Abstract: A fingerprint detection method for a pharmaceutical preparation. The detection method uses an HPLC-DAD wavelength switching method to simultaneously determine a plurality of active ingredients such as mulberroside A, hydroxysafflor yellow pigment A, paeoniflorin, ferulic acid, calycosin-7-O-?-D-glucoside, rosmarinic acid, salvianolic acid B, formononetin, etc. in the pharmaceutical preparation. The sensitivity and accuracy of the detection method are greatly enhanced so as to ensure the comprehensive evaluation of the quality of the pharmaceutical preparation.

Abstract: ?1-2-fucosyltransferases, and methods and compositions for making and using ?1-2-fucosyltransferases, are described herein.

Abstract: Embodiments of the present disclosure describe a white light illumination system using InGaN-based orange nanowires (NWs) LED, in conjunction with a blue LD for high speed optical wireless communications. By changing the relative intensities of an ultrabroad linewidth orange LED and narrow-linewidth blue LD components, a hybrid LED/LD device achieves correlated color temperature (CCT) ranging from 3000 K to above 6000 K with color rendering index (CRI) values reaching 83.1. Orange-emitting NWs LED are utilized as an active-phosphor, while a blue LD was used for both color mixing and optical wireless communications.

Abstract: A vehicle control device, a vehicle control system and a vehicle are provided in the embodiments of the present disclosure, the vehicle control device includes a first resistor circuit, a comparator, a control switch, and a second resistor circuit; the comparator is configured to receive a first voltage from the air bag module and output a high level signal to the control switch to enable the control switch to be switched on according to the high level signal, enable a battery management system to be grounded after the control switch is switched on, and enable the battery management system to be powered off after the battery management system is grounded, where the first voltage is sent out by the air bag module when a vehicle collision event is detected.

Abstract: A tri-block copolymer includes a first end block consisting of a hydrophobic, nano-fiber forming polymer, wherein the first end block is present in the tri-block copolymer at a weight percentage ranging from about 10% to about 89%; a middle block attached to the first end block, the middle block consisting of a hydrophilic polymer, wherein the middle block is present in the tri-block copolymer at a weight percentage ranging from about 1% to about 89%; and a second end block attached to the middle block, the second end block consisting of a temperature-responsive polymer, wherein the second end block is present in the tri-block copolymer at a weight percentage ranging from about 1% to about 89%.

Abstract: Provided are a new class of hydrazone amide derivatives and the use thereof in the preparation of anti-osteoporosis drugs, wherein the structural formula of the hydrazone amide derivative is as shown in formula (I), and same are a new class of compounds with an anti-osteoporosis effect.

Abstract: The present disclosure provides a brand-new hydrazone amide derivative and an application thereof in preparation of medicaments for preventing and treating alopecia. The structural formula of the hydrazone amide derivative is shown in formula (I), and the hydrazone amide derivative is a brand-new compound for stimulating hair follicle growth and preventing and treating alopecia.

Abstract: Systems and methods for configuring a security sensor are provided. Some methods can include receiving user input identifying a configuration setting of the security sensor through a user input device located on the security sensor, identifying the configuration setting based on the user input, transmitting a registration message to a security system control panel identifying the configuration setting, and operating in accordance with the configuration setting.

Abstract: Gallium nitride based semiconductors are provided having one or more passivated surfaces. The surfaces can have a plurality of thiol compounds attached thereto for enhancement of optoelectronic properties and/or solar water splitting properties. The surfaces can also include wherein the surface has been treated with chemical solution for native oxide removal and/or wherein the surface has attached thereto a plurality of nitrides, oxides, insulating compounds, thiol compounds, or a combination thereof to create a treated surface for enhancement of optoelectronic properties and/or solar water splitting properties. Methods of making the gallium nitride based semiconductors are also provided.

