Abstract: A vapor chamber includes a sealed flattened casing containing working liquid therein, a wick structure arranged on an inner face of the casing, a plurality of supporting posts received in the casing and at least a metallic wire connecting the supporting posts. Each supporting post defines at least a channel therein. The at least a metallic wire engagingly extends through the channels of the supporting posts. Top and bottom ends of the supporting posts engage the wick structure to reinforce a structure of the vapor chamber.

Abstract: Compounds active on protein kinases are described, as well as methods of using such compounds to treat diseases and conditions associated with aberrant activity of protein kinases.

Abstract: Compounds active on protein kinases are described, as well as methods of using such compounds to treat diseases and conditions associated with aberrant activity of protein kinases.

Abstract: Compounds active on Ret are described, as well as methods of using such compounds. Also described are crystal structures of Ret surrogates that were determined using X-ray crystallography. The use of such Ret surrogate crystals and structural information can, for example, be used for identifying molecular scaffolds and for developing ligands that bind to and modulate Ret and for identifying improved ligands based on known ligands.

Abstract: A method of manufacture of an integrated circuit system includes: fabricating a substrate having an integrated circuit; applying a low-K dielectric layer over the integrated circuit; forming a via and a trench, in the low-K dielectric layer, over the integrated circuit; forming a structure surface by a chemical-mechanical planarization (CMP) process; and applying a direct implant to the structure surface for forming an implant layer and a metal passivation layer including repairing damage, to the low-K dielectric layer, caused by the CMP process.

Abstract: A method for forming a semiconductor device is presented. The method includes providing a substrate prepared with a dielectric layer formed thereon. The dielectric layer having a conductive line disposed in an upper portion of the dielectric layer. The substrate is processed to produce a top surface of the dielectric layer that is not coplanar with a top surface of the conductive line to form a stepped topography.

Abstract: Compounds active on the receptor protein tyrosine kinases c-kit and c-fms are provided herewith. Also provided herewith are compositions useful for treatment of c-kit mediated diseases or condition and c-fms-mediated diseases or condition, and methods for the use thereof.

Abstract: A vapor chamber includes a sealed flattened casing containing working liquid therein, a wick structure arranged on an inner face of the casing, a supporting plate received in the casing and a plurality of supporting posts. The supporting plate defines a plurality of fixing holes therein. The supporting posts are engagingly received in the fixing holes of the supporting plate. Top and bottom ends of the supporting posts engage with the wick structure to reinforce a structure of the vapor chamber.

Abstract: A storage switch is disclosed that facilitates mirroring of data. For example, a target is mirrored when an identical (or almost identical) copy of the data is stored in two or more separate physical data stores. Because the various data stores may not be homogenous, they may provide for different burst sizes. To accommodate the different burst sizes, the switch provides different sequence counts for data packets sent to the different data stores that store the mirrored data.

Abstract: Compounds active on protein kinases are described, as well as methods of using such compounds to treat diseases and conditions associated with aberrant activity of protein kinases.

Abstract: Inhibition of protein kinases having one or more cysteine residues within the ATP binding site is effected by contacting the kinase, per se or in a cell or subject, with an inhibitory-effective amount of a compound having a heterocyclic core structure comprised of two or more fused rings containing at least one nitrogen ring atom, and an electrophilic substituent that is capable of reacting with a cysteine residue within the ATP binding site of a kinase. Preferred compounds include certain pyrrolopyrimidines and oxindoles having such an electrophilic substituent and optionally an aromatic or heteroaromatic substituent that is capable of interacting with a threonine or smaller residue located in the gatekeeper position of the kinase. Kinases lacking such cysteine residues may be engineered or modified so that they are capable of being inhibited by such compounds by replacing a valine or other amino acid residue within the ATP binding site by a cysteine residue.

Abstract: Compounds active on protein kinases are described, as well as methods of using such compounds to treat diseases and conditions associated with aberrant activity of protein kinases.

Abstract: A method for forming a semiconductor device is presented. The method includes providing a substrate prepared with a dielectric layer formed thereon. The dielectric layer having a conductive line disposed in an upper portion of the dielectric layer. The substrate is processed to produce a top surface of the dielectric layer that is not coplanar with a top surface of the conductive line to form a stepped topography.

