Abstract: Embodiments of the present invention relate to the communications field, and disclose a method for uplink data transmission, a terminal, and a wireless communication node, which can ensure that a HARQ mechanism between a terminal and a wireless communication node works normally. The method includes: determining, by a first wireless communication node, whether a terminal is within downlink coverage of a second wireless communication node; and when the first wireless communication node determines that the terminal is not within the downlink coverage of the second wireless communication node, instructing, by the first wireless communication node, the terminal to use a non-feedback mode; and/or instructing, by the first wireless communication node, the second wireless communication node to use a non-feedback mode.

Abstract: A clock synthesizer for synthesizing an output clock locked to a selected reference clock input has a pair of phase locked loops locked to respective reference clock inputs first generating first and second frequencies. One of the frequencies is selected to control a controlled oscillator for generating an output clock. The frequency offset between the first and second frequencies at the time of switching is stored and added to the frequency controlling the controlled oscillator.

Abstract: A dual-chamber package system for absorbent articles, comprises: a retaining chamber configured to vertically retain a plurality of absorbent articles, a dispensing chamber positioned underneath the retaining chamber, wherein the dispensing chamber has a front side opening, and a divider separating the retaining chamber and the dispensing chamber, wherein at least a portion of the divider is moveable so that a bottommost absorbent article is configured to be dispensed from the front side opening of the dispensing chamber.

Abstract: ?1-2-fucosyltransferases, and methods and compositions for making and using ?1-2-fucosyltransferases, are described herein.

Abstract: A method for monolithic integration of a hyperspectral image sensor is provided, which includes: forming a bottom reflecting layer on a surface of the photosensitive region of a CMOS image sensor wafer; forming a transparent cavity layer composed of N step structures on the bottom reflecting layer through area selective atomic layer deposition processes, where N=2m, m?1 and m is a positive integer; and forming a top reflecting layer on the transparent cavity layer. With the method, non-uniformity accumulation due to etching processes in conventional technology is minimized, and the cavity layer can be made of materials which cannot be etched. Mosaic cavity layers having such repeated structures with different heights can be formed by extending one-dimensional ASALD, such as extending in another dimension and forming repeated regions, which can be applied to snapshot hyperspectral image sensors, for example, pixels, and greatly improving performance thereof.

Abstract: A method and an arrangement for reducing a contact resistance of a two-dimensional crystal material are provided. An example method may include forming a contact material layer on a two-dimensional crystal material layer; performing ion implantation; and performing thermal annealing.

Abstract: A clock synthesizer for synthesizing an output clock locked to a selected reference clock input has a pair of phase locked loops locked to respective reference clock inputs first generating first and second frequencies. One of the frequencies is selected to control a controlled oscillator for generating an output clock. The frequency offset between the first and second frequencies at the time of switching is stored and added to the frequency controlling the controlled oscillator.

Abstract: A particle screening device is provided. The particle screening device comprises: a substrate including a first side and a second side opposite to the first side; a micropore array formed on the substrate, wherein each micropore penetrates through the substrate from the first side to the second side and has a size configured to at least permit particles smaller than target particles flow through; and electrodes formed on at least one side of the first and second sides of the substrate and around at least some micropores, wherein the electrodes are configured to generate an electric field at corresponding micropores.

Abstract: A method for manufacturing a semiconductor device, comprising: forming a gate trench on a substrate; forming a gate dielectric layer and a metal gate layer thereon in the gate trench; forming a first tungsten (W) layer on a surface of the metal gate layer, and forming a tungsten nitride (WN) blocking layer by injecting nitrogen (N) ions; and filling with W through an atomic layer deposition (ALD) process. The blocking layer prevents ions in the precursors from aggregating on an interface and penetrating into the metal gate layer and the gate dielectric layer. At the same time, adhesion of W is enhanced, a process window of W during planarization is increased, reliability of the device is improved and the gate resistance is further reduced.

Abstract: The present disclosure provides a method for manufacturing a transistor having a gate with a variable work function, comprising: providing a semiconductor substrate; forming a dummy gate stack on the semiconductor substrate and performing ion implantation on an exposed area of the semiconductor substrate at both sides of the dummy gate stack to form source/drain regions; removing the dummy gate and annealing the source/drain regions; providing an atomic layer deposition reaction device; introducing a precursor source reactant into the atomic layer deposition reaction device; and controlling an environmental factor for the atomic layer deposition device to grow a work function metal layer. The present disclosure also provides a transistor having a gate with a variable work function. The present disclosure may adjust a variable work function, and may use the same material system to obtain an adjustable threshold voltage within an adjustable range.

Abstract: Elemental or compound semiconductors on metal substrates and methods of growing them are provided. The methods can include the steps of: (i) providing a metal substrate; (ii) adding an interlayer on a surface of the metal substrate, and (iii) growing semiconductor nanowires on the interlayer using a semiconductor epitaxy growth system to form the elemental or compound semiconductor. The method can include direct growth of high quality group III-V and group III-N based materials in the form of nanowires and nanowires-based devices on metal substrates. The nanowires on all-metal scheme greatly simplifies the fabrication process of nanowires based high power light emitters.

