Abstract: A phase-locked loop circuit comprises a clock signal loss detection module, a time-to-digital converter, a digital-to-time converter, a phase discriminator, a charge pump, a loop filter, a comparator, a voltage-controlled oscillator, a frequency divider, a reference voltage generation module and a switch; a capacitor array of the voltage-controlled oscillator is adjusted by using an output of the comparator, so that a control voltage Vctrl of the voltage-controlled oscillator is constantly equal to a reference voltage after a phase-locked loop is locked and does not change along with a change of a PVT condition; after a reference clock signal is lost, the circuit directly adopts the reference voltage as the control voltage of the voltage-controlled oscillator, and after the reference clock signal is re-accessed, an output delay of the digital-to-time converter is adjusted, clock edge alignment of a new reference clock signal and a feedback clock signal is realized.

Abstract: The present application falls within the technical field of additives for metalworking fluids and specifically relates to a phenolamine additive, a preparation method, and use thereof. The phenolamine additive comprises a compound of Formula (1), a compound of Formula (2), a compound of Formula (3), a compound of Formula (4), and a compound of Formula (5), which has the characteristics of good antimicrobial performance and high stability, and does not produce any sedimentation and precipitation when compounded into a metalworking fluid.

Abstract: A memory cell, an array read-write method, a control chip, a memory, and an electronic device. The memory cell comprises: a first transistor (TR_R) and a second transistor (TR_W); the first transistor comprises a first electrode, a second electrode, a third electrode, and a fourth electrode; the third electrode is a first gate, and the fourth electrode is a second gate; the second transistor comprises a fifth electrode, a sixth electrode, and a seventh electrode; the seventh electrode is a third gate; the first electrode is connected to a read bit line, the second electrode is connected to a reference signal, the first gate is connected to a read word line, the second gate is connected to the fifth electrode; the sixth electrode is connected to a write bit line, the third gate is connected to a write word line.

Abstract: The semiconductor device includes: a substrate; a plurality of memory cell columns, wherein each memory cell column includes a plurality of memory cells, arranged and stacked on one side of the substrate in a first direction, and the plurality of memory cell columns are arranged on the substrate in a second direction and in a third direction to form an array; the memory cells each include a transistor and a capacitor, the transistor including a semiconductor layer and a gate, and semiconductor layer includes a source region, an inversion channel region and a drain region; a plurality of bit lines, extending in the first direction, wherein the source regions of the transistors of the plurality of memory cells in two adjacent memory cell columns in the second direction, are all connected to one bit line; and a plurality of word lines, extending in the third direction.

Abstract: Disclosed is a memory, a method for manufacturing the memory. The memory includes: one or more layers of memory cell arrays stacked in a direction perpendicular to a substrate; a plurality of wordlines that penetrate through one or more layers of the memory cell arrays; and a plurality of bitlines, wherein each memory cell includes a semiconductor layer that surrounds a sidewall of the wordline and extends along the sidewall and each bitline is connected to the semiconductor layers of a column of memory cells in one layer of the memory cell array, wherein the bitline is composed of different branch lines, and the semiconductor layer of each memory cell is connected to two adjacent first branch lines but is not connected to at least a part of the region of the second branch line between the two adjacent first branch lines.

Abstract: The present invention describes a water based semi-synthetic metal working fluid comprising a base oil, an organic acid, emulsifiers, optionally a concentrate additive, water and a microbial growth control agent which comprises a glycol ether amine.

Abstract: A microbial growth control agent and method of controlling microbial growth in metal working fluids, wherein the agent comprises at least a glycol ether amine.

Abstract: A semiconductor memory device and a manufacturing method thereof, a reading/writing method, an electronic device and a memory circuit are provided. A transistor is provided in each memory cell in the semiconductor memory device. A gate electrode and an auxiliary electrode are provided in the transistor, and the auxiliary electrode is electrically connected to a drain electrode. During a writing operation, a first voltage is applied to the gate electrode through a word line, and an electrical signal is applied to a source electrode through a bit line according to the external input data.

Abstract: Methods and systems for scrubbing and removing hydrogen sulfide from a biogas. The methods and systems use a hydrogen sulfide removal media comprising biomass derived biochar, activated carbon, silica gel, and metal organic framework inside a tube through which the biogas passes to scrub the hydrogen sulfide from the biogas. The methods and systems are capable of achieving are about 95% reduction of hydrogen sulfide present in the biogas.

Abstract: A vehicle control device, a vehicle control system and a vehicle are provided in the embodiments of the present disclosure, the vehicle control device includes a first resistor circuit, a comparator, a control switch, and a second resistor circuit; the comparator is configured to receive a first voltage from the air bag module and output a high level signal to the control switch to enable the control switch to be switched on according to the high level signal, enable a battery management system to be grounded after the control switch is switched on, and enable the battery management system to be powered off after the battery management system is grounded, where the first voltage is sent out by the air bag module when a vehicle collision event is detected.

