Abstract: A GaN-based power electronic device and a method for manufacturing the same is provided. The GaN-based power electronic device comprising a substrate and an epitaxial layer over the substrate. The epitaxial layer comprises a GaN-based heterostructure layer, a superlattice structure layer and a P-type cap layer. The superlattice structure layer is provided over the heterostructure layer, and the P-type cap layer is provided over the superlattice structure layer. By using this electronic device, gate voltage swing and safe gate voltage range of the GaN-based power electronic device manufactured on the basis of the P-type cap layer technique may be further extended, and dynamic characteristics of the device may be improved. Therefore, application process for the GaN-based power electronic device that is based on the P-type cap layer technique will be promoted.

Abstract: A wireless communications method, user equipment, and a network node are disclosed. The method includes: receiving, by user equipment, a message sent by a first network node, where the message includes measurement instruction information and connection indication information; measuring, by the user equipment in the RRC-IDLE mode, the neighboring cells according to the measurement instruction information, and obtaining measurement results; and selecting, by the user equipment, at least one to-be-connected cell from the neighboring cells according to the connection indication information and the measurement results, and keeping camping on the cell of the first network node when the user equipment is in the RRC-IDLE mode. Embodiments of the present invention can advance a time at which a new cell is found.

Abstract: The present invention relates to a semiconductor device and a method of manufacturing the same. There is provided a semiconductor device comprising: a semiconductor substrate with a fin; a gate intersecting with the fin and a source region and a drain region within the fin at both sides of the gate; metal silicides formed at the source region and the drain region and in contact with the source region and the drain region respectively; wherein there is a impurity dopant at a interface of the metal silicide in contact with the source/drain region, which is capable of reducing a Schottky barrier height between the metal silicide and the source/drain region. The provided semiconductor device can reduce the Schottky barrier height between the metal silicide and the source/drain region, thereby reducing the specific resistance of the contact.

Abstract: A data transmission control method, apparatus and system are provided. A radio communication node receives a data packet sent by a base station, where the data packet is generated by using a Packet Data Convergence Protocol protocol data unit (PDCP PDU) of the base station. The radio communication node acquires the PDCP PDU, which is used as a Radio Link Control service data unit (RLC SDU), in the data packet. The radio communication node sends data generated by using the RLC SDU to a user equipment, where a user plane connection is established between the radio communication node and the user equipment, and a control plane connection is established between the base station and the user equipment.

Abstract: An electrical connector (100) includes: an insulative housing having a base (11) and a pair of side walls (12), each side wall having a resilient inner arm (121) and a stationary outer arm (122); and plural contacts (2) retained to the insulative housing, wherein the resilient inner arm extends along a horizontal, front-to-back direction and has a front end operable in both a vertical, top-to-bottom direction and the horizontal, front-to-back direction to move toward the stationary outer arm.

Abstract: A method for preparing a TiAl alloy thin film, wherein a reaction chamber is provided, in which at least one substrate is placed; an aluminum precursor and a titanium precursor are introduced into the reaction chamber, wherein the aluminum precursor has a molecular structure of a structural formula (I); and the aluminum precursor and the titanium precursor are brought into contact with the substrate so that a titanium-aluminum alloy thin film is formed on the surface of the substrate by vapor deposition. The method solves the problem of poor step coverage ability and the problem of incomplete filling with regard to the small-size devices by the conventional methods. Meanwhile, the formation of titanium-aluminum alloy thin films with the aid of plasma is avoided so that the substrate is not damaged by plasma.

Abstract: A data transmission control method, apparatus and system are provided. A radio communication node receives a data packet sent by a base station, where the data packet is generated by using a Packet Data Convergence Protocol protocol data unit PDCP PDU of the base station. The radio communication node acquires the PDCP PDU, which is used as a Radio Link Control service data unit RLC SDU, in the data packet. The radio communication node sends data generated by using the RLC SDU to a user equipment, where a user plane connection is established between the radio communication node and the user equipment, and a control plane connection is established between the base station and the user equipment.

Abstract: Embodiments provide a D2D communication method, a terminal, and a network device. The method includes: acquiring, by a first terminal, network information, where the network information includes a system message sent by a network device and/or a cell coverage result; determining, by the first terminal according to the network information, whether to enable D2D communication for autonomously discovering a second terminal; and if the first terminal determines to enable the D2D communication, discovering, by the first terminal, the second terminal autonomously, and performing the D2D communication with the second terminal directly.

Abstract: Embodiments of the present disclosure describe a white light illumination system using InGaN-based orange nanowires (NWs) LED, in conjunction with a blue LD for high speed optical wireless communications. By changing the relative intensities of an ultrabroad linewidth orange LED and narrow-linewidth blue LD components, a hybrid LED/LD device achieves correlated color temperature (CCT) ranging from 3000 K to above 6000K with color rendering index (CRI) values reaching 83.1.

Abstract: There is disclosed a method for manufacturing a semiconductor device comprising two opposite types of MOSFETs formed on one semiconductor substrate, the method comprising: forming a portion of the MOSFET on the semiconductor substrate, said portion of said MOSFET comprising source/drains regions located in the semiconductor substrate, a dummy gate stack located between the source/drain region and above the semiconductor substrate and a gate spacer surrounding the dummy gate stack; removing the dummy gate stack of said MOSFET to form a gate opening which exposes the surface of the semiconductor substrate; forming an interfacial oxide layer on the exposed surface of the semiconductor structure; forming a high-K gate dielectric on the interfacial oxide layer within the gate opening; forming a first metal gate layer on the high-K gate dielectric; implanting doping ions in the first metal gate layer; forming a second metal gate layer on the first metal gate layer to fill up the gate opening; and annealing to diffu

Abstract: A sensing device is disclosed. The sensing device comprises: a first electrode layer, a second electrode layer, which are separated by a dielectric layer; and through holes penetrating through the first electrode layer, the second electrode layer and the dielectric layer.