Abstract: A road condition status prediction method is performed by a server and includes obtaining historical road segment information, the historical road segment information including road condition statuses and classification events that are used to classify the road condition statuses, and the classification events being determined based on content of the classification events, and obtaining an occurrence probability of each of the classification events, based on the obtained historical road segment information. The road condition status prediction method further includes obtaining a conditional probability of each of the classification events in each of the road condition statuses, based on the obtained historical road segment information, and predicting a road condition status of a road segment, based on the obtained occurrence probability of each of the classification events and the obtained conditional probability of each of the classification events in each of the road condition statuses.

Abstract: A low-carbon and low alloy hot-work die steel with a high toughness at low temperatures and a high strength at high temperatures and a high hardenability, comprises the following components: C: 0.15-0.35%, Si: 0.40-0.90%, Mn: ?0.80%, Cr: 1.50-2.40%, Ni: 2.50-4.50%, Mo: 1.00-1.60%, V: 0.10-0.40%, W: 0.20-0.90%, P: ?0.02%, S?0.02%, and a balance of Fe matrix and other inevitable impurities. The above percentages are mass percentages. The material of the present invention can have a V notch impact energy of 30 J or more than 30 J at ?40° C., a high temperature strength of 380 MPa or more at 700° C., and a hardenability of 200 mm or more to ensure the consistency of internal and external microstructures. The materials of the present invention can be applied to hot-work molds used in special working conditions that require high toughness at low temperatures, high strength at high temperatures and high hardenability.

Abstract: The present application provides a low carbon martensitic high temperature strength steel and a preparation method thereof, wherein the chemical composition of the low carbon martensitic high temperature strength steel are: C: 0.10-0.25 wt %, Cr: 10.0-13.0 wt %, Ni: 2.0-3.2 wt %, Mo: 1.50-2.50 wt %, Si?0.60 wt %, Mn?0.60 wt %, W: 0.4-0.8 wt %, V: 0.1-0.5 wt %, Co: 0.3-0.6 wt %, Al: 0.3-1.0 wt %, Nb: 0.01-0.2 wt %, and a balance of Fe. The high temperature strength steel of the present application achieves high strength at high temperature by simultaneously precipitating both nano-coherent carbides and intermetallic compounds. It has an excellent toughness, and can be used for certain structural parts under special working conditions, such as aero-engines to increase its service life and service temperature.

Abstract: Changes to interpreted horizons in a subsurface representation are propagated to synthetic horizons in the subsurface representation by maintaining relative distances between the synthetic horizons and interpreted horizons. Distance ratios of synthetic horizons between interpreted horizons are applied to changed interpreted horizons to derive new locations of synthetic horizons.

Abstract: A Magnetic Random Access Memory (MRAM), a method of manufacturing the same, and an electronic device including the same are provided. The MRAM includes a substrate, an array of memory cells arranged in rows and columns, bit lines, and word lines. The memory cells each include a vertical switch device and a magnetic tunnel junction on the switch device and electrically connected to a first terminal of the switch device. An active region of the switch device at least partially includes a single-crystalline semiconductor material. Each of the memory cell columns is disposed on a corresponding bit line, and a second terminal of each of the respective switch devices in the memory cell column is electrically connected to the corresponding bit line. Each of the word lines is electrically connected to a control terminal of the respective switch devices of the respective memory cells in a corresponding memory cell row.

Abstract: Changes to interpreted horizons in a subsurface representation are propagated to synthetic horizons in the subsurface representation by maintaining relative distances between the synthetic horizons and interpreted horizons. Distance ratios of synthetic horizons between interpreted horizons are applied to changed interpreted horizons to derive new locations of synthetic horizons.

Abstract: The present disclosure provides a fast and high-capacity intelligent cellulose-based oil-absorbing material and a preparation method and use thereof. The material includes an intelligent response layer and an adsorption layer. The intelligent response layer is a pH-responsive nanofiber layer with an adjustable pH response performance and is obtained by grafting hyperbranched polycarboxylic acid-modified polyethyleneimine on to carboxylated cellulose nanofibers. The hyperbranched polycarboxylic acid is prepared by melting and polycondensing at a high temperature, using trimethylolpropane as a core, citric acid as a reactive monomer, and p-toluenesulfonic acid as a catalyst. The adsorption layer is prepared by coating ferroferric oxide with the carboxylated cellulose nanofibers to prepare magnetic carboxylated cellulose nanofibers, and then modifying the magnetic carboxylated cellulose nanofibers with hexadecylamine.

