to obtain an initial estimate of a reference true scene frame; warping the initial estimate of the reference true scene frame with respect to each of the plurality of images to obtain a set of estimated true signal images; performing a least square fit algorithm to estimate a gain image and an offset image given the set of estimated true signal images; applying the estimated gain image and estimated offset image to the plurality of images to obtain a clean set of images; and applying a super-resolution algorithm to the clean set of images to obtain a higher resolution version of the reference true scene frame.

Abstract: A Layer 2 network switch is partitionable into a plurality of switch fabrics. The single-chassis switch is partitionable into a plurality of logical switches, each associated with one of the virtual fabrics. The logical switches behave as complete and self-contained switches. A logical switch fabric can span multiple single-chassis switch chassis. Logical switches are connected by inter-switch links that can be either dedicated single-chassis links or logical links. An extended inter-switch link can be used to transport traffic for one or more logical inter-switch links. Physical ports of the chassis are assigned to logical switches and are managed by the logical switch. Legacy switches that are not partitionable into logical switches can serve as transit switches between two logical switches.

Abstract: Compounds active on protein kinases are described, as well as methods of using such compounds to treat diseases and conditions associated with aberrant activity of protein kinases.

Abstract: A vapor chamber includes a container, a wick structure attached to an inner surface of the container, and a supporting structure received in the container and abutting against opposite sidewalls of the container. The supporting structure is generally in the form of a metallic sheet and comprises a plurality of supporting members extending upwardly from thereof. A through hole is defined in the supporting member from top to bottom. An opening is defined between the adjoining supporting members. Opposite ends of the supporting members abut against the wick structure located at the opposite sidewalls of the container.

Abstract: Compounds active on the receptor protein tyrosine kinases c-kit and/or c-fms are provided herewith. Also provided herewith are compositions useful for treatment of c-kit mediated diseases or conditions and/or c-fms-mediated diseases or conditions, and methods for the use thereof.