Abstract: A method of forming a semiconductor structure includes; (i) forming an isolation structure in a semiconductor substrate, the isolation structure electrically isolating device regions of the semiconductor substrate; (ii) forming a gate structure extending from one of the device regions to the isolation structure; (iii) forming a resist protective oxide layer overlaying the gate structure and the isolation structure; and (iv) patterning the resist protective oxide layer to form a patterned resist protective oxide that covers at least a portion of the isolation structure and a portion of the gate structure on the isolation structure.

Abstract: The present patent provides a method for improving the construction process of a wide-base radial truck tire, and the improvement of the tire construction process is realized by the design of carcass ply, the tire belt drum and the tire semi-finished components. The patent solves the problem of carcass bending, and provides theoretical guidance and technical support for improving the performance of wide-angle radial tires. The design method of the belt drum of the tire molding machine effectively controls the cords elongation of the belt. In addition, the problem of uneven force in the cords of the belt is eliminated, which dispels the abnormal flow of the wide-base tire shoulder rubber to the center of the crown during the shaping process, thus improving the durability and operability of the tire.

Abstract: Technical solutions are described for step counting, performed by: calibrating (100) a step counting frequency and/or an effective value of step counting pace of a three-axis acceleration sensor according to acquired step counting data of a preset number of steps; and performing (101) step counting according to the calibrated step counting frequency and/or the calibrated effective value of step counting pace of the three-axis acceleration sensor obtained from the calibration. By calibrating the step counting frequency and/or the effective value of step counting pace of the three-axis acceleration sensor, error in the step counting caused by different walking paces of a user and different step counting frequencies of the three-axis acceleration sensors are avoided, improving accuracy of step counting. Also, the calibration improves the accuracy by handling ineffective step counting in the step counting data.

Abstract: A robot control system on a platform which can carry target objects employs a coordinate system including X, Y, and Z axes. A plane including the X and Y axis is parallel with a panel including the platform. After the coordinate system is created, a reminder is displayed and a guiding tool is placed in a position on the platform where the target objects are located, and a fastening tool for use with the guiding tool is arranged on hand of the robot. A location of the fastening tool relative to the guiding tool is adjusted according to a predefined rule. When the location of the fastening tool relative to the guiding tool is correctly adjusted, a position of the end effect of the robot is determined according to the location of the fastening tool and the relevant coordinates are stored as data.

Abstract: A semiconductor device is provided. The semiconductor device comprises a substrate, a gate, a first doped region and a second doped region. The gate is over the substrate. The first doped region and the second doped region are in the substrate. The first doped region and the second doped region are of a same conductivity type and separated by the gate. The length of the first doped region is greater than a length of the second doped region in a direction substantially perpendicular to a channel length defined between the first doped region and the second doped region.

Abstract: A heart rate detection method for calculating heart rate using heart sound from auscultation positions identified by a statistical approach utilizes a down-sampling and filtering process to acquire samples of heart sound from multiple auscultation positions of multiple testees and calculate heart rate with the samples, records time for calculating heart rate from each auscultation position of each testee and record the same from electrocardiogram, calculates a mean error and a standard deviation of the time to identify the auscultation positions allowing faster speed in heart rate detection, and applies a Bland-Altman difference plot and both a coefficient of determination and a Pearson's correlation coefficient to determine the degree of consistency and correlation of the heart rate measured from the multiple auscultation positions to identify the auscultation positions allowing generation of precise heart rate.

Abstract: An information pushing method reduces the interference to the user and improves the utilization rate of information resources during the process of the information pushing. For example, the server sends the triggering condition in the form of triggering condition information, and the identification information corresponding to the information to be pushed to the client terminal. The client terminal determines whether to push the information to be pushed to the user based on the terminal information on its own and sends the identification information to the server. Then the server sends the information to be pushed to the client terminal according to the identification information so that the client terminal may push the information to be pushed to the user.

Abstract: A method for semiconductor manufacturing is disclosed. The method includes receiving a device having a first surface through which a first metal or an oxide of the first metal is exposed. The method further includes depositing a dielectric film having Si, N, C, and O over the first surface such that the dielectric film has a higher concentration of N and C in a first portion of the dielectric film near the first surface than in a second portion of the dielectric film further away from the first surface than the first portion. The method further includes forming a conductive feature over the dielectric film. The dielectric film electrically insulates the conductive feature from the first metal or the oxide of the first metal.

Abstract: A semiconductor structure is disclosed. The semiconductor structure includes: a substrate of a first conductivity; a first region of the first conductivity formed in the substrate; a second region of the first conductivity formed in the first region, wherein the second region has a higher doping density than the first region; a source region of a second conductivity formed in the second region; a drain region of the second conductivity formed in the substrate; a pickup region of the first conductivity formed in the second region and adjacent to the source region; and a resist protective oxide (RPO) layer formed on a top surface of the second region. An associated fabricating method is also disclosed.

Abstract: A semiconductor device is provided. The semiconductor device comprises a substrate, a gate, a first doped region and a second doped region. The gate is over the substrate. The first doped region and the second doped region are in the substrate. The first doped region and the second doped region are of a same conductivity type and separated by the gate. The length of the first doped region is greater than a length of the second doped region in a direction substantially perpendicular to a channel length defined between the first doped region and the second doped region.