Abstract: A planarization process is disclosed. The method includes forming a trench in an area of a material layer which has a relatively high loading condition for sputtering. The method further includes sputtering the material layer to make the material layer flat.

Abstract: A wireless communications method, user equipment, and a network node are disclosed. The method includes: receiving, by user equipment, a message sent by a first network node, where the message includes measurement instruction information and connection indication information; measuring, by the user equipment in the RRC-IDLE mode, the neighboring cells according to the measurement instruction information, and obtaining measurement results; and selecting, by the user equipment, at least one to-be-connected cell from the neighboring cells according to the connection indication information and the measurement results, and keeping camping on the cell of the first network node when the user equipment is in the RRC-IDLE mode. Embodiments of the present invention can advance a time at which a new cell is found.

Abstract: A GaN-based power electronic device and a method for manufacturing the same is provided. The GaN-based power electronic device comprising a substrate and an epitaxial layer over the substrate. The epitaxial layer comprises a GaN-based heterostructure layer, a superlattice structure layer and a P-type cap layer. The superlattice structure layer is provided over the heterostructure layer, and the P-type cap layer is provided over the superlattice structure layer. By using this electronic device, gate voltage swing and safe gate voltage range of the GaN-based power electronic device manufactured on the basis of the P-type cap layer technique may be further extended, and dynamic characteristics of the device may be improved. Therefore, application process for the GaN-based power electronic device that is based on the P-type cap layer technique will be promoted.

Abstract: The present invention relates to a semiconductor device and a method of manufacturing the same. There is provided a semiconductor device comprising: a semiconductor substrate with a fin; a gate intersecting with the fin and a source region and a drain region within the fin at both sides of the gate; metal silicides formed at the source region and the drain region and in contact with the source region and the drain region respectively; wherein there is a impurity dopant at a interface of the metal silicide in contact with the source/drain region, which is capable of reducing a Schottky barrier height between the metal silicide and the source/drain region. The provided semiconductor device can reduce the Schottky barrier height between the metal silicide and the source/drain region, thereby reducing the specific resistance of the contact.

Abstract: A data transmission control method, apparatus and system are provided. A radio communication node receives a data packet sent by a base station, where the data packet is generated by using a Packet Data Convergence Protocol protocol data unit (PDCP PDU) of the base station. The radio communication node acquires the PDCP PDU, which is used as a Radio Link Control service data unit (RLC SDU), in the data packet. The radio communication node sends data generated by using the RLC SDU to a user equipment, where a user plane connection is established between the radio communication node and the user equipment, and a control plane connection is established between the base station and the user equipment.

Abstract: An electrical connector (100) includes: an insulative housing having a base (11) and a pair of side walls (12), each side wall having a resilient inner arm (121) and a stationary outer arm (122); and plural contacts (2) retained to the insulative housing, wherein the resilient inner arm extends along a horizontal, front-to-back direction and has a front end operable in both a vertical, top-to-bottom direction and the horizontal, front-to-back direction to move toward the stationary outer arm.

Abstract: A method for preparing a TiAl alloy thin film, wherein a reaction chamber is provided, in which at least one substrate is placed; an aluminum precursor and a titanium precursor are introduced into the reaction chamber, wherein the aluminum precursor has a molecular structure of a structural formula (I); and the aluminum precursor and the titanium precursor are brought into contact with the substrate so that a titanium-aluminum alloy thin film is formed on the surface of the substrate by vapor deposition. The method solves the problem of poor step coverage ability and the problem of incomplete filling with regard to the small-size devices by the conventional methods. Meanwhile, the formation of titanium-aluminum alloy thin films with the aid of plasma is avoided so that the substrate is not damaged by plasma.

Abstract: A data transmission control method, apparatus and system are provided. A radio communication node receives a data packet sent by a base station, where the data packet is generated by using a Packet Data Convergence Protocol protocol data unit PDCP PDU of the base station. The radio communication node acquires the PDCP PDU, which is used as a Radio Link Control service data unit RLC SDU, in the data packet. The radio communication node sends data generated by using the RLC SDU to a user equipment, where a user plane connection is established between the radio communication node and the user equipment, and a control plane connection is established between the base station and the user equipment.

Abstract: Embodiments provide a D2D communication method, a terminal, and a network device. The method includes: acquiring, by a first terminal, network information, where the network information includes a system message sent by a network device and/or a cell coverage result; determining, by the first terminal according to the network information, whether to enable D2D communication for autonomously discovering a second terminal; and if the first terminal determines to enable the D2D communication, discovering, by the first terminal, the second terminal autonomously, and performing the D2D communication with the second terminal directly.