Abstract: The present application provides a hot-work die steel and a preparation method thereof, wherein the chemical constituents of the hot-work die steel in mass percentage are as follows: C: 0.20-0.32 wt %, Si: ?0.5 wt %, Mn: ?0.5 wt %, Cr: 1.5-2.8 wt %, Mo: 1.5-2.5 wt %, W: 0.5-1.2 wt %, Ni: 0.5-1.6 wt %, V: 0.15-0.7 wt %, Nb: 0.01-0.1 wt %, and a balance of iron, wherein an alloying degree is 5-7%; a tensile strength of the hot-work die steel at 700° C. is 560-700 MPa; a value of hardness of the hot-work die steel at room temperature is 32-38 HRC after holding at 700° C. for 3-5 h; and the hot-work die steel has an elongation of 14% to 16% at room temperature, a percentage reduction of area of 48% to 65%, and an impact toughness of 52-63 J at room temperature. The hot-work die steel of the present application has an excellent thermal stability as well as a good plasticity and a toughness at room temperature.

Abstract: The present application provides a hot-work die steel and a preparation method thereof wherein the chemical constituents of the hot-work die steel in mass percentage are as follows: C: 0.20-0.32 wt %, Si: ?0.5 wt %, Mn: ?0.5 wt %, Cr: 1.5-2.8 wt %, Mo: 1.5-2.5 wt %, W: 0.5-1.2 wt %, Ni: 0.5-1.6 wt %, V: 0.15-0.7 wt %, Nb: 0.01-0.1 wt %, and a balance of iron, wherein an alloying degree is 5-7%; a tensile strength of the hot-work die steel at 700° C. is 560-700 MPa; a value of hardness of the hot-work die steel at room temperature is 32-38 HRC after holding at 700° C. for 3-5 h; and the hot-work die steel has an elongation of 14% to 16% at room temperature, a percentage reduction of area of 48% to 65%, and an impact toughness of 52-63 J at room temperature. The hot-work die steel of the present application has an excellent thermal stability as well as a good plasticity and a toughness at room temperature.

Abstract: Methods of direct growth of high quality group III-V and group III-N based materials and semiconductor device structures in the form of nanowires, planar thin film, and nanowires-based devices on metal substrates are presented. The present compound semiconductor all-metal scheme greatly simplifies the fabrication process of high power light emitters overcoming limited thermal and electrical conductivity of nanowires grown on silicon substrates and metal thin film in prior art. In an embodiment the methods include: (i) providing a metal substrate; (ii) forming a transition metal dichalcogenide (TMDC) layer on a surface of the metal substrate; and (iii) growing a semiconductor epilayer on the transition metal dichalcogenide layer using a semiconductor epitaxy growth system. In an embodiment, the semiconductor device structures can be compound semiconductors in contact with a layer of metal dichalcogenide, wherein the layer of metal dichalcogenide is in contact with a metal substrate.

Abstract: A Magnetic Random Access Memory (MRAM), a method of manufacturing the same, and an electronic device including the same are provided. The MRAM includes a substrate, an array of memory cells arranged in rows and columns, bit lines, and word lines. The memory cells each include a vertical switch device and a magnetic tunnel junction on the switch device and electrically connected to a first terminal of the switch device. An active region of the switch device at least partially includes a single-crystalline semiconductor material. Each of the memory cell columns is disposed on a corresponding bit line, and a second terminal of each of the respective switch devices in the memory cell column is electrically connected to the corresponding bit line. Each of the word lines is electrically connected to a control terminal of the respective switch devices of the respective memory cells in a corresponding memory cell row.