Abstract: A wafer support device includes a susceptor, at least one lift pin, at least one lift pin support base and at least one pad. The susceptor has a bottom surface and a top surface configured to support a wafer. The susceptor has at least one through hole extending between the bottom surface and the top surface. The lift pin is at least partially telescopically received in the through hole of the susceptor. The lift pin support base has at least one coupling feature thereon. The pad is detachably coupled with the coupling feature and supports the lift pin.

Abstract: An efficient electrolysis system for sodium chlorate production may include round or oval cells, reactors, a product pump transfer, a buffer tank, a circulation pump, and explosive clad plate, all of which are connected by way of pipelines. Inlet and the outlet of each cell are separately connected with the reactor via titanium pipes, allowing the electrolyte to recirculate naturally between the cells and the reactors. The outlet of every cell is conical while each reactor includes a standard electrolytic unit with three to eight cells. The electrolytic units are modularly identical and symmetrically linked to the buffer tank. Within each unit, adjacent cells are connected with the explosive clad plates. The buffer tank may be divided into two parts—part A and part B—with part A connecting with the overflow port of the reactor via pipeline, and the part B connecting with the reactor via the circulation pump.

Abstract: A semiconductor structure is disclosed. The semiconductor structure includes: a substrate of a first conductivity; a first region of the first conductivity formed in the substrate; a second region of the first conductivity formed in the first region, wherein the second region has a higher doping density than the first region; a source region of a second conductivity formed in the second region; a drain region of the second conductivity formed in the substrate; a pickup region of the first conductivity formed in the second region and adjacent to the source region; and a resist protective oxide (RPO) layer formed on a top surface of the second region. An associated fabricating method is also disclosed.

Abstract: Generally discussed herein are systems, apparatuses, and methods for organizing and/or searching news events. In one or more embodiments, a method can include encoding a news event based on named entities, actors, and actions mentioned in the news event, calculating a locality sensitive hash (LSH) key on the news event encoding, comparing the calculated LSH key to a plurality of LSH keys of respective stories, wherein each story of the respective stories comprises one or more associated news events that include LSH keys that are within a specified distance from each other, and associating the news event with a story of the respective stories that includes an LSH key that has a smallest distance from the LSH key of the received news event and is less than the specified distance.

Abstract: A system for the integral chlorine dioxide production with relatively independent sodium chlorate electrolytic production and chlorine dioxide production is provided. The system may feed electrolyte solution into a solid-liquid filter, filtering out the crystal and eliminating sodium chloride and sodium dichromate. The sodium chlorate crystal may be fed into a chlorine dioxide generator after dissolving, while sodium chloride and sodium dichromate solution separately return to electrolyzer for electrolysis process. Sodium chloride may be constantly formed as a by-product in the chlorine dioxide production unit, and solution containing the sodium chloride is withdrawn from the generator and, after filtration, washing and dissolution, recycled back to sodium chlorate production unit. This way, there is no need of sodium chloride make-up.

Abstract: The invention provides a sulfur doping method for graphene, which comprises the steps of: 1) providing graphene and placing the grapheme in a chemical vapor deposition reaction chamber; 2) employing an inert gas to perform ventilation and exhaust treatment in the reaction chamber; 3) introducing a sulfur source gas to perform sulfur doping on the graphene at 500-1050° C.; and 4) cooling the reaction chamber in a hydrogen and inert gas atmosphere. The present invention can perform sulfur doping on the graphene simply and efficiently, the economic cost is low, and large-scale production can be realized. Large area sulfur doping on graphene can be realized, and doping of graphene on an insulating substrate or metal substrate can be carried out directly.

Abstract: A method of forming a semiconductor structure includes; (i) forming an isolation structure in a semiconductor substrate, the isolation structure electrically isolating device regions of the semiconductor substrate; (ii) forming a gate structure extending from one of the device regions to the isolation structure; (iii) forming a resist protective oxide layer overlaying the gate structure and the isolation structure; and (iv) patterning the resist protective oxide layer to form a patterned resist protective oxide that covers at least a portion of the isolation structure and a portion of the gate structure on the isolation structure.

Abstract: A semiconductor structure is disclosed. The semiconductor structure includes: a substrate of a first conductivity; a first region of the first conductivity formed in the substrate; a second region of the first conductivity formed in the first region, wherein the second region has a higher doping density than the first region; a source region of a second conductivity formed in the second region; a drain region of the second conductivity formed in the substrate; a pickup region of the first conductivity formed in the second region and adjacent to the source region; and a resist protective oxide (RPO) layer formed on a top surface of the second region. An associated fabricating method is also disclosed.

Abstract: A cross-cut tester includes a handle with a receiving cavity, and a plurality of blades received in the receiving cavity. One end of the handle defines an opening. The cross-cut tester further includes a plurality of gaskets received in the receiving cavity. The gaskets and the blades are positioned one-by-one, and are detachably fixed in the receiving cavity. The cross-cut tester of the present disclosure can effectively improve the efficiency of drawing lines and reduce the cost.