Abstract: An electrical connector (100) includes: an insulative housing having a base (11) and a pair of side walls (12), each side wall having a resilient inner arm (121) and a stationary outer arm (122); and plural contacts (2) retained to the insulative housing, wherein the resilient inner arm extends along a horizontal, front-to-back direction and has a front end operable in both a vertical, top-to-bottom direction and the horizontal, front-to-back direction to move toward the stationary outer arm.

Abstract: The present invention provides a D2D communication method, a terminal, and a network device. The method includes: acquiring, by a first terminal, network information, where the network information includes a system message sent by a network device and/or a cell coverage result; determining, by the first terminal according to the network information, whether to enable D2D communication for autonomously discovering a second terminal; and if the first terminal determines to enable the D2D communication, discovering, by the first terminal, the second terminal autonomously, and performing the D2D communication with the second terminal directly.

Abstract: The present invention provides a method for growing ni-containing thin film with single atomic layer deposition technology, comprising steps of: A) placing a substrate in a reaction chamber, and under the vacuum condition, passing a gas-phase Ni source in a form of pulses into the reaction chamber for deposition to obtain a substrate deposited with the Ni source, the Ni source comprising a compound having a structure of Formula I; B) passing a gas-phase reducing agent in a form of pulses into the reaction chamber to reduce the Ni source deposited on the substrate, obtaining a substrate deposited with a Ni thin film. The application of the Ni source having a structure of Formula I in the single atomic layer deposition technology allows a Ni-containing deposition layer with good shape retention to be deposited and formed on a nano-sized semiconductor device.

Abstract: Provided is an aluminum precursor for thin-film deposition having a structure of formula (I) or (II), wherein R1, R2, R3, R4, R5, R6, and R7 each independently represent a hydrogen atom, C1˜C6 alkyl, halo-C1˜C6 alkyl, C2˜C5 alkenyl, halo-C2˜C5 alkenyl, C3˜C10 cycloalkyl, halo-C3˜C10 cycloalkyl, C6˜C10 aryl, halo-C6˜C10 aryl or —Si(R0)3, and wherein R0 is C1˜C6 alkyl or halo-C1˜C6 alkyl. According to the present invention, based on the interaction principle between molecules, aluminum precursors for thin-film deposition are provided, which have a good thermal stability, are not susceptible to decomposition and convenient for storage and transportation, have good volatility at a high temperature, and are excellent in film formation.

Abstract: A GaN-based power electronic device and a method for manufacturing the same is provided. The GaN-based power electronic device comprising a substrate and an epitaxial layer over the substrate. The epitaxial layer comprises a GaN-based heterostructure layer, a superlattice structure layer and a P-type cap layer. The superlattice structure layer is provided over the heterostructure layer, and the P-type cap layer is provided over the superlattice structure layer. By using this electronic device, gate voltage swing and safe gate voltage range of the GaN-based power electronic device manufactured on the basis of the P-type cap layer technique may be further extended, and dynamic characteristics of the device may be improved. Therefore, application process for the GaN-based power electronic device that is based on the P-type cap layer technique will be promoted.

Abstract: A method for monolithic integration of a hyperspectral image sensor is provided, which includes: forming a bottom reflecting layer on a surface of the photosensitive region of a CMOS image sensor wafer; forming a transparent cavity layer composed of N step structures on the bottom reflecting layer through area selective atomic layer deposition processes, where N=2m, m?1 and m is a positive integer; and forming a top reflecting layer on the transparent cavity layer. With the method, non-uniformity accumulation due to etching processes in conventional technology is minimized, and the cavity layer can be made of materials which cannot be etched. Mosaic cavity layers having such repeated structures with different heights can be formed by extending one-dimensional ASALD, such as extending in another dimension and forming repeated regions, which can be applied to snapshot hyperspectral image sensors, for example, pixels, and greatly improving performance thereof.

Abstract: There is provided a method for manufacturing a semiconductor device, including: providing a semiconductor substrate having a plurality of openings formed thereon by removing a sacrificial gate; filling the openings with a top metal layer having compressive stress; and performing amorphous doping with respect to the top metal layer in a PMOS device region. Thus, it is possible to effectively improve carrier mobility of an NMOS device, and also to reduce the compressive stress in the PMOS device region to ensure a desired performance of the PMOS device.

Abstract: A method for manufacturing a two-dimensional material structure and a resultant two-dimensional material device. The method comprises steps of: forming a sacrificial FIN structure on a substrate; covering the sacrificial FIN structure with a dielectric; releasing the sacrificial FIN structure; forming a carrier FIN structure at a position for releasing the sacrificial FIN; and self-restrictedly growing two-dimensional material structure by taking the carrier FIN structure as a substrate. Utilizing the sacrificial FIN structure to implement self-restrictedly growing of the nanometer structure of the two-dimensional material results in a high precision, lower edge roughness, high yields and low process deviation as well as compatibility with the processing of CMOS large scale integrated circuits, making the method suitable for a large scale production of the two-dimensional material and related devices.

Abstract: A particle screening device is provided. The particle screening device comprises: a substrate including a first side and a second side opposite to the first side; a micropore array formed on the substrate, wherein each micropore penetrates through the substrate from the first side to the second side and has a size configured to at least permit particles smaller than target particles flow through; and electrodes formed on at least one side of the first and second sides of the substrate and around at least some micropores, wherein the electrodes are configured to generate an electric field at corresponding micropores.