Abstract: The embodiments of the present invention disclose an apparatus for transmitting multi-ary error-correcting codes, an apparatus for receiving multi-ary error-correcting codes, a data transmission system, and relevant methods to simplify operations. The apparatus for transmitting multi-ary error-correcting codes includes: a multi-ary channel encoder, adapted to perform multi-ary coding for source data frames of a user to obtain encoded sequences; a symbol mapper, adapted to perform symbol mapping for the encoded sequences to obtain symbol sequences; and a spreading and interleaving unit, adapted to spread and interleave the symbol sequences. Moreover, a corresponding apparatus for receiving multi-ary error-correcting codes, a data transmission system, and relevant methods are provided.

Abstract: A method for producing a wide steel strip using thin slab continuous casting and rolling by the following steps a) casting a molten steel into a thin slab having a thickness of between 50 and 90 mm; b) cutting; c) soaking; d) heating by electromagnetic induction; e) descaling; f) rolling; g) cooling with laminar flow; and h) coiling. The method can effectively control the solution and precipitation of carbon, nitrogen, and sulfide in steel with a low cost. The process is easy and flexible, and steel can be produced in a wide range of categories. Further provided is a system for producing a wide steel strip with thin slab continuous casting and rolling.

Abstract: A scene-based non-uniformity correction method employing local constant statistics for eliminating fixed pattern noise in a video comprising a plurality of images is disclosed, comprising the steps of providing an initial gain image, an initial offset image, a predetermined pyramid level, and a filter of a predetermined level; setting one of the plurality of input images to the current image; calculating a temporary true scene image for the current image based on the initial gain image and the initial offset image; accumulating a temporal mean image and a temporal standard deviation image based on the calculated temporary true scene image; setting another of the plurality of images to the current image and repeating the setting, calculating, and accumulating steps until substantially all of the images of the plurality of images have been processed, otherwise further perform the steps of calculating a Gaussian mean image based on the accumulated temporal mean and calculating a Gaussian gain image based on the

Abstract: An integration approach to improve electromigration resistance in a semiconductor device is described. A via hole is formed in a stack that includes an upper dielectric layer, a middle TiN ARC, and a lower first metal layer and is filled with a conformal diffusion barrier layer and a second metal layer. A key feature is that the etch process can be selected to vary the shape and location of the via bottom. A round or partially rounded bottom is formed in the first metal layer to reduce mechanical stress near the diffusion barrier layer. On the other hand, a flat bottom which stops on or in the TiN ARC is selected when exposure of the first metal layer to subsequent processing steps is a primary concern. Electromigration resistance is found to be lower than for a via structure with a flat bottom formed in a first metal layer.

Abstract: Compounds are described that are active on PPARs, including pan-active compounds. Also described are methods for developing or identifying compounds having a desired selectivity profile.

Abstract: A switch including a processor and method for monitoring bandwidth in the storage switch. The switch includes at least one physical port coupling at least one target and at least one initiator via the physical port. The monitoring method may include the steps of determining whether congestion occurs on the physical port and assigning a weight to bandwidth usage between the initiator and the target based on a minimum and maximum bandwidth settings for each target. The switch may further include a step of controlling bandwidth usage by each of said at least two targets based on minimum and maximum bandwidth settings for each of the targets.

Abstract: Compounds of formula I active on protein kinases are described, as well as methods of using such compounds to treat diseases and conditions associated with aberrant activity of protein kinases. Formula (I) wherein Ar is optionally substituted heteroaryl; R2 is hydrogen, lower alkyl or halogen; U is selected from the group consisting of —S(O)2—, —C(X)—, —C(X)—N(R10)—, and —S(O)2—N(R10)—; R3 is optionally substituted lower alkyl, optionally substituted C3.6 cycloalkyl, optionally substituted heterocycloalkyl, optionally substituted aryl or optionally substituted heteroaryl; and wherein R1, R3, R4, m, L1, X R10 are as described herein.