Abstract: A low-carbon and low alloy hot-work die steel with a high toughness at low temperatures and a high strength at high temperatures and a high hardenability, comprises the following components: C: 0.15-0.35%, Si: 0.40-0.90%, Mn: ?0.80%, Cr: 1.50-2.40%, Ni: 2.50-4.50%, Mo: 1.00-1.60%, V: 0.10-0.40%, W: 0.20-0.90%, P: ?0.02%, S?0.02%, and a balance of Fe matrix and other inevitable impurities. The above percentages are mass percentages. The material of the present invention can have a V notch impact energy of 30 J or more than 30 J at ?40° C., a high temperature strength of 380 MPa or more at 700° C., and a hardenability of 200 mm or more to ensure the consistency of internal and external microstructures. The materials of the present invention can be applied to hot-work molds used in special working conditions that require high toughness at low temperatures, high strength at high temperatures and high hardenability.

Abstract: A memory comprises a substrate, and word lines, bit lines and memory cells located on one side of the substrate. Each of the memory cells comprises a transistor comprising: a semiconductor layer comprising a source contact region, a channel region and a drain contact region connected sequentially; a primary gate electrically connected to one of the word lines; a source electrically connected to one of the bit lines and the source contact region of the semiconductor layer, respectively; a drain electrically connected to the drain contact region of the semiconductor layer; and a secondary gate electrically connected to the drain, wherein an orthographic projection of the primary gate on the substrate and an orthographic projection of the secondary gate on the substrate are at least partially overlapped with an orthographic projection of the channel region of the semiconductor layer on the substrate, respectively.

Abstract: This application relates to clock synchronization methods optical head ends, and optical terminals. In an example method, the optical head end receives a first packet from a controller. The first packet includes service data to be transmitted to a plurality of slave stations. The optical head end generates a second packet based on the first packet. The second packet includes the service data and time information. The time information indicates an execution time point at which the plurality of slave stations perform an operation based on the service data. The optical head end further sends the second packet to the plurality of optical terminals to request the plurality of optical terminals to control the plurality of slave stations to perform the operation at the execution time point based on the service data.

Abstract: A microbial growth control agent and method of controlling microbial growth in metal working fluids, wherein the agent comprises at least a glycol ether amine.

Abstract: A semiconductor memory device and a manufacturing method thereof, a reading/writing method, an electronic device and a memory circuit are provided. A transistor is provided in each memory cell in the semiconductor memory device. A gate electrode and an auxiliary electrode are provided in the transistor, and the auxiliary electrode is electrically connected to a drain electrode. During a writing operation, a first voltage is applied to the gate electrode through a word line, and an electrical signal is applied to a source electrode through a bit line according to the external input data.

Abstract: A memory comprises a substrate, and word lines, bit lines and memory cells located on one side of the substrate. Each of the memory cells comprises a transistor comprising: a semiconductor layer comprising a source contact region, a channel region and a drain contact region connected sequentially; a primary gate electrically connected to one of the word lines; a source electrically connected to one of the bit lines and the source contact region of the semiconductor layer, respectively; a drain electrically connected to the drain contact region of the semiconductor layer; and a secondary gate electrically connected to the drain, wherein an orthographic projection of the primary gate on the substrate and an orthographic projection of the secondary gate on the substrate are at least partially overlapped with an orthographic projection of the channel region of the semiconductor layer on the substrate, respectively.

Abstract: The present invention describes a water based semi-synthetic metal working fluid comprising a base oil, an organic acid, emulsifiers, optionally a concentrate additive, water and a microbial growth control agent which comprises a glycol ether amine.

Abstract: A fingerprint detection method for a pharmaceutical preparation. The detection method uses an HPLC-DAD wavelength switching method to simultaneously determine a plurality of active ingredients such as mulberroside A, hydroxysafflor yellow pigment A, paeoniflorin, ferulic acid, calycosin-7-O-?-D-glucoside, rosmarinic acid, salvianolic acid B, formononetin, etc. in the pharmaceutical preparation. The sensitivity and accuracy of the detection method are greatly enhanced so as to ensure the comprehensive evaluation of the quality of the pharmaceutical preparation.

Abstract: ?1-2-fucosyltransferases, and methods and compositions for making and using ?1-2-fucosyltransferases, are described herein.

Abstract: Embodiments of the present disclosure describe a white light illumination system using InGaN-based orange nanowires (NWs) LED, in conjunction with a blue LD for high speed optical wireless communications. By changing the relative intensities of an ultrabroad linewidth orange LED and narrow-linewidth blue LD components, a hybrid LED/LD device achieves correlated color temperature (CCT) ranging from 3000 K to above 6000 K with color rendering index (CRI) values reaching 83.1. Orange-emitting NWs LED are utilized as an active-phosphor, while a blue LD was used for both color mixing and optical wireless communications.